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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 10509-10513 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The effect of residual solvent on the carrier transport in poly(methylphenylsilane) films which were formed from toluene and tetrahydrofuran solutions and dried in different conditions has been investigated by a time-of-flight technique. The dependence of hole drift mobility on the electric field and temperature has been analyzed in a framework of the superimposed disorder and polaron effect. It is found that no parameter but the polaron binding energy has a strong relation with an amount of the residual solvent. The polaron binding energies of 0∼126 meV in addition to the native polaron binding energy of 80 meV for polysilane are discussed as solvent-related values. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1120-1125 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of the photocurrent multiplication for both polarities of an applied voltage (two-way) observed in a simple structure of SnO2/amorphous silicon carbide/Au has been explained by a model based on electron tunneling through the Schottky barriers. Photoholes trapped in the depletion layers at the electrodes of SnO2 and Au induce tunneling by enhancing the electric field applied to the barriers. The model has been in qualitative agreement with electrical properties measured in the steady state and transient state. The dark current at high applied voltages shows Fowler–Nordheim type conduction. The dependence of the steady-state photocurrent on temperature and light intensity indicates that the photocurrent is controlled by electron injection rather than by trap-controlled recombination in the bulk. The rise and decay properties in the transient photocurrent indicate that the trapping and detrapping rates of photoholes in the depletion layers depend on the light intensity and applied voltage but not on temperature. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4971-4977 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) of hydrogenated amorphous carbon nitride films and its behaviors due to ultraviolet (UV) light irradiation and thermal annealing have been investigated. The films were produced using an electron cyclotron resonance plasma with various mixtures of N2 and CH4 gases. The broad PL spectra centered around 2.3 eV have been observed in air at room temperature and the PL intensity is inversely proportional to the concentration of nitrogen in the film. The UV irradiation results in the modification of configuration and increase of the PL intensity. Moreover, a new luminescence center around 2.76 eV occurs in the film with higher nitrogen content. The changes in film properties due to UV irradiation correlate with the incorporation of nitrogen in the film. Different from the effects of UV irradiation, thermal annealing promotes graphitization of the film. The PL intensity decreases with red shift as annealing temperature increases and is completely quenched when the temperature is over 400 °C. The changes of PL spectra are discussed on the basis of a model in which the sp2 clusters are considered as luminescence centers. © 1999 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 768-773 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photobleaching process has been studied systematically in poly(methylphenylsilane) thin films with thickness comparable to or less than the penetration depth of incident ultraviolet light. It is found out that the photoscission of σ bonds proceeds from longer segments of Si chains to shorter segments, which has been overlooked in an analysis of the photobleaching process so far. Taking into account this phenomenon and its temperature dependence, a thermally assisted photoscission model is proposed. In the model the activation energy cursive-epsilon has a distribution combining two exponential functions of exp(cursive-epsilon/cursive-epsilon1) in a low energy region and exp(−cursive-epsilon/cursive-epsilon2) in a high energy region with the transition energy cursive-epsilonT separating the two. The shape of the energy distribution is independent of the length of segments and the photoscission cross section Cr is larger for longer segments. The analysis based on this model is fairly consistent with the experimental results. The parameters of cursive-epsilon1, cursive-epsilon2, cursive-epsilonT and Cr are confirmed to be 38 meV, 31 meV, 73 meV, and 5.0×10−17–1.3×10−16 cm2, respectively. The photodegradation of the photoluminescence from the thin films is also well explained on the basis of the proposed model. © 1999 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2904-2908 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous hydrogenated carbon nitride films are deposited both on the cathode and anode in N2–CH4 atmosphere by radiofrequency plasma chemical vapor deposition. The species of the plasma are detected by optical emission spectroscopy and ionization-threshold mass spectroscopy. The effects of varying the N2 partial pressure on plasma states and film properties have been investigated. The results of plasma diagnosis indicate that reactive nitrogen radicals are more easily generated than methane-derived radicals and they increase as the N2 partial pressure in plasma. The films grown on the cathode and anode definitely show different properties. It seems that CN and CNH species in plasma do not contribute to film growth directly. The efficient bombardment of nitrogen ions on growing surface leads to the formation of the film which has lower hydrogen content and more CN bond constructions. © 1999 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1022-1028 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Initial transient phenomena in the plasma deposition of hydrogenated amorphous silicon (a-Si:H) film from SiH4 has been studied in terms of an origin and an influence on the device fabrication. The initial transient state (ITS) of plasma over the time ranging from 2 to 40 s is observed as variations of optical emission intensities from SiH and H rather than as double probe currents. A simple model shows that this is caused mainly by the variation of the SiH4 concentration at relatively high rf power as well as at a low SiH4 flow rate. The variation of electron energy distribution is also discussed as a dominant origin at low rf power and high SiH4 flow rate. The predischarge method by which the SiH4 concentration is controlled just before a main discharge is proposed in order to reduce the ITS. A strong influence of the ITS on the field-effect response of the thin-film transistor is observed and can be avoided by the predischarge method.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 4061-4063 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a controlled process to make carbon-nanotube tips for scanning probe microscopes. The process consists of three steps: (1) purification and alignment of carbon nanotubes using electrophoresis, (2) transfer of a single aligned nanotube onto a conventional Si tip under the view of a scanning electron microscope, and (3) attachment of the nanotube on the Si tip by carbon deposition. Nanotube tips fabricated using this procedure exhibit strong adhesion and are mechanically robust. Finally, the performance of these tips is demonstrated by imaging the fine structure of twinned deoxyribonucleic acid with tapping-mode atomic force microscopy in air. © 1999 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1691-1693 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed nanotweezers consisting of carbon nanotubes that will operate in an atomic force microscope. The two nanotubes were attached on the metal electrodes patterned on a conventional Si tip and their fixations were made by carbon deposition. These processes were made under the view of a scanning electron microscope. The application of a dc voltage to the two nanotube arms induces their movement to approach each other. The numerical simulation by taking into account the balance between the electrostatic attraction and the bending moment of the nanotubes well explains the motion of the nanotube arms. © 2001 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 638-640 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed an anomalous temperature effect for poly(cyclohexylmethylsilane) (PHMS) in a systematic study on formation of electrically oriented polysilane films by casting on interdigital electrodes to which a dc voltage is applied. The orientation of PHMS is quite sensitive to the process temperature: polysilanes align well along the electric field at 14 °C but do not at temperatures higher than 15 °C or lower than 11 °C. It is also shown that the degree of orientation of polysilanes in the films reflects to the electric conduction. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3652-3655 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here an effective reduction of photoscission of σ bonds in polysilanes by C60 doping. The temporal variation of photoluminescence in polysilanes has been measured as a function of a doping amount of C60. The results indicate that the photoscission of σ bonds is related to a photogenerated electron-hole pair rather than a hole or an electron. The energy released when the electron-hole pair recombines nonradiatively is more likely required in addition to the thermal energy to scissor σ bonds. The C60 doping does not affect the activation energy of the photoscission process but decreases the photoscission cross-section. It is also demonstrated that the photoluminescence quenching by the C60 doping is observed for polysilanes not only with aromatic side groups but also with saturated hydrocarbon side groups. © 1998 American Institute of Physics.
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