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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 388-390 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of photoconductivity in semiconductor heterojunctions has been observed. The structures are InP/In0.47Ga0.53As forward-biased multiquantum-well p-n junctions grown by chemical-beam epitaxy. This phenomenon manifests itself in a photocurrent proportional to the dark differential conductance. This effect is associated with the partial screening of the electric field in the wells induced, at constant bias, by photogenerated carriers in the wells. The resulting increase of the field in the barriers leads to enhanced injection and photocurrent gain.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3324-3327 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electrical measurements on structures generated by δ doping the AlGaAs barriers of a GaAs quantum well. These structures are made unique by quantum size effects that occur both in the δ-doped barrier and in the GaAs well. Both the Hall-effect and capacitance-voltage measurements reveal that high-density, 4×1012 cm−2, two-dimensional electron gas forms in the well along with good mobility. We fabricate field-effect transistors with this structure to obtain transconductances of 300 mS/mm.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 913-915 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the determination of Auger recombination coefficients in bulk and quantum well InGaAs by time-resolved luminescence measurements. In bulk InGaAs the coefficient is C=3.2×10−28 cm6/s and has the temperature dependence of the valence-band Auger effect involving the split-off valence band. In 11 nm quantum well InGaAs we find C=0.9×10−28 cm6/s, independent of temperature. The Auger coefficient decreases slightly with decreasing well width.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2336-2338 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared Fe-doped InP epilayers by chemical beam epitaxy using a thermal atomic Fe beam. Epilayers having high resistivities ((approximately-greater-than)107 Ω cm) were obtained over a wide range of Fe concentrations. Resistivities as high as 1.3×108 Ω cm have been obtained. Such resistivity is almost equal to the theoretical value of 1.37×108 Ω cm that we estimate for intrinsic InP. The current-voltage characteristics exhibit both an ohmic and a space-charge-limited regime, and are consistent with the theory of single-carrier injection into a trap-free insulator. Pinning of the Fermi level near midgap by Fe-related deep levels is the mechanism by which the epilayer is made highly resistive. At room temperature, these traps are apparently deep enough that the carrier emission rate is negligible.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1771-1773 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and demonstrate a negative differential resistance transistor—the quantum-switched heterojunction bipolar transistor (QSHBT). It has the highest current peak-to-valley ratio ever reported at room temperature (15 in an InGaAs/InP QSHBT). More important, the switching and peak-to-valley ratio can be controlled by a base current injected electronically or optically. For example, a peak current as high as 72 mA or 2.9 kA/cm2 can be controlled by either a few microamperes of base current or a few microwatts of optical signal. A gain of peak current of 8650 at room temperature is obtained. The present device is grown by chemical beam epitaxy.
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon oxide, SiOx (1≤x≤2), formed by molecular-beam deposition (MBD) has many attractive optical, electrical, mechanical, and chemical properties which make it a suitable dielectric for many semiconductor device applications. It can be thermally evaporated at a much lower temperature than Si, SiO2, or Si3N4 and it condenses on cooler surfaces in uniform and adherent stoichiometric SiO (x=1) films when evaporated in high vacuum. At low deposition rates and at high pressures of oxygen, SiOx (1≤x≤2) films result. This allows variation of refractive index, stress, and other properties with x. MBD-SiOx films are insensitive to moisture absorption. A high quality thin film of SiO2 formed on the surface of SiOx, when exposed to an oxidizing ambient, protects the SiOx film underneath from the environment. Dielectric breakdown strength of the SiO films is comparable to that of other high quality deposited dielectrics. In general, the SiO (x=1) films are under tensile stress of 〈100 MPa, which is significantly lower than that observed in other dielectric films. Introduction of a small amount of oxygen during deposition reduces the tensile stress; at an O2 pressure of 5×10−7 Torr and above, the films are in compression. This allows the tunability of stress, and deposition of films essentially free from stress. Furthermore, both Si and SiO have similar values of the linear thermal expansion coefficients (average values between 23 and 350 °C: 3.37×10−6 and 2.7×10−6 °C−1, respectively). As a result, SiOx/Si films develop little stress during thermal cycling. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 737-739 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new technique using single-mode fibers as spatial filters for probing carrier dynamics such as diffusion and recombination is introduced. Diffusion coefficients of 5.5 and 5 cm2/s are obtained for optically excited electron-hole plasmas in a 1.9-μm-thick In0.6Ga0.4As0.85P0.15 bulk layer and in an In0.53Ga0.47As/InP quantum well sample with well thickness of 100 A(ring), respectively.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1285-1287 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report photoluminescence and transport studies of a very pure GaAs layer grown by gas source molecular beam epitaxy methods. A peak mobility of 300 000 cm2/V s is observed at 60 K. A very shallow donor with binding energy less than 2 meV is observed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 983-985 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that chemical beam epitaxy (CBE) is suitable for growing high quality GaInAs(P)/InP heterostructure bipolar transistors. Step-graded double-heterostructure bipolar transistors with very thin base (150 A(ring)) and very high p doping (∼5×1019 cm−3), and with an added "grading layer'' of 200 A(ring) GaInAsP (Eg =0.94 eV) between the GaInAs/InP base-collector junction, have shown good current drive capability and excellent current gain ( β=2500). In addition, CBE-grown standard single-heterostructure bipolar transistors with a 1000 A(ring) base and 2×1018 cm−3 p doping are characterized by high gain, β∼3500, which is only weakly dependent on the collector current.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 152-154 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an experimental observation of a blue shift in the n=1 heavy-hole exciton line of In0.53Ga0.47As/InP multiple quantum wells resulting from a picosecond photoexcitation in the transparent spectral region. The temporal response of this shift follows the excitation and it is attributed to the optical Stark effect. The shift was measured to be 0.19 meV for an incident light with a photon energy 20 meV below the exciton peak and with a 10-MW/cm2 intensity.
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