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  • Articles  (45,267)
  • Chemistry  (45,059)
  • 42.55  (108)
  • 72.20  (100)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (45,267)
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  • Articles  (45,267)
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  • 1
    Electronic Resource
    Electronic Resource
    Electron and hole traps in N-GaAs crystals (1976)
    Springer
    Applied physics 11 (1976), S. 187-189 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Deep traps were measured and their electronic and optical properties were determined by junction capacitance techniques in n-GaAs crystals grown by different methods. Four electron-traps and four hole-traps were detected. An electron trap was not observed in LPE wafers. A hole trap at 0.45 eV above the top of the valence band was detected in all wafers measured here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00920603
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  • 2
    Electronic Resource
    Electronic Resource
    Performance of NdLa pentaphosphate laser pumped by nanosecond pulses (1977)
    Springer
    Applied physics 13 (1977), S. 55-58 
    Details
    ISSN: 1432-0630
    Keywords: 42.55 ; 78.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract NdxLa1−xP5O14 (0.25≦x≦1) single crystals, placed within a confocal optical resonator, were pumped with ruby laser fundamental and second-harmonic nanosecond pulses. In both cases laser oscillations at 1.05 μm exceeding in duration many times the pumping pulse were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00890721
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  • 3
    Electronic Resource
    Electronic Resource
    Optically pumped FIR-laser with variable Fabry-Perot output coupler (1977)
    Springer
    Applied physics 13 (1977), S. 383-385 
    Details
    ISSN: 1432-0630
    Keywords: 42.55 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An optically pumped FIR laser was operated with a copper mesh Fabr-Perot output coupler. With this device a Gaussian output beam was obtained andthe degree of coupling could be varied continuously, thus allowing optimum coupling. From the measured properties of the wire mesches grains of two FIR laser lines are calculated and the saturation intensities estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882614
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  • 4
    Electronic Resource
    Electronic Resource
    Argon laser with wall stabilized transverse discharge (1977)
    Springer
    Applied physics 14 (1977), S. 193-197 
    Details
    ISSN: 1432-0630
    Keywords: 42.55 ; 52
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Planar and cylindrical discharges for argon lasers are compared by plasmatheoretical calculations. The maximum laser output power available in the two arrangements is computed in dependence of various parameters neglecting saturation mechanisms. A transverse discharge arrangement confining the positive column by two parallel walls is described and experimental laser threshold values for the current and pressure are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00883089
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  • 5
    Electronic Resource
    Electronic Resource
    Nonlinear absorption spectroscopy of the ethane molecule (1977)
    Springer
    Applied physics 14 (1977), S. 343-350 
    Details
    ISSN: 1432-0630
    Keywords: 33 ; 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract By means of nonlinear absorption spectroscopy data necessary for the interpretation of molecular spectra can be obtained in such spectral regions, where conventional spectroscopic methods yield only a quasi-continuous absorption curve. Using a Zeeman-tuned He−Ne laser at the wavelength of 3.39μm we have measured significant differences in the intensity and temperature behaviour for several ethane absorption lines, the analysis of which made possible a preliminary qualitative assignment of these lines.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00883437
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  • 6
    Electronic Resource
    Electronic Resource
    A high-power single-mode cw dye ring laser (1977)
    Springer
    Applied physics 14 (1977), S. 377-380 
    Details
    ISSN: 1432-0630
    Keywords: 42.55 ; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Due to spatial hole burning, standing-wave dye lasers require a large amount of selectivity inside the cavity for single-mode operation. The output power of these lasers is limited by losses caused by the frequency selecting elements. In a travelling-wave laser, on the other hand, spatial hole burning does not exist, thereby eliminating the need for high selectivity. A travelling-wave cw dye laser was realized by unidirectional operation of a ring laser, yielding single mode output powers of 1.2 W at 595 nm and of 55 mW in the UV-region with intracavity frequency doubling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00883442
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  • 7
    Electronic Resource
    Electronic Resource
    High-power argon-ion laser with titanium covered beryllia discharge tube (1978)
    Springer
    Applied physics 15 (1978), S. 229-232 
    Details
    ISSN: 1432-0630
    Keywords: 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new type of discharge tube for high-power argon-ion lasers constructed of a segmented metal-ceramic compound system is described. Up to date, the system has been operating for 1500 h without failure. The maximum cw output is 140 W, limited by the destruction of the mirrors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00928214
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  • 8
    Electronic Resource
    Electronic Resource
    Tunable UV-radiation by stimulated Raman scattering in hydrogen (1978)
    Springer
    Applied physics 16 (1978), S. 151-154 
    Details
    ISSN: 1432-0630
    Keywords: 42.65 ; 42.55 ; 33
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We observed tunable UV radiation down to 175 nm by SRS of the output of a frequency-doubled dye laser in H2. The high power output of the 4th anti-Stokes to 5th Stokes line generated by the frequency doubled dye laser and the 8th anti-Stokes to 3rd Stokes line generated by the undoubled dye laser represents a broadly tunable coherent radiation source between 189 nm and 2064 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00930379
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  • 9
    Electronic Resource
    Electronic Resource
    Dynamic mode interaction in multi-mode laser diodes (1978)
    Springer
    Applied physics 16 (1978), S. 155-158 
    Details
    ISSN: 1432-0630
    Keywords: 42.55 ; 78.60 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Dynamic characteristics of laser diodes are numerically calculated on multi-mode rate equations, including spatial relaxing interaction causing mode competitions or jumps. It is revealed that the interaction effect is classified into three cases [“independent (or inhomogeneous)”, “competition (or intermediate)”, and “monopoly (or ideally homogeneous)”], that an optimum relaxing coefficient value exists to minimize relaxation oscillations in rise and decay transients, and that the optimum value is related to the relaxation period. Calculated results are discussed in comparison with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00930380
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  • 10
    Electronic Resource
    Electronic Resource
    Polarization properties of a single-mode gas laser in transverse magnetic fields (1978)
    Springer
    Applied physics 17 (1978), S. 257-267 
    Details
    ISSN: 1432-0630
    Keywords: 42.55 ; 32.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effect of transversally applied magnetic fields on the polarization behavior of a single-mode gas laser is theoretically investigated, stressing the importance of the additivity of respective contributions influencing the time evolution of polarization parameters. By adding a new element to the existing theory, namely the contribution of magnetic-field-free regions in the active medium, and by considering the relatively large effects that small cavity anisotropies can cause, several apparent discrepancies between experiments and existing theory are resolved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886954
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  • 11
    Electronic Resource
    Electronic Resource
    Measurement of the diameter of a laser beam (1978)
    Springer
    Applied physics 17 (1978), S. 303-307 
    Details
    ISSN: 1432-0630
    Keywords: 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new and simple technique for measuring the effective diameter of a laser beam used in material processing is described. The time for the temperature of a spot heated by the laser beam to rise to 90% of equilibrium is compared with that predicted theoretically for a Gaussian TEM00 laser beam. A Gaussian beam diameter equivalent is thus deduced. This calculated diameter is of particular relevance to applications where the laser is used as a heat source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886959
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  • 12
    Electronic Resource
    Electronic Resource
    Cw oscillation at 1.05 and 1.32 μm of LiNd(PO3)4 lasers in external resonator and in resonator with directly applied mirrors (1979)
    Springer
    Applied physics 20 (1979), S. 329-334 
    Details
    ISSN: 1432-0630
    Keywords: 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The room temperature cw oscillation at 1.05 and 1.32 μm of lithium neodymium tetraphosphate [LiNd(PO3)4, LNP] lasers in an external resonator and, for the first time, also in a Fabry-Perot resonator with directly applied mirrors is reported. The growth and fluorescence properties of the LNP crystals are briefly described. Laser parameters such as threshold pump power, output power, differential efficiency, optical gain, emission cross section and laser modes are both measured and calculated. Laser experiments show the threshold pump power to be lower for 1.05 μm than for 1.32 μm emission because of the smaller emission cross section; the pump power density is lower for the external resonator than for the Fabry-Perot resonator because of its higher mode losses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00895005
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  • 13
    Electronic Resource
    Electronic Resource
    Nonstationary intracavity stimulated raman scattering by polaritons (1978)
    Springer
    Applied physics 17 (1978), S. 393-400 
    Details
    ISSN: 1432-0630
    Keywords: 42.55 ; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Stimulated Raman scattering by polaritons when employing a nonlinear crystal inside the cavity of the laser with Q-switching and locked to fundamental frequency was theoretically studied. The equations were formulated describing the dynamics of the fundamental, Stokes and polariton waves under the assumption of instant Q-switching and uniformity of radiation except in the longitudinal direction. Numerical solutions of the equations were found and analysed. We demonstrate the influence, on generation characteristics, of the most important parameters, such as the effective nonlinearity, the initial level of population inversion, the feedback of the Stokes wave and the group mismatch between a Stokes and a pump wave. Optimum generation conditions are determined. Possibilities of the method are discussed for the generation of a) giant pulses which are controllable with regard to carrier frequency and duration but are unachievable with other methods, b) Stokes pulses of very small duration and high energy having sharp trailing edges, and c) analogous polariton pulses in the middle and far infrared range. The generation using a number of polariton branches in LiNbO3 was considered as an example. Calculations are in qualitative agreement with experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886211
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  • 14
    Electronic Resource
    Electronic Resource
    Polarization spectroscopy with ultrashort light pulses (1979)
    Springer
    Applied physics 18 (1979), S. 257-260 
    Details
    ISSN: 1432-0630
