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Effect of some growth parameters on vacuum-deposited CulnSe2 films

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Abstract

P-type copper indoselenide (CulnSe2) thin films were vacuum-deposited on glass substrates by a single-source thermal evaporation technique under different conditions of preparation. The structural properties of the films were investigated by X-ray diffraction and transmission electron microscopy and diffraction techniques. The dark resistivity of the deposited films was investigated as a function of film thickness, deposition rate and substrate temperature. The conductivity activation energy ranges from 0.851 to 1.01 eV depending on the deposition rate. Single-phase and stoichiometric CulnSe2 films could be deposited at low deposition rates (less than 4 nms−1). Higher deposition rates led to multiphase films containing InSe, ln2Se3, CuSe and Cu3Se2 in addition to CulnSe2.

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Authors and Affiliations

  1. Faculty of Education, Ain Shams University, Heliopolis, Cairo, Egypt

    M. M. El-Nahass & H. S. Soliman

  2. Girls' College of Education, Jeddah, Saudi Arabia

    D. A. Hendi

  3. Physics Department, National Research Centre, Dokki, Cairo, Egypt

    Kh. A. Mady

Authors
  1. M. M. El-Nahass
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  2. H. S. Soliman
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  3. D. A. Hendi
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  4. Kh. A. Mady
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El-Nahass, M.M., Soliman, H.S., Hendi, D.A. et al. Effect of some growth parameters on vacuum-deposited CulnSe2 films. J Mater Sci 27, 1484–1490 (1992). https://doi.org/10.1007/BF00542908

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  • DOI: https://doi.org/10.1007/BF00542908

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