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  • Articles  (3,989)
  • Elsevier  (2,208)
  • Springer  (1,781)
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  • 1980-1984  (3,989)
  • Technology  (3,989)
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  • Articles  (3,989)
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  • 1
    Electronic Resource
    Electronic Resource
    Introductory statement (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 1-2 
    Details
    ISSN: 1572-8986
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00566371
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  • 2
    Electronic Resource
    Electronic Resource
    Energy-transfer processes in decaying helium-cadmium plasmas (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 53-64 
    Details
    ISSN: 1572-8986
    Keywords: Energy transfer ; helium ; cadmium ; gaseous plasma
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Light absorption and emission spectroscopy were used in studies of the time dependences of the CdII spectral emission and Hem(23S) number density in the stationary afterglow of helium-cadmium mixtures. Transitions from 12 CdII energy levels were monitored in the afterglow. The five CdII states below 20 eV are produced, either directly or via cascading, by the Penning ionization of Cd by Hem(23S). The remaining CdII states studied are produced by the chargeexchange excitation of Cd by He+. No evidence was found for the production of CdII energy levels by charge transfer between Cd and He 2 + or by Penning ionization of Cd by He 2 m (23σ u + ). A value of (5.4±0.3)×10−10 cm3 sec−1 was measured for the reaction rate coefficient for the Penning ionization of Cd by Hem(23S), and a value of (2.1±0.2)×10−10 cm3 sec−1 was measured for the reaction rate coefficient for charge exchange between He+ and Cd at a gas temperature of 200°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00566375
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  • 3
    Electronic Resource
    Electronic Resource
    Mechanisms of radical production in CF3Cl, CF3Br, and related plasma etching gases: The role of added oxidants (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 37-52 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; formation of etchants ; polymers
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A model is presented that accounts for the formation of various etchants, unsaturated species, and polymers in halocarbon/oxidant plasma etching mixtures. It is discussed in terms of emission and mass spectral measurements of stable and unstable products in CF3Cl, CF3Br, C2F6, and related systems. In this reaction scheme, fluorocarbon precursors derived from the building block radical CF2 are saturated during reactions with atoms and reactive molecules. The most reactive species are preferentially removed by the saturation reactions. An ordering of this reactivity can be used to predict the dominant atomic etchants as a function of halocarbon and additive gas compositions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00566374
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  • 4
    Electronic Resource
    Electronic Resource
    Novel techniques for plasma diagnostics: Electron paramagnetic resonance and laser-induced fluorescence spectroscopy (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 3-18 
    Details
    ISSN: 1572-8986
    Keywords: “Cold” plasmas ; plasma diagnostics ; concentration of species
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Diagnostic techniques for low-pressure, “cold” plasmas have mostly been limited to emission and mass spectrometry. Herein, the techniques of gas-phase electron paramagnetic resonance and laser-induced fluorescence spectroscopy are briefly reviewed. Particular attention is paid to their attributes which make them good candidates for plasma diagnostic tools. It is found that gas-phase electron paramagnetic resonance can be used to determine and monitor the absolute concentration of a number of important plasma species, e.g., free radicals and atoms. Laser-induced fluorescence can also monitor, with even more sensitivity, but perhaps not so well absolutely, the concentrations of many plasma species, e.g., free radicals, metastable excited states, and molecular ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00566372
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  • 5
    Electronic Resource
    Electronic Resource
    Drift tube investigations on the reactions of O 2 + with CH4 and of CO 2 + with NO in various buffer gases (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 65-71 
    Details
    ISSN: 1572-8986
    Keywords: Drift tube ; rate coefficients ; internal excitation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The influence of internal excitation on the reactions of O 2 + + CH4 and of CO 2 + + NO has been investigated using a slow flow drift tube. The rate coefficients for these reactions obtained as a function of relative kinetic energy in various buffer gases like He, Ne, Ar, and Kr showed higher values under conditions where the internal excitation of the reactant ions was enhanced. For both reactions the lowest reactivity at all kinetic energies was observed to occur in He, indicating that He is the least effective buffer for collisionally inducing internal excitation of molecular ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00566376
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  • 6
    Electronic Resource
    Electronic Resource
    Kinetic and spectroscopic analysis of NH3 decomposition under R.F. Plasma at moderate pressures (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 19-35 
    Details
    ISSN: 1572-8986
    Keywords: Decomposition of NH3 ; kinetics ; optical spectroscopy ; gas chromatography