    Keywords: 32 ; 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have demonstrated the feasibility of Doppler-free polarization spectroscopy with a train of ultrashort pulses from a synchronously pumped mode-locked dye laser. The sensitivity of the method is compared with saturation spectroscopy with a single-mode laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885511
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  • 15
    Electronic Resource
    Electronic Resource
    Field emission of monoenergetic spin-polarized electrons (1977)
    Springer
    Applied physics 14 (1977), S. 149-153 
    Details
    ISSN: 1432-0630
    Keywords: 79.40 ; 75.30 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Field emission from a tungsten tip, covered by a layer of crystallized ferromagnetic europium sulfide, leads to an electron beam with a current of 10−8 A, an energy width of less than 100 meV, and a spin polarization of about 0.85 at a tip temperature of 9 K. Proper annealing of the EuS layer is crucial.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00883082
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  • 16
    Electronic Resource
    Electronic Resource
    Effect of laser dye deterioration on performance (1977)
    Springer
    Applied physics 14 (1977), S. 199-203 
    Details
    ISSN: 1432-0630
    Keywords: 42.55 ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Loss of gain in a dye medium as a result of decomposition by pump photons is considered in terms of disappearance of dye molecules and the appearance of a new, single chemical product having absorption in the fluorescence band. The cases of small signal gain and saturated gain are applied to a single pass through a transversely excited amplifier. Loss of output, defined as “quantum yield of laser deterioration”,Q L , is related to the true quantum yield of molecular destruction of the dye,Q M , and other known parameters. For the experimentally common, saturated gain condition, the smallestQ L can be isQ M , which requires a photochemically bleachable dye with high gain, preferably at high concentration, in a long cavity, operating at high injection and pumping fluxes. Reversing these conditions, the highest valueQ L can be, compared withQ M , is unrestricted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00883090
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  • 17
    Electronic Resource
    Electronic Resource
    Properties and current-voltage characteristics of discharges in waveguide gas lasers (1977)
    Springer
    Applied physics 14 (1977), S. 277-282 
    Details
    ISSN: 1432-0630
    Keywords: 42.55 ; 52
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The paper deals with the properties andI-V characteristics of discharges in narrow capillaries used, for example, for He−Ne waveguide lasers. It has been observed that discharges in He−Ne waveguide lasers are unstable because of the strongly falling characteristic. A theory is presented which assumes that at low currents wall charges restrict the positive column to a narrow plasma channel and are the main reason for the observed falling characteristic. A numerical evaluation for helium gives results which agree well with experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882732
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  • 18
    Electronic Resource
    Electronic Resource
    Spectral, fluorescent, photochemical and laser properties of some organic compound vapors (1980)
    Springer
    Applied physics 23 (1980), S. 83-87 
    Details
    ISSN: 1432-0630
    Keywords: 33 ; 82.50 ; 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Absorption and fluorescence spectra of rarefied vapors ofp-terphenyl, 1,4-bis-[2(5-phenyloxazolyl)]-benzene, 2,5-diphenyl-1,3,4-oxadiazole, 2,5-diphenyl-1,3-oxazole, 2,5-diphenylfuran are measured. Extinction coefficients, quantum yields of fluorescence and one-photon decomposition of molecules are determined for vapors excited by pulsed laser radiation at 266 and 355 nm in the temperature range from 200 to 400°C. It is shown that for all cases studied the one-photon decomposition is only a small part of the total quantum yield of the radiationless deactivation of the fluorescent state. Laser action has, for the first time, been obtained in 2,5-diphenylfuran vapor at 356 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899574
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  • 19
    Electronic Resource
    Electronic Resource
    New TEA-lasers based onD′→A′ transitions in halogen monofluoride compounds: ClF (284.4 nm), BrF (354.5 nm), IF (490.8 nm) (1980)
    Springer
    Applied physics 23 (1980), S. 283-287 
    Details
    ISSN: 1432-0630
    Keywords: 42.55 ; 42.80 ; 33
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract As an outcome of a systematic study of excitation kinetics and fluorescence spectra concerning theD′(3π2u )→A′(3π2g ) transitions in homonuclear diatomic halogens and corresponding transitions in interhalogen molecules [1], this paper describes, for the first time, TEA laser action in the three halogen monofluorides ClF, BrF, and IF. Output energies in the mJ range were demonstrated in a fast TEA discharge arrangement at the wavelengths of 284.4, 354.5, and 490.8 nm for ClF, BrF, and IF, respectively. The results suggest parameter scalability and wavelength tunability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00914912
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  • 20
    Electronic Resource
    Electronic Resource
    CW HCN laser gain in a hollow dielectric rectangular cross-section discharge tube (1979)
    Springer
    Applied physics 19 (1979), S. 359-361 
    Details
    ISSN: 1432-0630
    Keywords: 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper describes a 1 m-long CW HCN discharge laser with a hollow dielectric rectangular discharge tube of 5×20 cm2 cross-section. For optimum working conditions, the characteristics of the amplifying medium have been made constant over the cross-section, by using an additional magnetic field. Then, the unsaturated gain for the 337 μm line is 6.8% m−1. It is shown to be dependent on the smaller dimension of the cross-section rather than on the other dimension. By using the tube as a waveguide, laser output power of 1 Watt might be obtained with a discharge length of 4 m, instead of the 12m-long discharge required to get the same output power from a cylindrical waveguide laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900481
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  • 21
    Electronic Resource
    Electronic Resource
    Electron mobility in compensated VPE GaAs films (1980)
    Springer
    Applied physics 23 (1980), S. 37-40 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electron Hall mobilities were measured on a series of intentionally compensated vapor phase epitaxy (VPE) GaAs layers. Using Sn and Zn as dopants, compensation ratiosK=(ND+NA)/(ND-NA) as high as 50 were obtained. Already for samples with the lowestK values the 300 K mobilities are higher than the 77 K values. In the range 20〈T〈100 [K] the data may be represented by μ∼T α with α increasing from 0.6 to 1.1 with compensation. The experimental μ values are smaller than those predicted from current models in all cases. It appears that scattering at ionized impurities is the dominant process also at temperatures well above 77 K, and that this scattering process is quantitatively underestimated in current models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899568
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  • 22
    Electronic Resource
    Electronic Resource
    Investigation of the spatial coherence of a laser beam by a laser-induced grating method (1980)
    Springer
    Applied physics 23 (1980), S. 299-302 
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    ISSN: 1432-0630
    Keywords: 42.30 ; 42.55 ; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The spatial coherence function |Γ(s)| of ruby laser pulses has been measured by self-diffraction at a laser-induced grating depending on the distances between two points in the beam profile. The spatial coherence of the laser beam was changed by operating the laser in the fundamental transverse mode, in a transverse multimode and by applying different pump powers. The degree of spatial coherence was experimentally found to be a Gaussian, as described by the Collett-Wolf model. The new method for measuring the spatial coherence function |Γ(s)| is described and possible improvements are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00914915
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  • 23
    Electronic Resource
    Electronic Resource
    Two-wavelength dye-laser operation using a reflecting Fizeau interferometer (1981)
    Springer
    Applied physics 24 (1981), S. 7-9 
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    ISSN: 1432-0630
    Keywords: 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Newly found reflection properties of the Fizeau wedge interferometer are shown to be of particular advantage in obtaining efficient multi-wavelength operation of dye lasers. Use is made of the fact that the reflecting Fizeau wedge can ensure at once a selective feedback for a given wavelength and quasi-total reflection in an other direction for all other wavelengths. Fully independent tuning of two 0.02 nm lines is obtained with short pulse (2 ns) N2-laser pumping using a single Fizeau wedge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900388
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  • 24
    Electronic Resource
    Electronic Resource
    Bistability of a CO2 laser with SF6 intracavity as an absorber: Transient effects (1981)
    Springer
    Applied physics 24 (1981), S. 45-48 
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    ISSN: 1432-0630
    Keywords: 42.55 ; 42.65 ; 64
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We investigated time-dependent effects related to the bistable operation of a CO2 laser with an intracavity nonlinear absorber (SF6). The response of the system to small perturbations was sensitively dependent on the operating laser line [P(12)→P(30)] of the 10.6 μm band. The narrow bistable region forP(12), due to a very narrow hysteresis loop, can be effectively utilized for optical switching, because of its pronounced sensitivity to variations in operational parameters. The maximum admissable beam blocking time (intracavity) for spontaneous return to lasing was measured forP(16), for a range of absorber pressures. This τm is related to the relaxation time of the upper level in the absorber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900396
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  • 25
    Electronic Resource
    Electronic Resource
    Impact ionisation inn-Type InSb at 77 K (1983)
    Springer
    Applied physics 30 (1983), S. 151-160 
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    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Time dependent generation rate measurements for InSb at 77 K are presented. The direct results are corrected for recombination terms and care is taken to avoid complications due to the pinch effect under avalanche conditions. The results are compared with various theories, and it is shown that an improved version of Dumke's avalanche theory yields a very good description. A simple extension to Shockley's lucky electron theory is presented which also gives good results. It is concluded that only the most energetic electrons, with energies near the threshold energy, contribute significantly to the avalanche process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620534
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  • 26
    Electronic Resource
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    High-field transport properties of In0.765Ga0.235As0.5P0.5 (1983)
    Springer
    Applied physics 32 (1983), S. 39-43 
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    ISSN: 1432-0630
    Keywords: 72 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Monte-Carlo results on the velocity-field characteristics, ac diffusion-constant and thermal-noise voltages are presented for In0.765Ga0.235As0.5P0.5 at 300K. Recently available values of physical constants have been used in the calculations. The values of diffusion constants are close to those of InP but the thermal noise voltages are found to increase faster with the field. The peak velocity is 1.9 × 107 cm/s and the threshold field for negative differential mobility is about 6 kV/cm.
