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  • Wiley-Blackwell  (75.380)
  • American Institute of Physics (AIP)  (72.674)
  • American Meteorological Society (AMS)
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  • 1
    Publikationsdatum: 2020-04-28
    Materialart: Article , PeerReviewed
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  • 2
    Publikationsdatum: 2019-01-22
    Beschreibung: This contribution aims to report the reflections we had with the scientific community during two international workshops on reference materials for stable isotopes in Davos (2002) and Nice (2003). After evaluating the isotopic homogeneity of some existing reference materials, based on either certificates, literature data or specific inter-laboratory rounds, we confirm these as primary reference materials or propose new ones relative to which stable isotope compositions should be reported. We propose DSM-3 for Mg, NIST SRM 915a for Ca, L-SVEC for Li and NBS28 for Si. Cadmium does not yet have a well identified delta zero material, although three commercial mono-elemental Cd solutions have yielded the same isotopic composition relative to one another. In order to scale the linearity of any mass spectrometer, some secondary reference materials are also proposed: Cambridge-1 solution for Mg, the “Münster-Cd” and JEPPIM Cd solutions for Cd and the “Big Batch” silicate for Si. The team from Nancy propose to prepare a mixed spike solution for Li isotopes. Well-characterised natural samples such as ocean or continental waters, diatoms, sponges, rocks and minerals are needed to validate the entire analytical procedure, particularly to take into account the effect of sample mineralisation and of chemical manipulations for elemental separation prior to analysis.
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  • 3
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    Wiley-Blackwell
    In:  Oikos, 106 . pp. 93-104.
    Publikationsdatum: 2016-05-26
    Beschreibung: Ecological stoichiometry describes the biochemical constraints of trophic interactions emerging from the different nutrient content and nutrient demand of producers and consumers, respectively. Most research on this topic originates from well-mixed pelagic food webs, whereas the idea has received far less attention in spatially structured habitats. Here, we test how light as well as grazing and nutrient regeneration by consumers affects growth and biomass of benthic primary producers. In the first laboratory experiment, we manipulated grazer presence (two different snail species plus ungrazed control), in the second experiment we factorially combined manipulation of grazer presence and light intensity. We monitored snail and periphyton biomass as well as dissolved and particulate nutrients (nitrogen and phosphorus) over time. Grazers significantly reduced algal biomass in both experiments. Grazers affected periphyton nutrient content depending on the prevailing nutrient limitation and their own body stoichiometry. In the nitrogen (N-) limited first experiment, grazers increased N both in the periphyton and in the water column. The effect was stronger for grazers with lower N-content. In the phosphorus (P-) limited second experiment, grazers increased the P-content of the periphyton, but the grazer with lower N-content had additionally positive effects on algal N. Light reduction did not affect periphyton biomass, but increased chlorophyll-, N- and P-content of the periphyton. These experiments revealed that the indirect effects of grazers on periphyton were bound by stoichiometric constraints of nutrient incorporation and excretion.
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  • 4
    Publikationsdatum: 2019-09-23
    Beschreibung: Ecosystem resistance to a single stressor relies on tolerant species that can compensate for sensitive competitors and maintain ecosystem processes, such as primary production. We hypothesize that resistance to additional stressors depends increasingly on species tolerances being positively correlated (i.e. positive species co-tolerance). Initial exposure to a stressor combined with positive species co-tolerance should reduce the impacts of other stressors, which we term stress-induced community tolerance. In contrast, negative species co-tolerance is expected to result in additional stressors having pronounced additive or synergistic impacts on biologically impoverished functional groups, which we term stress-induced community sensitivity. Therefore, the sign and strength of the correlation between species sensitivities to multiple stressors must be considered when predicting the impacts of global change on ecosystem functioning as mediated by changes in biodiversity.
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  • 5
    Publikationsdatum: 2017-01-31
    Beschreibung: Recent experiments, mainly in terrestrial environments, have provided evidence of the functional importance of biodiversity to ecosystem processes and properties. Compared to terrestrial systems, aquatic ecosystems are characterised by greater propagule and material exchange, often steeper physical and chemical gradients, more rapid biological processes and, in marine systems, higher metazoan phylogenetic diversity. These characteristics limit the potential to transfer conclusions derived from terrestrial experiments to aquatic ecosystems whilst at the same time provide opportunities for testing the general validity of hypotheses about effects of biodiversity on ecosystem functioning. Here, we focus on a number of unique features of aquatic experimental systems, propose an expansion to the scope of diversity facets to be considered when assessing the functional consequences of changes in biodiversity and outline a hierarchical classification scheme of ecosystem functions and their corresponding response variables. We then briefly highlight some recent controversial and newly emerging issues relating to biodiversity-ecosystem functioning relationships. Based on lessons learnt from previous experimental and theoretical work, we finally present four novel experimental designs to address largely unresolved questions about biodiversity-ecosystem functioning relationships. These include (1) investigating the effects of non-random species loss through the manipulation of the order and magnitude of such loss using dilution experiments; (2) combining factorial manipulation of diversity in interconnected habitat patches to test the additivity of ecosystem functioning between habitats; (3) disentangling the impact of local processes from the effect of ecosystem openness via factorial manipulation of the rate of recruitment and biodiversity within patches and within an available propagule pool; and (4) addressing how non-random species extinction following sequential exposure to different stressors may affect ecosystem functioning. Implementing these kinds of experimental designs in a variety of systems will, we believe, shift the focus of investigations from a species richness-centred approach to a broader consideration of the multifarious aspects of biodiversity that may well be critical to understanding effects of biodiversity changes on overall ecosystem functioning and to identifying some of the potential underlying mechanisms involved.
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  • 6
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    Wiley-Blackwell
    In:  Fish and Fisheries, 5 (2). pp. 131-140.
    Publikationsdatum: 2016-11-25
    Beschreibung: Marine and fisheries scientists are increasingly using metapopulation concepts to better understand and model their focal systems. Consequently, they are considering what defines a metapopulation. One perspective on this question emphasizes the importance of extinction probability in local populations. This view probably stems from the focus on extinction in Levins' original metapopulation model, but places unnecessary emphasis on extinction–recolonization dynamics. Metapopulation models with more complex structure than Levins' patch-occupancy model and its variants allow a broader range of population phenomena to be examined, such as changes in population size, age structure and genetic structure. Analyses along these lines are critical in fisheries science, where presence–absence resolution is far too coarse to understand stock dynamics in a meaningful way. These more detailed investigations can, but need not, aim to assess extinction risk or deal with extinction-prone local populations. Therefore, we emphasize the coupling of spatial scales as the defining feature of metapopulations. It is the degree of demographic connectivity that characterizes metapopulations, with the dynamics of local populations strongly dependent upon local demographic processes, but also influenced by a nontrivial element of external replenishment. Therefore, estimating rates of interpopulation exchange must be a research priority. We contrast metapopulations with other spatially structured populations that differ in the degree of local closure of their component populations. We conclude with consideration of the implications of metapopulation structure for spatially explicit management, particularly the design of marine protected area networks.
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  • 7
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    Wiley-Blackwell
    In:  Fish and Fisheries, 5 (1). pp. 86-91.
    Publikationsdatum: 2017-02-02
    Beschreibung: Three simple fisheries indicators are presented: (i) percentage of mature fish in catch, with 100% as target; (ii) percent of specimens with optimum length in catch, with 100% as target; and (iii) percentage of ‘mega-spawners‘ in catch, with 0% as target, and 30–40% as representative of reasonable stock structure if no upper size limit exists. Application of these indicators to stocks of Gadus morhua, Sardinella aurita and Epinephelus aeneus demonstrate their usefulness. It is argued that such simple indicators have the potential to allow more stakeholders such as fishers, fish dealers, supermarket managers, consumers and politicians to participate in fisheries management and eventually hold and reverse the global pattern of convenience overfishing, which is defined here as deliberate overfishing sanctioned by official bodies who find it more convenient to risk eventual collapse of fish stocks than to risk social and political conflicts.
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  • 8
    Publikationsdatum: 2020-04-28
    Materialart: Article , PeerReviewed
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  • 9
    Publikationsdatum: 2020-04-28
    Materialart: Article , PeerReviewed
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  • 10
    facet.materialart.
    Unbekannt
    Wiley-Blackwell
    In:  Oikos (100). pp. 592-600.
    Publikationsdatum: 2017-01-31
    Beschreibung: Conceptual models predict counteractive effects of herbivores and nutrient enrichment on plant diversity and reversed effects of grazers under different nutrient regimes. I tested these hypotheses in 11 field experiments with periphyton communities in three different aquatic habitats (a highly eutrophic lake, an meso-eutrophic lake, and an meso-eutrophic part of the Baltic Sea coast) and in different seasons. Grazer access and nutrient supply were manipulated in a factorial design. Species richness and evenness were chosen as response variables. Both manipulated factors had significant and contrasting effects on diversity, with variable effect strength between sites and seasons. From the two aspects of diversity, evenness well reflected the changes in community composition. Fertilization tended to increase the dominance of few species and thus to decrease evenness, whereas grazers counteracted these effects by removing dominant life forms. The response of species richness was not as expected, since grazers decreased richness throughout, whereas nutrients had weaker effects but tended to increase richness. Species richness rather reflected changes in periphyton architecture. Grazers reduced algal richness presumably by co-consumption of rare species in the tightly connected periphyton assemblages, whereas enrichment may increase richness by providing more structure via increased dominance of filamentous species. Although grazer and nutrient effects on richness and evenness were opposing, there was no change in the effect of one factor by manipulation of the other.
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  • 11
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    Wiley-Blackwell
    In:  Journal of Fish Biology, 62 . pp. 253-276.
    Publikationsdatum: 2017-09-08
    Beschreibung: A set of histological characteristics to judge ovarian development was established and used to elaborate morphological criteria of 10 maturity stages of Baltic cod Gadus morhua sampled throughout the annual cycle to represent different macroscopic maturity stages. The applied characteristics confirmed most stages of the macroscopic scale, but the separation of late immature and resting mature females remained imprecise. Atretic vitellogenic oocytes or encapsulated residual eggs identified the resting condition morphologically, but not all ovaries with visible signs of previous spawning showed such features. One ovarian stage that was previously classified as ‘ripening’ was changed to ‘spawning’, owing to the prevalence of hydrated eggs and empty follicles. Ovaries with malfunctions were defined by a separate stage. Macroscopic criteria were revised by comparing the gross anatomy of ovaries with their histology. Female length and gonado-somatic index supported stage definitions, but substantial variation in Fulton's condition factor and the hepato-somatic index rendered these of little use for this purpose. The time of sampling influenced staging accuracy. A female spawner probability function based on the proportion of ripening and ripe specimens in early spring seems to be the most appropriate method to estimate spawner biomass and reproductive potential.
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  • 12
    facet.materialart.
    Unbekannt
    Wiley-Blackwell
    In:  Journal of Fish Biology, 63 . pp. 280-299.
