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  • 1
    Electronic Resource
    Electronic Resource
    Kinetics of Chlorination of Niobium Oxychloride by Phosgene in a Tube-Flow Reactor. Application of Sequential Experimental Design (1972)
    s.l. : American Chemical Society
    Industrial and engineering chemistry 11 (1972), S. 160-164 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/i260042a002
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of Experimental Error on Parameter Estimation and Convergence of a Sequential Experimental Design (1972)
    s.l. : American Chemical Society
    Industrial and engineering chemistry 11 (1972), S. 164-169 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/i260042a003
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of an AlGaAs/GaAs asymmetric triangular quantum well grown by a digital alloy approximation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4551-4556 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An asymmetric triangular quantum well was grown by molecular-beam epitaxy using a digital alloy composition grading method. A high-resolution electron micrograph (HREM), a computational model, and room-temperature photoluminescence were used to extract the spatial compositional dependence of the quantum well. The HREM micrograph intensity profile was used to determine the shape of the quantum well. A Fourier series method for solving the BenDaniel–Duke Hamiltonian [D. J. BenDaniel and C. B. Duke, Phys. Rev. 152, 683 (1966)] was then used to calculate the bound energy states within the envelope function scheme for the measured well shape. These calculations were compared to the E11h, E11l, and E22l transitions in the room-temperature photoluminescence and provided a self-consistent compositional profile for the quantum well. A comparison of energy levels with a linearly graded well is also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357013
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4933-4943 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN films have been epitaxially grown onto (001) Si by electron cyclotron resonance microwave-plasma-assisted molecular-beam epitaxy, using a two-step growth process, in which a GaN buffer is grown at relatively low temperatures and the rest of the film is grown at higher temperatures. This method of film growth was shown to lead to good single-crystalline β-GaN and to promote lateral growth resulting in smooth surface morphology. The full width at half-maximum of the x-ray rocking curve in the best case was found to be 60 min. Optical-absorption measurements indicate that the band gap of β-GaN is 3.2 eV and the index of the refraction below the absorption edge is 2.5. Conductivity measurements indicate that the films may have a carrier concentration below 1017 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350642
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  • 5
    Electronic Resource
    Electronic Resource
    Cathodoluminescence imaging of defects and impurities in diamond films grown by chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3212-3218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defects and impurities in diamond films grown by chemical vapor deposition (CVD) were analyzed by high-resolution cathodoluminescence (CL) spectroscopy and imaging in transmission electron microscopy (TEM). The combination of CL and TEM makes it possible to correlate the film microstructure with the electronic structure due to defects. Broad CL bands observed at 428±1 nm (2.90±0.01 eV) and 551±1 nm (2.250±0.004 eV) are attributed to closely spaced and widely separated donor-acceptor (D-A) pairs, respectively. A narrow peak at 738.7±0.5 nm (1.679±0.001 eV) is attributed to interstitial silicon atom impurities. An additional wide band at 365±1 nm (3.40±0.01 eV) was not identified. The material was found to be type IIb (semiconducting) and varied in quality with the growth conditions. Impurities are evidently distributed nonuniformly on a submicrometer scale, and both highly faulted and defect-free grains were found to emit no visible CL. For the first time in CVD-grown diamond, band-A CL due to closely spaced D-A pairs was found to be directly correlated with dislocations. Widely spaced D-A pairs were more uniformly distributed throughout the film. The distribution of interstitial silicon impurities varied greatly from grain to grain, but was not correlated with any microstructure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348539
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  • 6
    Electronic Resource
    Electronic Resource
    Microstructural characterization of AlGaAs-GaAs modulation-doped field-effect transistor ohmic contacts formed by transient annealing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4723-4727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient annealing of a sequentially deposited metallization scheme, Au/Ni/Au/Ge/Ni, was used to obtain low resistivity ohmic contacts to GaAs-AlGaAs based modulation-doped field-effect transistors. Cross-sectional transmission electron microscopy and energy dispersive x-ray analysis techniques were employed to determine the type and distribution of various phases formed. Three different phases, namely, Au rich, Ni-Ge, and Ni-As(Ge), were observed. The Ni-As(Ge) phase was found to be in contact with GaAs. The Ni-Ge phase was present in localized regions in the Au-rich phase. Also, the Ni-Ge phase was found to be in direct contact with either Ni-As(Ge) or with GaAs. The Au-rich region manifested itself as a layered structure and was observed above the Ni-As(Ge) phase. As a consequence of the anneal cycle, movement of contact material both parallel and perpendicular to the device surface occurred at the metallization edges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340129
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  • 7
    Electronic Resource
    Electronic Resource
    High-resolution luminescence studies of indium phosphide under ohmic contacts (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1311-1316 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence (CL) has been used to investigate the nature of n-type InP directly underneath AuGeNi ohmic contacts subjected to various heat treatments. The study of this contact system by CL has shown directly that the quality of the underlying InP is significantly modified up to distances of several microns from the contact interface. These changes are brought about by the interaction of the contact components with the semiconductor. Contrary to the widely accepted view, no evidence of n+ doping of the InP by Ge was observed in any of the contacts examined. Possible explanations for the observed reduction in CL efficiency obtained from the InP close to the contact interface are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334531
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  • 8
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy cathodoluminescence investigation of anomalous Sn diffusion in GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 164-167 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn-doped GaAs diffused with Sn has been examined in cross section by transmission electron microscopy (TEM) and high-resolution cathodoluminescence (CL) in an attempt to account for the penetration of Sn into this material but the apparent lack of any electricity activity. TEM shows that small Sn-rich precipitates are present in the GaAs near the surface. CL indicates that some of the Sn dopes of GaAs n-type, but additionally that new emissions in the spectra at ∼1.44 and ∼1.455 eV are seen to originate from the diffused region. A possible explanation for the lack of electrical activity of the Sn is discussed in terms of these results and may lie in the formation of a compensating Sn-related complex or an accumulation of Zn in the diffused region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336855
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  • 9
    Electronic Resource
    Electronic Resource
    Cathodoluminescence from diamond films grown by plasma-enhanced chemical vapor deposition in dilute CO/H2, CF4/H2, and CH4/H2 mixtures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2463-2465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond films grown by rf plasma-enhanced chemical vapor deposition in dilute CO, CF4, and CH4 (diluent H2) mixtures have been examined by cathodoluminescence (CL) in a transmission electron microscope to assess the incorporation of optically active impurities and defects. The details of the CL spectra are found to be dependent on the different gas mixtures and are correlated with the different film microstructures. Dislocation-related band A CL due to closely spaced donor-acceptor (D-A) pairs was observed from both the CO and CH4-grown films, but was absent in the CF4-grown material. Band A CL due to widely separated (D-A) pairs was seen in all samples but was especially dominant in the CF4-grown film. Emission due to a di-Si interstitial impurity was observed in CO- and CF4-grown films but was absent in the CH4-grown material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105996
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 944-946 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc blende and wurtzitic GaN films have been epitaxially grown onto (001)Si by electron 〈m1;&1p〉cyclotron resonance microwave plasma-assisted molecular beam epitaxy, using a two-step growth process. In this process a thin buffer layer is grown at relatively low temperatures followed by a higher temperature growth of the rest of the film. GaN films grown on a single crystalline GaN buffer have the zinc blende structure, while those grown on a polycrystalline or amorphous buffer have the wurtzitic structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106309
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