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    High electric-field hall effect measurements onn-type InSb at 77 K (1982)
    Springer
    Applied physics 27 (1982), S. 107-120 
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    ISSN: 1432-0630
    Keywords: 72.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Pulsed Hall-effect experiments onn-type InSb at 77 K, with nanosecond time resolution, at magnetic inductions down to 2 mT and for electric field strengths up into the avalanche regime are reported. Results on mobility are compared with previous experimental data and various theoretical calculations. For the first time also results on the scattering factor as a function of electric field are given. A curious time dependent behaviour of the transverse voltage under avalanche conditions is reported. Along with the development of the avalanche the transverse voltage decreases and may even change sign. This phenomenon is qualitatively explained in terms of the magnetoconcentration effect and the change of contact properties under avalanche conditions.
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  • 28
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    A SOGICON type instability in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 145-148 
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    ISSN: 1432-0630
    Keywords: 85.30 ; 72.20
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    Notes: Abstract A current oscillation phenomenon in SOGICON type Si device fabricated by the use of a planar process is studied. The oscillation is generated in the region between anode and notch which is located at the center on the sample. A considerably high electric field is observed in the notch region. Considering the hot-electron effect due to the high electric field, the mechanism underlying the current oscillation is discussed.
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  • 29
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    Contact versus bulk noise in resistive layers (1985)
    Springer
    Applied physics 36 (1985), S. 183-187 
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    ISSN: 1432-0630
    Keywords: 02 ; 72.20 ; 72.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract General formulae are derived to calculate the noise generated by a resistor of arbitrary shape. Contact and bulk noise have been taken into account. By calculating a particular example it will be shown that the influence of the contact and bulk noise can be changed by varying the resistor's shape.
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  • 30
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    Dielectric relaxation and AC conduction of an AgTlSe2 semiconductor in the solid and liquid states (1982)
    Springer
    Applied physics 29 (1982), S. 39-44 
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    ISSN: 1432-0630
    Keywords: 77 ; 72.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the dielectric properties of AgTlSe2 in the solid and liquid states were carried out in a wide range of frequencies and temperatures. The material displayed dielectric dispersion, and a loss peak was observed. Cole-Cole diagrams have been used to determine the distribution parameter (a) and the molecular relaxation time (Τ). The process of dielectric relaxation (loss) and ac conduction was attributed to the correlated barrier hopping model suggested by Elliott for amorphous solids, where two carriers simultaneously hop over a barrier between charged defectD + andD − states.
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  • 31
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    Position dependence of average electron velocity in a submicrometer GaAs channel (1985)
    Springer
    Applied physics 38 (1985), S. 57-58 
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    Keywords: 72 ; 72.20
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    Notes: Abstract The Monte Carlo method has been applied to obtain the average electron velocity at different positions of a submicrometer GaAs channel in the presence of a position independent electric field. Velocity-distance curves are presented for channel lengths of 0.1, 0.2, and 0.5 μm and for lattice temperatures of 300 and 77 K. The curves show significant effects of collisions and boundary conditions.
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  • 32
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    StimulatedC'-emission of Ag−-centers in KI, RbBr, and CsBr (1985)
    Springer
    Applied physics 38 (1985), S. 61-65 
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    ISSN: 1432-0630
    Keywords: 42.55 ; 78.55
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    Notes: Abstract Stimulated emission around 335 nm in theC' emission band of Ag− centers in KI, RbBr, and CsBr has been observed at low temperatures and the gain coefficient in the band maximum has been determined. Laser action has been demonstrated using a simple broad band cavity.
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  • 33
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    Hole initiated impact ionization in indium antimonide (1985)
    Springer
    Applied physics 38 (1985), S. 145-149 
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    Keywords: 72.20
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    Notes: Abstract The impact ionization in p-type indium antimonide at 77 K was investigated both experimentally and theoretically. The dc pulse measurements with the time resolution of 50 ps and the high-field Hall measurements produced clear evidence that the impact ionization inp-InSb is initiated by equilibrium holes. The calculated hole generation rate gives good agreement with the experimental results.
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  • 34
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    On the origin of the hot-electron instabilities inn-InSb at crossed electric and magnetic fields (1986)
    Springer
    Applied physics 39 (1986), S. 135-139 
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    Keywords: 72.20
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    Notes: Abstract Coherent current oscillations with frequencies of several hundreds of megahertz and microwave generation at frequencies up to 40 GHz were investigated in then-InSb samples subjected to crossed electric and magnetic fields. They are shown as being caused by electric field redistribution and negative differential mobility in high-field regions.
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  • 35
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    The pre-exponential factor of the escape probability in thermally stimulated processes (1987)
    Springer
    Applied physics 43 (1987), S. 29-35 
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    ISSN: 1432-0630
    Keywords: 71 ; 72.20 ; 78
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    Notes: Abstract The pre-exponential factor of the transition probability of a trapped charge carrier into an excited state is evaluated from two different approaches. The semi-classical treatment based on a thermodynamical concept involves the calculation of the vibrational entropy change from the partition sum. The quantum-mechanical treatment deals with non-radiative transitions due to electron-phonon coupling. The factor is found to be explicitely dependent on both the temperature and the lattice vibration frequencies represented by a single Einstein oscillator. In addition, the results from different concepts show similar behaviour. As a consequence the effect of lattice vibrations on the position as well as on the shape of glow peaks in thermally stimulated measurements are investigated on a simple phenomenological base. The analysis of some experimental results can be performed in accordance with the theoretical predictions.
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  • 36
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    Microwave dielectric properties of Ti4+/MgO and Ni2+/MgO (1985)
    Springer
    Applied physics 36 (1985), S. 63-65 
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    Keywords: 66 ; 72.20 ; 77.20
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    Notes: Abstract The dielectric properties of titanium-doped magnesium oxide (Ti/MgO) and nickel-doped magnesium oxide (Ni/MgO) single crystals have been measured in the range of temperature from 300 to 450 K at the microwave frequency of 9.31 GHz. For both crystals the dielectric properties are found similar. From the conductivity data, the activation energy in the measured temperature region has been estimated to be 0.15 eV. The values of the temperature dependence (ε′−1)−1(ε′+2)−1 (∂ε′/∂T) p have been calculated. The data confirms the Bosmann and Havinga postulate that, for materials in which the dielectric constant;ε′ is less than 20 the temperature dependence should be positive.
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  • 37
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    Quantum mechanical treatment of the escape probability from traps in thermally stimulated processes (1985)
    Springer
    Applied physics 37 (1985), S. 165-170 
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    ISSN: 1432-0630
    Keywords: 71 ; 72.20 ; 78
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    Notes: Abstract In thermally stimulated processes the calculation of the transition probability of a trapped charge carrier into an excited state is based on an atomistic model involving multiphonon processes. The displacement of lattice particles from equilibrium positions gives rise to electron-lattice interaction. As a result the temperature dependence is found to be of non-Arrhenius type except in some limiting cases. The difference of the probabilities for non-radiative transitions, as calculated by the quantum mechanical and by semi-classical methods, is discussed. Thermoluminescence proves to be an example for a non-radiative transition controlled phenomenon and the calculated glow curve differs appreciably from one model to the other. As a result the glow curves calculated in the quantum mechanical concept exhibit shapes which are broadened and shifted to lower temperatures, as compared to that calculated in the semi-classical concept. In turn, the activation energy, as determined by the initial rise method or the method of heating rate variation, is found to be much smaller in the quantum mechanical case.
