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1

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Fast diffusers Cu and Ni as the origin of electrical activity in a silicon grain boundary (1989)

Maurice, J.-L. ; Colliex, C.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 241-243

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Grain boundary (GB) electrical activity is increased by heat treatment in silicon; the origin of the phenomenon is a subject of controversy and is often attributed to oxide precipitation. This letter presents microanalytical results (conventional and scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and electron energy loss spectroscopy), obtained on a Σ=25 bicrystal before and after annealing in sealed ampoules at 900 °C. The enhancement of the electrical activity, confirmed by electron beam induced current and deep level transient spectroscopy, is shown to appear at the boundary simultaneously with precipitates containing copper and nickel. The major role of the fast diffusing 3d metals on the GB electrical properties is demonstrated.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101919

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2

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Effects of copper and oxygen precipitation during thermal oxidation of silicon: An electron-beam-induced current study (1995)

Correia, A. ; Ballutaud, D. ; Boutry-Forveille, A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 6543-6553

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The effects on minority carrier diffusion length Ln of the oxidation of p-type silicon in a copper-contaminated ambient have been analyzed using an electron-beam-induced current. The experiments were carried out on Czochralski (Cz) and float-zone silicon, and on samples with damaged and undamaged surfaces, in order to evaluate the role of oxygen supersaturation in the starting material, and the influence of the formation of oxidation-induced stacking faults on oxygen and copper precipitates during the oxidation anneal. The microstructure of the interface silicon underlayers was controlled using transmission electron microscopy and secondary ion mass spectrometry. The diffusion length Ln was drastically decreased in regions free of copper colonies, showing that a noticeable concentration of copper existed in the form of pointlike recombinant defects in the bulk. This effect was more pronounced in Cz silicon, where it was assigned to the presence of oxygen-based clusters acting as copper traps, and in the cases of damaged surfaces, where it indicated that the growth of the copper-related pointlike defects occurred with the emission of silicon self-interstitials. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360475

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3

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Two-dimensional defects in InSe (1987)

Houdy, Ph. ; Maurice, J. L. ; Besson, J. M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 61 (1987), S. 5267-5271

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Two-dimensional precipitates associated with stacking faults in layer semiconductors have previously been put forward to explain transport properties of these crystals, especially their remarkable electrical anisotropy. High-field cyclotron resonance behavior, among others, can be accounted for by two-dimensional accumulation layers in the vicinity of these defects. Direct evidence for the existence of these defects has been obtained by electron microscopy and x-ray microprobe analysis in indium selenide. Planar faults act like sinks for impurity atoms. This accounts for the unique behavior of layer compounds which exhibit intrinsic behavior (low apparent carrier concentration—high mobilities) even with high (100 ppm) initial doping levels. Optical, transport, and magnetotransport properties at low temperature can be explained along this model. As regards the applications of indium selenide to the photovoltaic conversion of solar energy, the existence of these defects explains most features of this semiconductor in this respect: (i) Its comparatively low effective diffusion length parallel to the c axis. (ii) p- to n-type switching under thermal annealing which allows fabrication of p-n junctions. (iii) Low apparent carrier density which precludes abrupt profiles for p-n structures.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.338261

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4

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Evidence for a self-organized growth in granular Co/Al2O3 multilayers (2000)

Babonneau, D. ; Petroff, F. ; Maurice, J.-L. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 2892-2894

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: By sequential deposition of thin layers of cobalt and alumina by sputtering, we have fabricated granular multilayers consisting of successive planes of nanosized cobalt clusters separated by alumina along the growth direction. Combining grazing-incidence small-angle x-ray scattering and transmission electron microscopy experiments, we show that, in a given range of thickness, the vertical arrangement of clusters from plane to plane is not random but shows a topology-induced self-organization. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.126508

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5

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Large magnetoresistance in tunnel junctions with an iron oxide electrode (1999)

Seneor, P. ; Fert, A. ; Maurice, J.-L. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 74 (1999), S. 4017-4019

