ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
GaInAsP/InP double heterostructures grown by chemical-beam epitaxy have been used in conjunction with liquid-phase-epitaxial regrowth to fabricate high-performance buried heterostructure lasers operating at a wavelength of 1.5 μm. These lasers show room-temperature threshold currents as low as 12 mA, external quantum efficiencies as high as 0.2 mW/mA per facet, and, in general, linear output power up to ∼10 mW/facet. The 3-dB bandwidth at optimal biasing is about 8 GHz and is believed to be limited by the heatsink stud. The relative intensity noise is low, 〈−150 dB/Hz at 1 GHz for bias currents from 50 mA to above 150 mA.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339984