    Publikationsdatum: 2017-09-13
    Beschreibung: During peak spawning of sprat Sprattus sprattus in the Baltic Sea in May–June egg specific gravity averaged ±s.d. 1·00858 ± 0·00116 g cm−3 but was significantly higher in the beginning and significantly lower towards the end of the spawning season. A close relationship was found between egg diameter and egg specific gravity (r2 = 0·71). This relationship, however, changed during the spawning season indicating that some other factor was involved causing the decrease in specific gravity during the spawning period. The vertical egg distribution changed during the spawning season: eggs were distributed mainly in the deep layers early in the season, occurred in and above the permanent halocline during peak spawning, and above the halocline towards the end of the spawning season. Consequently, poor oxygen conditions in the deep layers and low temperatures in layers between the halocline and the developing thermocline may affect egg development. Thus, opportunities for egg development vary over the spawning season and among spawning areas, and depending on frequency of saline water inflows into the Baltic Sea and severity of winters, between years
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  • 13
    Publikationsdatum: 2019-01-22
    Beschreibung: A compilation of δ44/40Ca (δ44/40Ca) data sets of different calcium reference materials is presented, based on measurements in three different laboratories (Institute of Geological Sciences, Bern; Centre de Géochimie de la Surface, Strasbourg; GEOMAR, Kiel) to support the establishment of a calcium isotope reference standard. Samples include a series of international and internal Ca reference materials, including NIST SRM 915a, seawater, two calcium carbonates and a CaF2 reference sample. The deviations in δ44/40Ca for selected pairs of reference samples have been defined and are consistent within statistical uncertainties in all three laboratories. Emphasis has been placed on characterising both NIST SRM 915a as an internationally available high purity Ca reference sample and seawater as representative of an important and widely available geological reservoir. The difference between δ44/40Ca of NIST SRM 915a and seawater is defined as -1.88 O.O4%o (δ44/42CaNISTSRM915a/Sw= -0.94 0.07%o). The conversion of values referenced to NIST SRM 915a to seawater can be described by the simplified equation δ44/40CaSa/Sw=δ44/40CaSa/NIST SRM 915a - 1.88 (δ44/42CaSa/Sw=δ44/42CaSa/NIST SRM 915a - 0.94). We propose the use of NIST SRM 915a as general Ca isotope reference standard, with seawater being defined as the major reservoir with respect to oceanographic studies.
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  • 14
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present an experimental study of ion fluxes, energy distributions, and angular distributions inside surface features on radio frequency-biased wafers in high-density, inductively driven discharges in argon. Specifically, we present data on ion distributions at the bottom of 100-μm-square, 400-μm-deep "holes" in the wafer. Transmission of ions to the bottom of the holes increases with increasing ion energy and decreases as the sheath size becomes comparable to the hole size. Ion energy distributions at the bottom of the holes are narrower than distributions on the flat wafer surface. The flux of ions remains normal to the wafer surface over most of the hole area but the flux of ions within 6 μm of the wall is angled towards the wall. The observed trends are consistent with effects expected due to bowing of the plasma sheath around the surface features on the wafer. Scattering of ions off sidewalls contributes at most, only a small part of the ion flux reaching the bottom of the hole. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 15
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1775-1779 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Laser-accelerated beams of Mega-electron volt protons have been produced at the Los Alamos Trident laser facility and used for high-resolution point-projection proton radiography of Au grids. The effective proton source size affords an inherent resolution of 2–3 μm in the object plane. The proton beam is characterized by ion time-of-flight Faraday cup measurements and nuclear particle track detectors. Laser-driven proton radiography appears promising as a valuable research tool for probing plasmas or modest density objects. © 2002 American Institute of Physics.
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  • 16
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1793-1798 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoreflectance (PR) spectra have been measured to determine the lowest direct-band edge E0α (α=A, B, and C) of wurtzite CdS single crystal in the temperature range T=13–300 K for both E⊥c and E(parallel)c polarizations. The measured PR spectra can be interpreted by the three-dimensional (3D) excitonic plus one-electron line shapes over the entire temperature range. The temperature dependence of the excitonic and critical-point parameters (energy, amplitude, and broadening parameter) have been determined and analyzed using the Varshni [Physica (Amsterdam) 34, 149 (1967)] equation and an analytical four-parameter expression recently developed for the explanation of the band-gap shrinkage effect in semiconductors. The 3D- exciton binding energies have also been determined to be 27 (A), 31 (B), and 30 meV (C), respectively. © 2002 American Institute of Physics.
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  • 17
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1788-1792 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Analysis of discharge mechanism in especially designed pseudosparks that facilitate pseudospark characteristic low-erosive conduction at very high currents is presented. The alternate formulation of criterion for transition to arc discharge phase developed here enables us to account for the emergence of arcs at each aperture after a threshold electric charge is transmitted in these devices. The use of a large number of apertures is found to have no influence on discharge condition that initiates arc formation at individual apertures. © 2002 American Institute of Physics.
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  • 18
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1799-1802 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Formation of the anomalous cellular structure in (100) GaSb with Sn ion-implantation at a low temperature is investigated by cross-sectional scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. A fine structure consisting of many cells was formed on GaSb surface implanted by 60 keV Sn. The cell diameter and the thickness of the walls partitioning the cells were about 50 and 10 nm, respectively, which are almost constant in the range of the ion dose 4.0×1014–8.9×1014 ions/cm2. The depth of the cells increased linearly with increasing ion dose, from 100 nm in the sample implanted with a dose of 4.0×1014 ions/cm2 to 220 nm in that implanted with a dose of 8.9×1014 ions/cm2. From the experimental results, it is concluded that the development of the cellular structure originates in formation of the voids. An improved defect formation mechanism based on movement of the implantation-induced point defects is discussed. © 2002 American Institute of Physics.
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  • 19
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1780-1787 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A global model for electronegative plasma, in which the negative ion distribution is assumed to be a parabolic profile in the axial direction with a flat central region and a similar edge profile in the radial direction in the electronegative region, is applied to study the power and pressure dependences of plasma parameters in low-pressure CF4 discharges. The electron density increases approximately linearly with the power. The electron temperature also increases with the power due to the decrease in neutral number density with increase in power, resulting in the increase in plasma potential. The density of CF3+ is a weak function of the power, while the densities of CF2+, CF+, and F+, which are strongly correlated to the densities of the respective radicals, depend on the power. On the other hand, the decrease in electron temperature with the pressure significantly results in a decrease in the degree of dissociation. The electron density also decreases gradually with the pressure except for the case of pressure lower than 5 mTorr. The densities of CF2+, CF+, and F+ decrease gradually with the pressure at pressures higher than 5 mTorr, while the density of CF3+ increases gradually with the pressure. The electron energy probability function (EEPF) is measured with a Langmuir probe in an inductively coupled rf (13.56 MHz) CF4 discharge over a pressure range from 2 to 30 mTorr, while keeping the power injected into the plasma at about 70 W. The measured EEPFs are approximately Maxwellian at any pressure, although there is a slight deviation from a Maxwellian distribution at pressures higher than 10 mTorr. The results estimated from the measured EEPF are compared to the model and show reasonably good agreement. © 2002 American Institute of Physics.
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  • 20
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2000-2005 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We study radiative and nonradiative recombination at individual dislocations in GaN by cathodoluminescence performed in a transmission electron microscope. The dislocations are produced by indentation of dislocation free single crystals and have a-type Burgers vectors (b=1/3〈112¯0〉). They are aligned along 〈112¯0〉 directions in the basal plane. Our direct correlation between structural and optical properties on a microscopic scale yields two main results: (i) 60°-basal plane dislocations show radiative recombination at 2.9 eV; (ii) screw-type basal plane dislocations act as nonradiative recombination centers. We explain the nonradiative recombination by splitting this dislocation into 30° partials that have dangling bonds in the core. The dissociation width of these dislocations is 〈2 nm. © 2002 American Institute of Physics.
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  • 21
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 862-865 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We measured images and Fourier images of fluorescence for 0.11- and 0.22-μm-diameter dye-doped polystyrene microsphere beads on a solid immersion lens, and experimentally verified strongly angle-dependent fluorescence intensities due to efficient near-field optical coupling in solid immersion fluorescence microscopy. The results are interpreted in comparison with calculated emission patterns of an emission dipole placed near a solid surface, which establish a basic model for high-collection efficiency in solid-immersion fluorescence microscopy. © 2002 American Institute of Physics.
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  • 22
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 866-869 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The photoluminescence characteristics (peak intensity, peak wavelength and full width at half maximum of the emission band) of p-type porous silicon have been measured as a function of the etching time. Experimental data are discussed in the light of a pore nucleation and growth mechanism recently proposed by the authors. The steps of the formation of the porous layer are clearly apparent in the photoluminescence characteristic evolution. © 2002 American Institute of Physics.
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  • 23
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 889-894 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The ramification of micropipes is observed using scanning electron microscopy, optical microscopy, and synchrotron x-ray radiography. The conditions for the ramification of dislocated micropipes are determined theoretically within a model when the angles between dislocation lines are small. It is shown that the ramification of micropipes into two smaller ones is possible only for micropipes with radii that exceed the equilibrium micropipe radius and is associated with a decrease in the total micropipe surface area. © 2002 American Institute of Physics.
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  • 24
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 870-875 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The structural and optical properties of nitrogenated amorphous carbon films, grown by rf-magnetron sputtering on silicon substrates, were studied by Raman and photoluminescence (PL) spectroscopy as a function of the nitrogen concentration and the substrate bias voltage Vb. For films deposited with Vb=10 V, the photoluminescence emission was most intense at nitrogen concentrations in the carrier gas of 25% (75% Ar), while the intensity ratio I(D)/I(G) of the Raman bands of disordered graphite (D band) and graphite (G band) partially substituted by nitrogen exhibited a minimum simultaneously observed with a minimum of G-band frequency and a maximum of G-band width. Changes in spectral characteristics of Raman scattering at a concentration of 25% (≅30 at %) are indicative of an increase of sp3-bonded fraction and disorder. PL-enhancement coincides, in this case, with structural changes and is probably correlated to the substitution of nitrogen in the tetrahedraly bonded amorphous matrix. In the case of films deposited in a pure nitrogen atmosphere, N2=100%, no significant PL-intensity changes appeared to exist between films deposited at low positive (10 V) and highly negative (−200 V) substrate bias. After several months of sample storage in air, samples grown at negative Vb were found to preserve their structural and optical properties, while films grown at positive bias (Vb=10) and nitrogen concentrations in the carrier gas above 70% (≅40 at %) delaminated. © 2002 American Institute of Physics.
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  • 25
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 876-882 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electromagnetic properties of a thermoplastic natural rubber (TPNR), a lithium–nickel–zinc (Li–Ni–Zn) ferrite and a TPNR–ferrite composite subjected to transverse electromagnetic (TEM) wave propagation were investigated. The incorporation of the ferrite into the matrix of the TPNR was found to reduce the dielectric loss but the magnetic loss increased. The absorption characteristics of all the samples subjected to a normal incidence of TEM wave were investigated based on a model of a single-layered plane wave absorber backed by a perfect conductor. It is evident from a computer simulation that the ferrite is a narrowband absorber, whereas the polymeric samples show broadband absorption characteristics. Minimal reflection of the microwave power or matching condition occurs when the thickness of the absorbers approximates an odd number multiple of a quarter of the propagating wavelength. This is discussed as due to cancellation of the incident and reflected waves at the surface of the absorbers. The Li–Ni–Zn ferrite exhibits another matching condition at low frequency when the magnitude of the complex relative dielectric permittivity (εr*) equals that of the complex relative magnetic permeability (μr*). The specular absorber method provides a simple theoretical graphic aid for determining the absorption characteristics and the location of the matching conditions in the frequency domain. The result for the ferrite sample was tested and confirmed directly from terminated one-port measurements. © 2002 American Institute of Physics.
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  • 26
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 910-913 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature. © 2002 American Institute of Physics.