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    Electrophotographic multi-layer plates based on vacuum-evaporated cadmium sulphide and polyethylene (1985)
    Springer
    Applied physics 37 (1985), S. 243-246 
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    ISSN: 1432-0630
    Keywords: 68.20 ; 72.20
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    Notes: Abstract A new possibility for using vacuum-evaporated CdS thin films in combination with a suitable organic polymer (e.g., polyethylene) in electrophotography is described. The advantages of a multi-layer type sample are discussed in terms of deep bulk trapping of the photogenerated free carriers, injected in the polymer. A formula is derived, which links the initial rate of surface potential decay with the trapping range in unit fieldμ 0τ. Using it and the data for the initial rates of surface potential decay of two samples (a double-layer and a multi-layer one), the trapping range for the vacuum-evaporated polyethylene films is determined.
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  • 39
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    Hydrogenated amorphous silicon films obtained by a low pressure dc glow discharge (1988)
    Springer
    Applied physics 46 (1988), S. 207-213 
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    Keywords: 61.40 ; 72.20 ; 78.65
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    Notes: Abstract Films of a-Si: H have been deposited by means of a dc hot cathode discharge of SiH4 with electrostatic confinement at a pressure as low as 0.4 Pa. The plasma used is quite quiescent as has been observed by means of reproducible Langmuir probe measurements. Substrates have been placed at different locations in between the electrodes, some of them facing the anode and the others facing the cathode. Films deposited on substrates facing the cathode present a granular, non-columnar, structure, an IR spectrum with only SiH absorption peaks, and a very low photoresponse. Films deposited on substrates facing the anode have a similar IR spectrum but are homogeneous, have lower hydrogen content, and present a high photoresponse. The optical absorption coefficientα shows in all samples theαnE=C(E−E0) x behaviour, but with exponentx=3 and notx=2 as is usually considered in a-Si∶H.
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    Electrical properties of the AgTlSe2 semiconductor in the liquid state (1982)
    Springer
    Applied physics 28 (1982), S. 109-111 
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    Keywords: 72.20
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    Notes: Abstract The electrical conductivity and thermoelectric power of AgTlSe2 have been investigated as a function of temperature from 390° C up to 590° C. The experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors [12]. Positive thermoelectric power suggests a large predominance of holes in electrical conduction. It appears that the conduction is due to holes in localized states near the band edge.
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  • 41
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    The effect of H-dilution on the transport properties of doped a-Si1−x Ge x : H alloys (1989)
    Springer
    Applied physics 49 (1989), S. 165-169 
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    Keywords: 72.20 ; 72.40 ; 73.60
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    Notes: Abstract This paper is concerned with the optimization of growth conditions for a-Si1-x Ge x :H alloys. It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes. It is further shown that the beneficial effects of H-dilution are most pronounced in alloys with comparable densities of Si and Ge.
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  • 42
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    AC electrical behaviour of a Pb2CrO5 ceramic sample with surface electrodes (1989)
    Springer
    Applied physics 49 (1989), S. 665-670 
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    Keywords: 72.20 ; 72.40 ; 72.80J ; 77.40
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    Notes: Abstract ac measurements (1 Hz–10 kHz) have been carried out on a Pb2CrO5 ceramic sample (with surface electrodes) at room temperature as a function of voltage and intensity of visible light illuminating the sample. Cole-Cole complex impedance plots show that the electrical behaviour of Pb2CrO5 is strongly modified when the sample is illuminated. The bulk conductance of the sample is found to increase with increasing light intensity indicating that this dielectric material becomes semiconducting due to the photogeneration of free charge carriers in the conduction band. The dielectric constant of the sample is enhanced by illumination probably due to light-dependent space charge effects in a manner where the dielectric's relaxation time (τ=RC=0.7 ms) remains constant with light intensity. On the other hand, both the bulk conductance and geometrical capacitance of the sample have been found to be almost independent of the applied voltage.
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    Synthesis of n-type semiconducting diamond film using diphosphorus pentaoxide as the doping source (1990)
    Springer
    Applied physics 51 (1990), S. 344-346 
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    Keywords: 68.55 ; 73.60 ; 72.20
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    Notes: Abstract An n-type semiconducting diamond film has been synthesized by the hot filament CVD method using diphosphorus pentaoxide as the doping source. The obtained film was identified as polycrystalline diamond containing few sp2 components by means of several methods including Raman spectroscopy. From measurements of the Hall effect and the Seebeck effect, the film was found to be an n-type semiconductor.
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    Autocompensation doping in light-soaked and in radiation-damaged a-Si:H (1991)
    Springer
    Applied physics 52 (1991), S. 335-338 
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    Keywords: 61.40 ; 61.80 ; 72.20
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    Notes: Abstract n-type a-Si:H films have been irradiated with light, electrons, protons and heavy ion beams. It is shown that the non-thermal creation of dangling-bond defects activates significant densities of previously inactive phosphorus dopants. The relevance of these results is discussed with respect to equilibration phenomena in doped material and with respect to degradation phenomena in a-Si:H solar cells.
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    Switching and memory effects in semiconducting chalcogenide glasses Bi29Tl35Se36 (1991)
    Springer
    Applied physics 53 (1991), S. 218-221 
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    Keywords: 72.20 ; 85.30
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    Notes: Abstract The switching effect in bulk semiconductor glasses Bi29Tl35Se36 was investigated. The switching (threshold) voltage V th varies exponentially with the temperatures. Moreover V th was found to increase linearly with thickness; annealing of the samples improves the I–V characteristics and V th decreases with the annealing temperature. The experimental results were attributed to an electrothermal mechanism involving joule heating of a current channel.
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    Accumulation and annealing of implantation damage in a-Si:H (1991)
    Springer
    Applied physics 53 (1991), S. 235-240 
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    Keywords: 61.40 ; 61.80 ; 72.20
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    Notes: Abstract Hydrogenated amorphous silicon (a-Si:H) films have been irradiated with H+, B+, P+, and Ar+ ion beams. The accumulation and the annealing of irradiation-induced defects has been investigated through a series of electronic transport and PDS measurements. We find that for all projectiles damage accumulation is dominated by atomic displacement collisions with the damage saturating for energy transfers in excess of about 10 eV/target atom. Annealing at elevated temperatures causes the conductivity of doped and irradiated a-Si:H films to increase according to stretched exponential decay curves. All annealing parameters derivable from such fits scale with the energy originally dissipated into atomic displacement collisions. For energy transfers up to 10 eV/target atom the activation energy for annealing increases up to a saturation value and, at the same time, an increasing fraction of the irradiation-induced defects becomes stable against annealing at moderate temperatures (T a〈250° C). We discuss these results with respect to damage accumulation data in crystalline silicon (c-Si) and with regard to the annealing of metastable defects in a-Si:H.
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    Femtosecond excimer-laser-induced structure formation on polymers (1994)
    Springer
    Applied physics 59 (1994), S. 289-293 
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    Keywords: 42.55 ; 81.40 ; 82.65
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    Notes: Abstract Structure formation upon 500 fs 248 nm KrF-laser irradiation of PolyEthylene Terephthalate (PET) and PolyImide (PI) has been investigated. The results obtained with fs pulses have been compared to those with ns pulses.
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    Solid ionic conductor/semiconductor junctions for chemical sensors (1993)
    Springer
    Applied physics 57 (1993), S. 37-43 
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    Keywords: 66.30 ; 72.20 ; 73.20 ; 73.30 ; 85.80
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    Notes: Abstract The potential drop at solid ionic conductor/semiconductor contacts responds to partial pressure changes of gases since the Fermi level of the semiconductor depends on the adsorbed species and equilibrates with that of the ionic conductor. In an alternative consideration, the semiconductor acts as a catalyst for the reaction of the mobile ions of the solid ionic conductor with the adsorbed species. The junction is employed as a chemical sensor for the detection of CO2 by using NASICON as solid electrolyte and doped SnO2 as semiconductor. The device is applicable even at room temperature with fast response time. Mechanisms of the response of the junction to gases are discussed in detail. The principle of employing solid ionic conductor/semiconductor junctions for sensors is in general applicable for many gases.
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    Hall mobility of undoped n-type conducting strontium titanate single crystals between 19 K and 1373 K (1995)
    Springer
    Applied physics 61 (1995), S. 389-395 
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    Keywords: 72.20
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    Notes: Abstract The Hall mobility of undoped n-type conducting SrTiO3 single crystals was investigated in a temperature range between 19 and 1373 K. Field calculations were used to estimate the influence of sample shape and electrode geometry on the measured values. Between 19 and 353 K samples, which were quenched under reducing conditions, show an impurity scattering behavior at low temperature and high carrier concentrations and a phonon scattering mechanism at room temperature. In this temperature region, no carrier-density-dependent mobility was found. In conjunction with measurements of the mass difference before and after reoxidation, the oxygen deficiency and the oxygen vacancy concentration could be determined. The oxygen vacancies proved to be singly ionized. Above 873 K, Hall mobility and carrier concentration had been determined as a function of both oxygen partial pressure and temperature for the first time. In this temperature range the mobility does not depend on carrier concentration, but shows aT −1.5 dependence.
