Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 111-113
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The formation mechanism of misfit dislocations in lattice-mismatched InxGa1−xAs epilayers (0.2≤x≤1) grown on GaAs substrates has been investigated experimentally. The results suggest that 1/3〈111〉 Frank partial dislocations are grown-in at island edges in highly lattice-mismatched epilayers (x≥0.4). Then after further island growth 90° Shockley partial dislocations are nucleated to remove the stacking faults, reacting with the Frank partials to form complete 90° dislocations. An atomic model is proposed to explain the formation mechanism of the Frank partial dislocation. This model could explain the observed change in the dominant type of dislocation from the 60° at small mismatches to 90° edge dislocations at large lattice mismatches. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116773
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