ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the doping incorporation and activation of InP growth using metalorganic chemical vapor deposition on 〈100(approximately-greater-than), 〈311(approximately-greater-than)B, and 〈110(approximately-greater-than) InP substrates. Effects of orientation, growth temperature, and V/III fluxes were studied. The dopants used were Zn from dimethylzinc [(CH3)2Zn] and diethylzinc [(C2H5)2Zn], S from hydrogen sulfide [H2S], Si from silane [SiH4], and Sn from tetraethyltin [(C2H5)4Sn]. The incorporation and activation of the p-type dopant Zn are elevated on the 〈311(approximately-greater-than)B and 〈110(approximately-greater-than) planes, while the incorporation is suppressed for the n-type dopants (S, Si, and Sn). The n-type dopant Sn has similar incorporation and activation on the various substrate orientations studied. Anomalous Zn doping on the higher order planes 〈311(approximately-greater-than)B and 〈110(approximately-greater-than) lead to the Zn incorporation exceeding the solubility limit in InP. Incorporated Zn levels as high as 1.0×1019 cm−3 were measured, and the corresponding activated Zn level was as high as 5.4×1018 cm−3 on a 〈110(approximately-greater-than) InP substrate. Interdiffusion of the p-type dopant Zn into the S-doped n-type InP substrate is inhibited by a high S-doping level and segregates at the substrate–epilayer interface. If the S-doping level is lower than the Zn concentration, then Zn diffuses deep into the substrate at a uniform level.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352839
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