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    Optical absorption and electronic transport in ion-implantation-doped polycrystalline SiC films (1995)
    Springer
    Applied physics 61 (1995), S. 193-201 
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    Keywords: 72.20 ; 72.80 ; 78.65
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    Notes: Abstract Fine-grained (d≈0.1 μm), polycrytalline SiC films were prepared on top of insulating and optically transparent sapphire substrates by means of a thermal crystallization technique. Optical absorption measurements indicate that the individual SiC grains consist of relatively defect-free β-SiC surrounded by high-defect density grain-boundary material. Nominally undoped material exhibits a low de conductivity (δ≈10−8 Ω−1 cm−1) in the dark and an efficient photoconductivity apon illumination with short-wavelength UV light. The temperature dependence of the de transport exhibits a quasi-Arrhenius-type behaviour with average activation energies of the order to 0.6 eV. A characteristic feature of this kind of transport is a continuous increase in activation energy with increasing film temperature. Upon doping with N, P and Al ions, the average activation energy is decreased and room temperature conductivities of the order of 0.1 Ω−1 cm−1 are reached. Doping with B ions, on the other hand, only leads to high-resistivity material. It is shown that the electronic transport in doped SiC-On-Sapphire (SiCOS) films can be successfully modelled in terms of a grain-boundary-dominated conduction process. In this process thermal activation across potential barriers at the grain-boundary surfaces competes with funneling through these same barriers.
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    Effect of melting on the excitation of surface acoustic wave pulses by UV nanosecond laser pulses in silicon (1995)
    Springer
    Applied physics 61 (1995), S. 285-298 
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    Keywords: 42.55 ; 43.00 ; 62.00 ; 65.00 ; 68.00
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The influence of melting on the excitation of Surface Acoustic Wave (SAW) pulses in silicon is studied both theoretically and experimentally. The developed theory of Rayleigh-type SAW laser-induced thermoelastic excitation in a structure composed of a liquid layer on a solid substrate predicts that the SAW is predominantly generated in the solid phase due to the absence of shear rigidity in a liquid. The characteristic changes in the SAW pulse shape as well as the saturation and even the decrease of the SAW pulse amplitude observed above the melting threshold are explained theoretically to be a result of the decrease of the heat flux into the solid phase as well as due to the decrease of the volume of the solid phase caused by melting. Although the heat flux into the solid phase is decreased both as a consequence of the reflectivity increase and the additional energy losses (latent heat of melting) at the phase transition, it is demonstrated that the influence of reflectivity changes on the SAW pulse is negligible in comparison with the effect of melt-front motion. For laser pulses of 7 ns duration at 355 nm, the threshold value of laser fluence for meltingF m=0.23±0.04 J/cm2 and for the ablationF a=1.3±0.2 J/cm2 were determined experimentally as the points of characteristic changes in the observed SAW pulses.
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    Effect of in addition on some physical properties of the As2Se3 amorphous system (1995)
    Springer
    Applied physics 60 (1995), S. 233-238 
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    Keywords: 73.60 ; 72.20 ; 61.40
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effect of In content on do electrical conductivity and DTA of the system (As2Se3)1-x. Inx, x=0, 0.01, 0.05, has been studied. The electrical energy gap was found to increase for an In content 0.01% and decrease for an In content 0.05%. The samples exhibit the three conduction mechanisms proposed by Mott and Davis. The activation energy was calculated for each mechanism. The effect of heating rate on the transition temperatures (T g,T c,T m) was studied and the variation of the crystallization-peak position was used to calculate the activation energy and the order of the crystallization process.
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    A new structure of In-based ohmic contacts ton-type GaAs (1996)
    Springer
    Applied physics 62 (1996), S. 241-245 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 72.20 ; 73.30
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    Notes: Abstract Electrical, structural and reaction characteristics of In-based ohmic contacts ton-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated bye-beam sputtering Ni, NiIn and Ge targets on VPE-grownn +-GaAs film (≈1 μm, 2 × 1018 cm−3) in ultrahigh vacuum as the structure of Ni(200 Å)/ NiIn(100 Å)/Ge(40 Å)/n +-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500–900°C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3ln. The lowest specific contact resistivity (ϱ c) of (1.5 ± 0.5) × 10−6 cm2 measured by the Transmission Line Method (TLM) was obtained after annealing at 700°C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, In x Ga1− xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.
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    Anomalous plasma diffusion transverse to high magnetic fields in InSb (1976)
    Springer
    Applied physics 10 (1976), S. 33-39 
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    Keywords: 72.20
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    Notes: Abstract Investigations on the ambipolar diffusion of an electron-hole plasma transverse to a magnetic field have been carried out in InSb. A plasma layer, produced at the surface of the sample by a short laser pulse, was moved through the sample in crossed electric and magnetic fields by the Lorentz force. From the broadening of the plasma layer we found at 80K an enhanced diffusion coefficient which decreased proportional to 1/B for magnetic fields higher than 1T, constrary to the expected classical 1/B 2 dependence. Furthermore, the diffusion coefficient was strongly dependent on the electric field. The ambipolar drift velocity, measured simultaneously showed a classical behaviour. Together with the enhanced diffusion we observed instabilites in the electric potential. The instability threshold decreased towards the cathode.
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    A simple theory of the laser-induced damage in semiconductors (1977)
    Springer
    Applied physics 12 (1977), S. 31-37 
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    Keywords: 42.60 ; 72.20
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    Notes: Abstract A simple theory is presented for the laser-induced damage in semiconductors in the range of low irradiation intensities. This theory avoids the solution of coupled differential equations, and takes into account characteristic physical properties of semiconductors—i.e. energy gap, carrier lifetime, and surface recombination velocity. The deduced equations permit us to estimate the damage threshold, or the minimum irradiation time required for damage to occur. Comparison is made with some experimental results reported in the literature and a reasonable agreement is found.
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    Determination of localized level energies by a statistics of the fermi-level (1977)
    Springer
    Applied physics 12 (1977), S. 379-381 
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    Keywords: 71.55 ; 72.20
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    Notes: Abstract For a very large number of samples of a semiconducting material, which is not intentionally doped, the Fermi-level coincides approximately with the respective energy levels of the accidential impurities and defects. Based on this fact, the energies of localized levels were determined from a statistic of the Fermi-level in CdSe platelets. These energies agree very well with most of the values obtained with different methods by other authors.
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    Reaction kinetics of excimer lasers using NF3 (1977)
    Springer
    Applied physics 13 (1977), S. 1-3 
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    Keywords: 42.55
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    Notes: Abstract Disappearance of NF3 and appearance of NF2 and N2F2 in an excimer laser is followed quantitatively with a mass spectrometer. A model for the kinetics is presented.
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    Continuous laser oscillation in diatomic molecular sodium (1977)
    Springer
    Applied physics 13 (1977), S. 97-99 
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    Keywords: 42.55 ; 82.50
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    Notes: Abstract First cw laser oscillation with thresholds below 1 mW was observed for various B1Пu → X1 ∑ g + transitions of diatomic molecular sodium excited by different argon laser lines in the range of 454–488 nm. For pump powers of 0.5 W output powers up to 3 mW and single-pass gain up to 0.1 cm−1 were obtained. Some properties of the heat pipe laser system are discussed.
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    A magnetic tuning system for dye lasers (1977)
    Springer
    Applied physics 14 (1977), S. 25-28 
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    Keywords: 42.55 ; 42.80
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    Notes: Abstract A new device for magnetically displacing the output mirror of a laser resonator and synchronously tilting an etalon in order to obtain single-mode tuning of a dye laser over a tuning range of at least 10 GHz is described. Comparatively large displacements with good linearity of a coil mounted on a membrane and placed inside the strong magnetic field of a ring magnet are obtained for currents in the order of several hundred milliamperes. Together with etalon flats of appropriate thickness and reflection mounted in the resonator of the laser a versatile instrument for application in intra and extra cavity spectroscopy has been developed.
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    Measurements of some reaction rates of importance in KrF lasers (1977)
    Springer
    Applied physics 14 (1977), S. 393-398 
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    Keywords: 34 ; 42.55
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    Notes: Abstract A flowing afterglow method has been used to study a number of reactions of importance in KrF lasers using NF3 as the fluorine donor. Total rate constants are reported for Kr*(3 P 2)+NF3 and Kr++NF3. The thermal energy attachment coefficient has been measured for NF3 and the cross section for the electron excitation process Kr*(3 P 2) +e→Kr*(3 P 1)+e has been estimated. The relevance of these results to discharge pumped KrF lasers is discussed.
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    Ultrashort-pulse generation by lasers with saturable absorbers (1978)
    Springer
    Applied physics 15 (1978), S. 439-450 
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    Keywords: 42.55 ; 42.65
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    Notes: Abstract A theoretical model for the ultrashort-pulse (USP) generation by lasers with saturable absorbers is presented. The gain medium is assumed to be a two-level system whereas the absorber is described by a four-level system which is characterized by a two-stage absorption process and the pertinent relaxation times. Laser dynamical equations are developed in the rate-equation approximation and boundary conditions appropriate for an unidirectional ring cavity are established. Evolution of USP is investigated for different combinations of parameter values appropriate for solid-state laser systems by computer simulation, employing a finite difference approximation for the dynamical equations. It is shown that USP output is attainable even if the cross-section of the excited-state absorption isgreater than that of the ground-state absorption and the laser is operating just above threshold. In fact, it is found that through the participation of a strong excited-state absorption the discrimination against satellite pulses is enhanced so that single-pulse output is more achievable. Furthermore, it is proposed that single picosecond pulses may be obtainable from relatively broad initial peaks by utilizing the high pulse-selection and pulse-shortening efficiency of the absorber due to the contribution of the excited-state absorption. The applicability of the present model to singlet-triplet crossing and photoisomer formation is also discussed.
