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  • Articles  (71)
  • 61.70  (39)
  • 42.80  (33)
  • Springer  (71)
  • Annual Reviews
  • PANGAEA
  • 1980-1984  (71)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (71)
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  • Articles  (71)
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  • Springer  (71)
  • Annual Reviews
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (71)
  • Physics  (128)
  • 1
    Electronic Resource
    Electronic Resource
    Generation of tunable picosecond light pulses covering the frequency range between 2700 and 32,000 cm−1 (1980)
    Springer
    Applied physics 23 (1980), S. 113-119 
    Details
    ISSN: 1432-0630
    Keywords: 42.65 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The travelling-wave parametric process allows the generation of intense picosecond pulses tunable between 2700 and 17,000 cm−1. Angle- and temperature tuning was investigated using LiNbO3 crystals of different cuts. Various factors determining the bandwidth of the new pulses are evaluated and experimental spectra are presented. Frequency doubling readily leads to light pulses up to 32,000 cm−1. The jitter of two parametric systems operating in parallel is less than 1 ps for pump pulses of 7 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899704
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  • 2
    Electronic Resource
    Electronic Resource
    Quasi-optics of the group delay of guided magnetic waves (1980)
    Springer
    Applied physics 23 (1980), S. 141-147 
    Details
    ISSN: 1432-0630
    Keywords: 42.10 ; 85.70 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The wave-packet of a magnetic wave on reflection at an interface between a ferrimagnetic medium and free space is shown to undergo no lateral shift but only a time delay. The time delay introduced on reflection is included to obtain a quasi-optical description for the group delay of a magnetic wave guided by a planar slab of ferrimagnet in free space for the case of the magnetizations (a) normal to the surfaces of the slab, and, (b) parallel to the surfaces of the slab and to the direction of propagation. The group delay of the guided magnetic wave is caused partly by the group delay produced in the bulk of the ferrimagnet and partly by the group delay produced on reflections. The characteristics of these two contributions to the resultant group delay of the guided magnetic wave are examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899709
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  • 3
    Electronic Resource
    Electronic Resource
    New TEA-lasers based onD′→A′ transitions in halogen monofluoride compounds: ClF (284.4 nm), BrF (354.5 nm), IF (490.8 nm) (1980)
    Springer
    Applied physics 23 (1980), S. 283-287 
    Details
    ISSN: 1432-0630
    Keywords: 42.55 ; 42.80 ; 33
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract As an outcome of a systematic study of excitation kinetics and fluorescence spectra concerning theD′(3π2u )→A′(3π2g ) transitions in homonuclear diatomic halogens and corresponding transitions in interhalogen molecules [1], this paper describes, for the first time, TEA laser action in the three halogen monofluorides ClF, BrF, and IF. Output energies in the mJ range were demonstrated in a fast TEA discharge arrangement at the wavelengths of 284.4, 354.5, and 490.8 nm for ClF, BrF, and IF, respectively. The results suggest parameter scalability and wavelength tunability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00914912
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  • 4
    Electronic Resource
    Electronic Resource
    The influence of intrisic defects on the degradation and luminescence of GaAs and other III–V compounds (1980)
    Springer
    Applied physics 23 (1980), S. 303-309 
    Details
    ISSN: 1432-0630
    Keywords: 42.80 ; 61.70 ; 61.80 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A significant contribution to the degradation of GaAs-based lasers and light-emitting diodes arises from the formation of so-called dark line defects. It is shown that these defects are accumulations of non-radiative recombination centres around dislocations. The centres are identified as As vacancies, which are emitted by climbing dislocations, concomitantly with the absorption of Ga interstitials. From scanning deep-level transient spectroscopy observations it is concluded that the so-called DX centres are Ga interstitials. The driving force for dislocation climb and thus for dark-line-defect formation is a supersaturation of Ga interstitials originating from the growth of the GaAs crystals under Ga-rich conditions as a consequence of the high volatility of As. Phenomena in other III–V compound semiconductors related to the formation of dark line defects in GaAs are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00914916
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  • 5
    Electronic Resource
    Electronic Resource
    Fundamental absorption edge of evaporated amorphous WO3 films (1981)
    Springer
    Applied physics 24 (1981), S. 55-59 
    Details
    ISSN: 1432-0630
    Keywords: 78.20 ; 42.80 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The fundamental absorption edge of evaporated WO3 films is investigated. The optical gap of the virgin film is estimated to be 3.41 eV at room temperature and it decreases with increase of annealing temperature up to 200°C. Annealing at 300°C leads to change in the spectral shape, which is caused by crystallization. For the films annealed at 200°C, temperature coefficient of the optical gap is estimated to be −2×10−4 eV/K and the slope of Urbach's tail is found to be independent of measuring temperature up to 200°C. With electrolytic coloration, shift of the optical gap toward higher energy is observed. Magnitude of this shift is estimated to be 0.05 eV at the color center concentration of 7.5×1021 cm−3 when H+ electrolyte is used. If Li+ electrolyte is used, the magnitude of this shift is about three times larger than in the case of H+ electrolyte. This fact is interpreted by a small change in the host matrix structure owing to the injection of proton or Li+ during coloration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900398
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  • 6
    Electronic Resource
    Electronic Resource
    Vacancy noise measurements in metals: Calculation of the power spectrum (1983)
    Springer
    Applied physics 30 (1983), S. 117-122 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 72.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Fluctuations in the number of vacancies in metals in thermal equilibrium lead to resistivity fluctuations. Analysis of these fluctuations permits measurement of both formation and migration enthalpy of the vacancies. The power spectrum of the fluctuations is calculated using a series of statistically independent pulses. It can be derived from the diffusion equation for any geometry of the vacancy sinks. Vacancy diffusion to the surface of a thin plate or of a sphere are treated as examples. The measurability of vacancy noise is assessed. It should also be possible to measure vacancy noise during irradiation. It is predicted that correlated vacancy creation, which may occur during irradiation, will cause an increase in the power spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614913
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  • 7
    Electronic Resource
    Electronic Resource
    Vacancy migration energy in quenched Al-Mg0.01 alloy by positron annihilation (1981)
    Springer
    Applied physics 26 (1981), S. 107-113 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The isothermal recovery rates of vacancy-impurity complexes in an aluminium-1% magnesium alloy are measured in situ at eight temperatures from variations of colinear annihilation γ-rays versus time. These data analysed in terms of a time dependant β+-trapping model yield two apparent migration energies of 0.8 eV±0.1 eV and 0.9 eV±0.05 eV. The nature of the complexes is discussed and their binding energy is estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616657
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  • 8
    Electronic Resource
    Electronic Resource
    Proton conductivity in the layer compound H3OUO2AsO4·3H2O (HU As) (1983)
    Springer
    Applied physics 32 (1983), S. 45-53 
    Details
    ISSN: 1432-0630
    Keywords: 66.33 ; 61.70 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The proton conductivity in H3OUO2AsO4·3H2O (HUAs) has been measured below the transition temperature at 299 K. A consistent picture of the elementary process taking place is developed from separate electrochemical, spectroscopic and calorimetric measurements. The conductivity is proposed to occur by the “vehicle mechanism” of proton transport, i.e. the cooperative motion of H3O+ and H2O. This mechanism is compared with the Grotthuss and the simple ion hopping mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617828
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  • 9
    Electronic Resource
    Electronic Resource
    Free-running ruby laser annealing of boron implanted silicon (1981)
    Springer
