Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 492-494
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
With the I–V measurement technique that forced a current to an ultrathin gate oxide and measured the voltage drop, a snapback phenomenon, i.e., the gate oxide was switched from a higher-impedance state to a lower-impedance state suddenly, was observed during the postbreakdown I–V measurement. The snapback could be triggered at a very low measurement current. Single or multiple snapbacks have been observed, and it was found that the occurrence of snapback was a random event. The snapback is explained in terms of the formation of an additional percolation path due to the neutralization of negatively charged traps or the generation of neutral electron traps at certain strategic positions during the measurement. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1342214
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