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The plasma decomposition of NH3 has been studied as a function of the residence time, power input, and pressure. The process follows apparently zero-order kinetics, which can be interpreted on the basis of a kinetic mechanism involving as initial step the rupture of an N-H bond from vibro-rotationally excited modecules. Simultaneous spectroscopic observations of the emission light due to electronically excited NH2, NH, H, and N2 have been used to confirm the suggested mechanism and to show that NH2 and NH are successive intermediate species and that the final step of the decomposition process is the bimolecular recombination NH+NH→N2+H2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00566373
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  • 7
    Electronic Resource
    Electronic Resource
    Heating and quenching of metastable superconducting compounds with a plasma jet (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 73-82 
    Details
    ISSN: 1572-8986
    Keywords: Plasma jet ; heating and quenching ; superconducting compounds
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Superconducting compounds, such as cubic α-MoC1−x, cubic β-WC1−x, hexagonal MoB2, and cubic δ-TaN, which are metastable at room temperature, have been formed by heating and quenching of their respective equilibrium phases, such as hexagonal η-MoC1−x, hexagonal WC, rhombohedral Mo2B5, and hexagonal ε-TaN in a plasma jet. From calculations based on a simple model, the quenching rate of particles has been estimated to be 105 deg s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00566377
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  • 8
    Electronic Resource
    Electronic Resource
    New design of a radio-frequency plasma torch (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 113-129 
    Details
    ISSN: 1572-8986
    Keywords: Radio-frequency plasma ; temperature and flow fields ; injection method
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A numerical model has been developed for predicting the two-dimensional flow and temperature fields in a radio-frequency (rf) plasma torch. The method employed here is based on Boulos' model with the exception of the boundary conditions for the electric and magnetic field equations. Calculations have been made for the confirmation of a new sample injection method, which is capable of completely evaporating refractory materials at high feeding rates without interfering with the stability of the plasma. In the newly designed torch, the reagent is radially injected into the hottest part of the plasma through quartz capillary tubes set symmetrically between an inductor coil. Experimental investigations have also been performed for verifying the proper function of the design. These results provide evidence that our radial injection method developed here is more effective in practical processing than the conventional axial injection methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00566379
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  • 9
    Electronic Resource
    Electronic Resource
    Another jounrnal from Plenum Journal of Pharmacokinetics and Biopharmaceutics vol. 9, no. 1 February 1981 (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. i 
    Details
    ISSN: 1572-8986
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00566382
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  • 10
    Electronic Resource
    Electronic Resource
    Announcements (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 133-133 
    Details
    ISSN: 1572-8986
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00566381
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  • 11
    Electronic Resource
    Electronic Resource
    Summary of meetings (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 131-132 
    Details
    ISSN: 1572-8986
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00566380
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  • 12
    Electronic Resource
    Electronic Resource
    UF6 plasma chemistry reconstitution experiments using high-temperature fluorine (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 83-111 
    Details
    ISSN: 1572-8986
    Keywords: RF-plasma ; UF6 plasma core reactor ; regeneration
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Prior results indicate techniques have been developed for fluid mechanical confinement of high-temperature uranium hexafluoride (UF6) plasma for long test times while simultaneously minimizing uranium compound deposition on the walls. Follow-on investigations were conducted to demonstrate a UF6/argon injection, separation, and reconstitution system for use with rf-heated uranium plasma confinement experiments applicable to UF6 plasma core reactors. A static fluorine batch-type regeneration test reactor and a flowing preheated fluorine/UF6 regeneration system were developed for converting all the nonvolatile uranium compound exhaust products back to pure UF6 using a single reactant. Pure fluorine preheat temperatures up to 1000 K resulted in on-line regeneration efficiencies up to about 90%; static batch-type experiments resulted in 100% regeneration efficiencies but required significantly longer residence times. A custom-built, ruggedized time-of-flight (T.O.F.) mass spectrometer, sampling, and data acquisition system permitted on-line quantitative measurements of the UF6 concentrations down to 30 ppm at various sections of the exhaust system; this system proved operational after long-time exposure to corrosive UF6 and other uranium halides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00566378
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  • 13
    Electronic Resource
    Electronic Resource
    Thermal plasma synthesis of transition metal nitrides and alloys (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 135-147 
    Details
    ISSN: 1572-8986
    Keywords: Thermal plasmas ; synthesis ; transition metal nitrides ; alloys
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Applications of arc plasma processing to high-temperature chemistry of Group V nitrides and Si and Ge alloys are studied. The transition metal nitrides δ-VN, δ-NbN, and δ-TaN are directly synthesized in a dc argon-nitrogen plasma from powders of the metals. A large excess of N2 is required to form stoichiometric δ-VN, while the Nb and Ta can only be synthesized with a substoichiometric N content. In a dc argon plasma the alloys V3Si, VSi2, NbSi2, NbGe2, Cr3Si, and Mo3Si are obtained from powder mixtures of the corresponding elements. The compounds are identified by x-ray diffraction patterns and particle shape and size are studied by electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00564576
