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  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 173 (1993), S. 163-171 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 62 (1977), S. 231-233 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4796-4798 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For nickel on the chemically clean surface of undoped semi-insulating GaAs at room temperature, an upward surface band bending of 0.062 eV and a barrier height of 0.690 eV have been observed by the photovoltage and the internal photoemission techniques, respectively. The observed surface band bending is in excellent agreement with its predicted value, and the observed barrier height also agrees very well with its value from the very careful analysis of reversed I-V data. It has been determined that the interfacial Fermi level lies at 0.690 eV below the GaAs conduction band minimum at the interface. The interfacial Fermi level is found to coincide with the energy level of the EL2 native defect, indicating the importance of the EL2 in the Fermi level pinning at the interface. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7423-7427 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometric measurements for Pt/n-Si samples with different thickness of Pt films have been performed. The thickness of the Pt films determined with the three-phase model (air/Pt/Si) changes with the wavelength λ while that with the four-phase model (air/Pt/interface layer/Si) remains unchanged, showing the existence of an interface layer. At the same time, the apparent optical dielectric constants of the interface layer as a function of λ are also obtained. A calculation based on the effective medium theory is carried out to simulate the optical dielectric data of the interface layer. Some structural information of the interface layer is obtained from the calculation. © 1994 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7624-7626 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical modeling of the transient characteristics of the photovoltage at metal-semiconductor interfaces has been carried out with a simple model in which the contributions of different current transport processes including thermionic emission, tunneling, carrier recombination, and leakage current have been taken into account. The simulation gives the detailed dependence of the transient characteristics on temperature, doping concentration, Schottky barrier height, and leakage resistance. © 1994 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7361-7364 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The leakage resistance of Schottky contacts has been determined from photovoltage measurements, thus allowing the contribution of the leakage current to the current transport in the Schottky contacts to be easily evaluated. It is found that under identical conditions of sample fabrication, different Schottky contacts have nearly the same leakage resistance. A comparison between a theoretical calculation and experimental data for the photocurrent-photovoltage relationship shows that the leakage current becomes dominant at low temperatures and small photocurrents. In these regimes, the current transport is dominated by the leakage current, and as a result, a linear relation (the Ohmic rule) between the photocurrent and the photovoltage is observed.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6724-6726 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The measurements of internal photoemission and photovoltage within the temperature range of 7–300 K have been performed for unannealed and annealed Au/n-Si and Au/n-GaAs samples. From the internal photoemission measurements, it was observed that annealing at different temperatures does not affect the relativity of interfacial Fermi-level pinning to either the conduction band (for Au/GaAs) or the valence band (for Au/Si) but leads to a significant change of the Schottky barrier height. On the other hand, the photovoltage measurements show that the current transport at the metal/semiconductor interfaces is seriously affected by annealing. © 1995 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5831-5833 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three series of ferromagnetic alloys have been made: Co100−xPdx, Co25Ni75−yPdy and Co5−zNizPd95. The electrical resistivity ρ of these alloys was measured from 4 to 300 K. Their high field (H(approximately-greater-than)2 T) susceptibility χHF was obtained with superconducting quantum interference device measurements at 5 K. Comparing the residual resistivity ρ0 of Co-Ni and Co-Pd, it is found that the spin-up resistivity ρ↑ of Co-Ni follows the Nordheim's rule, while that of Co-Pd peaks at x=85. This indicates the spin-up d band of Co-Pd is not full for all the x values. Also, χHF data reveal the same tendency of the spin-up band. Based on the deviation from Matthiessen's rule of the two-current model, we estimate α=ρ0↓ /ρ0↑(approximately-equal-to)2 for the dilute PdCo alloy, where ρ0=ρ0↓ ρ0↑/(ρ0↑+ρ0↓ ), from the residual resistivity of the ternary Co5−zNizPd95 alloy and from the temperature dependence of ρ(T) of the binary Co5Pd95 alloy
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 545-549 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To avoid the thermal decomposition of the GaAs surface during the postimplanted annealing, a silicon oxynitride (SiOxNy) encapsulate layer grown by plasma-enhanced chemical vapor deposition has been systematically studied. SiOxNy with the refraction index of 1.7–1.8 exhibited the best encapsulated performance after high-temperature annealing. Using Raman spectroscopy, etch-pit densities, photoluminescence, and Hall-effect measurements, this composition of the encapsulate layer on GaAs possessed the lowest surface defect, the best thermal stability, and the highest electrical activity of the implanted dopant. Thermal conversion is present when SiO- and SiN- rich films are used and is tentatively attributed to the generation of Ga vacancies during the annealing process.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 492-494 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With the I–V measurement technique that forced a current to an ultrathin gate oxide and measured the voltage drop, a snapback phenomenon, i.e., the gate oxide was switched from a higher-impedance state to a lower-impedance state suddenly, was observed during the postbreakdown I–V measurement. The snapback could be triggered at a very low measurement current. Single or multiple snapbacks have been observed, and it was found that the occurrence of snapback was a random event. The snapback is explained in terms of the formation of an additional percolation path due to the neutralization of negatively charged traps or the generation of neutral electron traps at certain strategic positions during the measurement. © 2001 American Institute of Physics.
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