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  • 27
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 895-901 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Implantation of 240 keV Pb+ ions into a Ni (110) single crystal to a fluence of 1016 cm−2 at room temperature and 470 K, respectively, resulted in the formation of a metastable supersaturated Pb–Ni solid solution with a maximum lead concentration of 2.4 at. %. Rutherford backscattering/channeling analysis and transmission electron microscopy have shown that in the as-implanted state most of the Pb atoms were distributed on substitutional lattice sites in the host matrix while a small fraction of Pb was confined within nanoscale precipitates. Most of the precipitates, with sizes ranging from 2 to 15 nm, were single crystalline although bi-, tri-, and tetracrystals were occasionally observed. Upon heating, decomposition of the metastable alloy was observed, with strong outdiffusion of a large fraction of Pb to the surface. By means of angular scan channeling analysis, the lattice location of the implanted Pb atoms was followed directly during in situ isochronal annealing at different temperatures up to 860 K. Thermally activated formation of Pb atom–vacancy complexes was found to cause originally substitutional Pb atoms to change to different types of lattice site occupation. The regular and distorted substitutional, octahedral interstitial, and random locations of the Pb atoms appeared to be strongly correlated with the temperature of the annealing. © 2002 American Institute of Physics.
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  • 28
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2108-2111 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ferroelectric Pb0.99[(Zr0.6Sn0.4)0.85Ti0.15]0.98Nb0.02O3 (PZSTN) thin films with different preferred orientations were fabricated by modifying with 20 mol % excess lead that contained a Pb(ZrxTix−1)O3 seed layer (x=0,0.3,0.52,0.65). Ferroelectric properties were investigated in terms of the texturing character of the PZSTN thin film. With an increase in Zr content in the seed layer, the (100) texturing of the PZSTN film was enhanced. The highly (100) texture (∼97%) was developed by inserting a seed layer with x=1 between the Pt-coated substrate and the PZSTN thin film, whereas in the case of annealing in a reduced condition, the orientation of the film became nearly (111). The (111)-oriented PZSTN film showed relatively higher remanent polarization compared to that of the (100)-oriented film, while the (100)-oriented PZSTN film showed more fatigue behavior than the (111)-oriented film after 109 switching cycles. The (111)-oriented PZSTN film with rhombohedral structure is believed to be suspected to significant stress along applied field direction, resulting in the production of many defects, causing degradation of the polarization during switching cycles. © 2002 American Institute of Physics.
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  • 29
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2112-2117 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The domain reorientation process in polycrystalline materials was investigated through hysteresis loop measurements in soft and hard lead zirconate titanate (PZT) bulk ceramics. In order to investigate the degree of alignment of domains with the electric field the ferroelectric characterizations were performed in two perpendicular directions for each sample. It was found that for the soft PZT, the kinetics of the fatigue process due to space charges in a specific direction is not affected by the previous fatigue story induced in the other perpendicular one thus showing a fatigue anisotropy. This fact was attributed to no displacement of part of space charges during the electric field switching. However, for the hard PZT, an influence of the previous electric story could be observed due to the continuous realignment of the complex defects perpendicularly to the electric field. © 2002 American Institute of Physics.
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  • 30
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1816-1820 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: One-dimensional photonic crystals made of (Si/SiO2)m multilayers with m=2,...8 have been grown on SiO2 4-in. wafers by repeated polysilicon low-pressure chemical vapor deposition, oxidation, and wet etching steps. The poly-Si and SiO2 layers were about 220 and 660 nm thick, respectively, thus realizing λ/4 distributed Bragg reflectors. Spectroscopic ellipsometry in the 1.4–5 eV range was used to determine the dielectric function of poly-Si and the actual layer thicknesses, as well as to check the structural and compositional homogeneity of the structures. In order to measure the photonic crystal properties, specular reflectance and transmittance measurements were performed from 0.2 to 6 eV at different angles of incidence θ≤50° and for transverse electric and transverse magnetic polarizations. The stop-bands characteristic of Bragg reflector multilayers appear up to the fifth order and become more pronounced with increasing m, reaching almost complete rejection for m=4 periods. The experimental spectra were fitted by the transfer-matrix method, both versus θ and m. Moreover, the experimental stop bands of the finite multilayers matched the calculated photonic band gaps of an infinite one-dimensional photonic crystal very well. © 2002 American Institute of Physics.
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  • 31
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1811-1815 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: X-ray powder diffraction study of the p-type semiconductor Cu2SnSe4 shows that this material crystallizes in the cubic structure, space group F43m, with unit cell parameter a=5.6846(3) Å. The temperature variation of the hole concentration between 120 and 300 K, obtained from the Hall effect and electrical resistivity measurements, is due to the thermal activation of an acceptor level with ionization energy of about 0.02 eV. The temperature variation of the hole mobility is explained by considering the scattering of charge carriers by ionized impurities and acoustic phonons. From this analysis, the density-of-states effective mass of the holes is estimated to be about 0.8 me, me being the free electron effective mass. From the optical absorption spectra, the fundamental absorption edge is found to be direct. The value of the lowest energy gap and the spin-orbit splitting were estimated to be about 0.35 and 0.20 eV, respectively. The temperature dependence of the magnetization measurements shows that Cu2SnSe4 is paramagnetic, indicating that most of the copper atoms have the divalent charge state. © 2002 American Institute of Physics.
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  • 32
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1833-1840 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: ZrO2 films were grown by atomic layer deposition from ZrCl4 and H2O or a mixture of H2O and H2O2 on Si(100) substrates in the temperature range of 180–600 °C. The films were evaluated in the as-deposited state, in order to follow the effect of deposition temperature on the film quality. The rate of crystal growth increased and the content of residual impurities decreased with increasing temperature. The zirconium-to-oxygen atomic ratio, determined by ion-beam analysis, corresponded to the stoichiometric dioxide regardless of the growth temperature. The effective permittivity of ZrO2 in Al/ZrO2/Si capacitor structures increased from 13–15 in the films grown at 180 °C to 19 in the films grown at 300–600 °C, measured at 100 kHz. The permittivity was relatively high in the crystallized films, compared to the amorphous ones, but rather insensitive to the crystal structure. The permittivity was higher in the films grown using water. The leakage current density tended to be lower and the breakdown field higher in the films grown using hydrogen peroxide. © 2002 American Institute of Physics.
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  • 33
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1825-1832 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Simultaneous utilization of ac photoelectromotive (photo-EMF) and modulated photocarrier grating (MPG) techniques for characterization of bipolar transport in semi-insulating photorefractive GaAlAs multiple quantum well structure is reported. From the ac photo-EMF experiment the electrons were determined as the dominant photocarriers for interband optical excitation at λ=633 nm. From the self-consistent data obtained from photo-EMF and MPG experiments the diffusion length of the photoelectrons was evaluated as LD(similar, equals)1.4±0.2 μm, and that of the photoholes (minority carriers)—as LDm(similar, equals)0.6±0.1 μm. In the MPG configuration, the contrast of the illuminating interference pattern was controlled by electro-optic modulation of the signal beam polarization, which allowed us to measure dielectric relaxation time of the photoconductor as well. As evaluated by both techniques it proved to be about τdi(similar, equals)0.05 μs for the average light intensity I0(similar, equals)0.3 mW/mm2. The proposed combination of the characterization techniques seems to be especially promising for amorphous a–Si and polymer films. © 2002 American Institute of Physics.
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  • 34
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 976-978 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Near-field cathodoluminescence (NFCL) has been used to characterize hydride vapor phase epitaxy grown n-GaN films. This technique can obtain high resolution luminescence images and perform local measurements of the diffusion length for minority carriers in different parts of the sample. NFCL contrast observed in round growth hillocks at the sample surface, with a diameter of less than 10 μm, is compared with that observed by conventional cathodoluminescence in scanning electron microscope (CLSEM) techniques. In particular NFCL images reveal features not detected by CLSEM which is explained by the fact that under near field conditions the signal arises from a depth of only several tens of nanometers and is then directly related to the surface hillocks. Diffusion lengths of about 0.4 and 4 μm have been found for the holes in different regions of the samples at room temperature. The order of magnitude of these minority carriers diffusion lengths is in good agreement with previous measurements performed at different GaN samples with other techniques. The NFCL contrast and the differences in the measured diffusion lengths are discussed and explained by variations in local trap concentrations. © 2002 American Institute of Physics.
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  • 35
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1850-1857 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ultrathin Si oxynitride layers were examined by using scanning tunneling microscopy (STM) and spectroscopy (STS). These techniques revealed that a structural change from an intrinsic defect (Si–Si bond) to a damaged structure (Si cluster) takes place under conventional STM/STS conditions. Comparison of the damaged structures formed in the oxynitride with those in the oxide indicated that nitrogen atoms suppress the expansion of the damaged regions. It was also found that nitrogen incorporation enhances both the defect density and the atomic-scale roughness at the oxynitride/Si interface. We suggested that this degradation is related to a local strain produced by the N≡Si3 structures at the oxynitride/Si interface. On the contrary, a normal oxynitride structure had a higher resistance to an electrical stress than an intrinsic defect, but, when the constant electrical stress was applied, the normal oxynitride structure was also damaged. This damage proceeds in two steps: creation of charge traps, and then formation of Si cluster. From these STM/STS results, we proposed that the electrical breakdown of the conventional gate-oxide film proceeds as a four-step process: (1) formation of Si clusters by the damage of intrinsic defects, (2) creation of traps in the normal structure, (3) formation of Si clusters in the normal structure, and (4) complete local breakdown when the Si clusters become connected. © 2002 American Institute of Physics.
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  • 36
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1845-1849 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Raman spectroscopy was used to characterize TiN films deposited by using an off-plane double bend filtered cathodic vacuum arc technique. The influence of substrate bias on the Raman spectra was systematically studied. Four peaks at 235, 320, 440, and 570 cm−1, related to transverse acoustic (TA), longitudinal acoustic (LA), second-order acoustic (2A), and transverse optical (TO) modes of TiN, respectively, were observed in the Raman spectra of TiN films. The intensity of all four peaks and the area fraction as well as the full width at half maximum (FWHM) of the TO peak increase drastically with increasing substrate bias, reaching a maximum at −100 V, and then decrease greatly. However, the area fraction of TA, LA, and 2A peaks, the FWHM of TA and 2A peaks, as well as the frequency of all four peaks decrease rapidly with increasing substrate bias to −100 V, and then increase greatly. At a bias above −200 V, only a slight change in the Raman spectra of TiN films were observed. The change in the N/Ti ratio is the main reason for the evolution in the Raman spectra of TiN films with increasing substrate bias. The internal stress and the crystal size play only a minor role in the Raman spectra of TiN films in the present study. © 2002 American Institute of Physics.
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  • 37
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1858-1861 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have investigated a silicon-based near-infrared photodetector using a waveguide with strong optical confinement. The high-difference index waveguide is obtained with a silicon–on–insulator substrate. The optically active region consists of self-assembled Ge/Si islands embedded in a p-i-n junction. The Ge/Si islands grown by high-pressure chemical-vapor deposition exhibit a broad photoluminescence and electroluminescence which are resonant around 1.5 μm. The photoluminescence and electroluminescence energies are correlated to the island size and to the island composition using a six-band k⋅p calculation. The spectral responsivity of the detectors is measured in a front facet coupling geometry with a broadband source and with semiconductor laser diodes. For a 0 V applied bias, responsivities of 25 and 0.25 mA/W are measured at room temperature at 1.3 and 1.55 μm, respectively. © 2002 American Institute of Physics.
