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  • 1
    ISSN: 1432-1890
    Keywords: Key words Eastern Hemlock ; Ectomycorrhiza ; Mycorrhizal ; colonization ; Northern red oak ; Cenococcum geophilum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Thickets of Rhododendron maximum (Ericaceae) (Rm) in the southern Appalachians severely limit regeneration of hardwood and coniferous seedlings. Experimental blocks were established in and out of Rm thickets in a mature, mixed hardwood/conifer forest in Macon County, N.C. Litter and organic layer substrates were removed, composited and redistributed among plots within the blocks (except for control plots). Seedlings of northern red oak (Quercus rubra) and eastern hemlock (Tsuga canadensis) were planted in the plots and harvested at the end of the first and second growing seasons. Litter manipulation had no effect on total mycorrhizal colonization, but the distribution of Cenococcum geophilum mycorrhizae was altered. After the first year, percent mycorrhizal colonization of hemlocks not in Rm thickets (62%) was at least three times higher than in Rm thickets (19%), and the ramification index (no. of mycorrhizae cm–1) had increased by more than a factor of four (2.83 versus 0.61). In addition, colonization of 1-year-old hemlocks by C. geophilum was significantly higher within blocks with (10.4%) than without (4.6%) Rm. Differences in mycorrhizal colonization, ramification indices and colonization by C. geophilum were absent or less pronounced on 2-year-old hemlocks and 1- and 2-year-old oak seedlings. The biomasses of first year oak roots and shoots and second year shoots were 50% less in Rm thickets. Biomasses of first year hemlock roots and second year shoots were also reduced. Mycorrhizal parameters were correlated with some growth parameters only for hemlock seedlings, but did not explain most of the variation observed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 185 (1993), S. 36-49 
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1031-1033 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Improvement on the current-voltage characteristics of polycrystalline silicon contacted n+-p junctions after they were applied a high-field scanned stressing is reported. For the stressed diodes, the leakage current decreased as much as two orders, the breakdown voltage shifted from −45 to −60 V, and the forward ideality factor also decreased. Scanning electron microscopy photographs on the cross-sectional view of the junctions revealed that local melting might have occurred during stressing to cause the improvement.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1378-1385 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we report a high-performance ultrathin oxide (≈80 A(ring)) prepared by a low-temperature wafer loading and N2 preannealing before oxidation. This recipe can reduce native oxide thickness and thermal stress compared to the conventional oxidation recipe. The high-resolution transmission electron microscopy reveals that the SiO2/Si interface is atomically flat, and a thin crystalline-like oxide layer about 7 A(ring) exists at the interface. Oxides prepared by the proposed recipe show a very high dielectric breakdown field (≥16 MV/cm) and a very low interface state density (Nit ≈ 3 × 109 eV−1 cm−2 at midgap). The effective barrier height at cathode derived from the slopes of log(Jg/E2ox) vs 1/Eox and tbd vs 1/Eox plots is about 3.9 eV, instead of 3.2 eV for the control sample. It also shows a better immunity to the charge trapping and interface state generation under high-field stressing, and superior time-dependent dielectric breakdown characteristics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8027-8034 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influences of cladding layer thicknesses on the performance of strained-layer InGaAs/GaAs graded-index separated confinement heterostructure quantum well lasers have been studied. The waveguiding property of the laser structure was analyzed using the transfer matrix method. In this work, experimental results and the calculated results showed that threshold current densities and external quantum efficiencies both were crucially dependent on the thicknesses of cladding layer for both single and multiple quantum well lasers. The minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal total loss for both single and multiple quantum well devices were determined experimentally and theoretically.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4430-4437 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of GaN films grown by electron-cyclotron-resonance-assisted molecular beam epitaxy on Si(111), Si(001), basal-plane sapphire, a-plane sapphire, and r-plane sapphire substrates was studied with four-circle x-ray diffractometry. Phase content, domain size, inhomogeneous strain, and in-plane and out-of-plane domain misorientations were measured and compared for films grown on each type of substrate. Wurtzite and zinc blende polymorphs were found to coexist in films grown on Si(111). The two structures grow in the (0002) and (111) orientations, respectively, so that they may transform into each other via stacking faults on close-packed planes. Smaller amounts of zinc blende material were also found in predominately (0002) wurtzitic films on a-plane sapphire and (112¯0) wurtzitic films on r-plane sapphire.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4933-4943 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN films have been epitaxially grown onto (001) Si by electron cyclotron resonance microwave-plasma-assisted molecular-beam epitaxy, using a two-step growth process, in which a GaN buffer is grown at relatively low temperatures and the rest of the film is grown at higher temperatures. This method of film growth was shown to lead to good single-crystalline β-GaN and to promote lateral growth resulting in smooth surface morphology. The full width at half-maximum of the x-ray rocking curve in the best case was found to be 60 min. Optical-absorption measurements indicate that the band gap of β-GaN is 3.2 eV and the index of the refraction below the absorption edge is 2.5. Conductivity measurements indicate that the films may have a carrier concentration below 1017 cm−3.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 642-645 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tantalum silicide (TaSix ) films with different Si to Ta ratios (x) as Schottky contacts to GaAs have been studied. The films were prepared by coevaporation. The metallurgical properties of the film and the stability of the silicide-GaAs interface were studied by x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The films were annealed at various temperatures (up to 850 °C) for thermal stability evaluation and the Schottky diodes were characterized by I-V and C-V measurements. It was found that the Si to Ta ratio (x) plays an important role in the thermal stability of the Schottky diode. For small x values, there are interactions between Ta and GaAs, probably a compound formation, after high-temperature annealing. For large x values, the degradation mechanism for the Schottky diodes after high-temperature annealing appears to be the out-diffusion of Ga and As from the substrate. The best composition for a thermally stable Schottky barrier is Ta5 Si3, which shows stable Schottky characteristics after annealing with temperatures up to 800 °C.
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  • 9
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of the nitrogen co-implant to suppress the boron penetration in p+-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF+2 combines with the boron to form a B–N complex which results in a retardation of boron diffusion. It is found that metal–oxide–silicon capacitors with nitrogen implantation show improved electrical properties. © 1996 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1853-1855 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A polycrystalline silicon-boron (Si-B) layer with a thickness of 180 nm was grown on recrystallized amorphous silicon in an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system using pure SiH4 and B2H6 (1% in H2). The growth temperature was as low as 550 °C. Auger electron spectroscopy and secondary ion mass spectroscopy showed that the boron concentration is extraordinarily high (2×1022 cm−3). From the analysis of transmission electron diffraction patterns, the phase of silicon hexaboride (SiB6) was found to be present in the as-deposited Si-B layer. After thermal annealing, most of the boron atoms in the Si-B layer were found to be immobile. The presence of SiB6 in the Si-B layer may lead to the reduction of boron diffusivity in the Si-B layer during thermal annealing.
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