ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The pad is one of the key factors in the chemical-mechanical planarization (CMP) process.To ensure the machining capability and the quality of workpieces, the pad must be conditioned in theprocess. It will cause the pad thiner, and be replaced by a new one for losing the machining capabilityfinally. For this reason, a new method of CMP by using the continuous composite electroplating onthe polishing disc is introduced. In this process, the machining ability of the pad can be ensured due tothe continuous Sn-SiO2 composite electroplating. The effect of cathode current density and time ofplating on the characteristics of composite coating and silica wafer are investigated. The experimentindicates that the continuous composite electroplating polishing (CCEP) is an efficiency method forpolishing silicon wafer, and the surface roughness of the silicon wafer is 0.005μm
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/51/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.315-316.289.pdf
