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  • 1
    Electronic Resource
    Electronic Resource
    Intersystem crossing in hexahelicene (1979)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 101 (1979), S. 5863-5864 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00513a085
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  • 2
    Electronic Resource
    Electronic Resource
    Experimental and theoretical study of the structures and optical rotations of chiral bicyclic ortho esters (1988)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 110 (1988), S. 4144-4150 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00221a008
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  • 3
    Electronic Resource
    Electronic Resource
    Moisture Sorption Characteristics of Composite Foods Filled with Chocolate (1999)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 64 (1999), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: We compared the moisture sorption isotherms (MSI's) and their temperature dependence of composite foods with those of crust and filling. The MSI were determined on cracker, cookie, chocolate, and two types of composite foods such as CFI (cracker/chocolate/cracker) and CF2 (cookie/chocolate/cookie) at 20,30, and 40°C and 11–85% relative humidity, and fitted into the Guggenheim-Anderson-de Boer (GAB) equation. Chocolate had the lowest monolayer (mo) value, equilibrium moisture content (EMC), and sorption energy levels, followed by cookie and cracker. The CFI had higher EMC values and sorption energy than CF2. The GAB mo values and C1 values decreased with temperature, while C2 values increased with temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1999.tb15887.x
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  • 4
    Electronic Resource
    Electronic Resource
    Electron temperature control with grid bias in inductively coupled argon plasma (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 1017-1028 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of controlling electron temperature with grid-biased voltage is studied experimentally and the relevant physics is discussed in an inductively coupled Ar discharge. To obtain the electron density and electron temperature, the electron energy distribution functions (EEDFs) are measured with a Langmuir probe. As the grid voltage decreases negatively, the effective electron temperature is controlled from 2.0 to 0.6 eV and the electron density changes from 3×1010 to 2×1010 cm−3 in the diffusion region, while the effective electron temperature and electron density are not changed in the source region. The dependence of such various parameters, as electron density, electron temperature, plasma potential in each region, and so on, on the applied voltage, is presented. The functional relations between the measured physical quantities are well explained based on a global particle and energy balance relations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873342
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  • 5
    Electronic Resource
    Electronic Resource
    Scattered and recoiled ion fractions from LiTaO3(100) surfaces with different electrical properties (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 2720-2725 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Time-of-flight scattering and recoiling spectrometry (TOF-SARS) was used to investigate the scattered and recoiled ion fractions from 3 keV Ar+ ion beams on LiTaO3(100) single crystals. The TOF-SARS measurements were found to be sensitive to the electrical properties of the crystal. ac impedance measurements of the electrical conductivity showed that LiTaO3 is an insulator at room temperature and that its conductivity increases by ∼103 at temperatures in the range 100–200 °C. This increase in conductivity could be monitored in TOF-SARS by measuring the current through the crystal induced by the impinging Ar+ ions as a function of temperature. The activation energy for this transition was estimated from both the impedance and scattering measurements to be ∼1 eV. Azimuthal anisotropy of the scattered Ar+ ions from Ta atoms was observed at room temperature but not at elevated temperatures. Scattered Ar+ ion fraction measurements showed that scattered Ar+ ions are enhanced by charge buildup on the LiTaO3 surface, whereas recoiled ions are not affected. The effects of surface charging phenomena on TOF-SARS could be eliminated by either heating the LiTaO3 crystal to ∼200 °C or by application of a low energy electron beam to the crystal surface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.479548
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  • 6
    Electronic Resource
    Electronic Resource
    Inductively coupled plasma heating in a weakly magnetized plasma (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 2926-2935 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A one-dimensional analysis of electron heating process in a weakly magnetized, inductively coupled plasma (MICP) is presented. It is found that the main difference in the heating process of a MICP from that of a usual unmagnetized ICP is in that circularly polarized wave modes can exist in the plasma. The right handed circularly polarized wave (R-wave) can propagate into the plasma and its amplitude can be enhanced by cavity resonance effect at an appropriate chamber length and external magnetic field strength. The enhanced R-wave amplitude can raise the heating efficiency significantly. It is also found that a bounce cyclotron-resonance effect can exist, which, however, is not as significant as the cavity resonance effect. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873250
