Publication Date:
2015-06-18
Description:
Author(s): Yutaka Ohno, Kaihei Inoue, Kentaro Kutsukake, Momoko Deura, Takayuki Ohsawa, Ichiro Yonenaga, Hideto Yoshida, Seiji Takeda, Ryo Taniguchi, Hideki Otubo, Sigeto R. Nishitani, Naoki Ebisawa, Yasuo Shimizu, Hisashi Takamizawa, Koji Inoue, and Yasuyoshi Nagai We investigate copper (Cu) precipitation at small-angle tilt boundaries on (220) in Czochralski-grown p-type silicon (Si) ingots using transmission electron microscopy, atom probe tomography, and ab initio calculations. In the initial stage of precipitation, Cu atoms agglomerate along the boundaries... [Phys. Rev. B 91, 235315] Published Wed Jun 17, 2015
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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