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  • 1
    Publication Date: 2022-05-25
    Description: Author Posting. © The Author(s), 2018. This is the author's version of the work. It is posted here by permission of Cell Press for personal use, not for redistribution. The definitive version was published in Cell Host and Microbe 23 (2018): 809-818, doi:10.1016/j.chom.2018.04.015.
    Description: Influenza A virus (IAV) infection is initiated by the attachment of the viral glycoprotein hemagglutinin (HA) to sialic acid on the host cell surface. However, the sialic acid– containing receptor crucial for IAV infection has remained unidentified. Here we show that HA binds to the voltage-dependent Ca2+ channel Cav1.2 to trigger intracellular Ca2+ oscillations and subsequent IAV entry and replication. IAV entry was inhibited by Ca2+ channel blockers (CCBs) or by knockdown of Cav1.2. The CCB diltiazem also inhibited virus replication in vivo. Reintroduction of wild-type but not the glycosylation-deficient mutants of Cav1.2 restored Ca2+ oscillations and virus infection in Cav1.2-depleted cells, demonstrating the significance of Cav1.2 sialylation. Taken together, we identify Cav1.2 as a sialylated host cell surface receptor that binds HA and is critical for IAV entry.
    Description: This work was supported in part by Grants-in-Aid from the Ministry of Education, Culture, Sports, Science and Technology of Japan (#26115701 and #15H01248), from the Japan Society for the Promotion of Science (#26293041 and #16H06227), and from the Japan Agency for Medical Research and Development (JP17fk0108124j0601), as well as by grants from Mochida Memorial Foundation for Medical and Pharmaceutical Research, the Waksman Foundation of Japan, the Sumitomo Electric Group Corporate Social Responsibility Foundation, and SENSHIN Medical Research Foundation.
    Description: 2019-05-17
    Repository Name: Woods Hole Open Access Server
    Type: Preprint
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3394-3400 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of midgap states in n-type AlxGa1−xAs grown by the metalorganic vapor phase epitaxy were investigated by the deep level transient spectroscopy and photocapacitance (PHCAP) techniques. A new PHCAP measurement procedure to avoid interference from the photoionization of the DX center was used. Two near-midgap levels, i.e., a higher lying MH level and a lower lying ML level were detected. As AlAs mole fraction, x, is increased, the energy positions of these two levels became deeper, maintaining a remarkable horizontal alignment with respect to the hybrid orbital energy level. The ML level showed a clear photoquenching for x〈0.3, but the quenching disappeared for x(approximately-greater-than)0.3. No photoquenching of the MH level was observed for all x investigated. Similarity of the photoquenching behavior to GaAs 1−x Px as well as its energy position and optical cross sections led to the conclusion that the ML level is an As-related EL2-like defect. On the other hand, the MH level originates from a defect related to Al.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2120-2130 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compound semiconductor metal-insulator-semiconductor (MIS) capacitance-voltage (C-V) curves are simulated on a computer, assuming the presence of a disorder-induced gap-state (DIGS) continuum near the interface in which bonding and antibonding states are distributed both in space and in energy around a particular charge neutrality point, EHO . A program based on Shockley–Read–Hall statistics is developed and applied to simulate a set of experimental MIS C-V curves measured on Al2 O3 /native oxide/InP MIS capacitors. By assuming a particular type of energy and spatial distribution of DIGS continuum and a suitable single set of dynamic parameters, the simulation can completely and self-consistently reproduce the experimental MIS C-V curves with complex hysteresis behavior, which varies with the bias amplitude and swing speed. The excellent agreement between theory and experiment supports the DIGS model. The danger involved in simply applying Terman's method to determine an Nss distribution is pointed out. A quick procedure for reasonably accurate Nss measurement is suggested.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4778-4782 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The design, fabrication, and characterization of newly developed hydrogenated amorphous silicon position sensitive detectors (a-Si:H PSDs) which employ a tunnel metal-insulator-semiconductor (MIS) structure fabricated by anodic oxidation processes are described. Tunnel MIS structure is chosen as the a-Si:H PSD structure, since it offers high breakdown voltage compared to a-Si:H pin or Schottky-type structures. PSD process includes two-step anodic oxidation of a-Si:H: (1) oxidation in the dark to passivate defects and shunt paths introduced during the growth of a-Si:H layer and (2) oxidation with light to grow thin native oxide to provide barrier between metal and a-Si:H. The fabricated large-area, two-dimensional PSDs, as large as 3 cm×3 cm, show the incident beam position within error of less than 2% of the length of PSD.