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  • 1
    Electronic Resource
    Electronic Resource
    Phase transformations and vacancy formation energies of transition metals by positron annihilation (1979)
    Springer
    Applied physics 20 (1979), S. 135-140 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 71.60 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The technique of the coincidence count rate at the peak of the angular correlation curve (CCR) in positron annihilation has been applied to the investigation of vacancy formation energies in thermal equilibrium in nickel, cobalt, and iron. The monovacancy formation energyE 1v/F has been determined to (1.55±0.05) eV and (1.34±0.07) eV for nickel and cobalt, and (1.60±0.10) eV for α-iron, and (1.40±0.15) eV for γ-iron, respectively. The structural phase transformations in cobalt (693 K) and iron (1183 K, 1663 K) are exhibited by discontinuities of the CCR. In the case of cobalt the CCR follows exactly the change of the thermal expansion at the transition temperature. The temperature dependence of the CCR in the prevacancy region is found to be proportional to the thermal expansion for all metals investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885934
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  • 2
    Electronic Resource
    Electronic Resource
    Propagation of ultrasonic shear waves in γ-ray irradiated quartz crystals (1977)
    Springer
    Applied physics 13 (1977), S. 171-173 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 62
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultrasonic pulsed-echo patterns in AC-cut quartz crystals cooled to 4.2 K have been studied over the frequency range 0.2〈f〈0.6 [GHz]. The observed beats, superimposed on the exponential decay, have been identified as resulting from diffraction of the waves in the finite-size crystals. Furthermore, it has been found that irradiation with 1 MeV γ-rays yields samples with both a smaller attenuation constant and less pronounced beats. The significance of the reported results lies mainly in the potential application of the procedure of γ-ray irradiation, and subsequent bleaching with ultraviolet light, in order to obtain quartz crystals with improved acoustic patterns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882477
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  • 3
    Electronic Resource
    Electronic Resource
    The influence of intrisic defects on the degradation and luminescence of GaAs and other III–V compounds (1980)
    Springer
    Applied physics 23 (1980), S. 303-309 
    Details
    ISSN: 1432-0630
    Keywords: 42.80 ; 61.70 ; 61.80 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A significant contribution to the degradation of GaAs-based lasers and light-emitting diodes arises from the formation of so-called dark line defects. It is shown that these defects are accumulations of non-radiative recombination centres around dislocations. The centres are identified as As vacancies, which are emitted by climbing dislocations, concomitantly with the absorption of Ga interstitials. From scanning deep-level transient spectroscopy observations it is concluded that the so-called DX centres are Ga interstitials. The driving force for dislocation climb and thus for dark-line-defect formation is a supersaturation of Ga interstitials originating from the growth of the GaAs crystals under Ga-rich conditions as a consequence of the high volatility of As. Phenomena in other III–V compound semiconductors related to the formation of dark line defects in GaAs are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00914916
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  • 4
    Electronic Resource
    Electronic Resource
    Vacancy noise measurements in metals: Calculation of the power spectrum (1983)
    Springer
    Applied physics 30 (1983), S. 117-122 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 72.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Fluctuations in the number of vacancies in metals in thermal equilibrium lead to resistivity fluctuations. Analysis of these fluctuations permits measurement of both formation and migration enthalpy of the vacancies. The power spectrum of the fluctuations is calculated using a series of statistically independent pulses. It can be derived from the diffusion equation for any geometry of the vacancy sinks. Vacancy diffusion to the surface of a thin plate or of a sphere are treated as examples. The measurability of vacancy noise is assessed. It should also be possible to measure vacancy noise during irradiation. It is predicted that correlated vacancy creation, which may occur during irradiation, will cause an increase in the power spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614913
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  • 5
    Electronic Resource
    Electronic Resource
    Vacancy migration energy in quenched Al-Mg0.01 alloy by positron annihilation (1981)
    Springer
    Applied physics 26 (1981), S. 107-113 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The isothermal recovery rates of vacancy-impurity complexes in an aluminium-1% magnesium alloy are measured in situ at eight temperatures from variations of colinear annihilation γ-rays versus time. These data analysed in terms of a time dependant β+-trapping model yield two apparent migration energies of 0.8 eV±0.1 eV and 0.9 eV±0.05 eV. The nature of the complexes is discussed and their binding energy is estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616657
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  • 6
    Electronic Resource
    Electronic Resource
    Proton conductivity in the layer compound H3OUO2AsO4·3H2O (HU As) (1983)
    Springer
    Applied physics 32 (1983), S. 45-53 
    Details
    ISSN: 1432-0630
    Keywords: 66.33 ; 61.70 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The proton conductivity in H3OUO2AsO4·3H2O (HUAs) has been measured below the transition temperature at 299 K. A consistent picture of the elementary process taking place is developed from separate electrochemical, spectroscopic and calorimetric measurements. The conductivity is proposed to occur by the “vehicle mechanism” of proton transport, i.e. the cooperative motion of H3O+ and H2O. This mechanism is compared with the Grotthuss and the simple ion hopping mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617828
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  • 7
    Electronic Resource
    Electronic Resource
    Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurements (1984)
    Springer
    Applied physics 33 (1984), S. 133-140 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.3085.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In- and out-diffusion of gold in silicon were investigated with the aid of a neutronactivation analysis in combination with mechanical sectioning or by the spreadingresistance technique. In-diffusion profiles in the range 1371–1073 K show that Au diffuses in Si mainly via the so-called kick-out mechanism. From the Au diffusion and solubility measurements the interstitialcy contributionD I SD to the Si self-diffusion coefficient was determined, which shows that the self-diffusion occurs to a considerable extent via selfinterstitials. Out-diffusion profiles at 1173 K were measured on wafers homogeneously supersaturated with Au. The observed decrease of the electrical activity of Au in the bulk indicates that during the out-diffusion anneal the majority of Au atoms originally dissolved substitutionally changes its configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617619
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  • 8
    Electronic Resource
    Electronic Resource
    Preparation of Nb3Sn structures on low pinning niobium foils for use in guided flux motion experiments (1982)
    Springer
    Applied physics 27 (1982), S. 167-169 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 68 ; 74
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simple method is presented to prepare very low pinning niobium foils on which geometrically well defined Nb3Sn-pinning structures of arbitrary shape are deposited. This facilitates the fabrication of samples for guided vortex motion experiments some of which are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616668
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  • 9
    Electronic Resource
    Electronic Resource
    TEM image contrast from antiphase domains in GaAs: Ge(001) grown by MBE (1984)
    Springer
    Applied physics 34 (1984), S. 231-236 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Antiphase domains occur in thin GaAs epitaxial films grown on Ge(001) by molecular beam epitaxy. The domains have been imaged by transmission electron microscopy using 200-type reflections in dark field. The carefully chosen imaging conditions with convergent illumination ensure that doubly diffracted beams from a pair of first order Laue zone discs contribute to the singly diffracted 200-type beams. The three Bragg reflections may add in or out of phase to give domains in either light or dark contrast depending on their polarity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616577
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  • 10
    Electronic Resource
    Electronic Resource
    Double anion antisite in GaAs - the simplest member of EL2 family? (1985)
    Springer
    Applied physics 38 (1985), S. 253-261 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Properties of an aggregate composed of two nearest-neighbour AsGa defects are examined. Such an aggregate behaves like a dimer in which the two constituents are weakly coupled giving rise to a double near-degeneracy of electronic states of the system. The system is unstable against the Jahn-Teller (J-T) distortion that couples pairs of nearly degenerate states. Usually the distortion is stabilized by localization of a single electron, or a pair of electrons, at one of the two AsGa defects. If one of the two electrons is excited into theT 2 resonant state of individual AsGa then the vibronic coupling can be strong, and the resulting J-T effect can give rise to a metastable behaviour of the system. It is argued that the (AsGa)2 aggregate is the best candidate for EL2 centre in GaAs crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616060
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  • 11
    Electronic Resource
    Electronic Resource
    Experimental and theoretical investigations into the origin of cross-contamination effects observed in a quadrupole-based SIMS instrument (1985)
    Springer
    Applied physics 38 (1985), S. 235-252 
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    ISSN: 1432-0630
    Keywords: 07.75 ; 61.70 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The minimum-detection limits achievable in SIMS analyses are often determined by transport of material from surrounding surfaces to the bombarded sample. This cross-contamination (or memory) effect was studied in great detail, both experimentally and theoretically. The measurements were performed using a quadrupole-based ion microprobe operated at a secondary-ion extraction voltage of less than 200 V (primary ions mostly 8keV O 2 + ). It was found that the flux of particles liberated from surrounding surfaces consists of neutrals as well as positive and negative ions. Contaminant species condensing on the bombarded sample could be discriminated from other backsputtered species through differences in their apparent energy spectra and by other means. The apparent concentration due to material deposited on the sample surface was directly proportional to the bombarded area. For an area of 1 mm2 the maximum apparent concentration of Si in GaAs amounted to ∼5 × 1016atoms/cm3. The rate of contamination decreased strongly with increasing spacing between the bombarded sample and the collector. The intensities of backsputtered ions and neutrals increased strongly with increasing mass of the target atoms (factor of 10 to 50 due to a change from carbon to gold). The effect of the primary ion mass (O 2 + , Ne+, and Xe+) and energy (5–10keV) was comparatively small. During prolonged bombardment of one particular target material, the rate of contamination due to species not contained in the sample decreased exponentially with increasing fluence. In order to explain the experimental results a model is presented in which the backsputtering effect is attributed to bombardment of surrounding walls by high-energy particles reflected or sputtered from the analysed sample. The level of sample contamination is described by a formula which contains only measurable quantities. Cross-contamination efficiencies are worked out in detail using calculated energy spectra of sputtered and reflected particles in combination with the energy dependence of the sputtering yield of the assumed wall material. The experimental findings are shown to be good agreement with the essential predictions of the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616059
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  • 12
    Electronic Resource
    Electronic Resource
    Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique (1986)
    Springer