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    Electronic conduction mechanisms of Cs- and B-implanted SiO2-films (1977)
    Springer
    Applied physics 12 (1977), S. 137-148 
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    Keywords: 71.50 ; 72.20 ; 79.20
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    Notes: Abstract Thermal SiO2-films of MOS-structures have been implanted with Cs-and B-ions so that the distribution maximum was located near the center of the insulating films. The change in conduction mechanism was analysed before and after implantation and annealing at 500°C for 2h. Two major types of effects are observed: 1) Implantation generally changes the conduction mechanism from Fowler-Nordheim tunneling in pure SiO2 to the Frenkel-Poole mechanism in the implanted film for both types of ions. This effect is caused by traps due to radiation damage. 2) The second effect is dependent on the implanted type of ion. A strong increase of the current at high fields is observed after Cs-implantation while B-implantation leads to a decrease of the current at high fields. This effect is caused by field-enhanced emission and trapping of charge carriers, respectively. The local field in the implanted region is dependent on the charge state of the implanted ion. Cesium is positively and Boron is negatively charged in the oxide. After high-field stressing, a forming process occurs in the oxide which leads to high injection from the contacts. This forming process is very little dependent on the implantation.
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    HF sputtered indium oxide films doped with tin (1978)
    Springer
    Applied physics 16 (1978), S. 381-390 
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    Keywords: 73 ; 72.20
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    Notes: Abstract Indium-tin-oxide films (ITO films) sputtered in Ar-atmosphere with and without addition of oxygen reveal an irreversible increase in conductivity during annealing in vacuum. This annealing process increases drastically the density of free electrons, while the Hall mobility changes only slightly. Below the annealing temperature the temperature dependence of the conductivity is reversible. In films with low density of free electrons, which behave like non-degenerated semiconductors, two activation energies for the mobility could be found. The irreversible changes, observed during annealing in the vacuum, are explained by diffusion of oxygen from the interior of the film to the surface, followed by desorption of the oxygen from the surface into the vacuum. The excess oxygen in the non-stoichiometric films plays the role of electron traps. The irreversible effects during annealing in the vacuum are partly reversible in the long run. If the annealed films are exposed to oxygen or air their conductivity decreases because of diffusion of oxygen from the surface into the film.
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    Excimer gas-discharge tunable ArF laser (1977)
    Springer
    Applied physics 13 (1977), S. 107-108 
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    Keywords: 42.55
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    Notes: Abstract Intense laser oscillation has been observed from ArF molecules at 1933 Å. Excitation of the gas mixture NF3:Ar:He=1:55:630 at total pressures above 2.1 atm was produced by a transverse electric discharge. The range of fine tuning was from 1927 Å to 1936 Å. An output energy of 0.8 mJ was measured from a laser pulse 15 ns in duration.
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    The effect of substituting metal vapour with metal halide vapour in a hollow cathode laser discharge (1980)
    Springer
    Applied physics 21 (1980), S. 25-28 
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    Keywords: 35 ; 42.55
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    Notes: Abstract He−Zn and He−ZnCl2 hollow cathode discharges were compared. The metal vapour concentration necessary for laser operation can be achieved at a lower temperature for the molecular substance. On the other hand, the efficiency decreases because part of the He ions necessary for the selective excitation of the upper laser level of the metal ion are lost in the dissociation process.
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    Detection of CO2-laser power variations via plasma tube impedance changes (1980)
    Springer
    Applied physics 21 (1980), S. 407-409 
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    Keywords: 42.55 ; 52 ; 85.60
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    Notes: Abstract A method is described for detection of CO2-laser power variations which requires no optical detector. It is based on plasma-tube impedance changes induced by the laser power flow within the cavity. A constant-current high-voltage power supply and a special equalizer are necessary to obtain a voltage proportional to the laser power. Details for the design of the equalizer are given. The detection scheme works for frequencies up to about 5 kHz and can be used for laser frequency stabilization or signature analysis.
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    Laser-fluctuation measurements in a bath of strong Gaussian noise (1979)
    Springer
    Applied physics 18 (1979), S. 415-419 
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    Keywords: 42.55
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    Notes: Abstract Remarkable intensity fluctuations were observed in the LiNdP4O12 (LNP) laser by placing a moving ground-glass plate across the ouput beam. Resonance-like behaviors were also observed by tuning the moving velocity of the ground-glass plate, with respect to relaxation oscillations. Classical rate equations including the modulation term were given to explain the observed phenomena. Similar intensity fluctuations corresponding to relaxation oscillations were observed when the LNP laser light beam was coupled to an optical fiber.
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    Feedback controlled self-excitation of optical pulses in a CW dye ring laser (1978)
    Springer
    Applied physics 15 (1978), S. 59-63 
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    Keywords: 42.55
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    Notes: Abstract Feedback controlled self-excitation of optical pulses of nanosecond duration has been observed to occur rather reliably in a CW dye ring laser, oscillating in a traveling mode. These observations are described analytically by means of a direct time domain approach. It is shown that a steady-state Gaussian pulse whose time duration determined from the self consistency condition in terms of system characteristics describes accurately the observed pulse behaviors.
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    Laser properties of praseodymium pentaphosphate single crystals (1979)
    Springer
    Applied physics 19 (1979), S. 345-351 
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    Keywords: 78.55 ; 42.55
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    Notes: Abstract PrP5O14, PrxLa1−xP5O14, and PrxY1−xP5O14 (0≦x≦1) single crystals of laser quality were synthesized and their crystallographic and optical parameters measured. Laser emissions in the visible (λ=637.4 nm) with no mirrors in place (superradiance) and also in various optical resonators have been observed.
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    Efficient single-mode operation of a standing-wave dye laser (1979)
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    Applied physics 19 (1979), S. 399-403 
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    Keywords: 42.55
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    Notes: Abstract The selection of a single longitudinal mode of a dye laser can be achieved with double or triple Michelson reflectors instead of Fabry-Perot etalons inside the laser cavity. These systems can be adapted to commercial multimode dye lasers. They provide a high efficiency and a good geometrical quality of the output beam. With a 7 watt pump power (λ=514.5 nm line of the Ar+ laser), a tunable output power of 1 watt was obtained at the peak of R6G, in the main output beam; the total single-mode power, including the auxiliary output beams, exceeded 1.4 watt. These results correspond to efficiencies of 14% and 20%, respectively (24% and 30% slope efficiencies). We discuss in the text why these efficiencies are comparable to those of ring lasers. In the infrared, with a 4.5 watt pump power (red lines of a Kr+ laser), 250 mW of single-mode output power in the main output beam was obtained at 780 nm with Oxazine 750.
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    Spectral coincidences between CO-Laser and nitric-oxide. A reinvestigation (1979)
    Springer
    Applied physics 19 (1979), S. 427-429 
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    Keywords: 33 ; 35 ; 42.55
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    Notes: Abstract Spectral coincidences between CO-laser lines and NO fundamental absorption lines were reinvestigated in order to resolve discrepancies between recently published papers. The absorption of CO laser radiation by NO and NO/Ar mixtures was measured and fitted by calculations using a Voigt profile for the NO line shapes. A new coincidence with a frequency offset of less than the NO Doppler width was found.
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    Extended spectral distribution of lasing transitions in a liquid-nitrogen cooled CO-laser (1979)
    Springer
    Applied physics 19 (1979), S. 439-440 
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    Keywords: 07 ; 42.55
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    Notes: Abstract A liquid-nitrogen cooled12C16O laser was operated both Q-switched and cw. A total of 276 lasing transitions were observed in cw using an intracavity grating for line selection. In the Q-switch mode, 230 lines occurred without dispersive element in the cavity.
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    Simultaneous operation at two different wavelengths of an PrLaP5O14 laser (1981)
    Springer
    Applied physics 24 (1981), S. 13-20 
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    Keywords: 42.55 ; 78.60
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    Notes: Abstract Simultaneous laser operation at the wavelengths of λ1=637 and λ2=717 in Pr0.5La0.5P5O14 single crystals was observed. The crystals were excited by nanosecond publses from a Coumarin 2 dye laser (λ=450 nm). Laser emissions and their interdependence were studied both in crystals without an external resonator and in crystals placed within a plane parallel resonator. The energetic, time and frequency characteristics for both laser actions were examined. The effect of bifrequential emission was also found in crystals of different ratios of Pr and La ions concentration and in pure praseodymium pentaphosphate.