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4598-4603 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of γ irradiation on deep electron states in liquid encapsulated Czochralski (LEC) grown GaAs has been investigated by deep-level transient spectroscopy (DLTS) and photocapacitance measurements. With γ rays of 2×108 R, EL6 was reduced in concentration by a factor of 3–5, whereas EL3 was increased about one order of magnitude, as compared with those in as-grown material. In addition to E traps that were previously reported in electron-irradiated material, two new traps were observed near the surface region. From their concentration profiles and annealing behavior, the new traps were most likely created by the interaction of the primary irradiation-induced defects with the grown-in defects. In contrast to these results, neither the DLTS spectrum nor the metastable behavior of EL2 was affected by γ irradiation.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2525-2527 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of low-dimensional microstructures in the growth of strained GaInAs/AlInAs and GaInAs/InP heterostructures on planar InP (311)B and (311)A substrates by metalorganic vapor-phase epitaxy is investigated by atomic force microscopy. The surface structures are found to be similar to those previously reported for GaAs (311)B and (311)A substrates. In particular, the appearance of zero-dimensional microstructures in the GaInAs/AlInAs system on InP (311)B substrates is analogous to the self-organizing formation of buried InGaAs quantum disks in the case of GaAs (311)B substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2854-2856 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained quantum-box structures are naturally formed during the interrupted growth of AlGaAs and InGaAs films on GaAs (n11)B substrates. InGaAs films organize spontaneously into orderly rows of nanoscale disks buried beneath AlGaAs microcrystals. A comparative study by atomic force microscopy shows the alignment and uniformity to be optimum on (311)B surfaces. Both the uniformity and the shape of the microcrystals are not changed for base widths between 220 and 70 nm. Moreover the size and distance can be controlled independently by the In composition and the InGaAs layer thickness, respectively. In contrast, step bunching occurs on GaAs (n11)A substrates to form wirelike microstructures on GaAs (311)A substrates. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1546-170X
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Medicine
    Notes: [Auszug] Adult T-cell leukemia-lymphoma (ATLL) is a group of T-cell malignancies caused by infection with human T-lymphotropic virus type I (HTLV-I). Although the pathogenesis of ATLL remains incompletely understood, the viral regulatory protein Tax is centrally involved in cellular transformation. Here we ...
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Chemical Vapor Deposition 1 (1995), S. 81-88 
    ISSN: 0948-1907
    Keywords: Quantum dots ; Quantum wires ; Self-organization ; MOVPE ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We present evidence of the new phenomenon of the direct growth of microstructures by metal-organic vapor-phase epitaxy (MOVPE) on high-index GaAs substrates. One- and zero-dimensional self-faceting by step bunching on GaAs (n11)A substrates produces quantum-wire- and dot-like arrays on GaAs(311)A and GaAs (211)A substrates. The lateral periodicity of self-faceting is controlled by the layer thickness and growth temperature and is directly correlated with the red shift of the luminescence of GaAs/AlGaAs heterostructures. On GaAs (n11)B substrates, well-ordered quantum-dot arrays are formed in a new self-organizing growth mode found in the MOVPE of a sequence of AlGaAs and strained InGaAs films. The InGaAs film spontaneously interacts with AlGaAs buffer layers to form ordered arrays of disk-shaped InGaAs quantum dots buried within AlGaAs microcrystals due to lateral mass transport. The size and distance of the disks can be controlled independently by the In composition and the InGaAs layer thickness. Similar structures are also formed on InP (311)B substrates in the GaInAs/AlInAs and GaInAs/InP material systems. Lateral confinement of carriers in the disks is confirmed by the photoluminescence linewidth which, at room temperature, is as narrow as 13 meV due to reduced thermal broadening.
    Additional Material: 12 Ill.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part A: Polymer Chemistry 36 (1998), S. 2691-2698 
    ISSN: 0887-624X
    Keywords: N-substituted pyrrole ; liquid crystalline polymer ; polypyrrole ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Three liquid crystalline N-substituted pyrroles were synthesized from 6-(1-pyrrolyl)hexanol with phenolic derivatives having a mesogenic core of cyclohexylbenzene or biphenyl by Mitsunobu reaction. These pyrroles had two anodic peaks at 1.4 and 1.8 V (vs. SCE). The former was due to an oxidation of the pyrrole moiety and the latter was due to an oxidation of the mesogenic moiety. These pyrrole monomers were polymerized by electrochemical and chemical methods. The potentiostatic method and the chemical method using FeCl3 gave a soluble and fusible polymer, respectively. A polymer having a mesogenic core of cyclohexyl benzene obtained by the chemical method and a polymer having a mesogenic core of biphenylketone obtained by the potentiostatic method had a liquid-crystalline phase. The phase was identified as smectic A by polarizing microscopy and XRD analysis. © 1998 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 36: 2691-2698, 1998
    Additional Material: 5 Ill.
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