ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (19)
  • Springer  (11)
  • American Institute of Physics (AIP)  (8)
  • Physics  (19)
  • Economics
  • Computer Science
Collection
  • Articles  (19)
Source
Keywords
Publisher
Years
Journal
Topic
  • 1
    Electronic Resource
    Electronic Resource
    Etching of SiO2 in an electron cyclotron resonance argon plasma (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1311-1313 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etching of SiO2 with low-energy Ar ions has been studied in an electron cyclotron resonance (ECR) based etching system. Ion energies were controlled by a capacitively coupled 13.56 MHz bias of the substrate. Etch rates of over 100 A(ring)/min have been achieved at ion energies below 100 V. The variation in etch rate has been studied as a function of ECR power, self-induced bias, and position of the wafer relative to the ECR source. This low-energy process can be utilized for cleaning of semiconductor surfaces prior to chemical vapor deposition or metallization processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103198
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Reactive ion etch process with highly controllable GaAs-to-AlGaAs selectivity using SF6 and SiCl4 (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1083-1085 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a reactive ion etch process with high selectivity for etching GaAs layers and stopping on underlying AlGaAs layers is reported. A key feature is the high degree of control that can be maintained over the GaAs-to-AlGaAs selectivity by changing the SF6/SiCl4 ratio while keeping other etch parameters such as pressure, dc bias, or power constant. Values of the GaAs-to-AlGaAs selectivity can be varied from 1 to 500. Diluent gases such as helium can be added to reduce the etch rate, which is important to avoid damage to sensitive device structures and to the overhang profile of resist materials used for liftoff metallization. The application of this etch process for high electron mobility transistor fabrication is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98747
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Use of thin AlGaAs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devices (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2225-2226 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching is important for III-V device fabrication. Commonly encountered applications include the need to remove an epitaxial layer selectively from underlying layers and the need for definition of mesas and other structures with carefully controlled dimensions. We present results showing the use of very thin Al0.9Ga0.1As and In0.2Ga0.8As stop-etch layers, which when used in conjunction with a particular etch chemistry can provide highly selective removal of epitaxial layers in GaAs-based III-V compound semiconductors. In addition, we report the selective removal of an Al0.3Ga0.7As layer from underlying GaAs by the use of a thin In0.2Ga0.8As interlayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98947
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Observation of slip dislocations in (100) silicon wafers after BF2 ion implantation and rapid thermal annealing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 800-802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of slip dislocations in BF2 ion-implanted, 100-mm-diam silicon wafers during rapid thermal annealing is investigated. Whole wafer x-ray topography shows that annealing at 1150 °C causes slip to initiate randomly at positions of maximum resolved stress at the wafer edges and over scribe marks made on the back surface prior to annealing. Lowering the annealing temperature by 20 °C, which corresponds to decreasing the silicon yield stress by less than 106 dyn cm−2, prevents slip from occurring and allows sufficient removal of implantation-induced defects from which junction diodes with good current-voltage characteristics are fabricated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337377
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Electron cyclotron resonance plasma-enhanced filament-assisted diamond growth (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1444-1446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique was developed to grow high-purity polycrystalline diamond films at 850 °C and 50 mTorr with 10% CH4, 2% O2, and balance H2 using a filament-assisted chemical vapor deposition technique in combination with an electron cyclotron resonance (ECR) plasma. Using Raman spectroscopy and in situ plasma diagnostics, we have shown that the hydrogen plasma selectively etched nondiamond components during deposition. Experiments with ECR plasma and the filament-assisted technique from 10−6 Torr to 50 mTorr and 500–1000 °C indicated that low-energy electrons are a key factor in growth of diamond thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107265
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Piezoelectric field effects in InGaAs (111)B quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1393-1395 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained In0.21Ga0.79As/GaAs quantum well structures have been grown by molecular beam epitaxy on (111)B GaAs substrates. Well widths between 20 and 160 A(ring), separated by 500 A(ring) barriers were grown sequentially on the same substrate and subsequently characterized by low-temperature (10 K) photoluminescence. The variation of the e-hh transition energy with well width is markedly different for samples grown simultaneously on (100) and (111)B substrates due to the strain induced piezoelectric field. Using the envelope function approximation, the dependence of n=1 e-hh transitions of (111)B samples on well width can be interpreted by the presence of a built-in electric field of magnitude of 1.45×107 V/m. In contrast to the (100) sample, exciton lifetimes in the (111)B sample depend strongly on well width because of spatial separation of electrons and holes in the triangular wells. In the 160 A(ring) well, the exciton lifetime increases to 755 ns corresponding to a reduction of about three orders of magnitude in the electron-hole wave function overlap integral. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115544
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Polymorphisms of the Vitamin D Receptor, Infant Growth, and Adult Bone Mass (1997)
    Springer
    Calcified tissue international 60 (1997), S. 233 -235 
    Details
    ISSN: 1432-0827