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    Measurement of the transition strength of the 00o2 9.4 μm sequence band in CO2 using a tunable diode laser (1978)
    Springer
    Applied physics 17 (1978), S. 349-353 
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    Keywords: 35 ; 42.55 ; 42.68
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    Notes: Abstract We report the first accurate measurements of the transition strengths and linewidths of the 00o2 9.4 μm sequence lines of CO2. This sequence band is found to be very similar to the regular 00o1 laser band, except for an experimentally determined factor of 1.89±0.12 increase in transition strength (if the CO2 molecule is treated as a simple harmonic oscillator the theoretical increase in transition strength is 2.0). The laser absorption spectrometer used for these measurements can detect absorption coefficients in CO2 of ≈10−7 m−1, and we discuss the feasibility of using this sensitivity to monitor rare isotopic forms of CO2.
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    Influence of collisional coupling on the energy extraction from theB, C, andD state in KrF (1979)
    Springer
    Applied physics 20 (1979), S. 129-134 
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    Keywords: 42.55 ; 33 ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Collisional coupling between theB, C, andD states of KrF is measured in a discharge pumped KrF laser. Detection of the time resolved populations in the three states via measurement of the side fluorescence in theB→X, C→A, andD→X bands is used to record the collisional relaxation from theC andD state to theB state during laser emission. The experimentally determined limits for the collisional coupling times are τB-C≦1 ns and τB-D,τC-D〈20 ns at total pressures of 2 bar. Investigation of theB→X fluorescence band shows that the vibrational manifold of theB state is not thermalized during laser emission. TheV-V,T coupling time is estimated to be τV-V,T=4±2 ns. The influence of collisional coupling on energy extraction in the KrF laser is discussed.
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    URL: http://dx.doi.org/10.1007/BF00885933
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    Influence of the inversion depletion in the active medium on the evolution of ultrashort pulses in passively mode-locked solid-state lasers (1979)
    Springer
    Applied physics 20 (1979), S. 237-245 
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    ISSN: 1432-0630
    Keywords: 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An analytical treatment of the ultrashort-pulse generation in a solid-state laser is given taking into account gain saturation. The probability for the breakdown of the picosecond-pulse evolution caused by the amplification depletion is calculated. The influence of the active medium saturation on the satellite-pulse probability is investigated. Both probabilities characterize the mode-locking behaviour of the laser system and are calculated for various laser parameters to find an optimum laser regime.
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    URL: http://dx.doi.org/10.1007/BF00886024
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  • 77
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    Coherent γ-emission by stimulated annihilation of electron-positron pairs (1979)
    Springer
    Applied physics 19 (1979), S. 127-130 
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    ISSN: 1432-0630
    Keywords: 42.55 ; 42.65
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The possibility of using stimulated emission from the recombination of electron-positron pairs for obtaining coherent γ-rays is considered. The critical number of pairs needed for the process is calculated.
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    URL: http://dx.doi.org/10.1007/BF00900548
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  • 78
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    Dye lasers and intermolecular and intramolecular energy transfer processes (1979)
    Springer
    Applied physics 19 (1979), S. 165-170 
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    ISSN: 1432-0630
    Keywords: 33 ; 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Computer calculations of ETDL performance indicate that dye laser output can be manipulated by an appropriate choice of a donor (absorber)-acceptor (dye) couple. Studies of relevant laser induced inter- and intramolecular energy transfer processes are presented.
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    URL: http://dx.doi.org/10.1007/BF00932391
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  • 79
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    Small-scale instability of a pulse front traversing a resonant saturable absorber (1979)
    Springer
    Applied physics 19 (1979), S. 221-224 
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    ISSN: 1432-0630
    Keywords: 42.10 ; 42.55 ; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Wave front of a light pulse is shown to be unstable as it propagates through a resonant saturable absorber, if its frequency is higher than the resonance frequency of the absorber. When ΔωT 2∼1, a small-scale transverse instability with the dimension of (λl abs)1/2 grows rapidly. Its growth-rate is of the order of the small-signal-absorption length of the medium.
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    URL: http://dx.doi.org/10.1007/BF00932401
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  • 80
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    A simple transition-locked and polarization-forced multi-line oscillator for high-power CO2-laser systems (1979)
    Springer
    Applied physics 19 (1979), S. 257-264 
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    ISSN: 1432-0630
    Keywords: 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Employing injection-locking techniques an oscillator configuration was found comprising in a simple way all the features required for fusion directed high-power CO2 laser systems. The oscillator provides emission in single axial modes on rotational transitions which can be freely selected by feeding fluencies of a few mW/cm2 at the particular transition into the oscillator cavity. In the same way simultaneous emission on selectable lines can be achieved. By the same principle the oscillator can be forced to emit in any orientation of polarization. The set up is relatively simple, the alignment rather uncritical, and the operation reliable. Gaussian-shaped nanosecond pulses with low forepulse power are produced with the help of a pulse cutter and saturable multiline absorber. The set up is described and its features are demonstrated by measurements.
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    URL: http://dx.doi.org/10.1007/BF00900468
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  • 81
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    An analysis of stimulated longitudinal electrostatic bremsstrahlung in a free-electron laser structure (1980)
    Springer
    Applied physics 23 (1980), S. 295-298 
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    ISSN: 1432-0630
    Keywords: 41 ; 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An analysis of stimulated emission of radiation by an electron beam passing through a periodic longitudinal electrostatic field is presented, and its use in a free-electron laser structure is discussed. The analysis is based on a coupled-mode calculation of the interaction between a waveguided electromagnetic mode and an electron-beam plasma with finite cross section. The dispersion equation derived applies to the collective as well as the single electron regime.
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    URL: http://dx.doi.org/10.1007/BF00914914
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  • 82
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    New cw optically pumped FIR emissions in HCOOH, D2CO and CD3Br (1980)
    Springer
    Applied physics 23 (1980), S. 345-348 
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    ISSN: 1432-0630
    Keywords: 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract New FIR emissions lines have been observed for HCOOH, D2CO and CD3Br. Assignments have been made of the HCOOH lines and for most of those of CD3Br. For D2CO, most of the new emissions showed a corresponding cascade transition.
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    URL: http://dx.doi.org/10.1007/BF00903213
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  • 83
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    Selective laser excitation of bases in nucleic acids (1979)
    Springer
    Applied physics 20 (1979), S. 257-259 
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    ISSN: 1432-0630
    Keywords: 87 ; 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Selective electronic excitation of single kinds of DNA bases were performed with dye lasers. Different DNA-dye-complexes were used and the selective excitation could be proved by the varying strength of the interaction between the bases and the dye molecules.
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    URL: http://dx.doi.org/10.1007/BF00886028
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  • 84
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    Powerful laser systems with phase conjugation by SMBS mirror (1979)
    Springer
    Applied physics 20 (1979), S. 261-264 
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    ISSN: 1432-0630
    Keywords: 42.65 ; 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The method of Stimulated Mandelshtam-Brillouin Scattering (SMBS) is utilized in a powerful laser to obtain better transverse beam quality by phase conjugation. The principle is explained, and the conclusions are substantiated by experimental results.
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    URL: http://dx.doi.org/10.1007/BF00886029
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  • 85
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    Wide-range line-tunable oscillation of an optically pumped NH3 laser (1980)
    Springer
    Applied physics 21 (1980), S. 237-240 
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    ISSN: 1432-0630
    Keywords: 42.55 ; 42.60 ; 34.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Selective single-line oscillation has been obtained from an NH3 laser in the range from 11 to 13 μm. Pumping of high pressure NH3−He mixture with theR(30) line of a TEA-CO2 laser made it possible to tune on more than 30 lines with the aid of a grating. However, such line tunable oscillation was not observed when theR(16) line was used for pumping. Reasons for this difference are discussed.
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    URL: http://dx.doi.org/10.1007/BF00886173
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  • 86
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    Simplification of the helical TE N2 laser (1980)
    Springer
    Applied physics 21 (1980), S. 319-321 
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    ISSN: 1432-0630
    Keywords: 42.55 ; 42.60
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report the observation that the helical TE N2 laser can effectively be simplified by giving up the use of decoupling elements as well as by abolishing the segmentation of the electrode structure. Although, as a consequence of this simplification, the operating pressure range was slightly decreased, the output power could be improved by roughly 30%, a result which is attributed to the new electrode geometry exhibiting lower inductance and lower damping losses.
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    URL: http://dx.doi.org/10.1007/BF00895921
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  • 87
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    Selective action on nucleic acids components by picosecond light pulses (1980)
    Springer
    Applied physics 21 (1980), S. 391-395 
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    ISSN: 1432-0630
    Keywords: 87 ; 42.55 ; 82.50
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report on first attempts for selective action on nucleic acid components, namely uracil and adenine, using picosecond light pulses. Selective action was achieved both in the case of irradiation of mixtures of bases and in the case of irradiation of mixtures of different nucleic acids components, which contain uracil and adenine.