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report on the fabrication and properties of (cobalt/alumina/iron oxide) tunnel junctions. We observe magnetoresistance (MR) effects reaching 43% at 4.2 K and 13% at room temperature. This large MR is ascribed to the presence of a Fe3−xO4 (close to half-metallic magnetite) phase identified by electron diffraction. At low temperature, the MR drops sharply when the bias voltage is smaller than 10 mV, which suggests that the magnetoresistance originates from the activation of tunneling channels through spin polarized states below and above the Fermi level in the iron oxide. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.123246

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6

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Electron beam irradiation of n-type porous silicon obtained by photoelectrochemical etching (1995)

Maurice, J.-L. ; Rivière, A. ; Alapini, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 1665-1667

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The effects of electron beam irradiation on luminescence and microstructure of n-type porous silicon (PS) have been investigated, using cathodoluminescence (CL) in the scanning electron microscope (SEM), and electron energy loss spectroscopy in the transmission electron microscope (TEM). In the SEM, the CL rapidly decreased with irradiation. It could be fully restored by boiling the samples in de-ionized water. In the TEM, freshly restored PS emerged as Si nano-crystallites embedded in an unstable silicon oxide. The effect of irradiation was to suppress the oxide, and also, in the case of proximity of carbon from the foil holding the sample, to change the crystallite composition to β-SiC. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113886

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7

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EELS study of interfaces in magnetoresistive LSMO/STO/LSMO tunnel junctions (2003)

Samet, L. ; Imhoff, D. ; Maurice, J.-L. ; [et al.]

Springer

The European physical journal 34 (2003), S. 179-192

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ISSN: 1434-6036

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract. A magnetic tunnel junction consists of two ferromagnetic conducting electrodes separated by an insulating thin layer. The performance of such a system strikingly depends on the last conducting atomic layers in contact with the insulator. Consequently, the present paper reports a nanoscale electron energy loss spectroscopy (EELS) study, which has been performed across a couple of La0.66Sr0.33MnO3,/SrTiO3/La0.66Sr0.33MnO3 tunnel junctions with different barrier thickness es (1.5 nm and 5 nm respectively). It aims at determining not only the chemical composition in the interface areas, but also the effect of the neighbouring atoms on their electronic structure. Using recent improvements in the STEM-EELS data acquisition and processing techniques (systematic use of spectrum-line and spectrum-image modes, multivariate statistical analysis, 2D energy deconvolution schemes, etc.), the local chemical information is better extracted with shorter acquisition times, while the large increase of the data set contributes to validate the results. Within the accuracy level of these measurements, the elemental composition of the different phases remains stable up to the interfaces with no evidence of extra doping. Furthermore, weak changes on the Mn-2p edge fine structures (weak shift to lower energy loss values and extra splitting on the top of the Mn L3 line are observed on all the interfaces. They are interpreted as a consequence of a slight reduction of the local Mn valence likely accompanied by a strain induced change in local symmetry. The discussion is focussed on all spectral changes identified at a (sub)nanometer scale and their potential effects on the degradation of magnetic and transport properties measured, close to room temperature, at a macroscopic level.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1140/epjb/e2003-00210-8

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8

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Structure of cobalt cluster films obtained by sputter deposition on alumina (1999)

Briático, J. ; Maurice, J.-L. ; Carrey, J. ; [et al.]

Springer

The European physical journal 9 (1999), S. 517-521

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ISSN: 1434-6079

Keywords: PACS: 61.46.+w Clusters, nanoparticles, and nanocrystalline materials – 61.10.Ht X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract. We report on the structure of cobalt cluster films obtained by aggregation of metal atoms sputter-deposited on amorphous alumina. The cluster layers were encapsulated with a second amorphous alumina layer, also made by sputtering in the same chamber. Electron energy loss spectroscopy (EELS) indicates that encapsulation with sputtered alumina keeps the clusters free from cobalt oxide. Transmission electron microscopy (TEM) exhibits relatively narrow distributions of the cluster sizes and of the inter-cluster distances, which results in a noticeable local order. Size distributions appear quasi-Gaussian, but TEM misses an important number of small particles. Extended X-ray absorption fine structure (EXAFS) data shows that the actual average sizes are smaller, and Monte Carlo simulations suggest that the actual distributions could be bimodal, with a secondary peak in the small-size range.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/s100530050491

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