    Keywords: Key words: Bone density — Vitamin D receptor — Polymorphism — Growth — Genetic.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine , Physics
    Notes: Abstract. Family and twin studies have demonstrated a strong genetic component to the development of peak bone mass. Early fetal and infant environment has also been shown to influence bone mass through an effect on skeletal size and mineral content. We report a retrospective study that has examined whether early infant growth is regulated by genetic factors shown to be associated with bone mass. We have determined the vitamin D receptor (VDR) gene alleles for 66 women (mean age 65.5 years) on whom detailed birth records were available. There was a statistically significant trend (P= 0.04) for VDR genotype against weight at the age of 1 year, with the ``tt'' homozygote group having 7% higher weight. We conclude that early fetal or infant environment may interact with an individual's underlying genotype to program early skeletal growth, and that this may track through later life to influence adult characteristics. Further prospective studies are required, however, to fully clarify the precise environmental and genetic mechanisms underlying these findings.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002239900220
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Biochemical Markers of Bone Turnover and Bone Loss at the Lumbar Spine and Femoral Neck: The Taiji Study (1999)
    Springer
    Calcified tissue international 65 (1999), S. 198-202 
    Details
    ISSN: 1432-0827
    Keywords: Key words: Bone metabolic markers — Predictor — Osteoporosis — Epidemiology — Bone mineral density.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine , Physics
    Notes: Abstract. The purpose of this study was to ascertain whether biochemical markers of bone turnover predict bone loss. The survey was carried out in Taiji, Wakayama Prefecture, Japan. From a list of inhabitants aged 40–79 years, 400 participants (50 men and 50 women in each of four age groups) were selected randomly. Bone mineral density (BMD) was measured, and blood and urine samples of all participants were examined to obtain values for eight biochemical markers: alkaline phosphatase (ALP), bone Gla protein (BGP), type I procollagen (carboxyterminal peptide of type I procollagen; PICP), cross-linked carboxyterminal telopeptide region of type I collagen (ICTP), and urinary excretion of calcium (Ca), phosphate (P), pyridinoline (Pyr), and deoxypyridinoline (D-Pyr). Each marker was evaluated as a predictor of the rate of bone change in lumbar spine and femoral neck BMD over a 3-year period. The value of Pyr was significantly related to the change of lumbar spine BMD in men (P= 0.009), and that of BGP was found to be significant in women (P= 0.045). By contrast, none of the bone markers significantly correlated with bone loss at the femoral neck. The coefficient of determination at the lumbar spine was 5% and 7% at the femoral neck only. We conclude that biochemical markers of bone turnover cannot predict bone loss rates in middle-aged or elderly Japanese men and women over a 3-year period with sufficient accuracy for use in clinical decision making.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002239900682
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    The Relationship Between Childhood Growth, Bone Mass, and Muscle Strength in Male and Female Adolescents (1997)
    Springer
    Calcified tissue international 60 (1997), S. 405 -409 
    Details
    ISSN: 1432-0827
    Keywords: Key words: Bone mineral density — Bone mineral content — Childhood growth — Dual X-ray absorptiometry — Muscle strength.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine , Physics
    Notes: Abstract. In this population-based study, the relationship between childhood weight and height, and adolescent bone mass and muscle strength have been studied in 39 girls and 48 boys. Total body and femoral neck bone mass measurements (bone mineral content, BMC and bone mineral density, BMD) were made by dual X-ray absorptiometry. Quadriceps muscle strength was measured. Mean age at the time of measurement was 15.1 years for girls and boys. Results were individually linked to data on childhood (birth to 6 years of age) weight and height, taken from community health records. Childhood weight was found to be predictive of adolescent total body BMC (TBMC). However, this was not the case when correlating childhood weight and total body BMD (TBMD), suggesting that growth determines the size of the skeleton, whereas the density within that bone envelope is to a greater extent governed by other factors. Further, in a multiple regression model we found that the combined effect of childhood weight and height was significantly correlated with adolescent quadriceps muscle strength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002239900253
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    The simulation of SST, sea ice extents and ocean heat transports in a version of the Hadley Centre coupled model without flux adjustments (2000)
    Springer
    Climate dynamics 16 (2000), S. 147-168 
    Details
    ISSN: 1432-0894
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract Results are presented from a new version of the Hadley Centre coupled model (HadCM3) that does not require flux adjustments to prevent large climate drifts in the simulation. The model has both an improved atmosphere and ocean component. In particular, the ocean has a 1.25° × 1.25° degree horizontal resolution and leads to a considerably improved simulation of ocean heat transports compared to earlier versions with a coarser resolution ocean component. The model does not have any spin up procedure prior to coupling and the simulation has been run for over 400 years starting from observed initial conditions. The sea surface temperature (SST) and sea ice simulation are shown to be stable and realistic. The trend in global mean SST is less than 0.009 °C per century. In part, the improved simulation is a consequence of a greater compatibility of the atmosphere and ocean model heat budgets. The atmospheric model surface heat and momentum budget are evaluated by comparing with climatological ship-based estimates. Similarly the ocean model simulation of poleward heat transports is compared with direct ship-based observations for a number of sections across the globe. Despite the limitations of the observed datasets, it is shown that the coupled model is able to reproduce many aspects of the observed heat budget.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003820050010
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...