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  • 1
    Electronic Resource
    Electronic Resource
    Characteristics of GaAs/AlGaAs heterostructures grown by liquid-phase epitaxy on molecular-beam-coated GaAs on Si (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3201-3204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Liquid-phase epitaxy has been used to grow four-layer GaAs/AlGaAs double heterostructures on Si substrates that had been precoated with GaAs by molecular-beam epitaxy and coating the remaining exposed parts of the Si wafer with SiO2. Direct growth of GaAs on Si by liquid-phase epitaxy is not feasible because of the dissolution of the Si substrate by the Ga melt. As with the other growth techniques, photoluminescence from the GaAs cap layer and electroluminescence from the 0.2-μm-thick GaAs active layer indicate the luminescence peaks are shifted to lower energy as a result of the tensile strain in the plane of the layers that is caused by the different thermal contraction of the GaAS and Si layers as the wafer is cooled from the growth temperature. Optically pumped stimulated emission is observed from the cap layer at 80 K. The efficiency of the electroluminescence from the active layer was low, indicating the p-n junction was displaced from the active layer due to the accidental excess doping resulting from a slight dissolution of the Si substrate in the Ga melt.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341536
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  • 2
    Electronic Resource
    Electronic Resource
    High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 171-172 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate high performance InGaAs/InP heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy. A unity current gain cutoff frequency fT=78 GHz and a maximum oscillation frequency fmax=42 GHz are achieved in transistors with emitter size 2.5×11 μm2. Ring oscillators using nonthreshold logic show a propagation delay of 31 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102133
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  • 3
    Electronic Resource
    Electronic Resource
    Voltage-controlled Q switching of InGaAs/InP single quantum well lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1940-1942 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The light emission characteristics of high performance InGaAs/InP single quantum well laser diodes with a monolithically integrated intracavity loss modulator have been investigated. We demonstrate efficient voltage-controlled tuning of the lasing threshold current over more than one order of magnitude. In addition, active Q switching of 7 mW lasing light power with a change in electrical power of 〈30 μW is achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102171
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  • 4
    Electronic Resource
    Electronic Resource
    GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratings (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2515-2517 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient coupling of long-wavelength infrared (LWIR) radiation to a two-dimensional (2-D) array of GaAs/AlGaAs multiple quantum well detectors is achieved by illumination through chemically etched diffraction gratings. Gratings were fabricated on the back surface of the GaAs substrate as well as selectively on the top contact of the detector mesas. Both top and bottom illumination schemes were employed. In all cases, high coupling efficiency (〉90%) of the gratings was observed as measured by comparing the responsivity to that of an identical detector illuminated through an angle-polished facet. The results demonstrate the feasibility of high-sensitivity GaAs LWIR imagers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101079
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  • 5
    Electronic Resource
    Electronic Resource
    Multielectrode quantum well laser for digital switching (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1095-1097 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multielectrode laser can be used to perform digital logic functions and threshold detection. In addition, the intrinsic gain in these devices allows control of lasing light output without using conventional high-current electrical switches. Device potential is illustrated by demonstrating logical and operation (demultiplexing) at 1.5 Gbit s−1 with a bit error rate of 〈10−11 s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102578
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  • 6
    Electronic Resource
    Electronic Resource
    Atomic ordering in InGaAsP and InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4118-4124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a systematic study of atomic ordering in InGaAsP and InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition. InGaAsP lattice matched to InP, grown in a temperature range of 625–650 °C, reveals atomic ordering on the (111) plane (variant I) and the (11¯1¯) plane (variant II) of the group III sublattice. The extent of atomic ordering increases with decreasing growth temperature and increasing In to Ga ratio. No orderings are observed in InGaAsP grown at 700 °C or in In0.53Ga0.47As lattice matched to InP at all our growth temperatures, in contrast to the commonly believed occurrence of maximum ordering at 1/1 In to Ga ratio. The facts that these conditions differ significantly from the reported conditions for InGaAsP grown by other techniques strongly suggests that the atomic ordering formation is controlled by the surface kinetics and growth environment, i.e., chemistry at the reactive gas-solid surface, fluid dynamics of the reactive gases, and growth temperature, rather than the composition and growth temperature. A fine structure observed in the superspots associated with the atomic ordering in the electron diffraction pattern indicates a possible superlattice structure formed by alternating variant I and variant II ordered layers. Misfit strain as well as sulfur dopant are shown to have no effect on the atomic ordering. Zinc dopant, however, totally eliminates the atomic ordering and shifts the energy band gap to a larger band gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352218
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  • 7
    Electronic Resource
    Electronic Resource
    Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2283-2285 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Record low threshold current densities have been achieved in InGaAs/InGaAsP step graded index sep[AV:arate confinement (GRIN SCH) quantum well lasers emitting close to 1.50 μm. Single (SQW) and multiple (MQW) quantum well lasers with 300–500 μm long cavities had threshold current densities as low as 1.9 and 0.9 kA/cm2, respectively. In longer cavity devices, threshold current densities as low as 750 and 450 A/cm2 have been measured in SQW and MQW lasers, respectively. These lasers show no significant change in threshold current density with well thicknesses varying from 5 to 25 nm which demonstrate the effectiveness of the graded index in the carrier capture process. Buried-heterostructure GRIN SCH SQW and MQW with active layer widths of ∼2 μm show threshold currents of 15 and 9 mA, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102038
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  • 8
    Electronic Resource
    Electronic Resource
    Strained InGaAs/InP quantum well lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1210-1212 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum well lasers based on strained InxGa1−xAs/InP were grown by atmospheric pressure metalorganic vapor phase epitaxy. Buried-heterostructure lasers with the active layer consisting of three quantum wells, each ∼50 A(ring) thick, placed in a continuously graded waveguide, exhibit threshold currents as low as 15 mA, high quantum efficiency (24%), and power output (∼100 mW), independent of composition. Changing the In concentration from x=0.48 to 0.62 results in the lasing wavelength shift from 1.45 to 1.62 μm. These wavelengths are in excellent agreement with the calculated energies of the electron–heavy hole exciton transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102562
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  • 9
    Electronic Resource
    Electronic Resource
    InGaAs/InP graded-index quantum well lasers with nearly ideal static characteristics (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1222-1224 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined static properties of step and continuously graded single and multiple quantum well InGaAs/InP lasers grown by atmospheric pressure metalorganic vapor phase epitaxy. Systematic changes in the band gap of InGaAsP waveguide layers have resulted in lasers with low threshold current (〈10 mA), high quantum efficiency (26% per facet) and power output (∼70 mW), and the effective loss of 2–5 cm−1. We show that the changes in threshold current in short lasers can be explained by a switch from the n=1 to n=2 level. The level switching results in a very flat and wide (〉1000 A(ring)) gain profile.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102521
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  • 10
    Electronic Resource
    Electronic Resource
    Optical transitions in strained In1−xGaxAsyP1−y quantum wells clad by lattice-matched barriers of InGaAsP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1689-1691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We extend the deformation potential model developed previously for InGaAs/InP quantum wells to include strained quaternary wells, under compressive or tensile strain, and lattice-matched (or also strained) quaternary barriers. This requires interpolation of the needed quaternary materials parameters in a plane bound by the four binary parent compounds. The calculated energies of heavy and light hole transitions are compared to measured values obtained on a set of compressively strained multi-quantum-well quaternary structures grown on (100) InP with the lattice mismatch strain Δa/a as large as 0.75%. Our experimental results are in good agreement with the extended model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112887
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