    Applied physics 26 (1981), S. 243-246 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 42.80 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An analytical treatment of the thermal phenomena during free-running ruby laser annealing of boron implanted silicon is presented. The heat equation was solved for a simplified shape of the pulse train consisting of a uniform succession of triangular spikes, identical in energy. During one spike the optical and thermal parameters of the sample were taken constant, but for each new spike, new values of these parameters were calculated taking into account their temperature dependence. Such a model predicts the melting of the top surface before the laser pulse has ended, for energy densities higher than 9×104 J/m2. RHEED confirms the presence of recristallization at about the same value of the laser-pulse energy densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617845
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  • 10
    Electronic Resource
    Electronic Resource
    Time delays in lead-salt semiconductor diode lasers (1984)
    Springer
    Applied physics 33 (1984), S. 181-182 
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    ISSN: 1432-0630
    Keywords: 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Time delays of typically 15–17μ have been measured directly for PbS1−xSex, Pb1−xSnxSe and Pb1−xSnxTe diode lasers at injection levels just above threshold in each case. The corresponding minority carrier lifetimes, as determined using the one-carrier injection model, were typically 2–4μ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618753
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  • 11
    Electronic Resource
    Electronic Resource
    Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurements (1984)
    Springer
    Applied physics 33 (1984), S. 133-140 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.3085.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In- and out-diffusion of gold in silicon were investigated with the aid of a neutronactivation analysis in combination with mechanical sectioning or by the spreadingresistance technique. In-diffusion profiles in the range 1371–1073 K show that Au diffuses in Si mainly via the so-called kick-out mechanism. From the Au diffusion and solubility measurements the interstitialcy contributionD I SD to the Si self-diffusion coefficient was determined, which shows that the self-diffusion occurs to a considerable extent via selfinterstitials. Out-diffusion profiles at 1173 K were measured on wafers homogeneously supersaturated with Au. The observed decrease of the electrical activity of Au in the bulk indicates that during the out-diffusion anneal the majority of Au atoms originally dissolved substitutionally changes its configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617619
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  • 12
    Electronic Resource
    Electronic Resource
    Preparation of Nb3Sn structures on low pinning niobium foils for use in guided flux motion experiments (1982)
    Springer
    Applied physics 27 (1982), S. 167-169 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 68 ; 74
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simple method is presented to prepare very low pinning niobium foils on which geometrically well defined Nb3Sn-pinning structures of arbitrary shape are deposited. This facilitates the fabrication of samples for guided vortex motion experiments some of which are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616668
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  • 13
    Electronic Resource
    Electronic Resource
    TEM image contrast from antiphase domains in GaAs: Ge(001) grown by MBE (1984)
    Springer
    Applied physics 34 (1984), S. 231-236 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Antiphase domains occur in thin GaAs epitaxial films grown on Ge(001) by molecular beam epitaxy. The domains have been imaged by transmission electron microscopy using 200-type reflections in dark field. The carefully chosen imaging conditions with convergent illumination ensure that doubly diffracted beams from a pair of first order Laue zone discs contribute to the singly diffracted 200-type beams. The three Bragg reflections may add in or out of phase to give domains in either light or dark contrast depending on their polarity.
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    URL: http://dx.doi.org/10.1007/BF00616577
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  • 14
    Electronic Resource
    Electronic Resource
    Au gettering by Ne and Ar implantation in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 119-124 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66 ; 85.30 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The gettering efficiency for Au induced by Ne+ and Ar+ implantation has been studied. The depth distribution of gettered Au as a function of annealing temperature and dose of implanted Ne+ and Ar+ ions are presented. The experiment shows that the maximum efficiency of gettering occurs when the implantation doses are comparable with amorphization dose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620641
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  • 15
    Electronic Resource
    Electronic Resource
    The dielectric constant of PbTe at 4.2 K and $$\tilde v$$ =84.15 cm-1, 96.97cm−1, 103.60cm−1 (1982)
    Springer
    Applied physics 28 (1982), S. 229-233 
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    ISSN: 1432-0630
    Keywords: 77 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dielectric constant of a PbTe epitaxial layer has been measured by surface wave spectroscopy using an optically pumped far-infrared laser and the technique of attenuated total reflection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618699
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  • 16
    Electronic Resource
    Electronic Resource
    Supersaturated Si-As alloy formation by ion implantation and pulsed electron beam annealing (1982)
    Springer
    Applied physics 28 (1982), S. 99-102 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Supersaturated surface alloys produced by very high dose (0.8−2.6×1017cm−2) implantation of As-ions into silicon and subsequent pulsed electron-beam annealing have been investigated by means of the channeling technique. The maximum solubility limit of 7×1021 As/cm3 has been determined. It exceeds the equilibrium solubility limit by more than a factor of 4. Angular scan measurements indicated that for doses above 1×1017cm−2 As atoms are displaced by about 0.12 Å from the regular lattice sites.
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    URL: http://dx.doi.org/10.1007/BF00617137
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  • 17
    Electronic Resource
    Electronic Resource
    Vacancy-impurity interaction in dilute iron alloys by positron annihilation (1982)
    Springer
    Applied physics 28 (1982), S. 179-187 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron annihilation measurements of the coincidence count rate at the peak of the angular correlation curve (CCR) have been performed as a function of temperature for the alloy systemFeTi in a concentration range up to about 1.3 at. %. The concentration dependence of the effective vacancy formation enthalpy (H 1V F )eff suggests the existence of an attractive interaction between vacancies and the impurity atoms. It will be shown that the description of the vacancy concentration in an alloy according to the Lomer model is not valid in this case, because it neglects binding of vacancies to solute atom pairs and to higher agglomerates. The application of a model proposed by Dorn and Mitchell gives evidence that beyond the binding of a vacancy to a single solute atom in the concentration range investigated also aggregates of a vacancy bound to two and three foreign atoms must be taken into account. The analysis of the measurements according to the method of Hehenkamp and Sander gives values for the respective vacancy-solute-atom(s) binding enthalpies H 1 B =0.25eV, H 2 B =0.53eV and H 3 B =0.91eV. The discussion of the temperature and solute-atoms concentration dependence of the vacancy concentration suggests a much more complicated behaviour than for pure metals even at low solute-atom concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617984
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  • 18
    Electronic Resource
    Electronic Resource
    Holography with guided optical waves (1980)
    Springer
    Applied physics 21 (1980), S. 55-64 
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    ISSN: 1432-0630
    Keywords: 42.30 ; 42.80 ; 42.82
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Waveguide holograms are recorded in a storage material layer covering a planar dielectric waveguide with a guided mode as reference wave. They are also read-out with a guided mode. In the storage material, assumed to have a lower refractive index than the waveguiding film, the fields of the reference and of the read-out wave are evanescent waves. We describe the preparation of the epoxy resin (Araldit) waveguides on glass substrates, their coating with a dichromated gelatin (DCG) layer as storage material, the processing of the DCG, and the recording and reconstruction techniques. Waveguide holograms of good quality with a size of several square centimeters have been realized for the first time. The holograms were recorded and read-out with wavelength λ=488 nm. They have a length of about 25 mm and a width of 17 mm. To obtain holograms that wide a special prism coupler had to be used which allowed to couple in a laser beam of elliptical cross section, and thus to excite a guided reference or read-out mode with a width of 17 mm.