    Applied physics 39 (1986), S. 37-48 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion of Au in dislocation-free or plastically deformed Si (1011 to 1013 dislocations/m2) was measured with the aid of the spreading-resistance technique. The Au profiles produced indislocation-free Si slices by in-diffusion from both surfaces possess nonerfc-type U shapes as predicted by the so-called kick-out diffusion model. This model is used to calculate the contribution of self-interstitials to the (uncorrelated) Si self-diffusion coefficient,D I SD =0.064×exp(−4.80 eV/kT)m2 s−1, from the present and previous data on the diffusivity and solubility of Au in Si in the temperature range 1073–1473 K. Inhighly dislocated Si the diffusion of Au is considerably faster than in dislocation-free Si. From the erfc-type penetration profiles found in this case, effective Au diffusion coefficients were deduced and combined with data on the solubility of Au in Si. ThusC i eq D i=0.0064 ×exp(−3.93 eV/kT)m2 s−1 was obtained in the temperature range 1180–1427 K, whereC i eq andD i are the solubility and diffusivity of interstitial Au in Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01177162
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  • 13
    Electronic Resource
    Electronic Resource
    Dislocations in high-purity germanium and its relation to γ-ray detector performance (1986)
    Springer
    Applied physics 40 (1986), S. 257-261 
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    ISSN: 1432-0630
    Keywords: 29 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The presence of dislocations in high-purity germanium influences the resolution of radiation detectors made from it. The four dislocation types found with electron microscopy are studied by DLTS to understand their influence on trapping in a γ-ray detector. Only three DLTS bands were found in commercially produced material. Statistical correlation with the detector resolution reported by various detector manufacturers finally yielded useful specifications with respect to the crystallographic perfection to be met in detector grade HP-Ge. The specification limits are discussed in view of the DLTS data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616604
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  • 14
    Electronic Resource
    Electronic Resource
    A high-intensity58Co slow-positron beam and applications to probe near-surface disorder (1987)
    Springer
    Applied physics 43 (1987), S. 269-274 
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    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70 ; 07.77
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Properties and performance of a magnetically-guided, high-intensity, ultra-high-vacuum slow-positron beam are reviewed. Basic positron behaviour in solids is briefly described. Results from various58Coβ + sources in conjunction with a backscattering W(110) moderator are presented. We discuss research applications to probe depth distribution of open-volume lattice defects. Two experimental methods capable of yielding information on defects within ∼500 Å and ∼1 μm from the surface, respectively, are considered. Results are shown on defect distribution in ion implanted metals and semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00635182
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  • 15
    Electronic Resource
    Electronic Resource
    Ion-beam mixing of multilayered targets ballistic effects (1987)
    Springer
    Applied physics 42 (1987), S. 193-196 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this work a Monte-Carlo method of dynamical type is used to simulate the ion-beam mixing of a composite, multilayered target. The calculation refers to a Ni-Ta structure, on a silicon substrate, bombarded with As+ ions and elucidates the effect of the dose and of the target structure on the intermixing of the target constituents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620598
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  • 16
    Electronic Resource
    Electronic Resource
    Au gettering by Ne and Ar implantation in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 119-124 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66 ; 85.30 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The gettering efficiency for Au induced by Ne+ and Ar+ implantation has been studied. The depth distribution of gettered Au as a function of annealing temperature and dose of implanted Ne+ and Ar+ ions are presented. The experiment shows that the maximum efficiency of gettering occurs when the implantation doses are comparable with amorphization dose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620641
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  • 17
    Electronic Resource
    Electronic Resource
    Surface space-charge layer analysis in semi-insulating GaAs containing deep levels in bulk (1986)
    Springer
    Applied physics 40 (1986), S. 219-225 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A computer simulation study of space-charge layers at the surface of semiinsulating GaAs containing deep EL2 and Cr centers in bulk is presented. Substantial influence of the deep bulk levels on the main characteristics of the surface space charge layers, is demonstrated. The special features of these characteristics and the conditions of their arising are discussed.
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    URL: http://dx.doi.org/10.1007/BF00616598
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  • 18
    Electronic Resource
    Electronic Resource
    Nitrogen-oxygen complexes in Czochralski-silicon (1988)
    Springer
    Applied physics 46 (1988), S. 73-76 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 78.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Infrared spectra of nitrogen doped Czochralski-grown silicon indicate absorption lines in addition to the well-known lines of local modes of oxygen, carbon and nitrogen centers. The most prominent lines of them can be shown to be correlated with certain oxygen and nitrogen concentrations. These lines are, therefore, thought to arise from N-O complexes and are discussed in the context of an O-induced disturbance of N2-pair vibrations. The results of preliminary investigations on the stability of such complexes are also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615911
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  • 19
    Electronic Resource
    Electronic Resource
    Supersaturated Si-As alloy formation by ion implantation and pulsed electron beam annealing (1982)
    Springer
    Applied physics 28 (1982), S. 99-102 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Supersaturated surface alloys produced by very high dose (0.8−2.6×1017cm−2) implantation of As-ions into silicon and subsequent pulsed electron-beam annealing have been investigated by means of the channeling technique. The maximum solubility limit of 7×1021 As/cm3 has been determined. It exceeds the equilibrium solubility limit by more than a factor of 4. Angular scan measurements indicated that for doses above 1×1017cm−2 As atoms are displaced by about 0.12 Å from the regular lattice sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617137
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  • 20
    Electronic Resource
    Electronic Resource
    Vacancy-impurity interaction in dilute iron alloys by positron annihilation (1982)
    Springer
    Applied physics 28 (1982), S. 179-187 
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    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron annihilation measurements of the coincidence count rate at the peak of the angular correlation curve (CCR) have been performed as a function of temperature for the alloy systemFeTi in a concentration range up to about 1.3 at. %. The concentration dependence of the effective vacancy formation enthalpy (H 1V F )eff suggests the existence of an attractive interaction between vacancies and the impurity atoms. It will be shown that the description of the vacancy concentration in an alloy according to the Lomer model is not valid in this case, because it neglects binding of vacancies to solute atom pairs and to higher agglomerates. The application of a model proposed by Dorn and Mitchell gives evidence that beyond the binding of a vacancy to a single solute atom in the concentration range investigated also aggregates of a vacancy bound to two and three foreign atoms must be taken into account. The analysis of the measurements according to the method of Hehenkamp and Sander gives values for the respective vacancy-solute-atom(s) binding enthalpies H 1 B =0.25eV, H 2 B =0.53eV and H 3 B =0.91eV. The discussion of the temperature and solute-atoms concentration dependence of the vacancy concentration suggests a much more complicated behaviour than for pure metals even at low solute-atom concentrations.
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    URL: http://dx.doi.org/10.1007/BF00617984
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  • 21
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    Electronic Resource
    Introduction to defect bistability (1989)
    Springer
    Applied physics 48 (1989), S. 3-9 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 71
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Molecule-like defects in crystalline semiconductors can display bistable properties when two different structural arrangements are possible for constant charge on the defects. This introductory paper will review the physical and technical aspects of this new field of research. It also includes a detailed presentation of our experimental studies on the recently discovered bistable thermal donor defect in silicon.
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    URL: http://dx.doi.org/10.1007/BF00617758
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  • 22
    Electronic Resource
    Electronic Resource
    Photothermal ionisation spectroscopy of oxygen-related shallow defects in crystalline silicon (1989)
    Springer
    Applied physics 48 (1989), S. 41-47 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 78.30 ; 72.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Shallow thermal donors are electrically active oxygen-related thermally formed defects observed in oxygen-rich silicon annealed between 300 ° and 600 ° C. Seven donors have been identified with an average central-cell correction of only 5 meV. In view of their molecule-like nature this close agreement to the effective mass theory prediction for a hydrogen-like donor in silicon is of interest. It is shown that these centres are not correlated to the residual impurities phosphorus and boron but rather to the presence of nitrogen. Nitrogen-doped oxygen-rich samples show increased shallow thermal donor growth and a reduction in the growth of other oxygen-related donors in comparison to normally nitrogen-undoped oxygen-rich samples. A reduction in shallow thermal donor concentration at high nitrogen concentrations is reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617762
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  • 23
    Electronic Resource
    Electronic Resource
    Spectroscopic investigation of oxygen vacancies in solid oxide electrolytes (1990)
    Springer
    Applied physics 50 (1990), S. 545-549 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The primary species in both solid-state conduction and heterogeneous electrocatalysis of solid oxide electrolytes is the anion vacancy. The nature and effect of the local environment on anion vacancies in 10 m/o yttria stabilized zirconia (YSZ) and 20 m/o erbia stabilized bismuth oxide (ESB) was studied using uv-visible absorption and fluorescence spectroscopy. Partial reduction of YSZ and ordering of the oxygen sublattice in ESB is discussed. The species common to both of these phenomena, anion vacancies, was found to be luminescent and the absorption and fluorescence spectra attributable to F-center type defects is described.
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    URL: http://dx.doi.org/10.1007/BF00323446
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  • 24
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    The electrical properties of zinc in silicon (1990)
    Springer
    Applied physics 50 (1990), S. 151-156 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 17.55
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    Notes: Abstract Electrically active deep levels related to zinc in silicon are investigated in n- and p-type silicon using Deep-Level Transient Fourier Spectroscopy (DLTFS) measurements. While in n-type silicon a level at E C−0.49 eV is observed, the main zinc-related levels in p-type silicon are determined to be E V+0.27 eV and E V+0.60 eV. The latter are associated with zinc situated on regular silicon lattice sites. The emission rate of these centers exhibits a field dependence which cannot be quantitatively explained with the Poole-Frenkel model. On the other hand, a shallow level at E V+0.09 eV is observed only in boron-doped silicon which may be related to a zinc-boron complex. Other zinc-related levels are found at E V+0.23 eV and E V+0.33 eV, their concentration depending on that of zinc on substitutional sites. In addition, the evaluation of depth profiles and the analysis of the field dependence of the emission rate based on the DLTFS method is presented.
