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Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy (2000)

Babinski, Adam ; Siwiec-Matuszyk, J. ; Baranowski, J. M.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 999-1001

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A study of transport and quantum mobility of electrons in two-dimensional electron gas (2DEG) in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well (QW) grown by metalorganic vapor phase epitaxy is presented. Well-resolved Shubnikov–de Haas oscillations of the magnetoresistivity observed at T=4.2 K suggest that the 2DEG with high electron mobility (μt(approximate)46 000 cm2/V s) formed in the QW with no significant parallel conduction. A persistent photoconductivity effect resulted in an increase in electron sheet density. An increase of transport and quantum mobilities up to the onset of the second subband occupancy was observed. Further illumination resulted in a decrease of both mobilities. Strong dependence of the quantum mobility on the thermal history of the investigated sample was attributed to the effect of actual distribution of ionized centers in the sample. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1289035

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