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A study of initial transient phenomena in the chemical vapor deposition process using silane plasma (1987)

Nakayama, Yoshikazu ; Ohtsuchi, Tetsuro ; Kawamura, Takao

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 62 (1987), S. 1022-1028

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Initial transient phenomena in the plasma deposition of hydrogenated amorphous silicon (a-Si:H) film from SiH4 has been studied in terms of an origin and an influence on the device fabrication. The initial transient state (ITS) of plasma over the time ranging from 2 to 40 s is observed as variations of optical emission intensities from SiH and H rather than as double probe currents. A simple model shows that this is caused mainly by the variation of the SiH4 concentration at relatively high rf power as well as at a low SiH4 flow rate. The variation of electron energy distribution is also discussed as a dominant origin at low rf power and high SiH4 flow rate. The predischarge method by which the SiH4 concentration is controlled just before a main discharge is proposed in order to reduce the ITS. A strong influence of the ITS on the field-effect response of the thin-film transistor is observed and can be avoided by the predischarge method.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.339758

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