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Pulsed electron-beam annealing of high-dose arsenic implanted silicon

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Abstract

The effects of pulsed electron-beam annealing of high-dose As implanted {111} Si single crystals has been studied. The depth distributions and lattice location of the As atoms were obtained using MeV4He+ backscattering and channeling technique. The implantation energy was 100 keV with a total dose of 3.5·1016/cm2. Above the threshold energy of 0.9 J/cm2 the single-crystal transition was observed with about 95% of the As atoms on substitutional lattice sites. This leads to an As concentration of 2·1021/cm3 which was demonstrated to be a metastable one.

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References

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  1. A. Turos

    Present address: Institute of Nuclear Research, Warsaw, Poland

Authors and Affiliations

  1. Institut für Angewandte Kernphysik I, Kernforschungszentrum Karlsruhe, D-7500, Karlsruhe, Fed. Rep. Germany

    A. Turos & J. Geerk

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  1. A. Turos
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  2. J. Geerk
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Turos, A., Geerk, J. Pulsed electron-beam annealing of high-dose arsenic implanted silicon. Appl. Phys. 22, 385–388 (1980). https://doi.org/10.1007/BF00901061

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  • DOI: https://doi.org/10.1007/BF00901061

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