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    URL: http://dx.doi.org/10.1007/BF00895931
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  • 88
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    Periodic pulse solutions of a laser consisting of a pair of amplifiers mode locked by a fast saturable absorber (1980)
    Springer
    Applied physics 22 (1980), S. 213-218 
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    ISSN: 1432-0630
    Keywords: 42.55 ; 42.60 ; 42.65
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We present periodic solutions, which are described in terms of Jacobian elliptic functions, for the steady state pulses from a laser system consisting of a pair of amplifiers of unequal relaxation time mode locked by a “fast” saturable absorber. The pulsewidth and the average power in the pulse are expressed interms of the system parameters through two different approaches, where detailed plots are given for one of the approaches. Summary of the characters to be possessed by the amplifier pair to ensure the reliable production of shortest possible pulses is given.
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    URL: http://dx.doi.org/10.1007/BF00886009
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  • 89
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    Modelling of a solar-pumped MHD excimer laser (1980)
    Springer
    Applied physics 22 (1980), S. 277-281 
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    ISSN: 1432-0630
    Keywords: 42.55 ; 52
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An analytical model is applied to the concept of a solar-pumped MHD laser utilizing the CsXe excimer and Cs2 dimerA-X laser transitions. The model predicts practical gain coefficients on the excimer band for supersonic flow of a 2000 K, 20 atmosphere cesium-xenon plasma across a ∼10 kG magnetic field.
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    URL: http://dx.doi.org/10.1007/BF00899877
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  • 90
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    Gasdynamic CO laser with closed-cycle gas flow (1980)
    Springer
    Applied physics 22 (1980), S. 421-427 
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    ISSN: 1432-0630
    Keywords: 42.55 ; 47 ; 52
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The operation of an electrically excited gasdynamic CO laser with closed-cycle gas flow is described. Details of the gasdynamics, the recompression, and the cooling of the flowing gas are given. The electrical discharge produces contaminating gas compounds—in particular CO2—which accumulate in the recirculating gas. The resulting transient behavior of the laser gas composition, the discharge characteristics, and the laser performance are studied and compared with the results obtained with the same CO laser in an open-flow system. It is found that the closed-cycle system may be operated for considerable time if the CO2 contamination is removed from the laser gas.
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    URL: http://dx.doi.org/10.1007/BF00901068
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  • 91
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    Solubility limit of impurities in silicon after laser induced melting (1980)
    Springer
    Applied physics 23 (1980), S. 15-19 
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    ISSN: 1432-0630
    Keywords: 64.75+g ; 61.70T ; 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The solubility of several dopants (Sb, Ga, Bi, In) in laser treated silicon has been investigated. The dopants were introduced by vacuum deposition followed by ruby laser irradiation. Their solubility was determined by Rutherford backscattering spectroscopy measurements in channelling and random conditions. In all cases, a maximum solubilityC S * , much higher than the equilibrium solubility limitC S 0 and independent of the pulsed laser energy density, was found. The values obtained are in good agreement with those calculated from a simple model based on phase diagram considerations, using the relationship: $$C_S^* = \frac{{C_S^0 }}{{k_0 }}k^* ,$$ wherek 0 andk * are the equilibrium and effective distribution coefficients. Finally, the existence of a new solubility limit for a laser treatment is discussed.
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  • 92
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    New cw FIR laser lines from optically pumped ammonia analogues (1980)
    Springer
    Applied physics 23 (1980), S. 127-130 
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    Keywords: 42.55
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    Notes: Abstract Two new cw submillimetre lines optically pumped by the 9 μR(30) CO2 laser have been observed for14NH3 and assigned to thea(6,0)→s(5,0) transition and to its cascade transitions(5,0)→a(4,0) in thev 2=1 state. In addition, six new emission lines have been observed for NH2D, and one tentatively assigned to the (11,1)→(10,1) transition of ND3. Methylamine has also been investigated and twenty-eight new emission lines have been discovered.
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  • 93
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    A high power N2-laser of long pulse duration (1980)
    Springer
    Applied physics 23 (1980), S. 341-344 
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    Keywords: 42.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An N2-laser of 19 ns pulse-duration and an energy of 30 mJ has been developed and examined. A dc preionization, a grooved electrode and a partial electrical screening of the discharge tube permit reproducible single-shot operation and yield a homogeneous beam.
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  • 94
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    Infrared laser emission in two-photon pumped sodium vapour (1981)
    Springer
    Applied physics 24 (1981), S. 33-38 
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    ISSN: 1432-0630
    Keywords: 42.55 ; 33.80
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    Notes: Abstract We report infrared laser emission in the region of 3 to 5 μm from sodium vapour optically pumped by a pulsed dye laser with wavelengths ranging from 585 to 610nm. Twophoton excitation processes are believed to be responsible for the primary excitation. Both molecular transitions (4 to 5 μm) between high lying states, and atomic transitions (52 S 1/2−42 P 3/2,1/2 at 3.41 μm) have been identified.
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    Arsenic-implanted polysilicon layers (1981)
    Springer
    Applied physics 24 (1981), S. 197-200 
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    Keywords: 72.20 ; 73 ; 85.30
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    Notes: Abstract The diffusion behavior of implanted arsenic in polycrystalline silicon was investigated, using backscattering and electrical measurements. The diffusion coefficient isD=8.5×10−3 exp (−2.74/kT) for polycrystalline silicon deposited on freshly-etched silicon andD=1.66 exp (−3.22/kT) for the deposition on silicon having natural oxide. At the interface to the single-crystalline silicon, a pile-up of arsenic occurs, which depends also on the surface treatment prior to the deposition of the polycrystalline silicon.
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  • 96
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    On the homogeneization of transverse gas discharges by preionization (1981)
    Springer
    Applied physics 24 (1981), S. 267-272 
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    ISSN: 1432-0630
    Keywords: 52 ; 42.55
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    Notes: Abstract Detailed data of the minimum preionization electron density (MPED)n 0 necessary to initiate a homogeneous discharge mode in transverse gas discharges are computed. An upper limit for the inductance of the discharge circuit is set by the power balance during breakdown. The results are presented as functions of generalized parameters. Applicability of the computations is proved by experimental observations.
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    Theoretical and experimental investigations of a passively mode-locked Nd: Glass laser (1981)
    Springer
    Applied physics 24 (1981), S. 341-348 
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    ISSN: 1432-0630
    Keywords: 42.55
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    Notes: Abstract The presented theoretical model for a mode-locked Nd-glass laser simultaneously takes into account dynamics of the mode-locking dye, amplification saturation and radiation background. A systematic variation of laser parameters gives insight into the pulse formation process and allows to improve the laser design. The calculations show that it should be possible to decrease considerably the duration of light pulses of a mode-locked Nd-glass laser. Using a new mode-locking dye with a switching time of τ=2.7×10−12 s we obtained stable laser operation and a pulse duration of 1.7×10−12s.
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    URL: http://dx.doi.org/10.1007/BF00899732
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  • 98
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    Measurement of atomic parameters for the3 D 1 state of I–II (1981)
    Springer
    Applied physics 25 (1981), S. 31-34 
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    ISSN: 1432-0630
    Keywords: 35 ; 42.55 ; 42.65
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    Notes: Abstract The decay rates of the3 D 1 level of I–II and the 3s 2 level of neon have been measured by the magnetic-field power dip method. The decay rate at the zero-pressure limit is found to be 7.1 MHz/2π for the3 D 1 level. The collision cross-section for excited I ions with helium atoms equals 0.19×10−15 cm2.
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  • 99
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    Solvent dependent characteristics of XeCl pumped UV dye lasers (1981)
    Springer
    Applied physics 25 (1981), S. 17-22 
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    ISSN: 1432-0630
    Keywords: 42.55 ; 82.50
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The characteristics of near uv dye lasers pumped with short duration, 308 nm pulses from a XeCl laser are described with particular emphasis on the parameters influencing high average power operation. The solvent is shown to effect the operation of all dye lasers studied, particularly the photochemical stability. Measurements of the efficiency, as a function of the integrated pump energy have been made for a series of dye-solvent combinations. With the best combinations, average output powers in excess of 1W and conversion efficiencies greater than 25% were obtained at a repetition rate of ∼100 Hz.
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    URL: http://dx.doi.org/10.1007/BF00935386
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  • 100
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    Oscillatory effective mass in degenerate narrow-gap semiconductors in a quantizing magnetic field (1981)
    Springer
    Applied physics 25 (1981), S. 105-108 
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    ISSN: 1432-0630
    Keywords: 85.30 ; 72.20 ; 72.15
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An attempt is made to study the effect of a quantizing magnetic field on the effective electron mass in degeneraten-type narrow-gap semiconductors at low temperatures. It is found, takingn-Hg1−x Cd x Te as an example, that the effective electron mass shows an oscillatory magnetic-field dependence as is expected because of the dependence of the effective mass in degenerate non-parabolic bands on Fermi energy which oscillates with changing magnetic field. The amplitude of oscillations is, however, found to be significantly influenced by the alloy composition whereas the period is found to be independent of the band non-parabolicity, i.e. of the compositional parameter in ternary semiconductors.
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    URL: http://dx.doi.org/10.1007/BF00901280
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