Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
91 (2002), S. 753-756
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have shown how various parasitic phenomena can influence electrical properties of low dimensional CdTe/Cd1−xMgxTe heterostructures, and how they can be minimized or even eliminated. We have found that: (1) a parallel conduction caused by spontaneous formation of a potential valley in the region of the doping with iodine donors is eliminated if a spacer separating QW from the doping region is not thicker than 20 nm and the quantum well depth is greater than about 240 meV; (2) the cap layer at least 150 nm wide protects free electrons in the quantum well and/or the doping layer from trapping by surface defects; (3) the use of thick buffer layer between the substrate and the structure leads to a significant improvement of the sample stability under hydrostatic pressure making a degradation process, observed even without pressure, much less essential than in samples with thin buffer layers. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1426233
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