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  • 14
    Electronic Resource
    Electronic Resource
    Reduction and dephosphorization of molten iron oxide with hydrogen-argon plasma (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 149-160 
    Details
    ISSN: 1572-8986
    Keywords: Plasma ; reduction ; iron oxide ; hydrogen dephosphorization ; reaction rate
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A laboratory-scale test was made in which iron oxide contained in a water-cooled crucible was melted and reduced by using a 10–50% H2-Ar transferred arc plasma. The degree of reduction was found to be proportional to the amount of hydrogen fed. The efficiency of hydrogen utilization for the reduction was 50–70%, which is much higher than equilibrium values below 3000 K. This high efficiency was attributable partially to the reactivity of the hydrogen atom in a plasma and partially to the continuous contact of the hydrogen plasma with the molten iron oxide layer floating over the liquid iron formed. During the plasma reduction, evaporative loss of phosphorus was observed. The degree of phosphorus removal depended on the weight ratio, CaO/(SiO2+Al2O3). H2-Ar plasma was shown to be far superior for the phosphorus removal, compared with Ar and Ar-N2 plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00564577
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  • 15
    Electronic Resource
    Electronic Resource
    A 100-kW three-phase AC plasma furnace for spheroidization of aluminum silicate particles (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 161-178 
    Details
    ISSN: 1572-8986
    Keywords: Plasma furnace ; air plasma ; three-phase arcs ; sheathed electrodes ; spheroidization ; fired clay particles ; low-binder-consumption foundry molds
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A 100-kW three-phase ac plasma furnace with sheathed copper electrodes (sheathing gas: air) is presented. It is used for spheroidizing “chamotte” (refractory-fired clay) particles having a smooth, pore-free surface. A simple, one-dimensional numerical model for the heat transfer to the particles explains the maximum processing rate and the detrimental influence of an inhomogeneous particle size distribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00564578
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  • 16
    Electronic Resource
    Electronic Resource
    Reactions of hydrogen peroxide vapor dissociated in a microwave plasma (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 191-200 
    Details
    ISSN: 1572-8986
    Keywords: Plasma chemistry ; microwave discharge ; hydrogen peroxide
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Analysis of the plasma emission from a low-pressure microwave cavity discharge through flowing hydrogen peroxide vapor showed that both H and OH were produced in proportions which varied with the applied power. When the dissociated vapor was condensed at 195 K only water was obtained; at 77 K, H2O2 and H2O4 were also obtained. Their formation could not be increased by increasing the H atom or OH radical concentration in the plasma. When the reaction time of the dissociated vapor between the plasma exit and the cold surface was increased, the rate of H2O2 formation increased mostly at the expense of water formation. It appears that, as in the case of the reaction of H with O2, the rate of H2O2 formation is dependent on the concentration of O2 produced in the spatial afterglow by the gas-phase reactions of the hydroxyl radicals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00564580
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  • 17
    Electronic Resource
    Electronic Resource
    Desulfurization of thiophenes by radio-frequency plasma processing (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 179-189 
    Details
    ISSN: 1572-8986
    Keywords: Plasma desulfurization ; thiophene ; alkylthiophenes
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Thiophene and several alkylthiophenes are desulfurized by glow discharges to 50–80%, the main products being ethine, ethene, and low-boiling hydrocarbons. Addition of oxygen increases the desulfurization, augments the production of C2-hydrocarbons, and reduces polymer formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00564579
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  • 18
    Electronic Resource
    Electronic Resource
    Another journal from Plenum Journal of Pharmacokinetics and Biopharmaceutics vol. 9, no. 3 June 1981 (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. i 
    Details
    ISSN: 1572-8986
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00564582
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  • 19
    Electronic Resource
    Electronic Resource
    DC plasma etching of silicon by sulfur hexafluoride. Mass spectrometric study of the discharge products (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 201-215 
    Details
    ISSN: 1572-8986
    Keywords: SF6 discharge ; silicon ; mass spectroscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Polycrystalline silicon wafers were etched in dc discharges of SF6. SFx species were extracted from the discharges and measured with a mass spectrometer. A systematic procedure was used to measure the SF x + signals such that they are indicators of events in the discharge close to the sample undergoing etching. The picture that emerges is remarkably simple and shows the relative stability of several SFx species including SF6, SF4, SF2, and SF which are shown to be extracted from the discharge both in the presence and absence of the silicon sample. When silicon is being etched on the cathode of the discharge cell, the only significant additional products are SiF4 and S2F2. A comparison of blank and sample data for opposite substrate polarities shows that there is only a small cation-assisted etching effect and suggests that ions do not play an important role in the etching of silicon by SF6 discharges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00564581