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    Residual non-idealities in the almost ideal silicon p-n junction (1990)
    Springer
    Applied physics 50 (1990), S. 273-286 
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    Keywords: 85.30 ; 72.20 ; 73.40 ; 61.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The reproducible, mass production of almost ideal silicon p-n junctions has allowed two new phenomena to be discovered: a pure generation without recombination, and a slow capacitance-free current transient. Our present knowledge of these phenomena is reviewed and speculations about the centres responsible for them are discussed; these centres seem to be connected to ultimate, unavoidable properties of the silicon p-n junction rather than to unwanted impurities.
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    Dark build-up of holograms in BaTiO3 after recording (1993)
    Springer
    Applied physics 57 (1993), S. 437-440 
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    Keywords: 78.20 ; 61.70 ; 72.40
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    Notes: Abstract Holograms recorded under suitable conditions in photorefractive BaTiO3 exhibit an unusual dark build-up. The diffraction efficiency increases by some orders of magnitude after the recording beams are switched off, and then steadily decreases afterwards. An interpretation of this effect in terms of a two-center charge transport model is given.
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    Heat “superemission” and nucleation-front propagation under laser-induced crystallization of thin amorphous films (1993)
    Springer
    Applied physics 57 (1993), S. 561-566 
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    Keywords: 61.70 ; 68.35 ; 81.40
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    Notes: Abstract The laser-induced solid-state explosive nucleation in amorphous media is studied analytically. The shapes of the temperature switching wave and that of the nucleation front as well as the formula for the front velocity are derived considering also self-consistent medium deformation. Two conditions of explosive nucleation reflecting the roles of latent heat emission and of deformation are formulated. It is shown that, in explosive nucleation, the rate of internal heat emission is proportional to the square of the latent crystallization heat (“superemission”) in analogy to photon superradiance in initially inverted two-level atomic systems.
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    High-resolution diffraction-space mapping and topography (1994)
    Springer
    Applied physics 58 (1994), S. 121-127 
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    Keywords: 07.85 ; 68.55 ; 61.70
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    Notes: Abstract The importance of collecting the distribution of scattered X-rays in two dimensions with the “right probe” will be addressed. The data-collection method will be briefly covered and how this greatly assists the interpretation of structural features giving rise to the distributed X-ray scattering. The combination of diffraction-space mapping with multiple crystal topography will also be presented to show how any region of scattering can be related to lateral structural changes or crystal imperfections. The simulation of the diffraction profiles of structures with defects will be addressed as well as the interpretation of “unusual and strange” diffraction features observed in high resolution, which yield further useful information on the materials under study.
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    Infrared holographic recording in LiNbO3:Cu (1994)
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    Applied physics 58 (1994), S. 191-195 
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    Keywords: 42.40 ; 78.20 ; 61.70
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    Notes: Abstract Holograms may be recorded in photorefractive LiNbO3:Cu with pulsed infrared light (wavelength λ=1064 nm, Q-switched Nd:YAG laser), if the crystals are previously or simultaneously illuminated with a green (λ=532 nm) light pulse. We study refractive index changes and time constants of as-grown and thermally treated crystals with different copper concentrations. A model explaining this effect is discussed.
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    Investigations of As-antisite-related defects in GaAs (1995)
    Springer
    Applied physics 60 (1995), S. 551-555 
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    Keywords: 61.70 ; 61.80
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    Notes: Abstract Optically Detected Magnetic Resonance (ODMR) is a powerful tool to study paramagnetic defects in semiconductors. As an example for the successful application of various methods based on ODMR, investigations of As antisite-related defects in GaAs are presented. Information about defect properties such as their microscopic structure, their metastability and thermal stability can be obtained by ODMR which was measured via the Magnetic Circular Dichroism of the optical Absorption (MCDA). Low temperature irradiation of GaAs (4.2 K) with 2 MeV electrons produces the Ga vacancy and some new As antisite-related defects. Annealing steps were investigated at 77 K and above. At 77 K the isolated As antisite defect is detected if semi-insulating (si) GaAs was irradiated. Between 200 K and 300 K the Ga vacancy decays. Its decay is correlated to the formation of an anti-structure pair. A second annealing step was found at about 520 K. There the anti-structure pair decays. EL2 is formed at that temperature if si material was irradiated, but this EL2 formation is not correlated with the anti-structure pair decay. We performed also magneto-optical measurements to investigate the metastability properties of the three As antisite-related defects. They all show metastability.
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    Irradiation-induced atomic defects in SiC studied by positron annihilation (1995)
    Springer
    Applied physics 61 (1995), S. 51-53 
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    Notes: Abstract The present paper reports on positron lifetime measurements on atomic defects in SiC after low-temperature (80 K) electron irradiation of low (0.47 MeV) and high (2.5 MeV) electron energies and doses from 1.8×1017 to 1.9×1019 e/cm2 as well as after subsequent isochronal annealing up to 1900 K. For these studies the single crystals of nitrogen doped (2–3×1018 cm−3) SiC grown by a modified Lely technique with hexagonal structure (6H polytype) were used. According to the positron lifetime measurements, very different types of vacancy-like positron traps are introducted after irradiation with electrons of either low or high energy. The formation of defect agglomerates and their decay at high temperatures is studied during isochronal annealing and related to earlier studies.
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    Positron lifetime and 2D-ACAR studies of divacancies in Si (1995)
    Springer
    Applied physics 61 (1995), S. 65-70 
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    Keywords: 78.70 ; 61.70 ; 61.80
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    Notes: Abstract We have measured positron lifetime and Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) distributions of Floating-Zone grown (FZ) Si specimens containing divacancies (V2) with the definite charge states, V 2 0 , V 2 −1 or V 2 −2 from room temperature to about 10 K. These charge states are accomplished by an appropriate combination of dopant species, their concentration and irradiation doses of 15 MeV electrons. with reference to the currently accepted ionization level of divacancies. The positron lifetime of the negatively charged divacancy increases with temperature, while that of the neutral divacancy shows little change with temperature. The positron trapping rate, obtained from lifetime and 2D-ACAR measurements, increases markedly with decreasing temperature. This is found not only for the negative divacancies but also for the neutral divacancy. We need a model which explains this temperature dependence. The 2D-ACAR distribution from positrons trapped at divacancies shows nearly the same distribution for the different charge states, which differs considerably from the case of As vacancies in GaAs studied by Ambigapathy et al. We have observed a small but definite anisotropy in the distribution of trapped positrons in V 2 − using a specimen containing oriented divacancies.
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    Investigations of positron lifetimes in InP with a pulsed positron beam (1995)
    Springer
    Applied physics 61 (1995), S. 321-324 
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    Keywords: 78.70 ; 68.55 ; 61.70
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    Notes: Abstract Indium Phosphide layers grown by gas source Molecular Beam Epitaxy, (MBE) have been studied by positron lifetime spectroscopy using the recently modified pulsed positron beam in Munich. The as-grown samples are known to be phosphorous rich and contain a high concentration of vacancy-type defects. On annealing, phosphorous precipitates are formed and the concentration of free volume defects increases. Positron lifetime spectroscopy has identified the grown in defects to be indium vacancies at a concentration around 1018cm−3. The dominant defects after annealing exhibit a positron lifetime characteristic of divacancies and are present at concentrations in excess of 5×1019cm−3.
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    Microstructural evolution of ZnS during sintering monitored by optical and positron annihilation techniques (1995)
    Springer
    Applied physics 61 (1995), S. 217-220 
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    Keywords: 61.70 ; 78.70
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    Notes: Abstract Positron lifetime and optical absorption techniques were employed to track the microstructural evolution of polycrystalline ZnS grown by Chemical Vapor Deposition (CVD). As grown material and material treated with Hot Isostatic Pressure (HIP) was sintered at temperatures ranging from 400 to 1000°C for 2–18 h. A 290 ps defect lifetime could be resolved in all samples, while an additional longer lifetime (τ=430 ps) was found only in samples annealed at low temperatures. This component gradually disappeared during annealing at 800°C. Associated with the disappearance of the long-lived component, the apparent bulk lifetime of the material changed from 235 to 215 ps. A 215±2 ps bulk parameter was also found for HIP-treated material annealed at temperatures greater than 400°C and hence is taken to represent the delocalized state of the positrons in ZnS. Optical absorption measurements showed that annealing at 800°C also caused the absorption profiles of the CVD and HIP samples to converge. The rate of the bulk lifetime transition correlates with the absorption changes. The observed sharpening of the absorption profile is attributed to a decrease in scattering from grain boundaries and voids, and a decrease in absorption from point defects. The 430 ps lifetime is believed to be due to trapping at voids and grain boundaries, while the 290 ps lifetime likely is due to a monovacancy stabilized as a small complex.
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    Intrinsic and extrinsic defects in semiconductors studied by perturbed γγ angular correlation spectroscopy (1995)
    Springer
    Applied physics 61 (1995), S. 207-212 
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    Keywords: 61.70 ; 81.40 ; 76.00
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    Notes: Abstract The application of the perturbed γγ angular correlation technique as an analytical tool for the characterisation of atomic defect configurations is discussed. Using the radioactive probe atom111In/111Cd, recent results on the compensation of acceptor and donor atoms in different II–VI semiconductors will be discussed, in particular the role of the cation vacancy defect.
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    On the interpretation of positron-annihilation data in powders and fine-grained materials (1995)
    Springer
    Applied physics 61 (1995), S. 203-206 
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    Notes: Abstract Monte-Carlo simulations of positron diffusion are carried out for powders consisting of spherical and ellipsoidal particles with and without defects. Following Bergersen et al. [1], elastic positron-phonon interaction is considered to be dominant for scattering processes in positron diffusion. The central question is which fraction of the positrons would be able to reach the particle boundaries. Hence, we calculate the Fraction of Positrons reaching particle Surface (FPS). The presence of defects in the particles can drastically reduce FPS depending on the defect concentration and capture rate. We demonstrate that for small-grained materials the grain surface can influence the lifetime signal significantly.
