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  • 1
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 on InAs substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1242-1244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 were grown lattice matched on (100) InAs substrates by molecular beam epitaxy. The material was characterized by x-ray diffraction, 4 K photoluminescence, and capacitance-voltage measurement techniques. At 300 K, background acceptor concentrations of 1.8×1015 and 1.4×1016 cm−3 were determined for the unintentionally doped AlAsSb and AlGaAsSb epitaxial layers, respectively. Compensating the AlAsSb and AlGaAsSb epitaxial layers with sulfur doping resulted in high-resistivity material with an effective donor concentration of about 1014 and 1015 cm−3, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102526
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of energy-band dispersion curves in strained-layer structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2227-2229 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simultaneous measurement of both the conduction- and valence-band dispersion curves in single strained-layer structures is presented. These measurements rely on the application of recent observations regarding breaking of the usual selection rules for interband magnetoluminescence transitions in modulation-doped structures. Low-temperature magneto-luminescence data for three representative InGaAs/GaAs n-type single-strained quantum well structures are presented. For energies approaching 50 meV above the band gap, we find that the conduction band is parabolic with an effective mass of 0.071m0. Over the same energy range, the valence bands are highly nonparabolic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101367
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  • 3
    Electronic Resource
    Electronic Resource
    Anisotropic thermionic emission of electrons contained in GaAs/AlAs floating gate device structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1226-1228 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermionic emission rates are reported for electrons in GaAs epilayers, where electrostatic barriers within the layers and GaAs/AlAs heterojunctions form different sides of the potential well. Attempt times at the two barrier types were observed to differ by factors above 107 due to differing constraints on momentum conservation during emission. These emissions represent escape mechanisms for charge stored in a closed geometry, III-V compound floating gate transistor, with potential application as dynamic random access or nonvolatile memories.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101662
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  • 4
    Electronic Resource
    Electronic Resource
    Parallel quantum point contacts fabricated with independently biased gates and a submicrometer airbridge post (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2326-2328 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an integrated airbridge and submicrometer gate post technology, coupled quantum point contacts (QPCs) arranged in a parallel configuration were fabricated. The airbridge and gate post are fabricated by e-beam lithography and Ti/Au evaporation in a single step. Gate post diameters as small as 0.1 μm have been achieved. The two QPCs are fabricated with two conventional gates and a central airbridged gate, each of which can be biased independently. Conductance measurements clearly exhibit coupling of the two QPCs, as the quantized conductance steps are in units of 4 e2/h. Independent measurements of each QPC show conductance steps in units of 2 e2/h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112731
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  • 5
    Electronic Resource
    Electronic Resource
    p-type ion-implantation doping of Al0.75Ga0.25Sb with Be, C, Mg, and Zn (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1365-1370 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-type ion-implantation doping of Al0.75Ga0.25Sb is reported. The surface morphology and electrical properties of Al0.75Ga0.25Sb are shown by atomic force microscopy and Hall measurements to be degraded after rapid thermal annealing of 650 °C. Implantation of Be and Mg results in sheet hole concentrations twice that of the implanted acceptor dose of 1×1013 cm−2 following a 600 °C anneal. This is explained in terms of double acceptor or antisite defect formation. Implanted C acts as an acceptor but also demonstrates excess hole conduction attributed to implantation-induced defects. Implanted Zn requires higher annealing temperatures than Be and Mg to achieve 100% effective activation for a dose of 1×1013 cm−2 probably as a result of more implantation-induced damage created from the heavier Zn ion. Secondary ion mass spectroscopy of as-implanted and annealed Be, Mg, and C samples are presented. Diffusion of implanted Be (5×1013 cm−2, 45 keV) is shown to have an inverse dependence on temperature that is attributed to a substitutional-interstitial diffusion mechanism. Implanted Mg (1×1014 cm−2, 110 keV) shows dramatic redistribution and loss at the surface of up to 56% after a 600 °C anneal. Implanted C (2.5×1014 cm−2, 70 keV) displays no redistribution even after a 650 °C anneal. This work lays the foundation for using ion-implantation doping in high performance AlGaSb/InGaSb-based p-channel field-effect transistors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361034
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of thin AlGaAs/InGaAs/GaAs quantum-well structures bonded directly to SiO2/Si and glass substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 459-462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained GaAs/InGaAs/AlGaAs quantum-well structures grown on GaAs have been removed from their original substrates by a lift-off process and bonded directly to glass or SiO2-coated Si substrates. Both undoped and modulation-doped structures have been characterized before and after transfer by Hall measurements, variable temperature x-ray diffraction, and photoluminescence. The bonded structures retain the high quality of the as-grown layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343850
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  • 7
    Electronic Resource
    Electronic Resource
    Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3391-3393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present theoretical and experimental results for the temperature dependence of threshold current in an InGaAsN/GaAs vertical-cavity surface-emitting laser (VCSEL) operating at 1.3 μm under continuous-wave current injection. Using a microscopic many-body laser theory, good agreement with experimental data is obtained. The influence of radiative and nonradiative recombination processes on the threshold current–density is investigated theoretically. Also, comparison to a GaAs/AlGaAs VCSEL emitting at 850 nm is made. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1374484
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  • 8
    Electronic Resource
    Electronic Resource
    Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1379-1381 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To gain insight into the nitrogen-related defects of InGaAsN, nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (1.1 eV band gap) grown by molecular beam epitaxy (MBE). Annealing promotes the formation of In–N bonding, and lateral carrier transport is limited by large scale ((very-much-greater-than)mean free path) material inhomogeneities. Comparing solar cell quantum efficiencies with our earlier results for devices grown by metalorganic chemical vapor deposition (MOCVD), we find significant electron diffusion in the MBE material (reversed from the hole diffusion in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a "universal," nitrogen-related defect. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1453480
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  • 9
    Electronic Resource
    Electronic Resource
    Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3129-3131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate wet thermal oxidation of an AlAsSb layer lattice matched to an InP substrate. Oxidation in an InGaAs/AlAsSb/InGaAs structure proceeds in a lateral direction, producing an oxide layer embedded between two layers of InGaAs. Auger analysis and Raman spectroscopy indicate conversion of the AlAsSb into an aluminum oxide with an elemental antimony layer at the top oxide-InGaAs interface. Scanning electron microscope cross-sectional views of partially and fully oxidized samples are also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115800
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3233-3235 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR) grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.78 μm with a maximum reflectivity exceeding 99%. We also measure current–voltage characteristics in a similar 10 1/2 period p-type DBR and find that a current density of 1 kA/cm2 produces a 2.5 V drop. Hole mobilities and doping concentrations in AlAsSb and GaAsSb are also reported. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114882
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