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    URL: http://dx.doi.org/10.1007/BF00886483
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  • 19
    Electronic Resource
    Electronic Resource
    Asymmetry of quadrupole doublet of Mössbauer spectra in LiNbO3∶Fe (1980)
    Springer
    Applied physics 21 (1980), S. 195-198 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 76.80 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Polycrystalline samples of LiNbO3 doped by the enriched57Fe isotope have been studied at room and liquid nitrogen temperatures by nuclear γ-resonance (NGR). Iron impurity concentrations were 0.07, 0.30, 1.02, 2.06 at.%, the Li/Nb ratio being 0.935, 0.990, 1.000. An asymmetry of the quadrupole doublet of NGR experimental spectra has been found. Acceptable hypotheses are discussed to explain the nature of the asymmetry: the Goldanskii-Karyagin effect, the effect of sample texture, and the electron and nuclear spin-lattice relaxation effect. On the basis of computed NGR spectra and thorough analysis of the models we can conclude that there is tendency to form coupled pairs of Fe2+ cations in neighbour lithium and niobium sites. The probability of the formation of such pairs exceeds considerably the statistical value.
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    URL: http://dx.doi.org/10.1007/BF00900684
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  • 20
    Electronic Resource
    Electronic Resource
    Epitaxial growth of ferroelectric PLZT thin film and their optical properties (1980)
    Springer
    Applied physics 21 (1980), S. 339-343 
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    ISSN: 1432-0630
    Keywords: 42.80 ; 78.20 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A series of experiments for growing epitaxial PLZT thin films has been made with rf sputtering. X-ray and electron diffraction analyses confirm that the fabricated films grow epitaxially on SrTiO3 and MgO crystals. A good transparency in the region above 0.4 μm to infrared with good ferroelectric properties is obtained. Propagation loss of He−Ne laser light is less than 6 dB/cm, and the PLZT thin film is a promising candidate for the optical modulator and other functional elements for integrated optics.
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    URL: http://dx.doi.org/10.1007/BF00895925
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  • 21
    Electronic Resource
    Electronic Resource
    Signal statistics of laser light scattering (1980)
    Springer
    Applied physics 21 (1980), S. 369-376 
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    ISSN: 1432-0630
    Keywords: 05.40 ; 02.50 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract After a brief survey of number fluctuations, a topic of current interest in light scattering research, the theory is developed for a particular case of this type. A laser beam of Gaussian cross section illuminates a volume in which there is a fluctuating number of identical particles. For incoherent detection the scattered intensities are additive. The interest centers on the statistics of the total scattered intensity. Starting from the moment generating function, the distribution function of scattered intensity is computed using two different methods. In an experiment designed to test the computed distributions, agreement between theory and measurement is found if the mean particle number within the scattering volume exceeds 3. The experimental procedure is described and some difficulties are explained which so far did not permit application of the theory for particle numbers much below 3.
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    URL: http://dx.doi.org/10.1007/BF00895929
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  • 22
    Electronic Resource
    Electronic Resource
    Holography with guided optical waves (1980)
    Springer
    Applied physics 22 (1980), S. 161-170 
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    ISSN: 1432-0630
    Keywords: 42.30 ; 42.80 ; 42.82
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper deals with “waveguide holograms” recorded in a layer of storage material covering a planar dielectric waveguide. Reference and read-out waves are guided modes of the waveguide. Their field in the storage medium is evanescent. A theory of the diffraction efficiencies of these waveguide holograms is presented fors-polarized wavefields. To calculate the hologram structure the attenuation of the reference wave caused by absorption in the light-sensitive storage material is taken into account. Analytical expressions for the local and the overall diffraction efficiencies and for the intensity profiles of the diffracted fields are derived. The dependence of these quantities on experimental parameters (the waveguide thickness, the mode numbers of the reference and read-out waves, and the angle of incidence of the plane object wave) is presented graphically, i.e., by computer plots. Grating couplers for integrated optics can be made by waveguide holography. We consider this application to be interesting because incoupling efficiencies for Gaussian beams of up to 96% can be achieved theoretically.
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    URL: http://dx.doi.org/10.1007/BF00886000
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  • 23
    Electronic Resource
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    Application of pressure-tuned diode lasers to high-resolution spectroscopy (1980)
    Springer
    Applied physics 22 (1980), S. 241-243 
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    ISSN: 1432-0630
    Keywords: 07.65 ; 42.55 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The application of the high-pressure chamber with a pressure transmitting medium (liquid at room temperature) to diode-laser tuning was found to be a useful method for high-resolution spectroscopy. Ammonia absorbtion spectra in the 10 μm region were recorded with a resolution approaching the Doppler limit.
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    URL: http://dx.doi.org/10.1007/BF00886014
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  • 24
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    Time averaging by means of a computer controlled dye-laser spectrometer (1980)
    Springer
    Applied physics 22 (1980), S. 361-364 
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    ISSN: 1432-0630
    Keywords: 07.65 ; 42.80 ; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The noise characteristic of available laser sources limits the sensitivity of saturated absorption spectroscopy. Time averaging is one method to improve the signal-to-noise ratio. A computer controlled dye-laser spectrometer is described which has the capability to scan several times any selected frequency range with an absolute accuracy of ±200 kHz. The sensitivity of this system is demonstrated by measuring the isotope shift of the low abundant38Ar and by detecting a weak83Kr-hyperfine component.