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  • 38
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1862-1867 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The evolution of the Ni/Al(111) interface has been studied in situ by x-ray absorption spectroscopy at the Ni–K edge. Ni films were deposited on bulk Al(111) with thickness ranging from 2 monolayers (ML) up to 30 ML. The aim was to determine the diffusion length of Ni and the phases that have formed. Ni diffused spontaneously at room temperature to a depth that we estimated to be of the order of 11 ML. The structure of Ni/Al(111) mixed interface has been characterized by x-ray absorption spectroscopy. With respect to previous studies on Al(110) the first phase formed on Al(111) is Al3Ni2-like instead of AlNi-like. Accordingly to previous observations, an AlNi3 phase forms on top of Al3Ni2 after the deposition of the first few monolayers. We propose that the pure Ni growth observed after deposition of 11 ML is due to the presence of the AlNi3 aluminide that acts as a diffusion barrier preventing deeper Ni penetration into Al at room temperature. © 2002 American Institute of Physics.
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  • 39
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1868-1872 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We found the dependence of luminescence efficiency on Er3+ concentration and sintering temperature in the Er-doped Ba0.7Sr0.3TiO3 (BST) thin films is governed by crystallinity and ion–ion interaction. X-ray diffraction and Raman studies of the sol-gel prepared samples show that the BST polycrystalline phase occurred when the sintering temperature reaches 700 °C, whereas, it becomes worse for temperature above 700 °C resulting from phase separation and the Er3+ concentration exceeding 3 mol % due to charge compensation mechanism. The observed green emission reaches maximum at sintering temperature 700 °C and 3 mol % Er3+ ions concentration. We also showed the Er dopant does not affect the dielectric property of BST thin films in C–V measurement and the Ba0.7Sr0.3TiO3 films doped with Er3+ ions may have potential use for electroluminescence devices. © 2002 American Institute of Physics.
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  • 40
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1873-1880 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this article a multisample modification of variable angle spectroscopic ellipsometry is used to characterize ZnSe thin films prepared by molecular beam epitaxy on substrates formed by GaAs single crystals. Atomic force microscopy (AFM) is employed to characterize the morphology of the upper boundaries of these films. To interpret the ellipsometric data a relatively complicated physical model that contains a rough overlayer between the ambient and the ZnSe film and a transition layer between the GaAs substrate and the ZnSe film is employed. Several models of dispersion of the optical constants of the overlayers are examined to interpret the ellipsometric data. It is shown that the choice of overlayer dispersion model has a strong influence on determining the optical constants and dielectric function of the ZnSe films in the near-UV region. Within the visible region there are no differences between the overlayer dispersion models regarding determination of the ZnSe optical constants. The spectral dependences of the ZnSe dielectric function obtained are compared with those presented by other researchers. Further, by AFM it is shown that the upper boundaries of the ZnSe films are randomly rough and partially covered with small objects. © 2002 American Institute of Physics.
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  • 41
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1888-1892 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The thermal equilibrium of the formation of negatively charged excitons is studied in this work, by measuring the current and quantum-well photoluminescence in biased resonant tunneling double barrier diodes. We observe that the intensity ratio of negatively charged and neutral excitons depends linearly on the current for fixed temperature and illumination conditions. We propose that the results can be interpreted in terms of a mass-action law governing the concentrations of neutral and charged excitons and free electrons. Measurements at different temperatures and bias yield an electron concentration and a dwell time in the well that are in good agreement with the values previously reported in the literature. We also analyze the dependence of the luminescence on excitation intensity. © 2002 American Institute of Physics.
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  • 42
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1881-1887 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigated the electrical and optical characteristics of beryllium implanted Mg-doped GaN materials. The Mg-doped GaN samples were grown by metalorganic chemical vapor deposition system and implanted with Be ions at two different energies of 50 and 150 keV and two different doses of about 1013 and 1014 cm−2. The implanted samples were subsequently rapidly thermal annealed at 900, 1000, and 1100 °C for various periods. The annealed samples showed an increase of hole concentration by three orders of magnitude from nonimplanted value of 5.5×1016 to 8.1×1019 cm−3 as obtained by Hall measurement. The high hole concentration samples also showed low specific resistance ohmic contact of about 10−3 Ω cm2 and 10−6 Ω cm2 using Ni/Au and Ni/Pd/Au metallization, respectively, without any further annealing process. It is also found from the temperature dependent photoluminescence that the activation energy of Mg dopants of the Be implanted samples has an estimated value of about 170 meV, which is nearly 30% lower than the as-grown samples of about 250 meV. The crystal quality and surface morphology of the Be implanted samples measured by x-ray diffraction and atomic force microscopy show no obvious degradation in the crystal quality and surface morphology. © 2002 American Institute of Physics.
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  • 43
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1893-1897 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Microstructural changes of amorphous V2O5 films with lithium intercalation are studied using Raman-scattering measurements. The Raman spectra of as-deposited films show two broad peaks around at 520 and 650 cm−1, due to the stretching modes of the V3–O and V2–O bonds, respectively, and a relatively sharp peak at 1027 cm−1 due to the V5+(Double Bond)O stretching mode of terminal oxygen atoms. In addition, there is a peak at 932 cm−1 that we attribute to the V4+(Double Bond)O bonds. Comparison of the Raman spectra of V2O5 films with different oxygen deficiencies confirms this assignment. This Raman peak due to the stretching mode of the V4+(Double Bond)O bonds develops and shifts toward lower frequencies with increasing lithium concentration. Comparison to results from gasochromic hydrogen insertion indicates that the 932 cm−1 Raman peak is not a result of vibrations which involve Li or H atoms. We propose that the V4+(Double Bond)O bonds are created by two different mechanisms: a direct conversion from V5+(Double Bond)O bonds and the breaking of the single oxygen bonds involving V4+ ions. © 2002 American Institute of Physics.
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  • 44
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5558-5563 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoinduced reorientation (photon-mode process) and thermal effects in an oligothiophene-doped liquid crystal (LC) system were investigated by self-diffraction measurements in different experimental configurations. The results obtained in homeotropic sample cells were compared with those obtained in homogeneous cells. Optical Freedericksz transition could be induced by low-intensity light in the homeotropic cell, and the induced birefringence was affected by the thermal effect. No photoinduced reorientation effect was observed in the homogeneous cell in the present experimental configuration; however, due to the thermal modulation of the refractive index of the LC, which arises from light absorption, self-diffraction phenomena could also be observed. © 2002 American Institute of Physics.
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  • 45
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5564-5570 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Although in recent years resonant optical nonlinearities in quantum confined silicon generated significant interest, no experimental work has been dedicated to the nonresonant regime, which is the range of interest for optical switching applications. In this article we report a systematic investigation on the different types of optical nonlinearities which can be activated in quantum-sized silicon. In particular, original measurements of nonresonant nonlinear refraction (Kerr effect) are reported at different wavelengths, spanning the infrared middle-gap range. The dispersive scaling rule and values of the nonlinear refractive index are clearly incompatible with those of three-dimensional semiconductors. Hence the quantum confined density of states plays a key role in determining the frequency dispersion of the nonresonant third-order susceptivity χ(3)(ω). Also, this suggests the need of further investigation of the influence of quantum-size effects (and related density of states modifications) on below-gap χ(3). © 2002 American Institute of Physics.
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  • 46
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5587-5591 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this work, the ion-matrix sheath near a target with a rectangular groove is studied analytically. A two-dimensional model with a single groove is adopted. The potential and electric-field profiles within the groove are analyzed to provide insight regarding the uniformity and efficiency of ion implantation on its walls. The deviation of the sheath edge from the planar geometry is also illustrated. © 2002 American Institute of Physics.
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  • 47
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1337-1343 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Bi1−xSbx (x(approximate)0.1) alloy crystals present a high thermoelectric figure of merit at T(approximate)100 K. The alloys are difficult to grow successfully and require special techniques to avoid constitutional supercooling and the resulting segregation. We present a study of the growth of 200 nm wire arrays of Bi–Sb by high-pressure injection of the melt of the alloy in a porous template. We find that the concentration of Sb in the nanowires is much lower than the composition of the starting alloy and discuss the results in terms of a model of constitutional supercooling in restricted geometries. © 2002 American Institute of Physics.
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  • 48
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1317-1328 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electron spin resonance studies have been carried out on the isothermal passivation kinetics in 1 atm molecular H2 of trivalent Si traps (Pbs;Si3(Triple Bond)Si•) at the interface of thermal (111)/Si/SiO2 as a function of oxidation temperature Tox in the range 250–1100 °C. Interpretation within the generalized simple thermal (GST) passivation model, based on first-order interaction kinetics, reveals a distinct increase in spread σEf in the activation energy for passivation Ef with decreasing Tox (∼3 times in the covered Tox window), while the other key kinetic parameters (Ef, preexponential factor) remain essentially unchanged. The variation in σEf is ascribed to differently relaxed interfacial stress, affecting the spread in Pb defect morphology. In a second analytic part, the impact of the variation in Ef, and correlatively in the activation energy Ed for PbH dissociation, on Pb–hydrogen interaction kinetics is assessed within the GST-based full interaction scheme, describing parallel competing action of passivation and dissociation. In particular, the passivation behavior in 1 atm H2 of an initially exhaustively depassivated Pb system, is analyzed exposing, as a major result, that growing spreads σEf, σEd result in a drastic reduction in passivation efficiency (drop by four orders of magnitude for a threefold increase in σEf). For σEf/Ef(approximately-greater-than)20%, the Pb system cannot be inactivated beyond the 90% level, incompatible with device quality requirements. Heating time/temperature vs spread conditions for optimum passivation in H2 have been established, and the technological impact of altering σEf, σEd is discussed. At film edges and trench corners, which are vulnerable local regions of exces stress, and hence enhanced σEf, σEd, an edge defeat effect with respect to passivation is exposed. Within the relentless scaling of Si-based integrated circuit devices, the growing relative impact of edge regions may jeopardize proper passivation of interface traps in the conventional way in future device generations. © 2002 American Institute of Physics.
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  • 49
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1307-1316 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the influence of the carrier gas (hydrogen versus nitrogen) on the morphology and defect characteristics of GaN grown by epitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy (HVPE). Growth was carried out on metalorganic vapor phase epitaxy GaN/sapphire patterned with SiO2 stripes, aligned along the 〈11¯00〉 GaN direction. The cross sections of the ELO-grown stripes change from trapezoidal to triangular with an increase in hydrogen content in the carrier gas due to a change of the ratio of the growth velocities on the {112¯2} and (0001) facets. Transmission electron microscopy observations show that while in stripes with trapezoidal morphology, dislocations from the window region still reach the sample surface, for triangular stripes they are bent in the horizontal direction away from the top surface. Cross-sectional cathodoluminescence (CL) microscopy shows basically two distinct regions of luminescence intensity and nature, one showing near-band gap excitonic emission, the other a high intensity blueshifted emission band which we attribute to e–h plasma recombination, indicating a high local free carrier concentration due to intrinsic defects or impurities. These two regions are correlated with different growth facets and not with the dislocation distribution. An original two-step growth method was developed which exploits this dependence of the morphology on the gas phase composition. In the first step the formation of triangular facets is preferential. This is done to bend the dislocations which have propagated vertically from the seed layer into the horizontal direction. In the second step the layers are planarized using conditions which favor lateral growth. Very good control of the faceting and high reproducibility of the selectively grown structures and layers could be obtained. By using spatially resolved CL measurements carried out on cleaved cross sections of the layers, different domains could be identified and correlated with the growth mode. The ELO layers obtained by two-step growth have significantly reduced dislocation densities of around 2–3×107 cm−2 at the surface, which is comparable to the best values of HVPE ELO GaN reported in the literature. The full width half maximum of the x-ray rocking curve gives values below 200 arcsec. © 2002 American Institute of Physics.