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    Positron diffusion in solids and the reconstruction of inhomogeneous defect distributions from lifetime measurements (1996)
    Springer
    Applied physics 63 (1996), S. 227-235 
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    Keywords: 78.70 ; 66.30 ; 61.70
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    Notes: Abstract The time dependent diffusion trapping equations for positrons implanted into inhomogeneous solids are analyzed. This problem is of central importance in the study of polycrystalline materials and for the application of pulsed positron beams to defect studies in materials research. The main problem in previous investigations was the necessity to solve the time-dependent diffusion equation. It prevented analytical treatment in all but the simplest applications. For the first time this difficulty is eliminated by invoking a new concept, the observable local annihilation characteristics for local implantation of positrons into the thermalized ensemble. It will be shown that the local annihilation characteristics are governed by field equations which reduce to the well known quantities of the standard trapping model in the case of homogeneous defect distributions. Furthermore, inhomogeneous defect distributions are uniquely determined from the field equations provided the local annihilation characteristics are known. Analytical solutions are derived and applied successfully to recent experimental results for a selection of simple, but realistic problems. The formal procedure includes internal drift fields and could be extended to cover also the epithermal period of positron thermalization, if necessary.
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    High-temperature structure of C60 (1996)
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    Applied physics 62 (1996), S. 295-301 
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    Keywords: 61.16 ; 61.70 ; 65.00
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    Notes: Abstract High-purity C60 has been studied by in situ X-Ray Diffraction (XRD). Between 300 and 900 K, the volume thermal expansion coefficient isα v = 4.57(4) × 10−5 K−1 with no observable deviations from linearity. Recrystallization is activated atT ≥ 600 K, as observed by the fast ( 〈 5 s) and slow ( 〉 10 min) variations in low-index Bragg intensities. At lower temperatures, thermal desorption of molecular oxygen at ≈420 K is accompanied with a step-wise increase of the 111-Bragg reflection intensity, but with no measurable change of the lattice parameter. The twin fault density has first been determined using high-resolution XRD. The (winning probability is 0.8%. Crystallites show a ± 0.3° intrinsic mosaic spread. Mechanical milling in acetone and in air increases the twinning probability to 1.8 and 3.1%, respectively.
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    Using positron 2D-ACAR as a probe of point defects in GaAs: The As vacancy as a case study (1996)
    Springer
    Applied physics 62 (1996), S. 529-532 
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    Notes: Abstract Two-Dimensional Angular Correlation of positron Annihilation Radiation (2D-ACAR) experiments have been performed on n-type GaAs. By combining these results with those from positron lifetime experiments, the momentum distribution of the arsenic vacancy in its neutral (V aAs 0 ) and negative (V As − ) charge states have been extracted. These distributions were all normalized to the respective positron lifetime that characterizes them. The first thing to be noticed is that the momentum distributions of the vacancies, as seen by the positron, are fairly isotropic and structureless. The distribution forV As 0 is more peaked than that ofV As − while the latter is more intense in the large momentum regions of the spectra. From this, it can be inferred that VA. has a smaller open volume thanV As 0 A closer look at the momentum distribution of the vacancies reveals that they are not entirely isotropic, but, in fact, have a bulk-like component. Finally, the experimental results for bulk GaAs andV As − compare well in a qualitative manner with the momentum distributions that result from an ab-initio molecular dynamics calculation.
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    Stochastic dislocation patterning during cyclic plastic deformation (1996)
    Springer
    Applied physics 63 (1996), S. 45-55 
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    Keywords: 61.70 ; 62.20 ; 81.40
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    Notes: Abstract A dislocation dynamical theory is developed for the formation of dipole dislocation patterns during cyclic plastic deformation in single glide. The stochastic dislocation dynamics adopted is suitable to account, in terms of a fluctuating effective medium, for the effects of long-range dislocation interactions on a mesoscopic scale. The theory can explain the occurrence of a matrix structure and persistent slip bands as a result of evolutionary processes, it gives the intrinsic strain amplitudes and the characteristic wavelength of these structures, and it allows for an interpretation of the structural changes associated with changes of the deformation conditions. Quantitative results are in good agreement with experimental observations.
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    Positron lifetime as a function of grain size (1977)
    Springer
    Applied physics 12 (1977), S. 217-218 
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    Notes: Abstract Published data on positron annihilation lifetime in copper as a function of grain size have been analyzed to show that there is a linear relationship between the internal grain boundary surface area, per unit volume,S v, and the positron lifetime, τ. The analysis indicates that grain boundaries are important in the trapping of positrons. It is suggested that the slope of the resulting straight line,dS v/dτ, can be used to determine the annihilation rate of the grain boundaries.
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    Crystal forms of hillocks and voids formed by electromigration on ultrapure gold and silver wires (1977)
    Springer
    Applied physics 12 (1977), S. 341-345 
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    Keywords: 61.70 ; 66 ; 68.20
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    Notes: Abstract Hillocks and voids (vacancy crystals) which were formed by electromigration on ultrapure gold and silver wires, showed only the combined crystal forms {111} and {100}. These planes are identical with the equilibrium planes GI, calculated by Stranski and Kaishew for nonpolar substances under the assumption of only nearest neighbor interaction. Hillock and void nucleation occurred on crystal imperfections (heterogeneous nucleation). Hillocks and vacancy crystals (voids) on gold showed twin formation obeying the spinel law.
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    Positron trapping in indium (1977)
    Springer
    Applied physics 13 (1977), S. 51-54 
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    Notes: Abstract The positron annihilation lineshape was measured in indium in the temperature range between 74 K and the melting point (430 K). A model based on self-trapping of positrons and trapping by vacancies was fitted through the data. A vacancy formation enthalpy of (0.48±0.03) eV was obtained.
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    Positron study of the martensitic transformation in Fe-29.5at.%Ni (1977)
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    Applied physics 13 (1977), S. 105-106 
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    Keywords: 61.70 ; 64 ; 81
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    Notes: Abstract Precision measurements of positron lifetime spectra in Fe-29.5at.%Ni alloy specimens were performed to clarify the nature of the martensitic transformation in this alloy. The forward transformation did not introduce any defects which behave as strong trapping sites for positrons. On the other hand, the reverse transformation accompanied the production of defects, to which the positron lifetime is sensitive, maybe dislocations. From the present results, the nature of the transformation was discussed.
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    Asymmetry of quadrupole doublet of Mössbauer spectra in LiNbO3∶Fe (1980)
    Springer
    Applied physics 21 (1980), S. 195-198 
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    Keywords: 61.70 ; 76.80 ; 81.40
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    Notes: Abstract Polycrystalline samples of LiNbO3 doped by the enriched57Fe isotope have been studied at room and liquid nitrogen temperatures by nuclear γ-resonance (NGR). Iron impurity concentrations were 0.07, 0.30, 1.02, 2.06 at.%, the Li/Nb ratio being 0.935, 0.990, 1.000. An asymmetry of the quadrupole doublet of NGR experimental spectra has been found. Acceptable hypotheses are discussed to explain the nature of the asymmetry: the Goldanskii-Karyagin effect, the effect of sample texture, and the electron and nuclear spin-lattice relaxation effect. On the basis of computed NGR spectra and thorough analysis of the models we can conclude that there is tendency to form coupled pairs of Fe2+ cations in neighbour lithium and niobium sites. The probability of the formation of such pairs exceeds considerably the statistical value.
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    Effect of doping and thermal vacancies on positron annihilation in semiconductors (1979)
    Springer
    Applied physics 18 (1979), S. 81-83 
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    Notes: Abstract The effect of lattice defects on positron annihilation in semiconductors was studied. In silicon, any detectable doping effect could not be found. In germanium, the thermal equilibrium measurements of annihilation lineshapes showed no vacancy effect. From these experimental facts, the interaction of positrons with lattice defects was discussed.
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    Blistering of rhenium irradiated with 21keV helium ions (1978)
    Springer
    Applied physics 17 (1978), S. 89-97 
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    Keywords: 61.80 ; 68.20 ; 61.70
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    Notes: Abstract This paper describes blistering of rhenium following 21 keV He+-ion irradiation at temperatures between 300 K and 1200 K. Blistering starts at 300 K at a dose of 3×1017 ions/cm2. The most probable blister diameter varies from 4400 Å at 300 K to 10100 Å at 1200 K. The blister depth τ bl , the blister diameter φ bl and the blister heighth bi show a distribution. From the observations one could derive the following relationships:h bl = 0.35φ bl ; τ bl =3.43φ bl 2/3 . The erosion yieldE y due to blistering is function of doseE y =0.51 atoms/ion at 3×1017 ions/cm2,E y =0.56 atoms/ion at 6×1017 ions/cm2 andE y =0.14 atoms/ion at 3×1018 ions/cm2. The sputtering yieldS (21 keV) is estimated to be ∼0.1 atom/ion. The corresponding surface regression is 44Å at 3×1017 ions/cm2 and 1323 Å at 9×1018 ions/cm2. Surface regression has therefore little influence on the observations at low doses.
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    Effect of lattice deformations on the local, magnetic dipole field of interstitial sites in H.C.P. crystals (1979)
    Springer
    Applied physics 20 (1979), S. 29-35 
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    Keywords: 76 ; 61.70
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    Notes: Abstract It is shown that lattice deformations around interstitial atoms may give a significant contribution to the local magnetic dipolar field at the interstitial site. An analysis of the dipole field measured for mouns on octahedral interstitial sites in Co shows that 1/4 of the dipole field results from lattice deformations. The double force tensor of the muon is found to be nearly isotropic and of the order of magnitude of 4eV.
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    Disorders produced during high-current and high-dose phosphorus ion implantation in silicon (1979)
    Springer
    Applied physics 20 (1979), S. 225-229 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
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    Notes: Abstract Transmission electron microscopy, optical reflection and channeling effect measurements are employed to investigate disorders in 30 keV, high dose (3×1016ions/cm2) and high current (≦5 mA) phosphorus as-implanted silicon with (111), (100), and (110) orientation as a function of temperature rise (100–850°C) by the beam heating effect during implantation. Temperature rise below 400°C results in continuous amorrphous layer formation. This contrasts with results of the recovery into single crystals for temperature rise samples above 500°C, regardless of wafer orientation. Secondary defects (black-dotted defects, dislocation loops and rodlike defects) are formed in singlecrystal recovery samples, having a deeper distribution in (110) wafers and a shallower distribution in (111) and (100) wafers. Rodlike defects observed in 850°C samples are of “vacancy” type and have the largest density in (110) wafers.