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    Positron trapping in electron-irradiated silicon crystals (1980)
    Springer
    Applied physics 22 (1980), S. 415-419 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.60 ; 78.70
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    Notes: Abstract The positron lifetime in electron-irradiated undoped and doped silicon crystals is studied as a function of temperature between 90 and 300 K. We show that the temperature dependence of the two lifetime components does not arise from the escape, but from the trapping rate at defects. The temperature dependences of the capture cross sections are deduced. It is concluded that in undoped crystals the positrons interact with negatively charged and neutral defects, probably divacancies and vacancy-oxygen complexes, respectively. In strongly P-doped crystals positron trapping occurs preferably in negatively charged centers.
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    Mechanism and kinetics of the diffusion of gold in silicon (1980)
    Springer
    Applied physics 23 (1980), S. 361-368 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66 ; 85.30
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    Notes: Abstract The diffusion of Au in Si is known to take place via the interchange of Au atoms between substitutional (Au s ) and interstitial (Au i ) sites. So far it has generally been believed that this interchange involves lattice vacancies (V) and that it occurs via the Frank-Turnbull mechanism V+Au i ⇆Au s . It is stated in the literature that this model explains the observation that the Au s concentrationC s m in the centre of Au-diffused Si wafers increases with timet according to $$C_s^m \propto \sqrt t $$ . We show that this statement is incorrect, i.e., the Frank-Turnbull model cannot account for the $$C_s^m \propto \sqrt t $$ law. Such a dependence is expected in the case of Si wafers with a sufficiently low density of internal sinks for self-interstitials if the Au i −Au s interchange is controlled by the so-called kick-out mechanism Au i ⇆Au s +1. Since this mechanism involves self-interstitials (I) the present result is in accordance with the fact that under high-temperature equilibrium conditions the dominating intrinsic point defects in Si are self-interstitials and not vacancies as in Ge or metals.
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    URL: http://dx.doi.org/10.1007/BF00903217
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    Full-automatic broad-band wavelength control of a pulsed dye laser (1981)
    Springer
    Applied physics 24 (1981), S. 331-340 
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    ISSN: 1432-0630
    Keywords: 06.60 ; 42.60 ; 42.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A full-automatic wavelength controled pulsed dye laser has been developed. With the control system, dye laser oscillations of nanosecond pulses are tuned to any wavelength in the visible or scanned in any sweep mode keeping the nearly transform-limited bandwidth of 0.45 GHz. A mechanical tuning of the wavelength is employed, such that the motion of three wavelength selectors is synchronized to give a smooth and precise wavelength control. The basic principle underlying the tuning scheme, various requirements to be met in system construction, and the practical performance of automatic wavelength control are described in this paper.
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    Transient behaviour of pulsed dye lasers (1980)
    Springer
    Applied physics 21 (1980), S. 353-359 
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    ISSN: 1432-0630
    Keywords: 42.10 ; 42.60 ; 42.80
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    Notes: Abstract Some aspects of the transient behaviour of pulsed dye lasers are investigated both theoretically and experimentally. Relaxation oscillations induced in the output from a dye cell by an external reflector have been observed and explained, using a rate equation approximation to the physical situation in the dye cell. These oscillations are shown to play an important part in the generation of short laser pulses from long cavity dye lasers. Finally, it is proposed that 10 ps pulses can be obtained from conventional dye lasers pumped by 100 ps pulses from a high-pressure nitrogen laser.
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    URL: http://dx.doi.org/10.1007/BF00895927
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    Towards an ideal photon correlator with a SAW-device (1980)
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    Applied physics 22 (1980), S. 113-114 
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    ISSN: 1432-0630
    Keywords: 42.80 ; 85.60 ; 07
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    Notes: Abstract The advantages and disadvantages of the clipped correlator for photoelectric correlation measurements are analysed. A scheme is suggested by which the problem of inversion (an inherent disadvantage of clipping) is obviated. With the availability of surface acustic wave (SAW) delay lines, we would like to point out that one can make an almost ideal photon correlator.
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    Imaging properties and applications of scanning optical microscopes (1980)
    Springer
    Applied physics 22 (1980), S. 119-128 
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    ISSN: 1432-0630
    Keywords: 42.30 ; 42.80 ; 72.40
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    Notes: Abstract This review paper is concerned with the imaging properties and major uses of scanning optical microscopes. It is shown that the confocal scanning microscope exhibits a form of super-resolution and that the instrument in general has great application in nonlinear microscopy and the inspection of electronic devices.
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    URL: http://dx.doi.org/10.1007/BF00885994
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    High-field susceptibility of EuS single crystals (1980)
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    Applied physics 22 (1980), S. 155-160 
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    ISSN: 1432-0630
    Keywords: 76 ; 61.70
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    Notes: Abstract The high-field susceptibility of a cylindrical EuS single crystal was measured in the temperature range between 2.5 K and 16.5 K with applied magnetic fields up to 45 kOe. The measured field dependence of the susceptibility was explained by taking into consideration thermally excited spin waves and the influence of microstructural defects on the spin arrangement. The exchange integral with nearest neighbour and next-nearest neighbour atoms,J=J 1+J2, was determined to be (0.14±0.02)k B(K). This result is in good agreement with the value derived from neutron scattering experiments. The analysis of the influence of different types of crystal defects on the law of approach to ferromagnetic saturation shows that the nonmagnetic inclusions play a dominant role in our case. The deduced density of nonmagnetic inclusions according to the micromagnetic theory agrees well with the result of scanning elecron microscope (SEM) observations.
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    Analysis of resistance fluctuations independent of thermal voltage noise (1980)
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    Applied physics 22 (1980), S. 185-187 
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    Keywords: 06 ; 07 ; 61.70
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    Notes: Abstract New methods for thermal-equilibrium investigations of atomic vacancies or of dislocation movements in metals require measurements of minute resistance fluctuations. The accuracy of such measurements is limited by thermal noise from the resistor. The present paper proposes a method for analysing resistance fluctuations independent of voltage noise.
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    Pulsed electron-beam annealing of high-dose arsenic implanted silicon (1980)
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    Applied physics 22 (1980), S. 385-388 
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    Keywords: 61.70 ; 81.40
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    Notes: Abstract The effects of pulsed electron-beam annealing of high-dose As implanted {111} Si single crystals has been studied. The depth distributions and lattice location of the As atoms were obtained using MeV4He+ backscattering and channeling technique. The implantation energy was 100 keV with a total dose of 3.5·1016/cm2. Above the threshold energy of 0.9 J/cm2 the single-crystal transition was observed with about 95% of the As atoms on substitutional lattice sites. This leads to an As concentration of 2·1021/cm3 which was demonstrated to be a metastable one.