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  • 50
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1344-1350 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this article we report the role of excess interstitials in the end-of-range region in transient enhanced diffusion of boron during annealing of laser-processed samples. The results show that although the amorphous layer in preamorphized silicon can be completely annealed by laser irradiation, the end-of-range damages were not sufficiently annealed. The end-of-range region contains a supersaturation of interstitial defects that enhance the diffusion of boron during a post-laser processing anneal. It is found that the transient enhanced diffusion is significantly suppressed when the melt depth is extended beyond the amorphous layer such that the interstitial dose in the region adjacent to the laser-melted layer is minimized. In this way, the abruptness of laser-processed ultrashallow junctions can be maintained upon further annealing at moderately high temperatures. Cross-sectional transmission electron microscopy shows that a virtually defect-free regrown layer is obtained by overmelting beyond the amorphous layer into the substrate. © 2002 American Institute of Physics.
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  • 51
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1351-1360 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The phase field microelasticity theory of a three-dimensional elastically anisotropic solid of arbitrarily inhomogeneous modulus also containing arbitrary structural inhomogeneities is proposed. The theory is based on the equation for the strain energy of the elastically and structurally inhomogeneous system presented as a functional of the phase field, which is the effective stress-free strain of the "equivalent" homogeneous modulus system. It is proved that the stress-free strain minimizing this functional fully determines the exact elastic equilibrium in the elastically and structurally inhomogeneous solid. The stress-free strain minimizer is obtained as a steady state solution of the time-dependent Ginzburg–Landau equation. The long-range strain-induced interaction due to the elastic and structural inhomogeneities is explicitly taken into account. Systems with voids and cracks are the special cases covered by this theory since voids and cracks are elastic inhomogeneities that have zero modulus. Other misfitting defects, such as dislocations and coherent precipitates, are also integrated into this theory. Examples of elastic equilibrium of elastically inhomogeneous solid under applied stress are considered. © 2002 American Institute of Physics.
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  • 52
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1361-1366 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The diffusion of indium in silicon has been investigated in the temperature range of 800 to 1000 °C by using secondary ion mass spectroscopy and transmission electron microscopy. Our data indicate that, for implants at 150 keV through a thin oxide layer (19 nm), the amount of dopant that leaves the silicon is only controlled by the flow of indium that reaches the surface, being both the segregation coefficient at the interface SiO2/Si and the indium diffusion coefficient in the oxide favorable to the out-diffusion. Comparison between experimental and simulated profiles has evidenced that, besides the expected transient enhanced diffusion occurring in the early phases of the annealing, a heavy loss of dopant by out-diffusion was associated with a high In diffusivity near the surface. Measurements of the hole concentration in uniformly doped silicon on insulator samples performed in the temperature range of 700 to 1100 °C indicate that indium solubility is equal or greater than 1.8×1018 cm−3; this value is higher than those previously proposed in literature. © 2002 American Institute of Physics.
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  • 53
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1367-1371 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ultrafast transient reflecting grating (TRG) spectroscopy was applied to investigate the influence of various defect states on ultrafast carrier dynamics of up to 3 ps duration in an ion-implanted silicon surface region. The TRG spectra revealed the energy-state distribution of two kinds of defect states, and it was observed that photoexcited carriers were trapped in each state depending on annealing time. It was proposed that TRG spectroscopy can be used as an analytical method for characterizing defects in the surface region of semicondcutors. © 2002 American Institute of Physics.
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  • 54
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1372-1379 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Structural properties of carbon films prepared by the pyrolysis of tetra chloro phthalic anhydride are investigated in an attempt to correlate it with the metal–insulator transition observed earlier as a function of deposition temperature, from electrical transport studies. Anomalous features are observed which evolve as the pyrolysis temperature is varied from 700 to 900 °C. This includes prepeaks in the x-ray diffraction pattern in the region less than 1 Å−1 providing evidence for medium range order, and a broad shoulder around 1200 cm−1 in the Raman spectra, which are seen in addition to the usually observed peaks in amorphous carbon films. A simple model is proposed according to which presence of "polymeric domains" containing chains of carbon atoms with single and double bond alternation (–C(Double Bond)C–), in a predominantly aromatic ring structure, could give rise to the anomalous features. © 2002 American Institute of Physics.
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  • 55
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1380-1385 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL), under various excitation intensities and at various temperatures. The PLE spectra demonstrated pronounced excitonic features and the corresponding transitions were identified. At low temperatures the PL spectra were sensitive to the excitation intensity. Under fixed excitation intensity, both the peak energy and the linewidth of photoluminescence showed anomalous temperature dependence, specifically an S-shaped temperature dependence of the peak energy and a N-shaped temperature dependence of linewidth in the PL spectra. The observed results are explained consistently in terms of the exciton localization effect due to the local fluctuations of nitrogen concentration. © 2002 American Institute of Physics.
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  • 56
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1386-1390 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigated the influence of the deposition parameters of SiOx and SiNx capping layers in the plasma-enhanced chemical vapor deposition on the band gap energy shift of the In0.2Ga0.8As/GaAs multiple quantum well (QW) structures induced by impurity-free vacancy disordering. The investigated deposition parameters were deposition pressure, deposition temperature, and rf power. A blueshift of photoluminescence (PL) peak energy up to 161 meV was observed after rapid thermal annealing at 950 °C for 50 s in the samples capped with SiOx deposited at 1.5 Torr. We observed that the blueshift of the PL peak energy increased greatly with the increase of deposition pressure and slightly with the decrease of deposition temperature. The influence of rf power was found to be negligible. All these dependences were related to the porosity in the dielectric capping layers in the QW intermixing. © 2002 American Institute of Physics.
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  • 57
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5661-5665 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Taking a tradeoff between channel carrier mobility and overall k value into account, compositionally graded ultrathin (1–2 nm) hafnium silicate has been investigated and suggested as an interfacial layer for an alternative high-permittivity (high-k) gate dielectric. Attempts to confirm whether a compositional gradation could occur in such a thin thickness range were performed by thermal annealing of 1-ML-thick Hf deposited on 1-nm-thick SiO2 in an ultrahigh vacuum chamber. Compositionally graded features varying from topmost HfOx-like to SiO2-like at the interface with Si could be analyzed with subnanometer resolution by scanning tunneling microscopy utilizing a local variation in the position of the conduction-band minimum within the insulator band gap as an identifier. © 2002 American Institute of Physics.
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  • 58
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5666-5670 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: LiCaAlF6 (LiCAF) single crystals pure and doped with MgF2 and BaF2 were successfully grown by the Czochralski technique. Optical absorption measurements in the UV/Visible spectral regions following x-ray irradiation (radiation induced absorption) were performed in order to investigate the radiation damage of the crystals. The F-center absorption band at 262 nm is the dominating induced absorption feature. The amplitude of the F-absorption band is suppressed by more than a factor of 3 in Mg-doped LiCAF compared to undoped, while for Ba-doped LiCAF, almost no variation is obtained. In Mg-doped crystals the optimum doping concentration is of about 0.2 mol % of MgF2 in the melt. © 2002 American Institute of Physics.
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  • 59
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5671-5676 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: To study the mobility and lifetime of charge carriers in thin film polycrystalline silicon deposited by hot-wire chemical vapor deposition, time-resolved microwave conductivity measurements have been performed. Using this technique the change in conductivity in the polycrystalline silicon films after pulsed excitation can be monitored on a nanosecond time scale, without the use of electrodes. Due to the different penetration depths of the laser wavelengths used (320, 500, and 690 nm) combined with illumination from different sides, the photoconductivity in different regions within the sample can be measured. Four different samples of polycrystalline silicon deposited on Corning glass have been studied: Poly1 (highly defective), Poly2 (device quality) and profiled layers of Poly1 and Poly2. For front or back illumination, the conductivity transients for the Poly1 film are very similar and show that lifetimes of the charge carriers generated are less than 1 ns. For the Poly2 film the mobility in the interfacial substrate region (μ=0.17 cm2/V s) is more than 1 order of magnitude lower than in the top region (μ=3.8 cm2/V s). The formation of a thin Poly1 film on the surface of the Corning substrate, acting as a seed layer for the Poly2 layer, followed by the deposition of the Poly2 layer, results in only a relatively small increase in the mobility in the region close to the substrate as compared to the bare Poly2 layer, while the mobility in the top region remains approximately constant. © 2002 American Institute of Physics.
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  • 60
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5686-5693 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have performed numerical calculations to study the generation of arbitrary temperature profiles with high spatial resolution on the surface of a solid. The characteristics of steady-state distributions and time-dependent heating and cooling cycles are examined, as well as their dependence on material properties and device geometry. Ideally, low-power consumption and fast response times are desirable. The simulations show that the achievable spatial resolution is on the order of the substrate thickness and that the response time t+ depends on the width of the individual heating elements. Moreover, the rise time t+ can be significantly shortened by deposition of a thermal insulation layer, which also reduces the power consumption and increases lateral resolution. © 2002 American Institute of Physics.
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  • 61
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1548-1554 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The deposition of homogeneous thin films on porous substrates has been investigated. The thin film deposition of Ta(N) by physical vapor deposition on porous films with different average pore sizes and material compositions has been studied. The continuity of Ta(N) films on top of porous low-k dielectrics is evaluated by means of ellipsometric porosimetry combined with sheet resistance and atomic force microscopy measurements. Interface reactions are analyzed by x-ray photoelectron spectroscopy profiling. It has been observed that the minimal Ta(N) thickness required to obtain a continuous metal layer on top of the porous film depends, on the one hand, on the porosity and pore size and, on the other hand, on the chemical interaction of the thin film with the porous substrate. The sealing of pores is favored by the presence of carbon in the dielectric matrix. This is explained through a mechanism of local enhancement of the degree of crosslinking in the dielectric matrix, catalyzed by Ta. © 2002 American Institute of Physics.
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  • 62
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1555-1563 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoacoustic spectroscopy is an absorption spectroscopy technique that is currently used for low-level gas detection and catalyst characterization. It is a promising technique for chemical analysis in mesoscale analysis systems because the detection limit scales favorably with miniaturization. This work focuses on the scaling properties of photoacoustic spectroscopy, and on the miniaturization of gas-phase photoacoustic detection of propane in a nitrogen ambient. The detection system is modeled with a transmission line analogy, which is verified experimentally. The model includes the effects of acoustic leaks and absorption saturation. These two phenomena degrade the performance of the photoacoustic detector and must be controlled to realize the scaling advantages of photoacoustic systems. The miniature brass cells used to verify the model employ hearing aid microphones and optical excitation from a mechanically chopped, 3.39 μm He–Ne laser, transmitted into the cells with an optical fiber. These cells are able to detect 10 ppm of propane in nitrogen (a signal level of ∼1 Pa/W). We also describe the development of a miniaturized photoacoustic system formed by microfabrication. In this case, the pressure-driven deflection of the detection membrane is measured optically. These systems show that photoacoustic detection may be inappropriate for systems with large variations in gas concentration because of absorption saturation and changing gas acoustic properties. Nevertheless, photoacoustic spectroscopy is a promising technique for the analysis of dilute mixtures in miniature chemical systems. © 2002 American Institute of Physics.