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of sputtering condition on dynamic characteristics and microstructures of magneto-optical 5.25 in. SiN/TbFeCo/SiN/Al disks for 532 nm recording media : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5696-5698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the effect of sputtering conditions, for each layer of the magneto-optical SiN 500 A(ring)/TbFeCo 200 A(ring)/SiN 200 A(ring)/Al 600 A(ring) disks, such as power and Ar gas flow rate on the noise levels (NL) and carrier-to-noise ratio (CNR) was performed for the 532 nm high density storage media in this work. The NL dropped to its minimum value of −71.3 dB as the sputtering power for the first SiN increased from 0.5 to 1.5 kW. With a further increase in sputtering power to 2.5 kW, it sharply increased to −64.5 dB. This was ascribed to the smooth and dense surface of the first layer at 1.5 kW, as was observed in the atomic forces microscopy images. The spherical, isotropic, fine grains with a diameter of about 0.2–0.7 μm at 1.5 kW were found, while the longitudinal, directional granular features with a length of 2.5 μm were seen at 2.5 kW. The highest CNR of 46.3 dB was observed at 0.6 kW with a constant sputtering Ar gas flow rate of 25 sccm for the magneto-optical layer. The sputtering conditions for other layers are as follows: 1.5 kW with sputter Ar/N2 gas flow rate of 30 sccm/11 sccm for the first and third SiN layer, and 0.6 kW with 25 sccm of Ar for the Al reflection layer. This is due to the smooth surface morphologies of the magneto-optical layer at this optimum sputtering pressure, as previously reported in similar research. To obtain a high readout signal, the phase compensation for the elliptic laser beam has been considered. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362220
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  • 8
    Electronic Resource
    Electronic Resource
    Chemisorption site of methanethiol on Pt{111} (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 9574-9582 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The chemisorption site of the simplest prototypical model alkanethiol compound, methanethiol [CH3SH], on a Pt{111} surface in the temperature range 298–1073 K has been investigated by means of time-of-flight scattering and recoiling spectrometry (TOF-SARS) and low-energy electron diffraction (LEED). TOF-SARS spectra of the scattered and recoiled ions plus fast neutrals were collected as a function of crystal azimuthal rotation angle δ and beam incident angle α using 4 keV Ar+ primary ions. At room temperature, the adsorption of methanethiol produces a partially disordered overlayer that gives rise to a diffuse (3×3)R30° LEED pattern and three-fold symmetry in the scattering profiles. Heating this surface layer results in the sequential dehydrogenation of the methanethiol and the formation of S–C species at elevated temperatures. By ∼373 K, hydrogen is absent from the TOF-SARS spectra and a sharp (3×3)R30° LEED pattern is observed. The model developed from the scattering data is consistent with the preservation of the adsorption site at elevated temperatures, but a change in the S–C bond angle with respect to the surface plane. For the fully dehydrogenated species, the S atoms reside ∼1.6±0.2 Å above the surface in face-centered-cubic (fcc) three-fold sites and the C atoms reside ∼1.5±0.4 Å in hexagonal-close-packed (hcp) three-fold sites. It is proposed that the remarkable stability of this SC adsorbate results from bonding of both the S and C atoms to the surrounding Pt atoms, i.e., a Pt-stabilized SC moiety. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.477619
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  • 9
    Electronic Resource
    Electronic Resource
    Precipitation of 3d transition-metal silicides in Czochralski silicon crystals (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6017-6019 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Precipitation of metal silicides was observed in as-grown Czochralski silicon crystals contaminated with 3d transition metals. The result indicates that a copper silicide precipitation occurs favorably in a crystal grown under slow cooling conditions. In the case of titanium disilicide formation, which involves silicon interstitial absorption, supersaturation of silicon interstitials produced by oxygen precipitation could lead to a coprecipitation of titanium and silicon interstitials. Based upon the present analysis, it is suggested that 3d transition-metal atoms incorporated into the crystal may remain in the silicon lattice as isolated interstitial impurities or precipitate via silicide formation, depending upon the crystal cooling conditions. The precipitation of metal silicides could take place at the crystal lattice defects which were created during crystal solidification.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358355
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  • 10
    Electronic Resource
    Electronic Resource
    The electron bounce resonance in a low-pressure solenoidal inductive discharge (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 2992-2997 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron energy distribution functions (EEDFs) are measured by a rf compensated Langmuir probe in a solenoidal inductive reactor at various frequencies and at 2 mTorr of argon. The frequency dependence of the electron energy distribution function is clearly observed. The energy diffusion coefficients against the applied frequencies are calculated from the nonlocal heating theory. It is found that the bounce resonance electrons determine the energy diffusion coefficient shape and the electron energy distribution function at the bounce resonance energy in the energy diffusion coefficient begins to flatten. The exact bounce resonance condition in solenoidal inductive discharge is presented. It is reported that the frequency dependence of the EEDFs is mainly due to the electron bounce resonance in a finite-size solenoidal inductive discharge. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1364673
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