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    Lattice defects of V3Si single crystals studied by positron annihilation (1981)
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    Applied physics 25 (1981), S. 65-70 
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    Keywords: 78.70 ; 61.70 ; 61.80
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    Notes: Abstract The sensitivity of positrons to point defects created by the irradiation of V3Si with neutrons is demonstrated. We found no indication of thermal vacancies by thermal equilibrium measurement up to 1273 K which indicates that the monovacancy formation enthalpy for V3Si isH 1V F ≧(1.84±0.14) eV. Investigations within the range of homogeneity for excess vanadium suppot the idea that substitutional defects are the dominating defect type, whereas for excess silicon a direct confirmation of existing structural vacancies as the dominating defect type is given.
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    High precision wavelength meter with Fabry-Perot optics (1981)
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    Applied physics 25 (1981), S. 311-316 
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    ISSN: 1432-0630
    Keywords: 07.40 ; 07.60 ; 42.60 ; 42.80
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    Notes: Abstract A high precision wavelength meter in the visible is described, which is based on a Fabry-Perot interferometer with several etalons of different resolution. The interference fringe pattern projected on a photo-diode array detector is computationally processed to give a stepwise refinement of the wavelength value to any adjusted accuracy. The present model intends to provide digital and real-time values of high precision wavelength for dye-laser spectroscopy, and to serve as a monitor or as a pilot for wavelength control of a dye-laser source of nanosecond pulses. The model is, therefore, designed with particular emphasis on its short-pulse capability and on-line mode of operation as well as on its high sensitivity and resolution. Some arrangements of essential necessity are involved therein, such as to avoid an errorneous wavelength readout for a noisy incidence of pulsed field. The ultimate accuracy of wavelength measurement is prescribed by the resolving power of the thickest etalon employed. As applied to the pulsed source, the model determines the wavelength to the accuracy of ±one part in 107 for even a single shot nanosecond incidence of a fraction of μJ energy. The design and performance are described in connection to pulsed dye-laser incidence.
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    Non-equilibrium dopants incorporation in silicon melted by laser pulses (1983)
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    Applied physics 30 (1983), S. 195-211 
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    Keywords: 61.70 ; 81.10 ; 66.30
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    Notes: Abstract The rapid solidification of silicon layers melted by high-power laser pulses lead to an enhanced incorporation of implanted dopants in substitutional lattice sites. A review of experimental results, heat and mass transport calculations, is presented together with the latest models for solute redistribution during rapid solidification. Interfacial instabilities, leading to cell structure and other factors limiting the maximum concentration of incorporated dopants are also presented.
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    Arsenic antisite defects as the main electron traps in plastically deformed GaAs (1983)
    Springer
    Applied physics 30 (1983), S. 233-235 
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    Keywords: 61.70 ; 71.55
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    Notes: Abstract It is found from DLTS measurements that plastic deformation of GaAs single crystal creates a new kind of electron traps with an activation energy of 0.37 eV, and gives rise to an increase in the concentration of main electron traps with an energy of 0.80 eV. By comparing the concentrations of the main electron traps before and after deformation with analogous concentrations of AsGa paramagnetic centers, found by EPR experiments, it is concluded that the centers observed in both cases are of the same origin. A nonstandard feature of the main traps is discovered: linear dependence of the DLTS-peak amplitude on the logarithm of the filling-pulse duration time. This feature can be explained in terms of the barrier-limited capture rate, assuming the traps are arranged in rows.
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    Proton conductivity in the layer compound H3OUO2AsO4·3H2O (HU As) (1983)
    Springer
    Applied physics 32 (1983), S. 155-158 
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    Keywords: 66.30 ; 61.70 ; 82.65
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    Notes: Abstract The proton conductivity in tetragonal H3OUO2AsO4·(3-δ)H2O has been measured above the transition temperature at 299 K. The conductivity, calorimetric and spectroscopic data depend on the water content and the transition is suggested to be a peritectic reaction setting free a small amount of solution, which stays strongly adsorbed between the layers of the structure and gives rise to the high conductivity.
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    On the trapping of positrons in cadmium in the temperature range from 80 to 330 K (1982)
    Springer
    Applied physics 27 (1982), S. 257-261 
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    Keywords: 78.70 ; 61.70 ; 81
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    Notes: Abstract The positron lifetime was measured in cadmium in the temperature range between 80 K and 500 K. For the first time a plateau was observed by this method in polycrystalline samples. The obtained data are well explained by depletion of shallow traps forT≤180 K and by self-trapping in the prevacancy region.
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    Borrmann-like anomalous effects in volume holography (1980)
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    Applied physics 22 (1980), S. 335-353 
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    Keywords: 42.30 ; 42.10 ; 42.80
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    Notes: Abstract In this review, a surgey of the evidence for the appearance in volume holography of certain anomalous effects (akin to the Borrmann effect in x-ray crystallography) is conducted, with reference to both experimental observations and theoretical models. The main part of the paper is devoted to the application of a recently-developed two-dimensional coupled-wave theory (an extension of Kogelnik's one-dimensional theory) to the modelling of such anomalous phenomena. Extensive calculations based upon this theory, for the case of Gaussian wave incidence on a uniform mixed grating for various boundary conditions, are presented in a unified two-dimensional description of Borrmann-like effects in volume holography. In particular, certain qualitative predictions of the dynamical theory of x-ray diffraction are expressed quantitatively in the two-dimensional theory.
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    Brewster window and windowless resonant spectrophones for intracavity operation (1980)
    Springer
    Applied physics 23 (1980), S. 319-326 
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    Keywords: 06 ; 07.65 ; 42.80
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    Notes: Abstract We report a new design for an acoustically resonant spectrophone well suited for intracavity operation with widely tunable lasers. Operation with Brewster angle windows or in a windowless mode is possible, and high quality factors (560 and 509, respectively) are achieved. Windowless operation permits continuous monitoring of ambient air. We discuss factors limiting the sensitivity, ∼10−7 cm−1, and present a double chopping scheme capable of significantly reducing the acoustical background encountered in windowless operation. The sensitivity of the spectrophone's performance to misalignment is also examined.
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    Role of deposition conditions, impurities and structural defects in the epitaxial growth of thin films (1981)
    Springer
    Applied physics 24 (1981), S. 85-88 
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    Keywords: 68.50 ; 61.70
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    Notes: Abstract A summary of the theoretical and experimental investigations carried out to understand the problem of epitaxy is given. The effect of deposition conditions and the nature of the substrate-deposit combination on the orientation of the final film is discussed. The importance of the nucleation and growth stages, reorientation and recrystallization effects and the influence of the impurities and defects in the substrate surface on the quality of the films deposited are presented.
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    Low-power multi-pulse laser annealing of α-Ge (1983)
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    Applied physics 30 (1983), S. 161-167 
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    Keywords: 61.70 ; 61.80 ; 68.55
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    Notes: Abstract In this paper we want to show by means of Reflection High Energy Electron Diffraction (RHEED) techniques that the recrystallization processes taking place on amorphous germanium films irradiated with low-power superimposed ruby laser pulses occur gradually. Furthermore, in implanted α-Ge films the amorphous-crystalline front moves from the surface of the specimen towards the substrate, while the opposite occurs for glow-discharge deposited films. Moreover, electron microscope observations carried out with a double-stage carbon replica technique at different depths in the specimen show that defect migration is one of the competitive mechanisms in low-power laser annealing.
