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Irradiation-induced atomic defects in SiC studied by positron annihilation

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Abstract

The present paper reports on positron lifetime measurements on atomic defects in SiC after low-temperature (80 K) electron irradiation of low (0.47 MeV) and high (2.5 MeV) electron energies and doses from 1.8×1017 to 1.9×1019 e/cm2 as well as after subsequent isochronal annealing up to 1900 K. For these studies the single crystals of nitrogen doped (2–3×1018 cm−3) SiC grown by a modified Lely technique with hexagonal structure (6H polytype) were used.

According to the positron lifetime measurements, very different types of vacancy-like positron traps are introducted after irradiation with electrons of either low or high energy. The formation of defect agglomerates and their decay at high temperatures is studied during isochronal annealing and related to earlier studies.

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Authors and Affiliations

  1. Institute of Solid State Chemistry, Russian Academy of Sciences, Pervomaiskaya, 91, GSP-145, 620219, Ekaterinburg, Russia

    A. A. Rempel

  2. Institute für theoretische und angewandte Physik, Universität Stuttgart, Pfaffenwaldring 57/VI, D-70550, Stuttgart, Germany

    H. -E. Schaefer

Authors
  1. A. A. Rempel
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  2. H. -E. Schaefer
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Rempel, A.A., Schaefer, H.E. Irradiation-induced atomic defects in SiC studied by positron annihilation. Appl. Phys. A 61, 51–53 (1995). https://doi.org/10.1007/BF01538210

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  • DOI: https://doi.org/10.1007/BF01538210

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