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  • 50
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    Positron trapping in electron-irradiated silicon crystals (1980)
    Springer
    Applied physics 22 (1980), S. 415-419 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.60 ; 78.70
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    Notes: Abstract The positron lifetime in electron-irradiated undoped and doped silicon crystals is studied as a function of temperature between 90 and 300 K. We show that the temperature dependence of the two lifetime components does not arise from the escape, but from the trapping rate at defects. The temperature dependences of the capture cross sections are deduced. It is concluded that in undoped crystals the positrons interact with negatively charged and neutral defects, probably divacancies and vacancy-oxygen complexes, respectively. In strongly P-doped crystals positron trapping occurs preferably in negatively charged centers.
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    Mechanism and kinetics of the diffusion of gold in silicon (1980)
    Springer
    Applied physics 23 (1980), S. 361-368 
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    Keywords: 61.70 ; 66 ; 85.30
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    Notes: Abstract The diffusion of Au in Si is known to take place via the interchange of Au atoms between substitutional (Au s ) and interstitial (Au i ) sites. So far it has generally been believed that this interchange involves lattice vacancies (V) and that it occurs via the Frank-Turnbull mechanism V+Au i ⇆Au s . It is stated in the literature that this model explains the observation that the Au s concentrationC s m in the centre of Au-diffused Si wafers increases with timet according to $$C_s^m \propto \sqrt t $$ . We show that this statement is incorrect, i.e., the Frank-Turnbull model cannot account for the $$C_s^m \propto \sqrt t $$ law. Such a dependence is expected in the case of Si wafers with a sufficiently low density of internal sinks for self-interstitials if the Au i −Au s interchange is controlled by the so-called kick-out mechanism Au i ⇆Au s +1. Since this mechanism involves self-interstitials (I) the present result is in accordance with the fact that under high-temperature equilibrium conditions the dominating intrinsic point defects in Si are self-interstitials and not vacancies as in Ge or metals.
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    High-field susceptibility of EuS single crystals (1980)
    Springer
    Applied physics 22 (1980), S. 155-160 
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    Keywords: 76 ; 61.70
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    Notes: Abstract The high-field susceptibility of a cylindrical EuS single crystal was measured in the temperature range between 2.5 K and 16.5 K with applied magnetic fields up to 45 kOe. The measured field dependence of the susceptibility was explained by taking into consideration thermally excited spin waves and the influence of microstructural defects on the spin arrangement. The exchange integral with nearest neighbour and next-nearest neighbour atoms,J=J 1+J2, was determined to be (0.14±0.02)k B(K). This result is in good agreement with the value derived from neutron scattering experiments. The analysis of the influence of different types of crystal defects on the law of approach to ferromagnetic saturation shows that the nonmagnetic inclusions play a dominant role in our case. The deduced density of nonmagnetic inclusions according to the micromagnetic theory agrees well with the result of scanning elecron microscope (SEM) observations.
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    Analysis of resistance fluctuations independent of thermal voltage noise (1980)
    Springer
    Applied physics 22 (1980), S. 185-187 
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    Notes: Abstract New methods for thermal-equilibrium investigations of atomic vacancies or of dislocation movements in metals require measurements of minute resistance fluctuations. The accuracy of such measurements is limited by thermal noise from the resistor. The present paper proposes a method for analysing resistance fluctuations independent of voltage noise.
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    Pulsed electron-beam annealing of high-dose arsenic implanted silicon (1980)
    Springer
    Applied physics 22 (1980), S. 385-388 
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    Keywords: 61.70 ; 81.40
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    Notes: Abstract The effects of pulsed electron-beam annealing of high-dose As implanted {111} Si single crystals has been studied. The depth distributions and lattice location of the As atoms were obtained using MeV4He+ backscattering and channeling technique. The implantation energy was 100 keV with a total dose of 3.5·1016/cm2. Above the threshold energy of 0.9 J/cm2 the single-crystal transition was observed with about 95% of the As atoms on substitutional lattice sites. This leads to an As concentration of 2·1021/cm3 which was demonstrated to be a metastable one.
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    Lattice defects of V3Si single crystals studied by positron annihilation (1981)
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    Applied physics 25 (1981), S. 65-70 
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    Keywords: 78.70 ; 61.70 ; 61.80
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    Notes: Abstract The sensitivity of positrons to point defects created by the irradiation of V3Si with neutrons is demonstrated. We found no indication of thermal vacancies by thermal equilibrium measurement up to 1273 K which indicates that the monovacancy formation enthalpy for V3Si isH 1V F ≧(1.84±0.14) eV. Investigations within the range of homogeneity for excess vanadium suppot the idea that substitutional defects are the dominating defect type, whereas for excess silicon a direct confirmation of existing structural vacancies as the dominating defect type is given.
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    Non-equilibrium dopants incorporation in silicon melted by laser pulses (1983)
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    Applied physics 30 (1983), S. 195-211 
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    Keywords: 61.70 ; 81.10 ; 66.30
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    Notes: Abstract The rapid solidification of silicon layers melted by high-power laser pulses lead to an enhanced incorporation of implanted dopants in substitutional lattice sites. A review of experimental results, heat and mass transport calculations, is presented together with the latest models for solute redistribution during rapid solidification. Interfacial instabilities, leading to cell structure and other factors limiting the maximum concentration of incorporated dopants are also presented.
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    Arsenic antisite defects as the main electron traps in plastically deformed GaAs (1983)
    Springer
    Applied physics 30 (1983), S. 233-235 
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    Keywords: 61.70 ; 71.55
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    Notes: Abstract It is found from DLTS measurements that plastic deformation of GaAs single crystal creates a new kind of electron traps with an activation energy of 0.37 eV, and gives rise to an increase in the concentration of main electron traps with an energy of 0.80 eV. By comparing the concentrations of the main electron traps before and after deformation with analogous concentrations of AsGa paramagnetic centers, found by EPR experiments, it is concluded that the centers observed in both cases are of the same origin. A nonstandard feature of the main traps is discovered: linear dependence of the DLTS-peak amplitude on the logarithm of the filling-pulse duration time. This feature can be explained in terms of the barrier-limited capture rate, assuming the traps are arranged in rows.
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    Proton conductivity in the layer compound H3OUO2AsO4·3H2O (HU As) (1983)
    Springer
    Applied physics 32 (1983), S. 155-158 
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    Keywords: 66.30 ; 61.70 ; 82.65
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    Notes: Abstract The proton conductivity in tetragonal H3OUO2AsO4·(3-δ)H2O has been measured above the transition temperature at 299 K. The conductivity, calorimetric and spectroscopic data depend on the water content and the transition is suggested to be a peritectic reaction setting free a small amount of solution, which stays strongly adsorbed between the layers of the structure and gives rise to the high conductivity.
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    Tunneling from dislocation cores in silicon Schottky diodes (1985)
    Springer
    Applied physics 36 (1985), S. 55-61 
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    Notes: Abstract Selfquenching of the photocapacitance and of the reverse photocurrent in Schottky diodes made on dislocatedn-type silicon was discovered. A phenomenological model explaining this, rather unexpected, phenomenon is proposed. The model requires an introduction of a new mechanism of diode conductance via dislocation lines. Crucial for this mechanism is the possibility of electron tunneling from dislocation to the conduction band.
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    On the trapping of positrons in cadmium in the temperature range from 80 to 330 K (1982)
    Springer
    Applied physics 27 (1982), S. 257-261 
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    Keywords: 78.70 ; 61.70 ; 81
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    Notes: Abstract The positron lifetime was measured in cadmium in the temperature range between 80 K and 500 K. For the first time a plateau was observed by this method in polycrystalline samples. The obtained data are well explained by depletion of shallow traps forT≤180 K and by self-trapping in the prevacancy region.
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    Point defects, diffusion processes, and swirl defect formation in silicon (1985)
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    Applied physics 37 (1985), S. 1-17 
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    Keywords: 61.70 ; 66.30 ; 85.30
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    Notes: Abstract The paper consists of three parts. In the first part we review the basic experimental and theoretical results which shaped our present knowledge on point defects and diffusion processes in silicon. These results concern on one side oxidation effects which established that silicon self-interstitials and vacancies coexist in silicon and on the other side diffusion of gold into dislocation-free silicon which allowed to determine the self-interstitial contribution to silicon self-diffusion and to estimate the corresponding vacancy contribution. In the second part we discuss topics for which an understanding is just emerging within the framework of coexisting self-interstitials and vacancies: reaching of local dynamical equilibrium between self-interstitials and vacancies; rough estimates of the thermal equilibrium concentrations of self-interstitials and vacancies and their respective diffusivities, and finally, various possibilities to generate an undersaturation of self-interstitials. In the third part we examine swirl defect formation in silicon in terms of vacancies and self-interstitials.
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    Iron contamination in ion implanted silicon, as revealed by x-ray and electron diffraction (1986)
    Springer
    Applied physics 39 (1986), S. 191-195 
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    Keywords: 61.70 ; 61.80
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    Notes: Abstract A surface contamination effect was detected by double-crystal x-ray diffraction analysis of silicon wafers implanted with silicon ions at different doses and energies after annealing at 700 °C. The hypothesis of recoiled oxygen from the native oxide, as the impurity responsible for surface strain, was excluded by x-ray characterization of a series of samples implanted through thermally grown silicon oxides. The surface positions of the strain, resulting from x-ray analysis after 700 °C annealing and the analysis of the electron diffraction patterns, taken on particles originated from precipitation of the impurity by 1000 °C heating, allowed to conclude that the contamination phenomenon is due to iron atoms coming from the ion implanter.
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    Focused ion beam gallium implantation into silicon (1986)
    Springer
    Applied physics 39 (1986), S. 183-190 
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    Keywords: 61.70 ; 61.80
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    Notes: Abstract The electrical properties and lattice disorders of 50 keV, focused ion beam (FIB) gallium-implanted silicon layers have been investigated as a function of beam scan speed and ion dose. The critical dose for continuous amorphous layer formation is 8 ∼ 10 × 1013 ions/cm2, when the beam scan speed is lowered to about 10−2 cm/s. This is about 1/3 that of conventional ion implantation. The increase in secondary defect formation after annealing is also observed as the beam scan speed decreases under implantation conditions close to the critical dose. However, the effect of high dose rate on the electrical activation of gallium atoms and critical dose reduction is not as significant as with FIB implantation by a lighter ion mass, such as boron. The results are compared with those obtained by conventional ion implantation.