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    Formation of holographic diffraction gratings in photoresist (1981)
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    Applied physics 26 (1981), S. 143-149 
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    Keywords: 42.80 ; 42.82
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    Notes: Abstract The exposure-development process for the fabrication of holographic diffraction gratings for integrated optics in the positive photoresist Shipley AZ-1350 is theoretically and experimentally investigated. An analysis of the light intensity distribution is carried out, taking into account the reflectivity at the photoresist-substrate interface and the attenuation in the photoresist for two holographic exposure arrangements. The influence of the exposure energy, the development time for a fixed concentration of the developer and the initial photoresist thickness are described. Various grating profiles are calculated for photoresist films, coated on matched and reflective substrates. Scanning electron micrographs demonstrate very good agreement between the actual and calculated gratings profiles.
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    Effects of a magnetic field on the optical properties of dielectric mirrors (1983)
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    Applied physics 32 (1983), S. 63-67 
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    Keywords: 42.80 ; 78.20 ; 78.65
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    Notes: Abstract We have measured the changes in the polarization state of a monochromatic (λ=514.5 nm) light beam on reflection at normal incidence by a multilayer dielectric mirror placed in a time-modulated magnetic field. The dominant effect is a Faraday rotationΦ≃3.7×10−10 rad/G. The sensitivity (around 40Hz) obtained is $$ \simeq 6 \times 10^{ - 9} {\text{ rad/}}\sqrt {{\text{Hz}}} $$ which is dominated by the shot-noise limit (100 mW of light power).
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    Refractive index profiles of LiNbO3: Ti waveguides (1983)
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    Applied physics 32 (1983), S. 125-127 
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    Keywords: 42.80 ; 66.30 ; 85.60
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    Notes: Abstract Eight LiNbO3: Ti waveguides have been fabricated under differing conditions. The effective refractive indices of guided modes have been measured and successfully fitted to Gaussian index profiles. The change of refractive index and titanium concentration are related by a power law, the exponents being different for the extraordinary and the ordinary beam.
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    Photoconducting tellurium for submillimeterwave detectors (1982)
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    Applied physics 27 (1982), S. 35-38 
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    Keywords: 42.80 ; 72.40 ; 78.20
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    Notes: Abstract Undoped tellurium single crystals show at low temperatures (2.2 K) strong photoeffect under submillimeter irradiation. Therefore, tellurium was used as a FIR-detector. For a comparison with other detectors signal-to-noise ratio, response time, and noise equivalent power were determined. Tests were carried out with HCN-laser radiation (λ = 337 μm,≈ν = 30 cm- t). The sensitivity of the Tc-photoconductor is comparable to that of a TGS-bolometer but lower than that of a Ge-bolometer. The Te-detector is much faster than the bolometers.
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    Annealing behavior ot trap-centers in silicon containing A-swirl defects (1982)
    Springer
    Applied physics 29 (1982), S. 105-111 
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    Keywords: 71.55F ; 61.70 ; 73.40Q
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    Notes: Abstract The annealing behavior of trap-centers was studied in float-zone silicon wafers containing A-swirl defects. Samples from areas of high and low A-swirl density were annealed in nitrogen ambient between 100° and 900 °C, and analysed using the Deep Level Transient Spectroscopy. The results indicate, that two levels atE c }-0.07 eV,σ n=4.6×10−16 cm2, andE c−0.49eV,σ n=6.6×10−16cm2 are caused by one defect, for which the silicon di-selfinterstitial is a likely interpretation. A level atE c }-0.11 eV was assigned to interstitial carbon. Both defects annealed out at about 170 °C. After 600 °C annealing an additional level atE c−0.2 eV was detected, which was attributed to an interstitial silicon carbon complex. Heat treatment at 800 °C generated a new level atE c−0.49 eV,σ n=2.9×10−16cm2 only in the area of high A-swirl defect density. This level was also observed after oxidation and subsequent annealing of silicon.
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    Disclosure of defects in YAG crystals by the thermoluminescence method (1984)
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    Applied physics 35 (1984), S. 249-253 
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    Keywords: 61.70 ; 61.80 ; 71.35 ; 78.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The topograms revealing the anisotropic distribution of defects in the volume of monocrystalline YAG samples have been obtained by the thermoluminescence (TL) technique. It has also been shown that the anisotropic distribution of the lattice defects affects strongly the shape of the TL curves. The greatest changes in the TL intensity were observed in the areas of the samples distributed symmetrically every 120°. It was noted that the selective distribution of the TL intensity is caused mainly by the presence of the (211) facets as well as growth striations formed during the growth process. The groups of lines observed in the TL spectrum have been ascribed to the Tb3+ ions, excited owing to the radiationless energy transfer from the bound exciton states (BES).
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    URL: http://dx.doi.org/10.1007/BF00617175
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    Experimental method for the measurement of hyperfine transition saturation intensities in a gaseous medium (1980)
    Springer
    Applied physics 21 (1980), S. 135-140 
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    ISSN: 1432-0630
    Keywords: 35 ; 42.55 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A saturated absorption technique, using an actively stabilized cw dye laser has been developed to measure the saturation intensities of hyperfine transitions in a gaseous medium. Hyperfine lines belonging to theB-X system of molecular iodine have been investigated. The experimental method proposed, provides a means for measurement of the absolute value of the saturation parameter of the transition with an accuracy better than 10%. The behavior of the saturation intensity of some transitions with iodine pressure has been investigated in the range 30 m Torr→90mTorr.
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    A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy (1980)
    Springer
    Applied physics 21 (1980), S. 257-261 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undopedn-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E c −0.65eV andE c −0.74eV) and one grown-in hole trap level (E v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E c −∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.
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    URL: http://dx.doi.org/10.1007/BF00886176
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    Influence of the solvent matrix on the overlapping of the absorption and emission bands of solute fluorescent dyes (1980)
    Springer
    Applied physics 23 (1980), S. 369-372 
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    ISSN: 1432-0630
    Keywords: 33 ; 61.40 ; 42.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract It has been observed that the separation between the absorption and the emission bands of a fluorescent dye is smaller in a rigid polymer matrix than in the liquid monomer. Low temperature measurements have been carried out in order to understand this phenomena. It has been found, that the molecular mobility of the matrix, in which the dye is dissolved, plays an important role. By doping the rigid matrix with molecules of high mobility, the separation between the absorption and emission bands can be increased. A nearly complete separation can be achieved by this doping method if the difference of the dipole moments in the ground and excited states of the dye molecules is very large. This allows, for example, to increase the brightness of the fluorescence-activated liquid-crystal display (FLAD) and the efficiency of solar collectors based on fluorescent dyes.
