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  • 1
    Electronic Resource
    Electronic Resource
    Structural Relaxation in Metastable Strained-Layer Semiconductors (1989)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 19 (1989), S. 419-437 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.19.080189.002223
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  • 2
    Electronic Resource
    Electronic Resource
    Terrace width evolution during step-flow growth with multiterrace adatom migration (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7351-7357 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a computer-solvable model of step-flow growth that includes both anisotropic multiterrace adatom migration and asymmetric step edge attachment. We find that terrace widths equalize not only when each adatom preferentially attaches to the ascending step edge of the terrace that it lands on, but also when adatoms preferentially migrate over ascending step edges. This latter process can equalize long-range terrace width nonuniformities much more rapidly than can the former process. We also find that a slow lateral movement of terrace width distributions occurs when each adatom adheres to the step edges of the terrace that it lands on. More significantly, we find that a rapid lateral movement of terrace width distributions occurs when adatoms cross multiple step edges. This motion is especially fast when adatoms migrate distances that are comparable to or greater than the terrace width distribution period. We simulated the evolution of an experimentally observed (Al,Ga)Sb lateral superlattice (LSL) terrace width distribution, which led to quantitative estimates of the adatom migration characteristics present during the LSLs growth. At least one type of adatom, probably Ga, migrates nearly isotropically over many terraces. This method of determining adatom migration characteristics can be extended to any material system that allows LSL layers to be grown as terrace width markers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354026
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  • 3
    Electronic Resource
    Electronic Resource
    Reflection mass spectrometry of As incorporation during GaAs molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 288-290 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An apertured and cryoshrouded mass spectrometer, which measures line-of-sight molecular fluxes from the surface, has been incorporated into a GaAs molecular beam epitaxy system. The spectrometer is simple to implement, yet is a powerful real-time growth diagnostic. We have used the spectrometer to measure transient and steady-state As incorporation from As4 during bilayer-by-bilayer growth of GaAs. We find, interestingly, that (1) the incorporation coefficient does not oscillate significantly; (2) transient incorporation coefficients depend on surface reconstruction, and may be higher than 0.5 at high Ga fluxes; and (3) in the absence of a Ga flux, excess Ga on the surface need not imply an incorporation coefficient of 0.5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99916
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray reciprocal-space mapping of strain relaxation and tilting in linearly graded InAlAs buffers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3578-3584 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The extent of relaxation and orientation of linearly graded InxAl1-xAs (x=0.05–0.25) buffers grown on GaAs were examined using a novel x-ray diffraction reciprocal-space mapping technique (kmap). Samples were grown at temperatures ranging from 370 to 550 °C. The fractional relaxation of the buffers grown between 470 and 550 °C was essentially identical (77%) and symmetric in orthogonal 〈110〉 directions. These buffers are believed to be in equilibrium indicating that the incomplete relaxation is not a kinetic effect. The extent of relaxation was less than that expected for equilibrium relaxation in the absence of dislocation–dislocation interactions indicating that such interactions must be considered to accurately predict the extent of relaxation. The saturation of the relaxation as a function of temperature indicates that at the grading rate used (8% In/μm or 0.69% strain/μm), we are not working in a growth regime where the relaxation is nucleation limited. In addition, all the buffers are slightly tilted with respect to the GaAs substrate about [11¯0] toward the [110] direction suggesting either a bias in the dislocation types in the boule-grown GaAs, or a bias in the way in which α and β dislocations interact with unintentional substrate miscuts. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361410
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrogen ion beam smoothening of Ge(001) (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 243-249 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-energy hydrogen ion beams are shown to clean and rapidly smoothen Ge(001) surfaces that have been subjected to severe oxygen roughening. Characteristic smoothening times of 1000 s are found at 500 °C for 200 to 600 eV hydrogen ion beams at fluxes of 200 nA/cm2. By comparing hydrogen and noble gas ion bombardment at various temperatures, we show that the hydrogen ion smoothening effect consists of both physical and chemical mechanisms which act to free pinned surface sites of contaminants and enable subsequent thermal smoothening of the germanium surface. Such oxygen roughened surfaces can be recovered to a state suitable for epitaxial growth without resorting to high-temperature annealing, keV ion sputtering or additional growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347758
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  • 6
    Electronic Resource
    Electronic Resource
    Two semiempirical expressions for condensed-phase heat capacities (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1928-1930 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose two semiempirical expressions for representing condensed-phase heat capacities over a wide temperature range. Both can be integrated analytically to give closed-form expressions for entropies and enthalpies. As examples, we use the expressions to represent the molar heat capacities, entropies, and enthalpies of 〈Si〉 and 〈Al〉.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346588
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  • 7
    Electronic Resource
    Electronic Resource
    Ion range distributions in multilayered structures: Bi in Si/Ge (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 513-520 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bismuth-ion range distributions have been measured in Si/Ge multilayered structures by glancing-angle Rutherford-backscattering spectrometry. The structures were formed by ultrahigh vacuum deposition of various combinations of Si and Ge layers, with thicknesses ranging from 25 to 60 nm, and then implanted with Bi ions at energies ranging from 70 to 385 keV. The measured distributions exhibit, as expected, discontinuities at the Si/Ge interfaces and depend markedly both on the exact sequencing and thicknesses of the layers, as well as on the range-to-layer–thickness ratio. The measured distributions are compared to those calculated by a recently developed approximate method for determining such distributions, the method of equivalent atomic stopping (MEAS). The overall agreement is good and illustrates the usefulness of MEAS in predicting implant distributions in multilayers not yet studied experimentally.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339776
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  • 8
    Electronic Resource
    Electronic Resource
    Excess stress and the stability of strained heterostructures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 848-850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We derive stability criteria for arbitrary strained heterostructures. The criteria are based on evaluating the excess stress as a continuous function of position within a structure for the two well-known Matthews–Blakeslee [J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974)] dislocation mechanisms for strain relief by plastic flow. If the excess stress for either mechanism exceeds zero anywhere within the structure, then the structure is unstable or metastable to strain relief by that mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100091
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  • 9
    Electronic Resource
    Electronic Resource
    Explosive crystallization in amorphous Si initiated by long pulse width laser irradiation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 203-205 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Explosive crystallization of amorphous Si is studied in a new heat-flow regime using long pulse (45 ns full width at half-maximum) ruby laser irradiation. In this regime, previously unobserved phenomena are found. Nucleation of crystalline Si is observed while the amorphous phase is melting at high (m/s) velocity and epitaxy from the underlying crystalline substrate is observed even under conditions for which the amorphous Si is never at any instant fully melted. These measurements, combined with previous measurements using short pulse irradiation, lead to development of a more complete model of explosive crystallization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99519
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  • 10
    Electronic Resource
    Electronic Resource
    Nonconservative formation of 〈100〉 misfit dislocation arrays at In0.2Ga0.8As/GaAs(001) interfaces during post-growth annealing (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2234-2236 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy is applied to investigate the effect of annealing on misfit dislocations in an In0.2Ga0.8As/GaAs(001) heterostructure. In as-grown samples, an orthogonal array of 60° dislocations along 〈110〉 directions is observed in the interface. During annealing, the 60° dislocations along 〈110〉 directions are bent from 〈110〉 directions toward 〈100〉 directions. The process represents a new strain relaxation mechanism in semiconductor heterostructures. As the dislocation segments along 〈100〉 can relieve the strain more effectively than 60° dislocations, we propose that the dislocations move nonconservatively in or near the interface by diffusion along the dislocation cores or in the heterointerface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110537
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