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    Photopyroelectric spectroscopy (P2ES) of electronic defect centers in crystalline n-CdS (1987)
    Springer
    Applied physics 44 (1987), S. 123-130 
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    Keywords: 72.20 ; 61.70
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    Notes: Abstract Photopyroelectric spectroscopy (P2ES) of n-CdS single crystals was performed at an open circuit, and in conjunction with photocurrent spectroscopy (PCS) in the presence of an applied ac or dc transverse field. The results showed that P2ES is very sensitive to the presence of deliberately introduced subbandgap defect structures, with the P2E signal dominated by non-radiative de-excitation mechanisms at defect centers. The potential of this technique as a powerful electronic defect diagnostic tool, combined with the overall experimental simplicity, was demonstrated with mm-thick crystals used as received in an open-cell geometry.
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    EL2 deep level in sub-bandgap surface photovoltage spectra in GaAs bulk crystals (1987)
    Springer
    Applied physics 43 (1987), S. 117-121 
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    Keywords: 61.70 ; 73.40
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    Notes: Abstract Experimentally observed surface-photovoltage-method (SPV) spectra in the subbandgap energy range are presented for a real (100)GaAs surface, treated with preepitaxial procedures. Conductive, n-type GaAs and semi-insulating GaAs are studied. It is shown that SPV spectra are formed as a result of the simultaneous action of both surface states and deep bulk levels. The spectral shape of the surface-state photoionization cross-section is qualitatively determined. The influence of the deep bulk levels on the SPV spectra is explained, and the photoionization cross-section for both Cr and EL2 levels is qualitatively determined.
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    Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon? (1989)
    Springer
    Applied physics 48 (1989), S. 219-228 
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    Keywords: 61.70 ; 66.30 ; 85.30
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    Notes: Abstract In- and out-diffusion experiments of oxygen in silicon indicate the existence of an oxygen-containing species diffusing much faster than interstitial oxygen at temperatures below about 700°C. The formation of oxygen-related thermal donors in the temperature range around 450°C also requires a fast diffusing species. The paper examines the possibility of this fast diffusing species beingmolecular oxygen, as had been suggested earlier. Special emphasis will be placed on experimental results which have become available since that time. These results allow one to relate thermal donor formation to the loss of interstitial oxygen and to oxygen precipitation. The role of carbon is also considered in this context.
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    Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation (1989)
    Springer
    Applied physics 48 (1989), S. 255-260 
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    Notes: Abstract Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during annealing have been determined by double crystal x-ray diffraction and correlated to anomalous P diffusivity. A qualitative distribution of the interstitial excess in solution in the silicon lattice during annealing is proposed for the two different cases. These point defects, released by the dissolution of the interstitial clusters produced by the implanted ions, have been identified as responsible for the observed enhanced P diffusion.
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    A novel technique for measuring resistance fluctuations independently of background noise (1989)
    Springer
    Applied physics 48 (1989), S. 233-236 
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    Keywords: 06 ; 07 ; 61.70
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    Notes: Abstract A novel method is presented for measuring the spectral density of resistance fluctuations without the explicit determination of the voltage background noise (Johnson noise, pre-amplifier noise). The output of a standard ac bridge excited by a single-frequency alternating current is demodulated by two phase-sensitive detectors which operate in quadrature. When the phase difference between excitation and detection is properly set, the real part of the cross-spectral density of the two demodulators shows only the spectral density of the resistance fluctuations and not the disturbing background noise. The feasibility of our new method is demonstrated by measurements of 1/f noise of a thin-film A1 sample.
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    Conductivity and light-induced absorption in BaTiO3 (1990)
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    Applied physics 51 (1990), S. 13-17 
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    Keywords: 61.70 ; 72.40 ; 78.20
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    Notes: Abstract A charge transport model including deep and shallow traps explains both the nonlinear relation between photoconductivity and light intensity and the light-induced absorption in BaTiO3. A correlation between measurements of photoconductivity and light-induced absorption as a function of temperature yields parameters for the shallow center, among them thermal activation energy and generation rate.
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    Temperature characteristics of positron trapping at defects in electron-irradiated silicon (1989)
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    Applied physics 49 (1989), S. 659-664 
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    Keywords: 61.70 ; 61.80 ; 78.70
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    Notes: Abstract Positron-annihilation lifetime and Doppler-broadening measurements are used to investigate defects in silicon irradiated at 373 K with 6 MeV electrons to a dose of 1×l019e/cm2. In the unirradiated silicon sample (p type) a temperature-independent behaviour of the bulk-lifetime is observed in the temperature interval 110–500 K with a constant value of 220±1 ps. The slight effect observed on the S-parameter evolution is explained taking into account the thermal expansion of the lattice. The lifetime results obtained at 80 K and at 300 K after isochronal annealing as well as the behaviour of the intensity of the second lifetime componentI 2 during lifetime measurements below the irradiation temperature in the irradiated silicon sample (n type), clearly indicate the temperature dependent characteristics of the positron trapping cross section σt(T) ∝T n withn= −1.905±0.016. From isochronal annealing results, an annealing stage is observed in which di-vacancies agglomerate into quadri-vacancies. The mean positron lifetime in those quadri-vacancies is 350 ps.
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    Light scattering topography and photoluminescence topography (1990)
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    Applied physics 50 (1990), S. 531-540 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 78.55 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Two attractive methods for materials characterization are applied and discussed: (a) light scattering topography for fast and nondestructive testing of structural perfection, and (b) photoluminescence topography for evaluating the light emission characteristics of photoluminescent materials. Among the examples presented are semiconductor substrates and films of silicon, silicon-on-insulators of different kind, and III–V materials.
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    URL: http://dx.doi.org/10.1007/BF00323444
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    Dislocations on Ag(111) (1991)
    Springer
    Applied physics 52 (1991), S. 218-221 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.70Ph
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Various dislocations on Ag(111) were imaged with a scanning tunneling microscope, e.g. screw dislocations, Lomer-Cottrell locks and stacking fault tetrahedron. The distortion field near a screw dislocation was measured.
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    URL: http://dx.doi.org/10.1007/BF00324423
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    A study of sputter-induced defects in magnetron-sputtered CoSi2 and TiSi2 Schottky barriers on n- and p-type GaP (1991)
    Springer
    Applied physics 52 (1991), S. 60-64 
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    ISSN: 1432-0630
    Keywords: 73.30 ; 61.70 ; 81.15C
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Magnetron-sputtered CoSi2 and TiSi2 Schottky barriers on n- and p-type GaP were investigated. Their hitherto unknown barrier heights were determined to be 0.98 eV (for CoSi2/n-GaP and CoSi2/p-GaP), 0.91 eV (for TiSi2/n-GaP), and 0.90 eV (for TiSi2/p-GaP). It was found that magnetron-sputtering induced a compensated layer near the surface, both for n- and p-type GaP, with a thickness of about 0.05 μm. As the dependence of the shift of the Mott-Schottky intercept with the V-axis on the substrate dopant concentration obeyed some specific law, we proposed that the defects are neutral complexes of dopant ions and sputter-induced native defects. These native defects were assumed to depend on the Fermi level position, namely the PGa antisite and the VP vacancy for p-GaP and the VGa vacancy for n-GaP. The conversion between these defects occurs by nearest neighbour hopping of a phosphorus atom. The Schottky barrier heights obtained on p-GaP could be explained by Fermi level pinning at the surface due to the PGa defects. This could not be confirmed by n-GaP as the energy level position of the VGa was not available. The defects could be annealed out between 200° C and 300° C and the associated change of the Schottky barrier height corroborated the proposed model.
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    URL: http://dx.doi.org/10.1007/BF00323685
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    TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon (1992)
    Springer
    Applied physics 54 (1992), S. 124-131 
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    ISSN: 1432-0630
    Keywords: 81.40 ; 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.
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    URL: http://dx.doi.org/10.1007/BF00323898
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    Properties of silicon-electrolyte junctions and their application to silicon characterization (1991)
    Springer
    Applied physics 53 (1991), S. 8-19 
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    ISSN: 1432-0630
    Keywords: 82.45 ; 61.70 ; 68.45
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A number of interesting and still not fully understood phenomena occur if silicon is used as an electrode in an electrochemical cell. Effects include porous silicon layer (PSL) formation with features on a nanometer scale, surface roughening on a micrometer scale, quantum efficiencies for light generated currents much larger than 1, preferential etching of defects, electropolishing, and voltage or current oscillations. It is shown that despite the complexities of chemical reactions involved, a basic understanding of the electrode behavior is possible from a semiconductor physics point of view and that it can be advantageous to use the silicon — electrolyte junction for analytical purposes. Topics such as defect characterization, measurements of minority carrier diffusion length, or surface recombination velocities can be addressed in unique ways by taking advantage of particular properties of the silicon — hydrofluoric acid system. Based on the general description of the Si — electrolyte junction given in this paper, strengths and limitations of some electrochemical methods are discussed in some detail and illustrated by examples.
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    URL: http://dx.doi.org/10.1007/BF00323428
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    Electrical activity of dislocations: Prospects for practical utilization (1991)
    Springer
    Applied physics 53 (1991), S. 189-193 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical activity of interfacial misfit dislocations in silicon has been examined using the electron beam induced current technique (EBIC) in a scanning electron microscope. “Clean” misfit dislocations, i.e. no EBIC contrast, formed during high-temperature Si(Ge) chemical vapor epitaxy were studied. These defects were subsequently decorated with known metallic impurities (Au and Ni) by diffusion at 400° C to 1130° C from a back-side evaporated layer. Qualitative analysis of the electrical activity in relation to the energy levels anticipated for the clean or decorated dislocations is presented. Of particular interest is the case of defect-induced conductivity type inversion which occurred both at the top surface and at the buried dislocated interfaces of the multilayer. The prospects for using dislocations in a beneficial manner as active elements in electronic devices are discussed.