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    URL: http://dx.doi.org/10.1007/BF00903218
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    Laser amplification in an optical fiber by evanescent field coupling (1981)
    Springer
    Applied physics 24 (1981), S. 201-203 
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    ISSN: 1432-0630
    Keywords: 42.10 ; 42.80 ; 42.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A laser signal propagating in an optical fiber is amplified by the evanescent field interacting with the excited Rhodamine 6 G solution surrounding the fiber. A small signal gain of 430 at 600 nm has been measured in a long fiber with a 2 cm long fiber optic amplifier.
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    Optical properties determination at 10.6 μm of thin semiconducting layers (1983)
    Springer
    Applied physics 30 (1983), S. 23-26 
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    ISSN: 1432-0630
    Keywords: 07.60 ; 42.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An optical characterization of thin semiconducting multilayers in the infrared range, using a combination ofm-lines and reflection spectroscopy techniques is exposed. Such a method, non-destructive, allows to determine the thickness and the refractive index of each component of a multilayer multimodal planar waveguide.
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  • 55
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    The X-ray diffraction intensity of cyclically loaded Al (1983)
    Springer
    Applied physics 30 (1983), S. 123-126 
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    ISSN: 1432-0630
    Keywords: 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The displacement field around a dislocation loop had been calculated to give the diminishing factor of X-ray diffraction intensity from a fatigued Al sample. Experimentally had been measured this factor on the samples fatigued at room temperature and at low temperature. From these the size and density of dislocation loops can be deduced. Results show that in the sample fatigued at room temperature there is no significant change in dislocation structure while at low temperature in fatigued sample occurs a large amount of dislocation loops whose density is 1014−1017cm−3 while their radii are between 100 and 1000 Å.
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    URL: http://dx.doi.org/10.1007/BF00614914
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    Measuring the Magnetooptic Kerr effect by diffraction (1983)
    Springer
    Applied physics 31 (1983), S. 59-63 
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    ISSN: 1432-0630
    Keywords: 78.20 L ; 42.80 ; 75.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A method is presented to measure the Magnetooptic Kerr Effect (MOKE) by diffraction. This is accomplished by giving the magnetized surface a magnetization distribution which functions like a linear diffraction grating. It is shown that the first and higher orders of the light diffracted by such a grating are produced by MOKE whereas the zero order approximately represents the reflectivity of the surface (given by the Fresnel formulae assuming zero magnetization). The procedure used here to form a grating is restricted to thin soft magnetic films, and has been demonstrated on evaporated Fe-Ni films. It uses the magnetic field of a pulse-driven meandered stripe-conductor placed in close contact with the film in the presence of a homogeneous external magnetic field. Experimentally determined Kerr intensities were compared with those measured by ellipsometric methods. Good agreement was found in the case of films with uniaxial anisotropy. For films with no anisotropy, the relative dependence of Kerr intensity vs wavelength, polarisation and angle of incidence could be derived.
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    On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon (1983)
    Springer
    Applied physics 31 (1983), S. 97-108 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An extensive analysis of the substitutional dopant diffusion phenomena in silicon during oxidation is presented. The analysis covers qualitative as well as quantitative aspects of the oxidation-enhanced and -retarded diffusion (OED and ORD) phenomena, and examines three different possible assumptions that can be made on the nature of the silicon thermal equilibrium point defect species: silicon self-interstitials (I) only, vacancies (V) only, coexistence of I and V. The only consistent way to interpret all properly documented OED/ORD data is to assume that I and V coexist under oxidation as well as under thermal equilibrium conditions at high temperatures.
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    URL: http://dx.doi.org/10.1007/BF00616312
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    Generation of dislocations introduced by bending stress in a Si wafer (1983)
    Springer
    Applied physics 31 (1983), S. 109-114 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Distribution and morphology for dislocations introduced in (001) Si wafers subjected to bending stress at 800°, 900°, and 1100°C were investigated. For wafers bent around a [110] axis at 900° and 1100°C, straight dislocations appeared along the [110] direction only near the neutral plane, and were absent at the surfaces where bending stress is greatest. However, for wafers bent at 800 °C, such straight dislocations were not formed. Dependence of the dislocation distribution and morphology on heat treatment temperature is explained on the basis of interaction between bending stress and SiO2 precipitates introduced in bulk. Also, it was found that the straight [110] dislocations remained still near the neutral plane, even when additional reverse bending stress was applied around an axis parallel to the dislocations, but were transfered toward the tensile surface by bending around an axis normal to the dislocation direction.
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    The lanthanideβ″ aluminas (1983)
    Springer
    Applied physics 32 (1983), S. 159-161 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70 ; 42.60
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The entire sodium ion content of sodiumβ″ alumina (Na1.67Mg0.67Al10.33O17) can be replaced with a variety of lanthanide ions by simple diffusion reactions at moderate temperatures (500–700°C). Lanthanideβ″ alumina crystals are hard, clear, chemically stable, and have well-defined crystal structures. The fluorescence spectrum of Nd3+ inβ″ alumina is similar to that in YAG. The lifetime of the4 F 3/2 state of Nd3+ in completely-exchangedβ″ alumina (350μs at 1021 Nd3+ cm−3) is about 45% longer than in YAG (240μs at 1020Nd3+ cm−3). The lanthanideβ″ aluminas may be of considerable interest as new phosphor and laser host materials.
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    On the temperature dependence of positron lifetimes in tin and the transition from theβ- to theα-phase (1983)
    Springer
    Applied physics 32 (1983), S. 183-185 
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    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70 ; 81
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract For the first time the positron lifetimes in polycrystalline tin have been measured as a function of temperature in the whole range from 80 K to the melting point. The temperature dependence of the mean lifetime could be divided into four regions which can be attributed to the depletion of shallow traps, normal thermal expansion, prevacancy effects, and trapping by vacancies, respectively. In one of the samples the phase transition fromβ- toα-Sn clearly could be detected at 230 K by a sharp increase in the mean lifetime.
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    Trapping of positrons at vacancies in magnesium (1982)
    Springer
    Applied physics 27 (1982), S. 49-56 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Trapping of positrons at vacancy-type defects in magnesium was studied by positron lifetime and Doppler-broadening measurements. Vacancy defects were produced by quenching, electron irradiation and deformation at low temperatures as well as by thermal agitation at elevated temperatures. In the first three cases we observed trapping at multiple vacancies, which anneal out between 77...400 K. Thermal equilibrium measurements show S-shape behaviour originating from positron trapping at magnesium monovacancies. However, changes in the positron parameters were very small, which is due to the weakness of the positron-vacancy interaction. A detrapping analysis yielded a positron-vacancy binding energy of the order of 0.3...0.4 eV.
