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  • 1
    Electronic Resource
    Electronic Resource
    General behavior of the In/GaAs couple under prolonged sintering (1995)
    Springer
    Applied physics 60 (1995), S. 321-324 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 73.40.Ns
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The effects of interaction between a thick In layer and heat-treated GaAs at 570 °C are studied with Scanning Electron Microscopy (SEM), Secondary Ion Mass Spectrometry (SIMS), Rutherford Backscattering Spectrometry (RBS), X-Ray Diffraction (XRD) and Nomarski microscopy. It is shown that, besides the well-known InGaAs crystallites which epitaxially grow upon dissolution of the substrate, an array of In-rich dendrites is observed whose density correlates with the density of the crystal dislocations. The driving force for In to protrude along the dislocations to eventually form In(Ga)As spikes is apparently excess arsenic reported to be present in the vicinity of the individual dislocations. It is postulated that the existing data concerning the coefficient of classical diffusion of In in GaAs may be overestimated by a factor of 106.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538412
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  • 2
    Electronic Resource
    Electronic Resource
    Fine structure of EL2 defect absorption in GaAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2558-2559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution measurements of the zero phonon line (ZPL) of the EL2 intracenter absorption were performed. Several samples, both Czochralski and Bridgman grown, have been examined. The shape and position of the ZPL were virtually identical for all the samples. No splitting of the ZPL was detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100207
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  • 3
    Electronic Resource
    Electronic Resource
    π-bonded model of an oxygen-vacancy center in SiO2 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2904-2909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tight-binding total energy calculations of the two possible states of the neutral oxygen-vacancy center in SiO2 have been performed within the bond orbital approximation. It has been shown that the lowest energy state is realized by a transfer of one electron from a nonbonding p oxygen orbital (next to the vacancy) into an opposite silicon dangling hybrid, and then by the formation of a π bond between the remaining oxygen p electron and the nearest silicon dangling hybrid. The new π-bonded model of the oxygen-vacancy center is discussed and the results obtained are compared with experimental data. The most important aspect of this work is the demonstration that for defects in SiO2, the π interactions are very important and should not be neglected in describing the physics of many problems in SiO2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337835
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  • 4
    Electronic Resource
    Electronic Resource
    Electroreflectance bias-wavelength mapping of the modulation Si δ-doped pseudomorphic GaAs/InGaAs/AlGaAs structure (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2088-2090 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroreflectance bias-wavelength mapping is proposed as a tool for characterization of low-dimensional structures. The results of room-temperature measurements on modulation Si δ-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure with high mobility two-dimensional electron gas are presented. Franz–Keldysh oscillations (FKO) in GaAs layer are analyzed using fast Fourier transform (FFT) mapping in order to find an electric field in the GaAs layer. Two frequencies of FKO are identified in the FFT spectra, which are attributed to transitions involving heavy and light holes. Two transitions within the InGaAs quantum well are found at zero bias and an additional transition becomes apparent in reversely biased structure. Spectral features due to spin-orbit split holes in GaAs, back AlGaAs barrier, and AlGaAs/GaAs superlattice are also identified. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124925
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  • 5
    Electronic Resource
    Electronic Resource
    Electroluminescence from a forward-biased Schottky barrier diode on modulation Si δ-doped GaAs/InGaAs/AlGaAs heterostructure (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3992-3994 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescence (EL) from a forward-biased Schottky barrier diode on modulation Si δ-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure with high mobility electron gas is investigated in this work. It has been found that the EL from the InGaAs quantum well can be observed at temperatures up to 90 K. The EL line shape depends on the current density, which reflects the filling of the InGaAs channel with electrons. The total integrated EL intensity depends linearly on the current density. We propose that hole diffusion from an inversion layer at the Schottky barrier is responsible for the observed optical recombination with electrons in the InGaAs quantum well. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380397
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  • 6
    Electronic Resource
    Electronic Resource
    Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 999-1001 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of transport and quantum mobility of electrons in two-dimensional electron gas (2DEG) in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well (QW) grown by metalorganic vapor phase epitaxy is presented. Well-resolved Shubnikov–de Haas oscillations of the magnetoresistivity observed at T=4.2 K suggest that the 2DEG with high electron mobility (μt(approximate)46 000 cm2/V s) formed in the QW with no significant parallel conduction. A persistent photoconductivity effect resulted in an increase in electron sheet density. An increase of transport and quantum mobilities up to the onset of the second subband occupancy was observed. Further illumination resulted in a decrease of both mobilities. Strong dependence of the quantum mobility on the thermal history of the investigated sample was attributed to the effect of actual distribution of ionized centers in the sample. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289035
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  • 7
    Electronic Resource
    Electronic Resource
    Electron effective mass in hexagonal GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4154-4155 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Far-infrared magneto-optical investigations of shallow donors in epitaxial GaN layers on sapphire were carried out by means of Fourier transform spectrometry up to 23 T. From the splitting of the donor p states in a magnetic field, the cyclotron effective mass for conduction electrons was found to be m*=0.222 m0. A precise determination of the mass was made possible by the high quality of the spectra and by taking into account high magnetic field data above 12 T. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125567
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  • 8
    Electronic Resource
    Electronic Resource
    Lattice parameters of gallium nitride (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 73-75 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice parameters of gallium nitride were measured using high-resolution x-ray diffraction. The following samples were examined: (i) single crystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers, (iii) heteroepitaxial layers (wurtzite structure) on silicon carbide, on sapphire, and on gallium arsenide, (iv) cubic gallium nitride layers on gallium arsenide. The differences between the samples are discussed in terms of their concentrations of free electrons and structural defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118123
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  • 9
    Electronic Resource
    Electronic Resource
    Exciton region reflectance of homoepitaxial GaN layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 788-790 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection measurements in the exciton region of GaN homoepitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on GaN single crystals are reported. At low temperature (4.2 K) three free exciton lines have been found with energies; EA=3.4776 eV, EB=3.4827 eV, and EC=3.502 eV. The spin-orbit parameter Δso=19.7±1.5 meV and the crystal field parameter Δcr=9.3±0.3 meV have been obtained. From temperature dependence of exciton spectra the energy gap dependence has been found: E(T)=E(0)−λ/[exp(β/T)−1] (λ=0.121 eV, β=316 K). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117892
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  • 10
    Electronic Resource
    Electronic Resource
    General behavior of the In/GaAs couple under prolonged sintering (1995)
    Springer
    Applied physics 60 (1995), S. 321-324 
    Details
    ISSN: 1432-0630
    Keywords: 73.40.Ns
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effects of interaction between a thick In layer and heat-treated GaAs at 570°C are studied with Scanning Electron Microscopy (SEM), Secondary Ion Mass Spectrometry (SIMS), Rutherford Backscattering Spectrometry (RBS), X-Ray Diffraction (XRD) and Nomarski microscopy. It is shown that, besides the well-known InGaAs crystallites which epitaxially grow upon dissolution of the substrate, an array of In-rich dendrites is observed whose density correlates with the density of the crystal dislocations. The driving force for In to protrude along the dislocations to eventually form In(Ga)As spikes is apparently excess arsenic reported to be present in the vicinity of the individual dislocations. It is postulated that the existing data concerning the coefficient of classical diffusion of In in GaAs may be overestimated by a factor of 106.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538412
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