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    URL: http://dx.doi.org/10.1007/BF00324249
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    High-temperature thermal evolution of SiAs precipitates in silicon (1992)
    Springer
    Applied physics 54 (1992), S. 221-224 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 64 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The thermal evolution of monoclinic SiAs precipitates at 1050° C in silicon samples implanted with 1 and 1.5×1017 As/cm2 was followed by transmission electron microscopy (TEM) and secondary neutral mass spectrometry (SNMS). These experiments show, for the first time, the coexistence of two different states of As in silicon, i.e., the electrically active and the inactive mobile dopant, in equilibrium with monoclinic SiAs precipitates. Moreover, they provide, for the saturation concentration of As in silicon, which includes both these states, a value of 3×1021 cm−3 at 1050° C.
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    Trench formation in surfactant mediated epitaxial film growth of Ge on Si(100) (1992)
    Springer
    Applied physics 54 (1992), S. 265-269 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 61.16D ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have used STM to study the surface morphology of thin epitaxial Ge films grown on Si(001) in the presence of the “surfactant” As. The surfactant forces layer-by-layer growth up to 12 ML Ge coverage which could partly be explained by the geometrical surface arrangement of the growing film. Beyond 12 ML coverage we observed a network of trenches which decorate the earlier described V-shaped defects inside the film. Overgrowth of such defects is studied and a mechanism discussed.
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    Diffusion-induced decay of disclinations and solid state amorphization in mechanically alloyed materials (1992)
    Springer
    Applied physics 54 (1992), S. 517-519 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 62.20.Fe ; 64.70.−p
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A theoretical model is proposed which treats the diffusion-induced decay of fragment boundary disclinations as being a micromechanism for the solid state amorphization in mechanically alloyed materials. Within the framework of the suggested model the kinetics of amorphous-phase nucleation centres (spread cores of the decayed disclinations) is studied. In doing so, kinetic equations are suggested and solved, which describe the evolution of the radius of the amorphous core of the decayed disclination.
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    URL: http://dx.doi.org/10.1007/BF00324331
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    Laser-induced defect formation in semiconductors (1992)
    Springer
    Applied physics 55 (1992), S. 161-166 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electron-deformation-thermal theory of pulsed laser-induced point defect generation in strongly absorbing semiconductors is developed. The theoretical results obtained are in a good agreement with the results of experiments carried out in Ge, GaAs, and GaP.
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    URL: http://dx.doi.org/10.1007/BF00334217
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    High-resolution electron microscopy of heterostructures and interfaces (1993)
    Springer
    Applied physics 57 (1993), S. 377-383 
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    ISSN: 1432-0630
    Keywords: 07.80 ; 61.70 ; 81.10 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High-resolution transmission electron microscopy (HREM) allows to study a wide range of device-relevant topics in heteroepitaxial layer structures. Quantitative HREM may be used to obtain chemical information on a near-atomic scale from interfacial transition zones. The physical background is described and demonstrated on several examples in the Al x Gal1−x As/GaAs system. The HREM contrast of antiphase boundaries in InP grown on Si was studied by image simulations and has been compared to experimental images. Silicon carbide precipitates were identified by HREM at the homoepitaxial Si/Si interface. They stem from carbon contamination prior to Si layer growth.
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    Antimony thin-film transport properties and size effect (1995)
    Springer
    Applied physics 60 (1995), S. 87-91 
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    ISSN: 1432-0630
    Keywords: 61.10 ; 61.70 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Antimony thin films were vacuum deposited on glass substrates at room temperature. X-ray structural studies were performed. The thickness dependence of both the de electrical resistivity and the Hall coefficient were earried out at room temperature over a thickness range from 29 nm to 216 nm. The type of conduction, the concentration and the mobility of charge carriers were revealed. Analysis incorporating the electrical resistivity and the Hall effect data has led to the determination of the specular and non-specular size-effect parameters. Parameters such as the bulk resistivity (ϱ 0), bulk mean free path (λ 0), grain-boundary transmission coefficient (t), external surface parameters (U), surface scattering factor (p) and grain-boundary parameter (V), were all evaluated without using any adjusting parameters. Beside the background contribution to the film resistivity, an estimation of the contribution of the surface and grain-boundary to the film resistivity was also carried out.
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    Positron annihilation in the quenched and electron-irradiated NiSb intermetallic compound (1994)
    Springer
    Applied physics 59 (1994), S. 163-168 
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    ISSN: 1432-0630
    Keywords: 78.70. Bj ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Samples of the near equiatomic NiSb compound were irradiated by 3 MeV electrons at 20 K or quenched from 1103 K and 1333 K and subsequently annealed isochronally. The behaviour of defects created by quench or irradiation were studied by the positron annihilation technique. Only one recovery stage was found around 425 K for quenched specimens, but two distinct stages (100 K and 425 K) were observed after irradiation. The 425 K stage is ascribed to the migration of Ni vacancies giving dislocation loops. The recombination of mobile interstitials with vacancies after irradiation is assumed to occur between 100 K and 250 K. Doppler broadening and lifetime variations of positrons as a function of the measuring temperature in these irradiation samples are discussed.
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    URL: http://dx.doi.org/10.1007/BF00332210
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    Photorefractive properties of ruthenium-doped potassium niobate (1994)
    Springer
    Applied physics 59 (1994), S. 563-567 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 72.40 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photoconductivities and photovoltaic currents of ruthenium-doped KNbO3 are orders of magnitude larger than that of undoped and ion-doped crystals. KNbO3:Ru is very sensitive for holographic recording with red light and the photovoltaic current increases sublinearly with light intensity.
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    A study of thermal and mechanical effects on materials induced by pulsed laser drilling (1996)
    Springer
    Applied physics 63 (1996), S. 93-101 
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    ISSN: 1432-0630
    Keywords: PACS: 81.40 Z ; 81.60 Z ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Holes drilled in metals and silicon using different short-pulse lasers (copper vapour, Nd : YLF and titanium : sapphire) were characterized under optical and electron microscopy. The aim was to analyze and compare the thermal and mechanical effects on materials induced by laser drilling with a wide range of pulse widths (50 ns to 200 fs) and power densities (108 W/cm2 to 1015 W/cm2). Heat affected structural zones around micro-holes drilled in cold-rolled copper were revealed by analyzing ion-polished hole sections in the scanning electron microscope using electron channelling contrast. The heat affected zones were found to have a maximum width of 5 μm to 10 μm, independent of the duration of the pulses. Mechanically and thermally induced deformations and slip phenomena, including “prismatic punching”, were observed in laser-drilled molybdenum monocrystals. The dislocation arrangement which developed during laser drilling of silicon monocrystals was visualized by transmission electron microscopy. The microscopic studies showed that for percussion drilling in the high fluence range characterized by high ablation rates of a few micrometres per pulse the use of shorter pulses (τH〈50 ns) did not lead to any appreciable reduction in the melt component, material re-deposition or thermal load on the wall of the hole. In addition, the increasing mechanical loads on the material due to the higher pressure in the drill channel becomes a limiting factor for the precision of the processing.
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    URL: http://dx.doi.org/10.1007/BF01567635
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    Positron lifetimes and annihilation lineshape in Cd and au from 4.2 K to the melting points (1977)
    Springer
    Applied physics 12 (1977), S. 59-67 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 81
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract By means of an integrated source-specimen technique the temperature dependence of positron lifetimes and annihilation lineshapes has been measured, on the same specimens of gold and cadmium from 4.2K to the melting points, and also in electronirradiated and quenched gold. The anomalous temperature dependence of positron annihilation at intermediate temperatures (200 to 350 K in Cd, 270 to 750 K in Au) discovered by Lichtenberger, Schulte, and MacKenzie is confirmed. The data are incompatible with the idea that the intermediate temperature dependence is due to thermal expansion. They are well explained by an extension of the trapping model which includes the formation of metastable self-trapped positrons. From lineshape measurements after electron irradiation at 180 K and after quenching it is deduced that the trapping rate of positrons at vacancy-type defects in Au is temperature independent below room temperature.
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    Laser effects in silicon with deep amorphous layer (1979)
    Springer
    Applied physics 20 (1979), S. 353-356 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effects of single-pulse ruby laser irradiation have been investigated in Si samples with disorder layers located at a depth of 2000 Å from the crystal surface and extending up to 8000 Å. This disorder was obtained by implantation with 350 keV N+ to a fluence of 2×1016/cm2. Channeling, diffraction and transmission electron microscopy were used to characterize the structure of the irradiated layers. After 1.5 J/cm2 irradiation the damaged layer reorders partially, while for about 2.0J/cm2 the surface single crystal becomes polycrystalline. At a higher energy density all the material undergoes the transition to single crystal. Calculations based on the liquid model accounts in part for the experimental results.
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    Defect structure in EuS single crystals grown from the melt (1979)
    Springer
    Applied physics 18 (1979), S. 29-33 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 62.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The defect structure in EuS single crystals grown form the melt is studied by etch pitting, scanning and high-voltage electron microscopy. Circular and square etch pits and a second phase in the shape of thin hexagonal platelets are observed by etching. Microprobe analysis indicates the platelets to consist of Eu metal. In the transmission electron microscope, smoothly curved dislocations and helical dislocations, small dislocation loops and inclusions associated with dislocations are observed. The possible origin of the detected dislocation structure is considered with reference to climb and glide processes occurring during cooling down the grown crystals. The results corroborate the glide geometry of the NaCl lattice for EuS.
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    Role of deposition conditions, impurities and structural defects in the epitaxial growth of thin films (1981)
    Springer
    Applied physics 24 (1981), S. 85-88 
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    ISSN: 1432-0630
    Keywords: 68.50 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A summary of the theoretical and experimental investigations carried out to understand the problem of epitaxy is given. The effect of deposition conditions and the nature of the substrate-deposit combination on the orientation of the final film is discussed. The importance of the nucleation and growth stages, reorientation and recrystallization effects and the influence of the impurities and defects in the substrate surface on the quality of the films deposited are presented.
