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Large magnetoresistance in tunnel junctions with an iron oxide electrode (1999)

Seneor, P. ; Fert, A. ; Maurice, J.-L. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 74 (1999), S. 4017-4019

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report on the fabrication and properties of (cobalt/alumina/iron oxide) tunnel junctions. We observe magnetoresistance (MR) effects reaching 43% at 4.2 K and 13% at room temperature. This large MR is ascribed to the presence of a Fe3−xO4 (close to half-metallic magnetite) phase identified by electron diffraction. At low temperature, the MR drops sharply when the bias voltage is smaller than 10 mV, which suggests that the magnetoresistance originates from the activation of tunneling channels through spin polarized states below and above the Fermi level in the iron oxide. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.123246

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