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  • 1
    Electronic Resource
    Electronic Resource
    Experimental annotation of the human genome using microarray technology (2001)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 409 (2001), S. 922-927 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The most important product of the sequencing of a genome is a complete, accurate catalogue of genes and their products, primarily messenger RNA transcripts and their cognate proteins. Such a catalogue cannot be constructed by computational annotation alone; it requires experimental validation on a ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35057141
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  • 2
    Electronic Resource
    Electronic Resource
    Role of cladding layer thicknesses on strained-layer InGaAs/GaAs single and multiple quantum well lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8027-8034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influences of cladding layer thicknesses on the performance of strained-layer InGaAs/GaAs graded-index separated confinement heterostructure quantum well lasers have been studied. The waveguiding property of the laser structure was analyzed using the transfer matrix method. In this work, experimental results and the calculated results showed that threshold current densities and external quantum efficiencies both were crucially dependent on the thicknesses of cladding layer for both single and multiple quantum well lasers. The minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal total loss for both single and multiple quantum well devices were determined experimentally and theoretically.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353917
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of oxygen on the performance of GaAs/AlGaAs quantum well infrared photodetectors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 274-277 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of oxygen on the performance of GaAs/AlGaAs quantum well infrared photodetectors (QWIP) has been studied. Photoluminescence and secondary ion mass spectroscopy were used to examine the relationship between the quality of AlGaAs and the oxygen content that were then correlated to the performance of QWIPs. It was found that oxygen is the dominant impurity in the GaAs/AlGaAs superlattice. Because oxygen atoms behave likes electron traps, which effectively reduce the carrier concentration in the material, both of the responsivity and the dark current of QWIP are reduced. The detectivities of QWIPs with lower oxygen concentrations are better than those with higher oxygen concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358439
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  • 4
    Electronic Resource
    Electronic Resource
    Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 664-670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional disordering of InGaAs/GaAs superlattices using a low-temperature-grown GaAs cap layer (LT-GaAs) by molecular beam epitaxy has been studied. The disordering of the superlattice was verified by photoluminescence and double-crystal x-ray rocking curve measurements. The Ga-vacancy-enhanced interdiffusion due to the presence of LT-GaAs was found to be the disordering mechanism. Diffusion equations and the Schrödinger's equation were solved numerically to obtain the composition profile and the transition energies in the disordered quantum well, respectively. The simulated energy shifts for samples under different annealing conditions agreed very well with the experimental results. The calculated effective diffusivity for the In–Ga interdiffusion has an activation energy of 1.63 eV, which is smaller than the activation energy 1.93 eV, for intrinsic interdiffusion. The diffusivity for the enhanced In–Ga interdiffusion due to the presence of LT-GaAs is about two orders of magnitude larger than the intrinsic In–Ga diffusivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360810
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of indium doping in InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4882-4885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of indium doping in the graded-index regions of the InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure quantum well laser has been studied. It was found that the threshold current density can be greatly reduced by a proper amount of In doping in the graded AlGaAs region. This result is attributed to an improvement in material quality due to a reduction in group III vacancies. The effect of thermal treatment on laser performance has also been studied. Although high temperature annealing can significantly improve non-In-doped lasers, it has little effect on In-doped lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354319
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  • 6
    Electronic Resource
    Electronic Resource
    Kinetics of compositional disordering of AlGaAs/GaAs quantum wells induced by low-temperature grown GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4302-4306 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional disordering of GaAs/AlGaAs quantum wells due to the presence of low-temperature grown GaAs (by molecular beam epitaxy) was studied. Ga vacancy enhanced interdiffusion was found to be the mechanism underlying the observed intermixing. Diffusion equations were solved numerically to obtain the band profile after intermixing. The transition energies in the quantum wells under various annealing conditions were solved and agree very well with the observed photoluminescence emission peaks. The diffusivity of Ga vacancies and that of induced Al-Ga interdiffusion were obtained. The vacancy induced interdiffusion diffusivity was found to have an activation energy of 4.08 eV, which is smaller than the activation energy of interdiffusion diffusivity of normal temperature grown GaAs/AlGaAs heterostructures. This is a clear indication of enhanced interdiffusion due to the presence of low-temperature grown GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359453
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  • 7
    Electronic Resource
    Electronic Resource
    The study of emitter thickness effect on the heterostructure emitter bipolar transistors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1398-1402 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaAs/GaAs heterostructure emitter bipolar transistors were grown with emitter thicknesses varied from 300 to 900 A(ring) and the emitter thickness effects on the current gain and offset voltage were studied. It was found that both the current gain and offset voltage are strongly dependent on the emitter thickness. The current gain decreases with increasing emitter thickness. For an emitter thickness smaller than 500 A(ring), the offset voltage decreases with increasing emitter thickness, but for an emitter thickness larger than 500 A(ring), the offset voltage stays at a nearly constant value. Offset voltage as low as 55 mV was obtained for an emitter thickness of 700 A(ring). This low offset voltage, mostly contributed by the geometric effect, indicates that the base-emitter junction is a homojunction. From the current gain and offset voltage considerations, the optimal emitter thickness was found to be about 300–500 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354898
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  • 8
    Electronic Resource
    Electronic Resource
    Fundamental mode operation of high-power InGaAs/GaAs/AlGaAs laser arrays (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4706-4708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new ridge waveguide laser array with stable fundamental mode operation has been fabricated. By introducing absorption regions in all the laser stripes except for the central one, the electric field distribution of the laser arrays and the modal gains of the array supermodes are changed, resulting in fundamental mode operation. The threshold current of an array with five elements is typically 40 mA and the maximum output power is higher than 150 mW. The single-lobed far-field pattern centered at 0° with full width at half maximum of 2° is obtained at 1.5 times of the threshold current (Ith).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352741
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  • 9
    Electronic Resource
    Electronic Resource
    Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 366-371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the thermal reaction of Pd/In0.52Al0.48As contacts using capacitance–voltage (C–V), current–voltage, Auger electron spectroscopy, and x-ray diffraction analyses and compared the results to those for Pd/Al0.25Ga0.75As and Pd/In0.53Ga0.47As contacts. The thickness of InAlAs consumed by the reaction during annealing was calculated directly from the measured C–V profiles. Pd starts to react with InAlAs at a temperature of 100 °C, lower than it does with AlGaAs. For thermally annealed Pd/InAlAs and Pd/AlGaAs, both compositional and structural changes were found at the Pd/semiconductor interface. However, in heat-treated Pd/InGaAs samples, compositional changes but no structural changes were observed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366692
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  • 10
    Electronic Resource
    Electronic Resource
    Thermal reactions of Pd/AlxGa1−xAs contacts (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2891-2895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pd/AlxGa1−xAs Schottky contacts and their thermal reactions are studied by capacitance–voltage measurements, current–voltage measurements, and x-ray diffraction. The thickness of AlxGa1−xAs consumed by the Pd/AlxGa1−xAs reaction during annealing was calculated. For annealing temperatures below 300 °C the Schottky characteristics of the diodes were good but the electrical junction moves into AlxGa1−xAs after annealing. The amount of junction movement was calculated directly from our measurements. The diffusion coefficients of Pd in AlxGa1−xAs and the activation energy were estimated. The activation energy was found to be larger for higher Al concentration. PdAl, PdAs2, PdGa5, and Pd5Ga2 were detected in the compounds formed by the Pd/AlxGa1−xAs reaction after annealing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363141
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