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    Low-power multi-pulse laser annealing of α-Ge (1983)
    Springer
    Applied physics 30 (1983), S. 161-167 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this paper we want to show by means of Reflection High Energy Electron Diffraction (RHEED) techniques that the recrystallization processes taking place on amorphous germanium films irradiated with low-power superimposed ruby laser pulses occur gradually. Furthermore, in implanted α-Ge films the amorphous-crystalline front moves from the surface of the specimen towards the substrate, while the opposite occurs for glow-discharge deposited films. Moreover, electron microscope observations carried out with a double-stage carbon replica technique at different depths in the specimen show that defect migration is one of the competitive mechanisms in low-power laser annealing.
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    Annealing behavior ot trap-centers in silicon containing A-swirl defects (1982)
    Springer
    Applied physics 29 (1982), S. 105-111 
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    ISSN: 1432-0630
    Keywords: 71.55F ; 61.70 ; 73.40Q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The annealing behavior of trap-centers was studied in float-zone silicon wafers containing A-swirl defects. Samples from areas of high and low A-swirl density were annealed in nitrogen ambient between 100° and 900 °C, and analysed using the Deep Level Transient Spectroscopy. The results indicate, that two levels atE c }-0.07 eV,σ n=4.6×10−16 cm2, andE c−0.49eV,σ n=6.6×10−16cm2 are caused by one defect, for which the silicon di-selfinterstitial is a likely interpretation. A level atE c }-0.11 eV was assigned to interstitial carbon. Both defects annealed out at about 170 °C. After 600 °C annealing an additional level atE c−0.2 eV was detected, which was attributed to an interstitial silicon carbon complex. Heat treatment at 800 °C generated a new level atE c−0.49 eV,σ n=2.9×10−16cm2 only in the area of high A-swirl defect density. This level was also observed after oxidation and subsequent annealing of silicon.
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    Disclosure of defects in YAG crystals by the thermoluminescence method (1984)
    Springer
    Applied physics 35 (1984), S. 249-253 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 71.35 ; 78.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The topograms revealing the anisotropic distribution of defects in the volume of monocrystalline YAG samples have been obtained by the thermoluminescence (TL) technique. It has also been shown that the anisotropic distribution of the lattice defects affects strongly the shape of the TL curves. The greatest changes in the TL intensity were observed in the areas of the samples distributed symmetrically every 120°. It was noted that the selective distribution of the TL intensity is caused mainly by the presence of the (211) facets as well as growth striations formed during the growth process. The groups of lines observed in the TL spectrum have been ascribed to the Tb3+ ions, excited owing to the radiationless energy transfer from the bound exciton states (BES).
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    Thermoelectric power of YBa2Cu3Ox in equilibrium with gas phases (1988)
    Springer
    Applied physics 47 (1988), S. 205-208 
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    ISSN: 1432-0630
    Keywords: 74.70 ; 72.20 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thermoelectric power (TP) and electrical conductivity (EC) measurements were performed for YEa2Cu3Ox at 1128 K under controlled oxygen partial pressure varying between 50 and 105 Pa. Three regimes are observed for the electrical properties. At low $$p_{{\text{O}}_{\text{2}} } (〈 1.6{\text{ }} \times {\text{ 10}}^{\text{2}} {\text{ }}{\text{Pa}})$$ both TP and EC remain constant with $$p_{{\text{O}}_{\text{2}} } $$ . In the medium range $$(1.6{\text{ }} \times {\text{ 10}}^{\text{2}}〈 p_{{\text{O}}_{\text{2}} }〈 7.6{\text{ }} \times {\text{ 10}}^{\text{3}} {\text{ Pa)}}$$ sharp changes of both electrical parameters occur; TP changes sign from positive above 4×102 Pa to negative below this $$p_{{\text{O}}_{\text{2}} } $$ value. In the high $$p_{{\text{O}}_{\text{2}} } $$ region (〉7.6×103 Pa) TP vs log $$p_{{\text{O}}_{\text{2}} } $$ exhibits two slopes; 5.1 below 1.5×104 Pa and 8.4 above this $$p_{{\text{O}}_{\text{2}} } $$ value. The slopes can be discussed in terms of the defect structure involving singly and doubly ionized oxygen vacancies below and above 7.6×103 Pa, respectively.
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    The electrical activity of stacking faults in Czochralski silicon (1989)
    Springer
    Applied physics 48 (1989), S. 431-436 
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    ISSN: 1432-0630
    Keywords: 72.20J ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A spectroscopic analysis by the light-beam-induced-current technique has been carried out to study the electrical properties of stacking faults in Czochralski silicon subjected to internal gettering treatments. By changing the wavelength of the light beam probing the sample, we have obtained the depth profiling of the stacking fault electrical activity. Occurrence of minority carrier recombination and generation processes at some stacking faults, corresponding, respectively, to dark and bright levels in a grey-shade imaging, has been observed. The presence of fixed charges at the defect-silicon matrix interface is hypothesized as a possible cause of the observed images.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619714
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  • 95
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    Correlations between clusterization and electrical properties within fluorite-type anions excess solid solutions: Setting of a model (1989)
    Springer
    Applied physics 49 (1989), S. 3-12 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We proposed a model to correlate, in a continuous manner, the composition dependence of electrical properties and the progressive extension of clusterization when the substitution rate increases in a fluoride anion excess CaF2-type solid solution of M1−xM x ′2+α F2+αx(α=1,2,3). A new classification of clusters is given based on the presence or absence of coexistence between two types of interstitial fluoride ions. The second part of the paper is devoted to the representation of the sum of interstitial fluoride ionsn F int and the sum of vacancies in normal sitesn □ according to the general equationy=(mx 3+λqx)/(x 2+q). This model allows us to correlate the structural and electrical properties of a large number of solid solutions with fluorite-type structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615459
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  • 96
    Electronic Resource
    Electronic Resource
    Structural, electrical and catalytic properties of ion-implanted oxides (1989)
    Springer
    Applied physics 49 (1989), S. 33-40 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 81.40 ; 81.60 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of oxides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615462
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  • 97
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    Electronic Resource
    The determination of dislocation density depth profiles in surface layers from broadening of X-ray diffraction profiles (1990)
    Springer
    Applied physics 50 (1990), S. 107-109 
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    ISSN: 1432-0630
    Keywords: 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A method is proposed for the determination of dislocation density depth profiles in the thin surface layers comparable to the penetration depth of X-rays, with no need to remove the surface layers by chemical or electrolytic polishing. The dislocation density depth profile is modelled mathematically and the parameters determining the profile can be evaluated from the Fourier transform of the X-ray diffracted profiles with various wavelengths of radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323960
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  • 98
    Electronic Resource
    Electronic Resource
    Gold diffusion in silicon by Rapid Optical Annealing (1990)
    Springer
    Applied physics 50 (1990), S. 197-205 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Gold diffusion in silicon is investigated using Rapid Optical Annealing at temperatures in the range of 800°C to 1200°C and annealing times from 300 s down to 1 s. The resulting content of substitutional gold is determined by spreading resistance measurements and analyzed by comparison with extensive numerical simulations. The profiles obtained show a broader spectrum as compared to the U-shapes after long time diffusion. The cooling process affects the profiles significantly, since they depend on the wafer thickness. An unexpected penetration depth was found after 1200°C diffusion in thick wafers, which are subject to small cooling rates. This phenomenon is due to a special combination of reverse kick-out, deep diffusion of highly supersaturated interstitial gold, and again an incorporation in lattice sites, termed the RDI effect. Numerical calculations allow us to reproduce the experimentally observed profiles only if a sensitive balance between the different temperature dependencies is obeyed. These investigations, therefore, yield new information about the equilibrium concentration and diffusion of silicon interstitials. A best set of parameters is presented. The time constant of the kick-out process is quantified for the first time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00343418
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  • 99
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    Electronic Resource
    Ion scattering spectroscopy and scanning tunneling microscopy: A powerful combination for surface structure analysis (1991)
    Springer
    Applied physics 53 (1991), S. 388-402 
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    ISSN: 1432-0630
    Keywords: 68.35 ; 61.16 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Low-energy ion backscattering and scanning tunneling microscopy (STM) have been used in combination to get better insight into the field of surface crystallography. The synergic effectiveness resulting from the complementing character of the two methods has been exemplified at clean NiAl(111) and for oxygen and nitrogen adsorption on Cu(110). The position of the atom cores is accessible by the low-energy noble gas impact collision ion scattering spectroscopy with neutral detection (NICISS). As a technique averaging over a macroscopic area of the sample, NICISS is better suited to supply information on features of completely developed phases, either on clean or adsorbate saturated surfaces. Additional information, on the other hand, can be gained by scanning tunneling microscopy (STM), which as a powerful local probe may be used to image surfaces with atomic resolution and to monitor defects, steps and the growth kinetics of e.g. adsorption-induced phase changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348151
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  • 100
    Electronic Resource
    Electronic Resource
    TEM characterization of yttrium silicide layers synthesized by ion implantation (1992)
    Springer
    Applied physics 54 (1992), S. 527-532 
    Details
    ISSN: 1432-0630
    Keywords: 61.10 ; 61.70 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The structure of Si implanted with high doses of yttrium has been investigated by varying implantation doses and energies. As implantation doses increase into the low 1017 cm−2 range, silicide precipitates form. The precipitates are thin and long and lie parallel to {111} planes in the Si matrix. As dopant concentrations increase, the precipitates themselves become more equiaxed, aspect ratios decrease, and precipitates densities increase until the precipitates coalesce to form a continuous buried layer of yttrium silicide within the Si matrix. The layer thickness is relatively uneven. As implant doses increase to ∼ 4×1017 cm−2, the layer thicknesses become more uniform although there are still defects present. As the implant doses increase further, the precipitate bands on either side of the continuous layer decrease due to gettering of yttrium to the layer. As the energy of the implant is increased, the appearance of the sample is similar to that of the lower energy implants except that the layer is buried deeper in the Si matrix. Observations of the silicide are consistent with its having the AlB2 structure with ordered vacancies on the Si sublattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324334
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