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  • 63
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5700-5705 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The propagation characteristics of surface transverse waves (STW) in polymer-coated surface gratings on rotated Y-cut quartz substrates are studied theoretically. A two-layer Love wave theory is combined with Floquet analysis to derive the wave dispersion and attenuation. The thickness of the polymer layer is found to affect the position and width of the frequency stop band, while the polymer viscosity introduces out-of-band attenuation. Both parameters effectively act in the vicinity of the lower-stop-band edge where STW resonators are mostly operated. The presented algorithm is applicable to the analysis of STW gas sensors and to the improvement of the resonator performance. © 2002 American Institute of Physics.
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  • 64
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5706-5711 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electroluminescent (EL) features of oligothiophenes dispersed as a dopant in the host matrices comprising tris(8-hydroxyquinoline)aluminum have been investigated. We chose the oligothiophenes that are substituted with phenyl or methyl groups at both the molecular terminals and possess various degrees of polymerization. Regarding both the phenyl- and methyl-substituted materials, the EL spectra are progressively red-shifted with the increasing number of thiophenes. Comparing these spectra with the photoluminescent spectra, we have found out that the EL arises mostly from the dopant molecules of the oligothiophenes. The emission is dominated by energy transfer from host matrices to the dopant molecules, leading to the enhanced device efficiencies. The specific effects of the phenyl- or methyl-substitution and the extension of the π-delocalization in the molecules are also discussed. © 2002 American Institute of Physics.
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  • 65
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5712-5715 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The formation and growth of bubbles within dark spots in organic light-emitting diodes comprised of an electroluminescent polymer and a Ca–Ag cathode have been observed and studied. Our studies indicate that electric stress and pinholes are two important parameters affecting the formation of bubbles. More detailed analysis reveals the dependence of bubble area on the pinhole diameter. © 2002 American Institute of Physics.
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  • 66
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2198-2201 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this article, we report the results of a study of the effects of high-temperature stress annealing in nitrogen on the electrical properties of metal/oxide/semiconductor devices. In this study, we have experimentally characterized the dependence of the reduced effective contact-potential difference, the effective oxide charge (Neff), and the midgap interface trap density (Dit) on the annealing conditions in nitrogen. We have correlated such properties with the dependence of the index of refraction and oxide stress on the annealing conditions and oxide thickness in a companion article. We consider the contributions of the thermal-relaxation and nitrogen-incorporation processes in determining changes in the electrical properties with annealing time. This model description is consistent with other annealing studies carried out in argon where only the thermal-relaxation process is present. © 2002 American Institute of Physics.
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  • 67
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2181-2193 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A two-stage computational model of evolution of a plume generated by laser ablation of an organic solid is proposed and developed. The first stage of the laser ablation, which involves laser coupling to the target and ejection of molecules and clusters, is described by the molecular dynamics (MD) method. The second stage of a long-term expansion of the ejected plume is modeled by the direct simulation Monte Carlo (DSMC) method. The presence of clusters, which comprise a major part of the overall plume at laser fluences above the ablation threshold, presents the main computational challenge in the development of the combined model. An extremely low proportion of large-sized clusters hinders both the statistical estimation of their characteristics from the results of the MD model and the following representation of each cluster size as a separate species, as required in the conventional DSMC. A number of analytical models are proposed and verified for the statistical distributions of translational and internal energies of monomers and clusters as well as for the distribution of the cluster sizes, required for the information transfer from the MD to the DSMC parts of the model. The developed model is applied to simulate the expansion of the ablation plume ejected in the stress-confinement irradiation regime. The presence of the directly ejected clusters drastically changes the evolution of the plume as compared to the desorption regime. A one-dimensional self-similar flow in the direction normal to the ablated surface is developed within the entire plume at the MD stage. A self-similar two-dimensional flow of monomers forms in the major part of the plume by about 40 ns, while its counterpart for large clusters forms much later, leading to the plume sharpening effect. The expansion of the entire plume becomes self-similar by about 500 ns, when interparticle interactions vanish. The velocity distribution of particles cannot be characterized by a single translational temperature; rather, it is characterized by a spatially and direction dependent statistical scatter about the flow velocity. The cluster size dependence of the internal temperature is mainly defined by the size dependence of the unimolecular dissociation energy of a cluster. © 2002 American Institute of Physics.
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  • 68
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2202-2206 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this article, we report the results of a study of the effects of high-temperature stress annealing in nitrogen on the index of refraction of SiO2 layers in metal/oxide/semiconductor (MOS) devices. In this study, we have experimentally characterized the dependence of mechanical stress in the Si–SiO2 system on the oxidation and annealing conditions and correlated such properties with the dependence of the index of refraction on processing conditions and oxide thickness. We consider the contributions of the thermal-relaxation and nitrogen-incorporation processes in determining changes in the index of refraction with annealing time. This description is consistent with other annealing studies carried out in argon where only the thermal-relaxation process is present. Correlations of these experimental observations with the electrical properties of the same MOS devices are presented in a companion article. © 2002 American Institute of Physics.
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  • 69
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2207-2209 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Crystalline silicon microcavities resonant at 1.1 μm were fabricated by using submicron thick Si membranes from a silicon on insulator substrate. These membranes were composed of a single crystalline Si film layered above and below two thin silicon dioxide layers. The low temperature photoluminescence (PL) of the membranes originated from the electron–hole condensed phase, which is characteristic of ultrapure crystalline silicon. The microcavities are then formed by depositing dielectric mirrors on both sides of the membranes. Optical properties of microcavities are studied by optical transmission and PL spectroscopy. The Si PL spectrum is strongly modified by the cavity: at the resonance the PL linewidth is reduced by a factor 3 and the emission is highly angle dependent. © 2002 American Institute of Physics.
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  • 70
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2213-2215 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the enhancement of ferroelectric properties in vanadium-doped Bi4Ti3O12 (BIT) thin films deposited by a sol–gel method. Compared to the undoped BIT, V-doped BIT (BTV) showed higher polarizations and a better fatigue resistance as reported in ceramic systems recently [Noguchi et al., Appl. Phys. Lett. 78, 1903 (2001)]. BTV showed a remanent polarization (2Pr) of 15.9 μC/cm2, higher than the value for BIT, 12.5 μC/cm2. The polarization of the BTV thin film capacitor decreased by 19%, while that of the BIT decreased by 23% after the fatigue test with 4×1010 switching cycles. © 2002 American Institute of Physics.
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  • 71
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5760-5764 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have used vapor etching of ion tracks to create high aspect ratio (i.e., length much greater than diameter), isolated cylindrical holes through ∼600-nm-thick films of thermally fused silica on silicon. Samples were exposed to the vapor from water-based liquids with various HF and HF+HCl concentrations. Independent control of the temperatures of the vapor and the samples provided the means to vary separately the etching rates for the tracks and the track-free material. The very rapid etching of the small latent track zone can be explained by preferential capillary condensation. Holes with diameters of ∼24 to ∼80 nm have been documented with length/diameter ratios of up to 22. Although we have restricted this study to thin-film silica, we have evidence that such holes are also formed in bulk fused silica. © 2002 American Institute of Physics.
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  • 72
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5775-5781 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The velocities of longitudinal and transverse waves for aluminum alloy 2024-T62 shocked by a high-power Nd: Glass laser are investigated by a laser ultrasonics method. The results show that the velocity of the longitudinal wave measured after the laser-shock processing increases at the center and decreases at the edge of the laser-shocked area (LSA). The maximum relative increase is 28% and the maximum decrease up to 10%, when compared with that measured before the alloy was shocked by laser processing. The velocity of the transverse wave decreases at any position within LSA, the maximum relative decrease being 13%. The decrease at the edge of LSA is larger than that at the center. © 2002 American Institute of Physics.
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  • 73
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1619-1629 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The use of two-dimensional (2D) distributed feedback is considered as a method of providing spatially coherent radiation from an oversized annular electron beam. To realize the feedback mechanism, 2D Bragg structures formed from doubly-corrugated waveguide sections of coaxial geometry are suggested. The properties of two types of coaxial cavities formed using such structures are compared: a single-section 2D Bragg cavity and a two-mirror cavity. The eigenmodes of both cavities are found and their high selectivity over both azimuthal and longitudinal indices was demonstrated. Time-domain analyses of the excitation of the cavities by an annular electron beam were carried out. The influence of the cavity parameters on the oscillation regime is analyzed and discussed. It was shown that for a specific set of 2D Bragg cavity parameters it is possible to obtain a regime of steady-state oscillations when the transverse size of the beam exceeds the wavelength by a few orders of magnitude, while outside this parameter space multimode oscillation takes place. The design of a 2D Bragg free-electron maser oscillator based on a high-current accelerator at the University of Strathclyde is discussed. © 2002 American Institute of Physics.
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  • 74
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    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5782-5786 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Lead sulfide (PbS) thin films were deposited from a chemical bath onto SiO2/Si (n-type) substrates. Pseudo-metal–oxide–semiconductor devices were obtained by evaporating source and drain gold electrodes on a PbS surface and aluminum gate electrode on a Si substrate. Field-effect-assisted photoconductivity in the PbS layer was investigated at room temperature, in the 800–2700-nm-wavelength domain for different values and polarities of the drain and gate voltages. The best results were obtained for a positive gate, when both semiconductors are in depletion. An enhancement of about 25% of the photoconductive signal is obtained compared with the case when the gate electrode is absent or is not used. A simple model is proposed that explains the behavior of the dark current and photoconductive signal in PbS film with changing the gate voltage. © 2002 American Institute of Physics.
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  • 75
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5787-5795 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Resistance saturation as a function of current density, stripe length, stripe width, and temperature is investigated for a two-level structure with Ti/AlCu/Ti/TiN stripes and interlevel W stud vias. A simple model based on first principles is presented, which relates the maximum fractional resistance change to the current density and stripe length. Experimental results for stripe lengths of 30, 50, 70, and 100 μm are in good agreement with the model predictions. Estimated void sizes based on the resistance saturation data are consistent with the actual void sizes determined from scanning electron microscopy analysis. A weak temperature dependence is found for 0.33 μm-wide samples in the range 170–250°C, while a strong width dependence is observed between 0.33 and 1.50 μm- wide samples. The width dependence is qualitatively explained in terms of a relaxed bulk modulus that depends on the aspect ratio of the interconnect lines. © 2002 American Institute of Physics.
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  • 76
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5796-5801 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Longitudinal optical phonon assisted relaxation of excitons involving intersubband transitions is studied in quantum wells. Considering the relaxation of an exciton from a higher subband to a free electron–hole pair in lower subbands by longitudinal optical phonon emission, we calculate the rate of relaxation as a function of exciton density, temperature, and wave vector K(parallel) of the center-of-mass of exciton in quantum wells. The theory is finally applied to GaAs quantum wells and results are compared with experiment. © 2002 American Institute of Physics.
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  • 77
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4409-4417 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We study the effects of the magnetic field on the relaxation of the magnetization of small monodomain noninteracting particles with random orientations and distribution of anisotropy constants. Starting from a master equation, we build up an expression for the time dependence of the magnetization which takes into account thermal activation only over barriers separating energy minima, which, in our model, can be computed exactly from analytical expressions. Numerical calculations of the relaxation curves for different distribution widths, and under different magnetic fields H and temperatures T, have been performed. We show how a T ln(t/τ0) scaling of the curves, at different T and for a given H, can be carried out after proper normalization of the data to the equilibrium magnetization. The resulting master curves are shown to be closely related to what we call effective energy barrier distributions, which, in our model, can be computed exactly from analytical expressions. The concept of effective distribution serves us as a basis for finding a scaling variable to scale relaxation curves at different H and a given T, thus showing that the field dependence of energy barriers can be also extracted from relaxation measurements. © 2002 American Institute of Physics.
