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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial YBa2Cu3O7−δ thin films on SrRuO3/Pt/MgO (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 634-636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial YBa2Cu3O7−δ (YBCO) thin films were deposited on (100) MgO using platinum and SrRuO3 (SRO) buffer layers by pulsed laser deposition. The films were (001) textured normal to substrate surface with a high degree of in-plane orientation with respect to the substrate's major axes. YBCO films showed superconducting transition temperature (Tco) at 91 K and critical current densities were found to be 2–3×106 A/cm2 at 77 K and zero field. An ion beam minimum channeling yield of 16% was obtained for YBCO films, indicating high crystallinity. The orientation relationship for this epitaxial multilayer structure was found to be (100) YBCO(parallel)(100) SRO(parallel)(100)Pt(parallel)(100) MgO. This result showed that high-quality superconducting thin films can be deposited on metal with an appropriate buffer layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111965
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  • 2
    Electronic Resource
    Electronic Resource
    Orientation of YBa2Cu3O7−x films on unbuffered and CeO2-buffered yttria-stabilized zirconia substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4753-4760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−x (YBCO) films deposited by pulsed laser ablation on unbuffered and CeO2-buffered yttria-stabilized zirconia (YSZ) substrates were studied by x-ray diffraction and transmission electron microscopy to investigate film orientation. From φ scans it was determined that the unbuffered films possess two major in-plane orientation relationships with the substrate. Both have (001)YBCO(parallel)(001)YSZ, with either [100]YBCO(parallel)[100]YSZ or [110]YBCO(parallel)[100]YSZ, a 0° or 45° orientation, respectively. As deposition temperature increases, satellite peaks that straddle the 0° or 45° orientations develop. The Σ boundary and near coincident site lattice descriptions are applied to the discussion of these misorientations. In general the CeO2-buffered YBCO films align with to the 45° orientation to the CeO2 buffer layer. Out-of-plane film orientation was investigated for both unbuffered and CeO2-buffered YBCO films and expressed as a ratio of the amount of c⊥ material to a⊥ material. Buffered films exhibited c⊥ material to a⊥ material ratios approximately twice those of unbuffered films. Transmission electron microscopy combined with the x-ray data was used to develop an explanation for the trends in the variation of the c⊥/a⊥ ratio with film deposition temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357245
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  • 3
    Electronic Resource
    Electronic Resource
    Superconductor GdBa2Cu3O7−δ edge junctions with lattice-matched Y0.6Pr0.4Ba2Cu3O7−δ barriers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2871-2873 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature-superconductor Josephson junctions with an edge geometry of superconductor/normal-metal/superconductor have been fabricated on yttria-stabilized zirconia substrates by engineering the electrode and N-layer material to reduce the lattice mismatches (a, b, and c). With GdBa2Cu3O7−δ as electrodes and Pr-doped Y0.6Pr0.4Ba2Cu3O7−δ as a barrier, the lattice mismatches from electrode and barrier layer are reduced to a very low level. The junctions fabricated with such a design demonstrate resistively shunted junction current-voltage characteristics under dc bias at temperatures in the range of 77–88 K. The quite low specific interface resistivity on the order of 10−10 Ω cm2 indicates that the junction performance is controlled by the normal-metal (N) layer material instead of the interfaces. The use of lattice-matched electrode and N-layer material is one of the key design rules to obtain controllable high-temperature superconductor Josephson junctions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360094
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  • 4
    Electronic Resource
    Electronic Resource
    Properties of YBa2Cu3O7−δ films upon low fluence laser irradiation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7161-7163 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical responses and crystallinity of YBa2Cu3O7−δ films were measured as a function of excimer laser exposure (308 nm) and laser fluences ranging from 20 to 150 mJ/cm2. Tc and Jc were measured with an inductive technique and with standard dc transport measurements. The crystallinity of the films, as determined by Rutherford backscattering spectrometry, scanning electron microscopy, and x-ray diffraction, was altered by the formation of a degraded surface layer, even at fluences well below the melting threshold. The critical current of a film can be modified with a high degree of accuracy and can be correlated with a boundary layer in the film. This allows for the critical current to be decreased over three orders of magnitude with a resolution of 255 A/cm2 per laser shot.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349778
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  • 5
    Electronic Resource
    Electronic Resource
    Correlation of surface topography and flux pinning in superconducting YBaCuO films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5099-5102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface topography of YBa2Cu3O7 thin films prepared by pulsed laser deposition is studied by atomic force microscopy and scanning tunneling microscopy. The possible contributions from observed structural features to the critical current density Jc are discussed. It is shown that the contribution of the screw dislocations associated with some structures can be either repulsive or attractive, depending on the dominant pinning mechanism. At low magnetic fields (to about 0.25 kOe) these dislocations can account for the observed critical current density values (Jc(approximately-greater-than)1011 A/m2) while for larger fields the higher-density steplike growth structures can account for significant values of Jc. It is shown that the pinning strength associated with pinning at steps varies inversely with thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350612
