ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract P-type copper indoselenide (CulnSe2) thin films were vacuum-deposited on glass substrates by a single-source thermal evaporation technique under different conditions of preparation. The structural properties of the films were investigated by X-ray diffraction and transmission electron microscopy and diffraction techniques. The dark resistivity of the deposited films was investigated as a function of film thickness, deposition rate and substrate temperature. The conductivity activation energy ranges from 0.851 to 1.01 eV depending on the deposition rate. Single-phase and stoichiometric CulnSe2 films could be deposited at low deposition rates (less than 4 nms−1). Higher deposition rates led to multiphase films containing InSe, ln2Se3, CuSe and Cu3Se2 in addition to CulnSe2.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00542908