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  • 78
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4421-4425 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electrical, magnetic, and transport properties of Cu-doped polycrystalline samples Sr2Fe1−xCuxMoO6 with ordered double perovskite structure have been investigated systematically. Analysis of the x-ray powder diffraction pattern based on the Rietveld analysis indicates that the substitution of Fe3+ ions by Cu2+ ions enhances the site location order of Fe, Cu, and Mo on the B site for the high-doping-level samples (x=0.20, 0.25, 0.30). With increasing doping level, a transition from semiconductor to metal behavior was also found to occur. Furthermore, the transition temperature was found to decrease either by the application of a magnetic field or by increasing the doping level. It can be concluded that the existence of Cu2+ ions induces the occurrence of Fe3+δ ions and the double exchange interaction in Fe3+–O–Mo–O–Fe3+δ. The transport mechanism in these samples can be attributed to the competition between the metal phase and the semiconductor phase arising from the doping of Cu2+ ions. Both the semiconductor-to-metal transition and the magnetoresistive behavior can be explained by the percolation threshold model. © 2002 American Institute of Physics.
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  • 79
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4426-4431 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The half power ferromagnetic resonance (FMR) linewidth ΔH has been measured from 8 to 300 K for a nominal frequency of 61 GHz and from 50 to 75 GHz at room temperature for normally magnetized single crystal platelets and pulsed laser deposited (PLD) films of barium ferrite. The platelet linewidth versus temperature data show a peak value of 27 Oe at 25–30 K, a dip to 21 Oe at 75 K, structure related to line merging at 130–160 K, and a region of slow increase at 240–295 K. The 240 –300 K data extrapolate to a 0 K linewidth of about 8 Oe. The corresponding film data show a peak value of 240 Oe at 20 K and a gradual decrease at higher temperatures. Both the platelet and film linewidths show a weak frequency dependence at about 0.3 Oe/GHz at room temperature (RT). The film data also show several linewidth spikes due to interference effects between the FMR response and dielectric resonances in the substrate. The RT linewidth zero frequency intercepts for the platelet and the film were 9 and 30 Oe, respectively. The frequency dependence of the platelet linewidth was also examined at 230–295 K. The frequency responses and intercepts for these data were affected by the line merging at lower temperatures and showed high temperature limit values of 0.35 Oe/GHz and 9.5 Oe, respectively. The linewidth frequency response in both cases is attributed to conductivity. The linewidth versus temperature peaks are attributed to impurities. The linewidth dip at 75 K for the platelet results from the drop in ΔH on the tail of the temperature peak and an increase associated with iron ion hopping motion. © 2002 American Institute of Physics.
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  • 80
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1221-1226 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thermoluminescence (TL), optical absorption, and electron paramagnetic resonance (EPR) have been used to characterize point defects in Mg-doped stoichiometric LiNbO3. A broad TL emission, peaking at 440 nm, is observed near 94 K when these crystals are irradiated at 77 K and then rapidly warmed. X rays and below-band-gap lasers (325 and 355 nm) are equally effective in producing the TL peak. During excitation, holes are trapped on oxygen ions adjacent to lithium vacancies and electrons are trapped on niobium ions at regular lattice sites. These defects both have characteristic EPR spectra, and the trapped electron center has an optical absorption band peaking at 1200 nm. Upon warming, the electrons become thermally unstable near 94 K and migrate to the trapped-hole sites where radiative recombination occurs. We suggest that the near-edge charge-transfer absorption band from Fe3+ impurities, nominally present, provides the mechanism by which below-band-gap light initially produces the separately trapped holes and electrons. © 2002 American Institute of Physics.
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  • 81
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1227-1231 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present a theoretical study, within the effective-mass approximation, of the magnetoabsorption spectra of intraexcitonic terahertz transitions of light-hole and heavy-hole confined magnetoexcitons in GaAs-(Ga,Al)As quantum wells. The semiconductor quantum wells are studied under magnetic fields applied in the growth direction of the semiconductor heterostructure. The various magnetoexciton states are obtained in the effective-mass approximation by an expansion of the exciton-envelope wave functions in terms of products of hole and electron quantum-well states with appropriate Gaussian functions for the various excitonic states. Intramagnetoexciton transitions are theoretically studied by exciting the allowed excitonic transitions with σ+ (or σ−) far-infrared radiation circularly polarized in the plane of the GaAs-(Ga,Al)As quantum well. Theoretical results are obtained for the intramagnetoexciton transition energies and magneto-absorption spectra associated with excitations from 1s-like to 2p±, and 3p±-like magnetoexciton states, and found in overall agreement with optically detected resonance measurements. © 2002 American Institute of Physics.
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  • 82
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1232-1237 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Interface reactions in Si/SiOx(Ny)/ZrO2 and Si/SiOx(Ny)/ZrO2/poly-Si gate stacks have been studied by high-resolution transmission electron microscopy. In the case of an uncapped stack ZrSi and ZrSi2 phases form during an ultrahigh vacuum anneal at temperatures above 900 °C. Both phases show an island-type growth with an epitaxial relationship with Si (100). Gate dielectric stacks with a poly-Si cap are found to be thermally unstable at T=1000 °C, so that the reaction is initiated at the ZrO2/poly-Si interface. Here a different reaction mechanism is identified, which involves the reduction of ZrO2 and the growth of a bottom interfacial layer between ZrOx and Si. Replacement of the bottom SiO2 layer by an ultrathin Si oxinitride does not completely suppress these interfacial reactions at T≥1000 °C. We suggest that control of the poly-Si/ZrO2 interfacial reactions may be an important factor in modifying the thermal stability of a stack. These results shed a new light on understanding the material challenges involved in the integration of ZrO2 for the next generation of complementary metal–oxide–semiconductor technologies. © 2002 American Institute of Physics.
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  • 83
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1242-1247 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The chemical composition, structural, and optical properties of nitrogenated tetrahedral amorphous carbon (ta-C:N) films deposited by a pulsed filtered vacuum arc deposition system were characterized by non-Rutherford backscattering spectroscopy, Raman spectroscopy, and ultraviolet-visible spectroscopy. It was observed that the amount of nitrogen atoms incorporated into the ta-C:N films, as well as the sp2 fraction of the films, increased with increasing nitrogen pressure PN during deposition. As a result, the optical band gap of the ta-C:N films also decreased with increasing PN. At a fixed nitrogen partial pressure of 4×10−3 Pa, the nitrogen content was found to first increase with increasing substrate negative bias voltage (−Us), up to a maximum of about 14.5 at. % at −Us of 100 and 150 V, then decreases with further increase of −Us. The sp2 fraction however increased monotonically with increasing −Us. The optical band gap of the ta-C:N films initially increased with increasing −Us, up to a maximum at a certain −Us, and then decreased with further increase in −Us. The variation of the optical band gap with the negative substrate bias voltage was discussed in terms of the different sp2-bonded carbon configurations existing in the films and the graphitization of the ta-C:N films, as indicated by the Raman and density measurement results. © 2002 American Institute of Physics.
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  • 84
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1399-1405 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Clear evidence for ballistic transport has been observed at 5 K from silicon vertical transistors with wrap around gates. The effect of channel shape was investigated experimentally and accounted for theoretically by the anisotropy of the Si conduction band. A reduction in conductance and the appearance of multiple steps were observed when a magnetic field was applied perpendicular to the channel. These results were successfully modeled within the effective mass approximation by including the magnetic vector potential and effects due to series resistance and the spin and valley degeneracy. © 2002 American Institute of Physics.
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  • 85
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1406-1410 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: La0.67Ca0.33Mn1−xCuxO3 (x=0 and 0.15) epitaxial thin films were grown on the (100) LaAlO3 substrates, and the temperature dependence of their resistivity was measured in magnetic fields up to 12 T by a four-probe technique. We found that the competition between the ferromagnetic metallic (FM) and paramagnetic insulating (PI) phases plays an important role in the observed colossal magnetoresistance (CMR) effect. Based on a scenario that the doped manganites approximately consist of phase-separated FM and PI regions, a simple phenomenological model was proposed to describe the CMR effect. Using this model, we calculated the resistivity as functions of temperature and magnetic field. The model not only qualitatively accounts for some main features related to the CMR effect, but also quantitatively agrees with the experimental observations. © 2002 American Institute of Physics.
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  • 86
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1419-1424 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electronic structures of Ni3Al, Ni3Ga, Ni3In, and NiGa are studied by x-ray absorption near-edge spectra (XANES) at the Ni and Ga K edges. The XANES spectra are compared with those calculated with theory. The experimental XANES features for these compounds reflect the Ni- and Ga-p unoccupied density of states. The calculated magnetic moments for Ni3Al, Ni3Ga, and Ni3In are between 0.7–0.8 μB/cell. The number of 3d holes per Ni atom is calculated for Ni3Al, Ni3Ga, and Ni3In. These numbers show correlation with heats of formation of the bulk compounds. © 2002 American Institute of Physics.
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  • 87
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    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1431-1433 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A k⋅p model is used to theoretically investigate the energy and lattice temperature dependence of both transverse and longitudinal "curvature" electron effective masses in silicon. The temperature dependence of the carrier concentration conduction effective masses in the range of 10–550 K is also examined. Our results highlight the energy dependence of the longitudinal effective mass, usually considered to be equal to the band-edge effective mass, which varies from 0.917 to 1.6m0 when the carrier energy ranges from the bottom of the conduction band up to 1.5 eV. This energy dependence should have a significant impact on electronic transport simulations using drift–diffusion, hydrodynamic, or Monte Carlo methods, particularly for hot-carrier phenomena in microelectronic devices. © 2002 American Institute of Physics.
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  • 88
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1425-1430 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High efficiency thermoelectric conversion is achieved by using materials with a maximum figure of merit Z=S2σ/k, where S is the Seebeck coefficient, σ and k, the electrical and thermal conductivities, respectively. High quality homogeneous thermoelectric materials, based on PbTe crystals, usually display an elevated value of Z over a narrow temperature range. A maximal value of figure of merit Z, as a function of electron density, is attained only for one specific location of the Fermi level, EF, with respect to the conduction band edge, EC. In order to maintain this optimal Z value, namely, maintain a constant location of the Fermi level, the electron density, which is determined by the dopant concentration, must increase with increasing temperature. We present a method for the generation of a dopant (indium) concentration profile in n-type PbTe crystals that gives rise to a constant location of the Fermi level, and hence, to an optimal value of Z over a wide temperature range. The resulting functionally graded material, based on PbTe〈In〉, displays a practically constant value of the Seebeck coefficient, over the 50–600 °C temperature range. © 2002 American Institute of Physics.