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  • 6
    Electronic Resource
    Electronic Resource
    Relationship between film thickness and the critical current of YBa2Cu3O7−δ-coated conductors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3692-3694 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During the development of YBa2Cu3O7−δ (YBCO) coatings on flexible metal tapes, it has become evident that the achievable critical current (Ic) reaches a maximum value of about 200 A per cm of conductor width at a coating thickness of 1–2 μm. Additional YBCO beyond this thickness can actually reduce Ic. To investigate, critical current density (Jc) has been measured for samples with YBCO ranging from 0.39 to 6.3 μm in thickness. Several films were thinned by ion milling and remeasured with two significant results: almost no supercurrent is carried at thickness levels above 2 μm; and for films thicker than 3 μm, Jc is drastically reduced near the substrate as well. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125431
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  • 7
    Electronic Resource
    Electronic Resource
    High-temperature superconducting thick films with enhanced supercurrent carrying capability (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1601-1603 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a multilayer architecture to enhance the supercurrent carrying capability of thick (〉1 μm) YBa2Cu3O7−x (YBCO) films. An interlayer of CeO2, which functions as a starting template for growth of subsequent high-quality YBCO layers, is used to prohibit the generation of microstructural defects that otherwise develop in the top region of thick YBCO films. Improved surface quality for a 3.3 μm thick YBCO film has been confirmed by the channeling data of Rutherford backscattering spectroscopy and by scanning electron microscopy. Compared to our routinely prepared single-layer YBCO thick film in which the supercurrent drops rapidly with increasing film thickness, this multilayer makes it possible to maintain critical current density over 1 MA/cm2 with less restrictions on the thickness of coated conductors. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455143
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  • 8
    Electronic Resource
    Electronic Resource
    Integration of nonlinear dielectric barium strontium titanate with polycrystalline yttrium iron garnet (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1564-1566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Biaxially oriented nonlinear dielectric Ba0.6Sr0.4TiO3 (BST) films have been grown on polycrystalline ferrite yttrium iron garnet (YIG) substrates. We use a structurally and chemically compatible MgO buffer to improve the crystallinity of the BST on polycrystalline YIG substrates, where the biaxially oriented MgO is deposited by an ion-beam assisted-deposition technique. The biaxially oriented BST has a dielectric loss of less than 0.01 and a capacitance tunability of greater than 25% at a direct current bias voltage of 40 V at room temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123617
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  • 9
    Electronic Resource
    Electronic Resource
    Microwave surface resistance of YBa2Cu3Cu3O7−x films on polycrystalline ceramic substrates with textured buffer layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1626-1628 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used a parallel-plate resonator technique to measure the microwave surface resist- ance Rs of YBa2Cu3O7−x (YBCO) films on buffered ceramic substrates at around 10 GHz, and studied the correlation between their Rs and materials properties. A 0.4-μm-thick YBCO film (with an in-plane mosaic spread of 7°) grown on a polycrystalline alumina substrate with an ion-beam-assisted-deposited yttria-stabilized zirconia buffer layer showed an Rs of 1.89 mΩ at 76 K and 0.21 mΩ at 4 K. We have observed a strong correlation between the Rs of the samples and the in-plane mosaic spread of the YBCO films. This correlation can be explained qualitatively in terms of a simple model in which the weak links between the grains of the YBCO film form an electrical network of Josephson junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117052
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial growth of highly conductive RuO2 thin films on (100) Si (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1069-1071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductive RuO2 thin films have been heteroepitaxially grown by pulsed laser deposition on Si substrates with yttria-stabilized zirconia (YSZ) buffer layers. The RuO2 thin films deposited under optimized processing conditions are a-axis oriented normal to the Si substrate surface with a high degree of in-plane alignment with the major axes of the (100) Si substrate. Cross-sectional transmission electron microscopy analysis on the RuO2/YSZ/Si multilayer shows an atomically sharp interface between the RuO2 and the YSZ. Electrical measurements show that the crystalline RuO2 thin films are metallic over a temperature range from 4.2 to 300 K and are highly conductive with a room-temperature resistivity of 37±2 μΩ cm. The residual resistance ratio (R300 K/R4.2 K) above 5 for our RuO2 thin films is the highest ever reported for such films on Si substrates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115715
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