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    Time-resolved defect production and annealing during electron-beam processing of silicon (1984)
    Springer
    Applied physics 33 (1984), S. 251-254 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In (100)p-Si radiation damage was produced by implanting B+ ions with an energy of 80keV, 90keV and 1.6MeV. The specimens were annealed by scanned electronbeam irradiation (20keV, 1–2mAcm−2). The formation, evolution and annihilation of defects during the irradiation process were investigated by employing DLTS and RBS measuring techniques. The results show a minimum of defect concentration and an efficiency of the electrical activation of B higher than 80% at an annealing time of 4.5 s. For irradiation times longer than 5 s it becomes evident, that the crystal surface acts as source of defects and contributes to an increase in defect concentration.
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    Optical method for measuring the coupling constant of surface acoustic waves (1982)
    Springer
    Applied physics 27 (1982), S. 95-97 
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    ISSN: 1432-0630
    Keywords: 42.80 ; 62
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The coupling constant of common or thin-layered-piezoelectric interdigital transducers for surface acoustic waves up to the highest frequencies can be determined in an optical way with reproducibility better than 3%. Being a nondestructive and noncontact method one can apply it in the technological process for fabricating uniform piezoelectric layered transducers.
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    Isothermal annealing of room temperature deformed iron studied with the positron annihilation technique (1982)
    Springer
    Applied physics 27 (1982), S. 129-132 
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    Keywords: 61.70 ; 78.70
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    Notes: Abstract Positron-annihilation lineshape parameter measurements were performed during isothermal annealing of room temperature deformed iron. An isothermal annealing effect is seen in impure iron while in pure iron no effect is measured.
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    Positron trapping at grain boundaries (1982)
    Springer
    Applied physics 27 (1982), S. 149-152 
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    Keywords: 78.70 ; 61.70
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    Notes: Abstract A simple model is developed for the trapping of positrons at grain boundaries. It is shown that there is a linear relationship between any linear annihilation parameter and the inverse grain size. An effective grain boundary width is defined, which depends on the positron diffusion length and on the strength of the grain boundary for positrons. The effect of detrapping on this effective width is also considered. The model is tested by using the experimental results available in the literature.
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    Space-time resolved reflectivity measurements of picosecond laser-pulse induced phase transitions in (111) silicon surface layers (1982)
    Springer
    Applied physics 27 (1982), S. 153-160 
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    ISSN: 1432-0630
    Keywords: 78.20 ; 81 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The changes in reflectivity of a silicon surface, irradiated by a green picosecond pulse, are probed during and following that pulse with a spatial resolution of 10 μm. The data indicate the development of a liquid phase, and a resolidification either into a single crystal or an amorphous phase. The latter has a characteristic ring-type pattern, and occurs only at locations where the incident picosecond laser fluence lies between 0.2 and 0.26 J/cm2. The reflectivity data appear to be in good quantitative agreement with a “simple heating” model, in which the electrons and phonons maintain a local thermodynamic equilibrium on a picosecond time scale.
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    On the theory of the diffusion of gold into dislocated silicon wafers (1982)
    Springer
    Applied physics 27 (1982), S. 171-176 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The paper presents a theoretical study of the diffusion of gold into dislocated silicon wafers in terms of the kick-out mechanism Au i ⇄Au s +I, where Au i , Au s , andI mean Au interstitials, substitutional Au atoms, and Si self-interstitials, respectively. In agreement with experiments it is found that the Au s concentration in the centre of a wafer,C s m , increases with the durationt of the diffusion anneal according toC s m =C s eq (k 0 t)1/2 except forC s m values in the vicinity of the solubility limitC s eq of Au s . Approximate analytical expressions fork 0 as a function of the densityN I of the dislocations acting asI sinks are given for the entire regime 0≦NI〈+t8.
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    X-ray line profile analysis of dislocations and stacking faults in deformed copper (1984)
    Springer
    Applied physics 35 (1984), S. 109-114 
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    ISSN: 1432-0630
    Keywords: 61.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Dislocation configurations and stacking faults in commercial copper rods after 20% and 70% cold-rolling, fatigue and unidirectional tension here studied by x-ray line profile analysis. The analysis of dislocation is based on the Stokes method, the Warren-Averbach analysis and the Wilkens theory for Gaussian or mixed type of strain broadening profiles. For the Cauchy type the range of stress field of dislocations is small, and a model of regular distribution of dislocation dipoles is proposed instead of the Wilkens model of a restrictedly random distribution of dislocations. Due to the obvious texture in all four kinds of deformed samples, the possible glide systems are obtained by using a biaxial stress system. The analysis of stacking faults is based on theories of Patterson, Warren, and Wagner by measuring profile peak shifts, asymmetry and broadening. The broadening due to perfect dislocations and stacking faults can easily be separated. The configuration parameters and density of dislocations, the probabilities of intrinsic, extrinsic and twin stacking faults were deduced in all cases.
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    Formation of antisite defects by gliding dislocations in sphalerite-structure crystals (1982)
    Springer
    Applied physics 29 (1982), S. 199-200 
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    Keywords: 61.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Conditions are discussed under which an interstitial atom absorbed in the core of a gliding 60° dislocation belonging to the glide set can be transformed into an antisite defect. The mechanism considered may be responsible for an increase in the concentration of AsGa defects observed in GaAs single crystals after their plastic deformation.
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    Oxygen diffusion and thermal donor formation in silicon (1982)
    Springer
    Applied physics 28 (1982), S. 79-92 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The information available on the diffusion of oxygen and on the formation of thermal donors in silicon is critically reviewed. In this context the effects of intrinsic point defects on the diffusion-controlled growth of oxygen precipitates is investigated in some detail. Seemingly contradictory experimental results on the diffusivity of oxygen in silicon at temperatures around 400° C are explained in terms offast-diffusing gas-like molecular oxygen in silicon. The concept of molecular oxygen is also invoked in a newly suggested model of thermal donor formation in silicon. The diffusivity of molecular oxygen in silicon is estimated to be around 10−9cm2s−1 at 450° C, almost nine orders of magnitude higher than the diffusivity of atomic oxygen in interstitial position.
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    Radiation sensitivity of thick core all-glass fibers in reactor radiation fields (1982)
    Springer
    Applied physics 28 (1982), S. 45-51 
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    ISSN: 1432-0630
    Keywords: 42.10 ; 42.80 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Radiation induced losses and the recovery behavior of several optical fibers have been determined by in situ steady state and by pulse measurements in a nuclear reactor. Agreement with the literature was found for Suprasil and Fibropsil core fibers in ionizing radiation, but our results on Suprasil-W core fibers show an appreciably higher radiation hardness of this material than reported elsewhere. Additionally, increased long term losses were observed, when the mixed radiation flux contained a noticeable content of neutrons.
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