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  • 89
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    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1434-1440 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using scanning tunneling microscopy and spectroscopy we have studied both the geometric distribution and the conduction properties of organic shell capped CdSe nanocrystals adsorbed on hydrogen-passivated Si(100). At submonolayer concentrations, the nanocrystal distribution on the surface was found to be highly nonhomogeneous, with an aggregation of most of the nanocrystals into islands of monolayer thickness. I–V spectra collected on nanocrystals adsorbed on n- and p-type substrates showed a strong difference in the conduction behavior, caused by the substrate: CdSe nanocrystals on n-Si:H caused a widening of the surface band gap by 1 eV with respect to the gap of the substrate, while a significant narrowing of the gap was observed for nanocrystals on p-Si:H. This experimental result could be explained by modeling the system as a metal–insulator–semiconductor (MIS) diode. Using this model we have found that the current through the MIS junction is limited by the nanocrystals only in one bias direction, while in the other bias direction the current is limited by the semiconducting substrate. This property may be of relevance for the construction of hybrid electronic devices combining semiconductor electrodes with nanoscale elements such as nanocrystals or organic molecules. © 2002 American Institute of Physics.
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  • 90
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5902-5908 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on the effect of rapid thermal annealing (RTA) on the photoluminescence (PL) properties of GaNxAs1−x/GaAs structures. In particular, a blueshift of the PL peak energy is observed when annealing the samples. The results are examined as a consequence of a RTA-induced nitrogen diffusion inside the GaNxAs1−x material rather than diffusion out of the alloy, which homogenizes initial nitrogen composition fluctuations. We propose a simple model that describes the RTA-induced blueshift of the low temperature PL peak energy. This model is in good agreement with experimental results and is consistent with recent studies in which lateral composition fluctuations in the GaNAs alloy were reported. © 2002 American Institute of Physics.
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  • 91
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5909-5914 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A quadratic dependence of the band gap energy on the alloy composition x was quantified for CuAl(SxSe1−x)2 films grown by low-pressure metalorganic vapor phase epitaxy, by means of photoreflectance and photoluminescence excitation spectroscopies. The bowing parameter for the A-exciton energy was estimated to be 0.20 eV. Several high-quality films grown on GaAs(001) substrates exhibited excitonic photoluminescence peaks in the blue to ultraviolet spectral ranges. The flow rate of the Al precursor was found to affect the incorporation ratio of S/Se, indicating that the Al–S compound plays a key role in controlling x. All films grown on GaAs(001) showed c(001) orientation. Conversely, the epitaxitial orientation of the films on GaP(001) changed from a(100) to c(001) with an increase in x. The critical value of x was around 0.5. The preferred orientations were explained by the natural selection rule under which the lattice strain in the epilayer is minimized. The residual strain in the 0.5-μm-thick epilayers on GaAs(001) was nearly constant for all x, although the lattice mismatch between the epilayer and the GaAs substrate varied from 0.62% to 5.39% with an increase in x. Consequently the strain was attributed to thermal stress. © 2002 American Institute of Physics.
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  • 92
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5923-5928 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The reactivation kinetics of the acceptor behavior of carbon, its dependence on dopant precursors, doping level, layer thickness, and annealing temperature, as well as the behavior of carbon-hydrogen complexes in GaAs grown by metalorganic chemical vapor deposition are studied. Independent of the carbon source, in the "as grown" material, systematically carbon hydrogen complexes are present and the hole concentration is lower than the corresponding carbon concentration. The carbon reactivation kinetics was achieved by ex situ rapid thermal annealing through a series of multistage annealing experiments and assessed at each annealing stage by infrared absorption, hydrogen secondary ion mass spectroscopy profiling, and hole concentration measurements. Carbon reactivation occurs solely by the debonding of hydrogen from the isolated carbon acceptor and its out-diffusion from the sample. The carbon reactivation kinetics can be treated as a first order one with an activation energy, Ea=1.42±0.01 eV, independent of doping precursors, doping level, and layer thickness. The reactivation constant results to decrease as doping level and layer thickness increase. An empirical formula has been obtained that allows one to calculate the reactivation constant as a function of the carbon doping, layer thickness, and annealing temperature, allowing one to determine the optimal carbon reactivation conditions for any C:GaAs layer. © 2002 American Institute of Physics.
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  • 93
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    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5940-5944 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the temperature and magnetic field dependence of the resistivity of La2/3Sr1/3MnO3 thin film over a wide temperature range and in high magnetic fields up to 20 T. Both above and below the ferromagnetic (FM) transition, the field dependence of the magnetoresistance (MR) can be described well using the extended Mott hopping conduction model. The large MR is proportional to the Brillouin function BJ in the FM phase and to BJ2 in the paramagnetic state which is consistent with this model. The value of spin moment J deduced from the temperature and magnetic field dependence of the MR is large (∼60) in the vicinity of the FM transition. This large value of J has been attributed to the presence of magnetic clusters due to the short-range FM ordering. © 2002 American Institute of Physics.
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  • 94
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5945-5950 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Magnetic domain structures on single-crystalline magnetite (Fe3O4) particles, prepared by microfabrication techniques from molecular-beam epitaxial (110) magnetite films grown on MgO, were studied by magnetic force microscopy. The (110) magnetite film thickness was 250 nm and the patterned particles ranged in size from 2×2 to 10×10 μm. The patterned particles showed in-plane, stripe-like domain structures with ill-defined and fragmented walls mainly aligned along the in-plane [110] direction. In both the parent film and the patterned particles, an out-of-plane component of the stray field was observed within domain interiors as a fine-scale (100–300 nm) and spatially variable magnetic contrast present in both the remanent state and in applied fields. Individual wall sections were observed to be highly fragmented with variable widths (100–300 nm) and offsets and subdivided into opposite polarity segments of variable lengths. Remagnetization of a 10×10 μm particle in fields up to 500 Oe occurred by reverse spike domain nucleation at the edge of the particle followed by growth and propagation towards the interior of the particle similar to classical behavior of uniaxial materials. In contrast, the unusual domain wall structures are a consequence of the antiferromagnetically coupled, growth-induced, structural antiphase domains and antiphase boundaries (APB) know to form in epitaxial thin films of magnetite. Magnetically, the particles behave differently at the different length scales. A particle as a whole (micrometer length scale) behaves as a magnetically uniaxial object, but on a smaller length scale (submicron scale), the magnetic microstructure is strongly influenced by the antiphase structural domains. Analysis of the domain spacing as a function of particle size yields an estimate of the average exchange stiffness constant that is nearly 2 orders of magnitude lower than the value in bulk magnetite. This is consistent with the idea that exchange interactions across the APBs are severely suppressed due to spin frustration. © 2002 American Institute of Physics.
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  • 95
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    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5972-5978 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Barium strontium titanate (Ba0.8Sr0.2TiO3) thin films have been prepared on Pt/Ti/SiO2/Si substrates using a soft solution processing. X-ray diffraction and also micro-Raman spectroscopy showed that the Ba0.8Sr0.2TiO3 thin films exhibited a tetragonal structure at room temperature. The presence of Raman active modes was clearly shown at the 299 and 725 cm−1 peaks. The tetragonal-to-cubic phase transition in the Ba0.8Sr0.2TiO3 thin films is broadened, and suppressed at about 35 °C, with a maximum dielectric constant of 948 (100 kHz). Electrical measurements for the prepared Ba0.8Sr0.2TiO3 thin films showed a remnant polarization (Pr) of 6.5 μC/cm2, a coercive field (Ec) of 41 kV/cm, and good insulating properties. The dispersion of the refractive index is interpreted in terms of a single electronic oscillator at 6.97 eV. The direct band gap energy (Eg) and the refractive index (n) are estimated to be 3.3 eV and n = 2.27–2.10, respectively. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 96
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5997-6001 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Near 4-μm-thick Pb(ZrxTi1−x)O3 (PZT) films with Zr/Ti ratios of 60/40, 52/48, and 45/55 were coated onto platinized silicon substrates by using 2-methoxyethanol based sol-gel spin-on techniques with a special thermal treatment process. The scanning electron microscopy observations show the columnar growth of grains. The analysis of x-ray diffraction data indicates that all PZT films exhibit (100) texture. The dielectric constants and dissipation factors of the films were measured at elevated temperatures and frequencies. It is found that Curie points of 60/40, 52/48, and 45/55 films are at 350, 375, and 422 °C, respectively. All these films exhibit high dielectric constants and remnant polarizations. A permittivity of 1658 and remnant polarization of 35 μC/cm2 had been achieved for the 60/40 films. No enhancement of the dielectric constant was observed in films with a Zr/Ti ratio close to morphotropic phase boundary. The high dielectric constant observed in films with the higher Zr content was explained by the concept of domain engineering. © 2002 American Institute of Physics.
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  • 97
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6015-6020 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Nanocrystalline nickel ferrite (NiFe2O4) particles were successfully synthesized in situ in an amorphous silica matrix by mechanical activation at room temperature. Phase development in the amorphous precursors, derived via a modified sol–gel synthesis route, with increasing mechanical activation time was studied in detail by employing transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. NiFe2O4 nanoparticles of 8.05 nm in mean particle size with a standard deviation of 1.24 nm, which were well dispersed in the silica matrix, were realized by 30 h of mechanical activation. The phase formation of nanocrystalline NiFe2O4 particles involves the nucleation of Fe3O4 in amorphous silica at the initial stage of mechanical activation, followed by the growth of nickel ferrite by incorporation of Ni2+ caions into Fe3O4. Their magnetic anisotropy, surface spin disorder, and cation distribution are investigated by considering both the strain imposed by silica matrix and the buffer effect during mechanical activation. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 98
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6027-6033 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A high density plasma from a methane–hydrogen mixture is generated in an inductively coupled plasma reactor, and multiwalled carbon nanotubes (MWNTs) are grown on silicon substrates with multilayered Al/Fe catalysts. The nanotubes are vertically aligned, and the alignment is better than the orientation commonly seen in thermally grown samples. A detailed parametric study varying inductive power, pressure, temperature, gas composition, catalyst thickness, and power to the substrate is undertaken. Transmission electron microscopy and Raman spectroscopy are used to characterize the nanotubes. Emission spectroscopy and a global model are used to characterize the plasma. The power in the lower electrode holding the substrate influences the morphology and results in a transition from MWNTs to nanofibers as the power is increased. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 99
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4543-4548 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The dc conduction behavior of thin films of SrBi2Ta2O9 (SBT) has been investigated on the basis of space-charge limited current theory. The theory was generalized to account for the traps, which were inevitably present in this case. The relative percentage of trapped injected charge and the free injected charge was seen to follow a dynamical equilibrium instead of the true thermal equilibrium as the temperature of the sample was raised during the measurement. The onset voltage of the trap filled region (VTFL) showed a decreasing trend with the increase of temperature. This reduction of VTFL was ascribed to the appearance of some excess charge in the conduction band. It was seen that the thermodynamically stable distribution of charges among the energy levels could not be taken to explain such a situation. A dynamic model was proposed to explain this kind of a nonequilibrium distribution of trapped and free charges. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 100
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 778-785 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Optical microscopy, synchrotron white beam x-ray topography (SWBXT), and high resolution x-ray diffraction (HRXRD) were used to study the distribution of basal plane dislocations in bulk 4H silicon carbide crystals grown by the physical vapor transport method. An etch pit array was observed on the silicon face of KOH-etched off-cut wafers. The arrays were aligned parallel to each other and perpendicular to the off-cut direction. The etch pits were oval-shaped, which is characteristic of basal plane dislocations. Corresponding array images have been observed by SWBXT. Based on the characteristic distribution, the etch pit arrays are interpreted as the slip traces of high temperature deformation during the growth process. Thermoelastic stress is proposed as the plausible cause of the deformation. In addition, basal plane dislocation pileups were found in the proximity of polygonized threading edge dislocation arrays. SWBXT and HRXRD were used to study the misorientation related to such dislocation structure. The pileups are interpreted as the origin of the basal-plane-tilt domains in SiC crystals. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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