Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 1992-1994
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The photocurrent multiplication reaching 300 times was recently observed in amorphous silicon carbide (a-SiC:H) films using a simple cell configuration of SnO2/a-SiC:H/Au. This phenomenon, which appeared only under the irradiation of bulk-absorbed red light, is not due to Avalanche effects, but is thought to result from electron tunneling from SnO2 to a-SiC:H film through a thin insulating thin silicon oxide layer formed at the a-SiC:H/SnO2 interface in a high electric field built up by the photoaccumulated space charges of trapped holes near the interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106160
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