Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 4017-4019
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the fabrication and properties of (cobalt/alumina/iron oxide) tunnel junctions. We observe magnetoresistance (MR) effects reaching 43% at 4.2 K and 13% at room temperature. This large MR is ascribed to the presence of a Fe3−xO4 (close to half-metallic magnetite) phase identified by electron diffraction. At low temperature, the MR drops sharply when the bias voltage is smaller than 10 mV, which suggests that the magnetoresistance originates from the activation of tunneling channels through spin polarized states below and above the Fermi level in the iron oxide. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123246
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