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  • 1
    Electronic Resource
    Electronic Resource
    Modeling of agglomeration in polycrystalline thin films: Application to TiSi2 on a silicon substrate (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 720-724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An equilibrium model for agglomeration in polycrystalline thin films which considers the energy balance between the grain boundary energy and both surface and substrate interface energies is presented. It predicts that small grain size, low grain boundary energy, and high film surface and interface energies should promote resistance to agglomeration, and shows that the substrate-film interface can play a significant role in the process. It also predicts a critical grain size limiting formation of a discontinuous island structure. This easily calculable value is significantly smaller than that found in previous modeling. The critical grain size, the importance of the substrate interface, and some of the assumptions are shown to be consistent with transmission microscope observations of TiSi2 thin films deposited on Si substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351333
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  • 2
    Electronic Resource
    Electronic Resource
    Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5828-5833 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture. MTJ elements have been developed which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2, and with MR values enhanced by moderate thermal treatments. Large MR values are observed in magnetic elements with areas as small as 0.17 (μm)2. The magnetic field dependent current–voltage characteristics of an MTJ element integrated with a silicon diode are analyzed to extract the MR properties of the MTJ element itself. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369932
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  • 3
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance at low fields in [(NixFe1−x)yAg1−y]/Ag multilayers prepared by molecular-beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3688-3694 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and magnetic properties of [111]-oriented multilayers comprising ferromagnetic films of Permalloy-silver alternating with Ag spacer films are described. The multilayers are grown by molecular-beam epitaxy on Pt(111) seed films on sapphire (0001) substrates at temperatures in the range 25–175 °C. For a series of multilayers with similar bilayer periods ((approximately-equal-to)50 A(ring)) the magnetoresistance (MR) is found to be strongly dependent on both growth temperature and subsequent annealing temperature. The multilayers exhibit a negative magnetoresistance in the as-grown state which more than doubles when the growth temperature is increased from 25 to 100 °C; however, the highest MR (peak 5.6%; maximum slope 0.4% per Oe) is obtained by annealing (at 400 °C) multilayers grown at 100 °C. The primary effects of annealing are an improvement of structural order, partial segregation of Ag from the ferromagnetic films into adjacent Ag films, a slight decrease in laminar order, and a reduction in long-wavelength roughness of the multilayer interfaces. No evidence is found for discontinuities in the magnetic layers with the highest MR.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357437
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  • 4
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance at low fields in [(NixFe1−x)yAg1−y]/Ag multilayers prepared by molecular beam epitaxy (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6618-6618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural changes that accompany the development of GMR (giant magnetoresistance) at low ((approximately-less-than)10 Oe) fields in annealed magnetic multilayers are of current interest because of potential applications of such structures in sensors. In this paper we report a study of the development of GMR in [111]-oriented multilayers comprising ferromagnetic films of a mixture of Ag and permalloy (NixFe1−x, x∼0.8) alternating with Ag spacer films. The multilayers were grown by molecular beam epitaxy (MBE) on Pt(111) seed films on sapphire (0001) substrates at temperatures in the range 20 to 200 °C. The structure of the multilayers was investigated using x-ray diffraction and electron microscopy. For a series of multilayers grown with nominally identical ferromagnetic and spacer layer thicknesses, the magnetoresistance is found to be strongly dependent on both growth temperature and subsequent annealing temperature. The multilayers exhibited a negative magnetoresistance in the as-grown state which more than doubled when the growth temperature was increased from 20 to 100 °C. However, the highest magnetoresistance (peak 5.6%; maximum slope 0.4% per Oe) was obtained by annealing (at 400 °C) multilayers grown at 100 °C. Transmission electron microscopy studies of such multilayers showed no evidence for discontinuities or penetration of the ferromagnetic films by Ag along grain boundaries. Thus, we conclude that discontinuous or granular multilayers with complete phase separation are not necessary for GMR with low saturation fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358181
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  • 5
    Electronic Resource
