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  • 1
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 3 (1992), S. 232-236 
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The structural properties of the 50 mol% Ga2Se3-50 mol% Ga2S3 system in thin-film form were studied using an X-ray diffraction technique. As-deposited films had an amorphous nature, whereas films heat treated for 2 h at 400 °C in a vacuum of 10−2 Pa had a single-phase (cubic) polycrystalline nature with lattice constanta=0.532 nm. The optical properties of Ga2Se3-Ga2S3 thin films as-deposited and as-heat treated were also studied. It was found that heat treatment strongly affects the optical constants as well as the energy gap, which can be attributed to compositional as well as structural changes.
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 5 (1994), S. 248-254 
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract CdGa2Se4 thin films were prepared by vapour deposition onto either room temperature or preheated quartz and glass substrates (T S) or they were deposited at room temperature and then annealed at about (T A) 623 K. The films thus prepared were crystalline with a thiogallate tetragonal structure. The optical constants (the refractive index n and the absorption index, k) were determined for CdGa2Se4 films deposited onto quartz substrates held at either room temperature or at T S = 573 K. These constants were also determined for preannealed films (T A = 623 K). Plots of (αhv)2 = f(hv) and (αhv)1/2 = g(hv) were linear, indicating the existence of both direct and indirect optical transitions. It was found that the values of E g d and E g ind for as-deposited CdGa2Se4 films were 2.46 and 1.91 eV, respectively. The corresponding values for the annealed films and the films deposited at T S = 573 K were 2.56 and 2.06 eV, respectively.
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 7 (1996), S. 233-239 
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Seven Cd x Zn(1 − x Te solid solutions with x = 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 and 1.0 were synthesized by fusing stoichiometric amounts of CdTe and ZnTe constituents in silica tubes. Each composition was used in the preparation of a group of thin films of different thicknesses. Structural investigation of the obtained films indicates they have a polycrystalline structure with predominant diffraction lines corresponding to (111) (220) and (311) reflecting planes, which can be attributed to the characteristics of growth with the (111) plane. The optical constants (the refractive index n, the absorption index k, and the absorption coefficient α) of Cd x Zn(1 \s -x) Te thin films were determined in the spectral range 500–2000 nm. At certain wavelengths it was found that the refractive index, n, increases with increasing molar fraction, x. It was also found that plots of α2 (hv) and α1/2 (hv) yield straight lines, corresponding to direct and indirect allowed transitions respectively obeying the following two equations: $$\begin{gathered} E_g^d = 1.583 + 0.277x + 0.197x^2 \hfill \\ E_g^{ind} = 1.281 + 0.111x + 0.302x^2 \hfill \\ \end{gathered}$$
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 7 (1988), S. 1116-1118 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 7 (1988), S. 633-636 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 61 (1995), S. 87-92 
    ISSN: 1432-0630
    Keywords: 78.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract X-ray diffraction and electron diffraction techniques indicate that Cdx Zn1−xSe thin films on glass substrates have a polycrystalline nature, with sphalerite structure for x≤0.5 and wurtzite structure for x≥0.6. The crystalline size in each composition increases with increasing the film thickness. The room temperature dark resistivity π varies from one composition to another showing a transition at x=0.55 The temperature dependence of π of the deposited films revealed two conduction mechanisms, one below 352 K due to shallow levels, surface states, and defects introduced during the film growth, and over 352 K due to deep-level ionization following the ordinary semiconducting behaviour. The thermal activation energy of the free charge carriers decreases linearly with increasing the molar fraction x of the CdSe content up to x=0.55, above which it increases with increasing x. The optical constants of Cdx Zn1−xSe thin films of different compositions were determined in the spectral range 400–2000 nm. The analysis of the absorption coefticient at and near the absorption edge indicates the existence of allowed direct transition energy gaps decreasing with increasing x.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 61 (1995), S. 87-92 
    ISSN: 1432-0630
    Keywords: PACS: 78.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. X-ray diffraction and electron diffraction techniques indicate that Cd x Zn 1-x Se thin films on glass substrates have a polycrystalline nature, with sphalerite structure for x≤0.5 and wurtzite structure for x≥0.6. The crystalline size in each composition increases with increasing the film thickness. The room temperature dark resistivity ρ varies from one composition to another showing a transition at x=0.55 The temperature dependence of ρ of the deposited films revealed two conduction mechanisms, one below 352 K due to shallow levels, surface states, and defects introduced during the film growth, and over 352 K due to deep-level ionization following the ordinary semiconducting behaviour. The thermal activation energy of the free charge carriers decreases linearly with increasing the molar fraction x of the CdSe content up to x=0.55, above which it increases with increasing x. The optical constants of Cd x Zn 1-x Se thin films of different compositions were determined in the spectral range 400–2000 nm. The analysis of the absorption coefficient at and near the absorption edge indicates the existence of allowed direct transition energy gaps decreasing with increasing x.
    Type of Medium: Electronic Resource
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