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  • Other Sources  (335)
  • ELECTRONICS AND ELECTRICAL ENGINEERING  (335)
  • 1990-1994  (190)
  • 1985-1989  (145)
  • 1960-1964
  • 1
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    Update on parts SEE suspectibility from heavy ions (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: JPL and the Aerospace Corporation have collected a fourth set of heavy ion single event effects (SEE) test data. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are displayed. All data are conveniently divided into two tables: one for MOS devices, and one for a shorter list of recently tested bipolar devices. In addition, a new table of data for latchup tests only (invariably CMOS processes) is given.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); 38; 1529-153
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    A resistive-gate In(0.53)Ga(0.47)As/InP heterostructure CCD (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: The first InGaAs/InP charge-coupled device is demonstrated, exhibiting a charge transfer efficiency (CTE) of 0.98 at 13 MHz and 1 GHz. Cooling the device improves the CTE to greater than 0.99 at 13-MHz clock frequency. The 0.76-eV In(0.53)Ga(0.47)As bandgap makes this structure applicable to direct-detection short-wavelength infrared imagers.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Electron Device Letters (ISSN 0741-3106); 12; 688-690
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  • 3
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    Resonant-tunnelling diode oscillator using a slot-coupled quasioptical open resonator (1991)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: A resonant-tunneling diode has oscillated at X-band frequencies in a microwave circuit consisting of a slot antenna coupled to a semiconfocal open resonator. Coupling between the open resonator and the slot oscillator improves the noise-to-carrier ratio by about 36 dB relative to that of the slot oscillator alone in the 100-200 kHz range. A circuit operating near 10 GHz has been designed as a scale model for millimeter- and submillimeter-wave applications.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Electronics Letters (ISSN 0013-5194); 27; 647-649
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  • 4
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    Peeled film GaAs solar cells for space power (1990)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epitaxy (OMVPE), incorporating an aluminum arsenide (AlAs) parting layer between the device structure and the GaAs substrate. This layer was selectively removed by etching in dilute hydrofloric (HF) acid to release the epitaxial film. Test devices exhibit high series resistance due to insufficient back contact area. A new design is presented which uses a coverglass superstrate for structural support and incorporates a coplanar back contact design. Devices based on this design should have a specific power approaching 700 W/Kg.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-103125 , E-5453 , NAS 1.15:103125
    Format: application/pdf
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  • 5
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    Peeled film GaAs solar cell development (1990)
    In:  Other Sources
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    Publication Date: 2019-07-13
    Description: Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid. The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide window and antireflective coating, had a Voc of 874 mV and a fill factor of 68 percent under AM0 illumination.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Photovoltaic Specialists Conference; May 21, 1990 - May 25, 1990; Kissimmee, FL; United States
    Format: text
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    NASA TECHNICAL REPORTS
  • 6
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    Buffer layers for high-Tc thin films on sapphire (1992)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Journal of Superconductivity (ISSN 0896-1107); 5; 4; p. 353-359.
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  • 7
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    A quasioptically stabilized resonant-tunneling-diode oscillator for the millimeter- and submillimeter-wave regions (1992)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: A semiconfocal open-cavity resonator has been used to stabilize a resonant-tunneling-diode waveguide oscillator at frequencies near 100 GHz. The high quality factor of the open cavity resulted in a linewidth of approximately 10 kHz at 10 dB below the peak, which is about 100 times narrower than the linewidth of an unstabilized waveguide oscillator. This technique is well suited for resonant-tunneling-diode oscillators in the submillimeter-wave region.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); 40; 5, Ma; 846-850
    Format: text
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  • 8
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    Lateral tunneling through voltage-controlled barriers (1991)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: The paper reports on a detailed experimental investigation of lateral tunneling between electrodes of a two-dimensional electron gas separated by the voltage-controlled barrier of a nanometer Schottky gate. The experimental data are modeled using the WKB method to calculate the tunneling probability of electrons through a barrier whose shape is determined from a solution of the two-dimensional Poisson equation. This model is in excellent agreement with the experimental data over a two order of magnitude range of current.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 59; 213-215
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  • 9
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    Photon detection with cooled avalanche photodiodes (1987)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Commercial avalanche photodiodes have been operated as single-photon detectors at an optimum operating temperature and bias voltage. These detectors were found to be 1.5-3 times more sensitive than presently available photomultiplier tubes (PMTs). Both single-photon detection probability and detector noise increase with bias voltage; detection probabilities greater than twice that of a PMT were obtained with detector noise levels below 100 counts per second. Higher probabilities were measured at higher noise levels. The sources of noise and their dependence on temperature and bias voltage are discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 51; 1493
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  • 10
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    An experimental study of high Tc superconducting microstrip transmission lines at 35 GHz and the effect of film morphology (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Microstrip transmission lines in the form of ring resonators were fabricated from a number of in-situ grown laser ablated films and post-annealed co-sputtered YBa2Cu3O(7-x) films. The properties of these resonators were measured at 35 GHz and the observed performance is examined in light of the critical temperature (Tc) and film thickness, and also the film morphology, which is different for the two deposition techniques. It is found that Tc is a major indicator of the film performance for each growth type, with film thickness becoming important as it decreases towards 1000 A. It is also found that the films with a mixed grain orientation (both a-axis and c-axis oriented grains) have poorer microwave properties as compared with the primarily c-axis oriented material. This is probably due to the significant number of grain boundaries between the different crystallites, which may act as superconducting weak links and contribute to the surface resistance.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Magnetics (ISSN 0018-9464); 27; 2940-294
    Format: text
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