    Electronic Resource
    Crystallography and microstructure of Tl-Ca-Ba-Cu-O superconducting oxides (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 432-434 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the crystallography and microstructure of six oxides in the Tl-Ca-Ba-Cu-O system with nominal compositions Tl1Ba2Cu1O5, Tl1Ca1Ba2Cu2O7, Tl1Ca2Ba2Cu3O9, Tl2Ba2Cu1O6, Tl2Ca1Ba2Cu2O8, and Tl2Ca2Ba2Cu3O10. The structures consist of one, two, or three Cu perovskite-like units sandwiched between Tl-O monolayers or bilayers. The predominant defects in the crystals with bilayer and trilayer Cu perovskite-like units are stacking faults that produce local intergrowths of related structures. The density of stacking defects in these oxides correlates with changes in the superconducting transition temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100611
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  • 6
    Electronic Resource
    Electronic Resource
    Annealing treatment effects on structure and superconductivity in Y1Ba2Cu3O9−x (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 614-616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effects of heat treatment and ambient on the structure and superconducting properties of Y1Ba2Cu3O9−x. The structure undergoes an orthorhombic-to-tetragonal transition on heating at about 700 °C, caused by oxygen loss and disordering of oxygen vacancies on the copper plane between the barium layers. Heat treatments that promote maximum ordering of the oxygen vacancies result in superior superconducting properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98364
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  • 7
    Electronic Resource
    Electronic Resource
    Enhanced magneto-optical Kerr effect in oxidized Co thin films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5621-5625 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the structural and magneto-optical properties of postdeposition oxidized Co thin films. The oxidization process leads to the formation of a double-layered structure of fcc Co3O4 on top of metallic Co. The magneto-optical Kerr effect (MOKE), measured in the range 0.8 eV≤EPh≤5.5 eV reveals characteristic dependencies of the MOKE spectra on annealing temperature and time. In particular, we observe resonance-type enhancements of the Kerr effects by up to a factor of 10 compared with unannealed metallic Co. The experimental data are quantitatively reproduced by bilayer optical stack calculations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367413
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  • 8
    Electronic Resource
    Electronic Resource
    Phase stability limits of Bi2Sr2Ca1Cu2O8+δ and Bi2Sr2Ca2Cu3O10+δ (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1977-1979 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We determined the phase stability limits of Bi2Sr2Ca1Cu2O8+δ and Bi2Sr2Ca2Cu3O10+δ in the temperature range 650–880 °C using a solid-state electrochemical technique. These phases decompose by incongruent melting above ∼790 °C, whereas they decompose by a solid-state reaction at lower temperatures. The solid-state decomposition reaction is reversible for Bi2Sr2Ca1Cu2O8+δ, but not for Bi2Sr2Ca2Cu3O10+δ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108335
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of oxygen pressure on Tl2Ca2Ba2Cu3O10±δ formation (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2150-2152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the formation of Tl2Ca2Ba2Cu3O10±δ as a function of oxygen pressure and temperature. Our results explain some previous difficulties in forming single-phase Tl2Ca2Ba2Cu3O10±δ and suggest new routes for making bulk and thin-film Tl-Ca-Ba-Cu-O superconductors. In particular, we find that the temperature needed to form Tl2Ca2Ba2Cu3O10±δ can be greatly reduced by using low oxygen pressures during synthesis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107066
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  • 10
    Electronic Resource
    Electronic Resource
    Structures and dielectric properties of thin polyimide films with nano-foam morphology (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1930-1932 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin polyimide films with dispersed nano-foam morphology have been prepared for the purpose of obtaining low dielectric polymer insulators for microelectronic applications. They were obtained by utilizing micro phase-separated triblock copolymers where the thermally stable polyimide matrix component was derived from pyromellitic dianhydride (PMDA) with 1,1-bis(4-aminophenyl)-1-phenyl-2,2,2-trifluoroethane (3F) and a thermally labile poly(propylene oxide)(PO) component comprised the outside block of the ABA triblock architecture. TEM studies show that the initial irregular nanoscale phase-separated morphology of polyimide triblock copolymers are mostly maintained in the final nano-foam films upon thermal decomposition of the dispersed PO component. The nano-foam polyimide films exhibit significantly lower dielectric constants ε′ (e.g., 2.3 at 19% porosity) as compared with ε′≈2.9 for the homopolymer, as predicted by Maxwell–Garnett theory, with the nano-pore structures remaining stable at 350 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115629
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