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  • 20
    Electronic Resource
    Electronic Resource
    Review of oxide formation in a plasma (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 217-232 
    Details
    ISSN: 1572-8986
    Keywords: Anodization ; oxidation ; plasma
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The physical processes occurring at the surface and in the bulk of an oxide during plasma oxidation or anodization are discussed. It is shown that (i) the majority of oxygen ions used in the growth are formed by electron-assisted surface processes, (ii) the nature of the oxide surface and especially the presence of electrode contamination can have a determinant role in the oxygen exchange between the plasma and the oxide, and (iii) ion space charge can control the anodization kinetics. Two applications (formation of the insulating barrier of Josephson junctions, and GaAs MOSFET devices) are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00568831
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  • 21
    Electronic Resource
    Electronic Resource
    Mechanism and kinetics of polymerization of propylene in a microwave plasma (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 233-245 
    Details
    ISSN: 1572-8986
    Keywords: Plasma ; kinetics ; polymerization ; propylene
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Flowing microwave plasma of propylene and propylene with argon was studied by mass spectrometry. Plasma composition was investigated as a function of external parameters such as pressure, argon/propylene ratio, and microwave-induced power. It was found that the propylene broke down to C2H2 and CH4, or reacted further with propylene. Two main products, leading to the determination of three main chain reactions for the polymerization of propylene by ion-molecule interactions, were observed, namely, C2H2 and CH4. These were the propylene, acetylene, and ethylene chain reactions. It was also found that the propylene disappeared in a pseudo-first-order reaction. Consequently an overall rate constant for the polymerization was determined (50 sec−1 at 1 torr pressure for propylene plasma). This constant is found to be linearly dependent upon the propylene percent concentration, and nonlinearly dependent upon plasma pressure.
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    URL: http://dx.doi.org/10.1007/BF00568832
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  • 22
    Electronic Resource
    Electronic Resource
    Decomposition of CCl4 in an RF discharge—A gas chromatography and time-resolved emission spectroscopy study (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 247-260 
    Details
    ISSN: 1572-8986
    Keywords: Plasma chemistry ; plasma etching ; spectroscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The decomposition of CCl4 in an rf discharge starts by a very fast electron attachment mechanism $$\begin{gathered} CCl_4 \xrightarrow{{ + e}}(CCl_4^ - ) \to CCl_3 + Cl^ - \hfill \\ \hfill \\ k_0 \hfill \\ \end{gathered}$$ A first-order rate constant, (k0 · ne) ≈ 10+2−10+3 s−1, is estimated by two-channel time-resolved emission spectroscopy. The ability of the method to detect the change of concentrations in plasma processes is discussed. A steady-state product distribution containing CCl4, C2Cl4, C2Cl6, Cl2, and glow polymer as main products is formed via recombination processes. The influence of plasma power density on this product distribution is given by gas-chromatographic results.
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    URL: http://dx.doi.org/10.1007/BF00568833
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  • 23
    Electronic Resource
    Electronic Resource
    Vacuum lithography—A completely dry lithography using plasma processing (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 261-269 
    Details
    ISSN: 1572-8986
    Keywords: Vacuum lithography ; electron-beam resist ; plasma-polymerized methyl methacrylate (PPMMA) ; plasma etching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The purpose of this paper is to describe a thoroughly dry lithography using plasma polymerization and plasma etching. The new lithography is named vacuum lithography because all processes are performed at reduced pressures. Resist films were formed in bell-jar-type and argon-flow-type reactors. The controllability of plasma polymerization is discussed with respect to the type of reactor and gas mixture. A pattern was delineated in the resist using an electron beam, and it was developed by plasma etching with a mixture of argon and oxygen. It was found that the quality of the plasma-polymerized resist depends strongly on the polymer structure and on the plasma etching conditions. In this experiment, the recorded values of sensitivity and γ value of plasma-polymerized methyl methacrylate were 700 µC/cm2 and 1, respectively.
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    URL: http://dx.doi.org/10.1007/BF00568834
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  • 24
    Electronic Resource
    Electronic Resource
    Laser-induced breakdown spectroscopy: Time-integrated applications (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 271-279 
    Details
    ISSN: 1572-8986
    Keywords: Spectrochemistry ; laser-induced breakdown ; atomic detection ; spectroscopy ; coal gasification ; sodium detection ; potassium detection ; beryllium detection ; organophosphates
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Spectral analysis of the plasma produced by laser-induced breakdown was demonstrated to be an effective real-time technique for the detection of atomic constituents in gases and gas-entrained particulates. The time-integrated technique, LIBS (laser-induced breakdown spectroscopy), was applied to the detection of sodium and potassium in a coal gasifier product stream, of airborne beryllium, and of phosphorus, sulfur, and chlorine in various organic molecules. In a companion paper (following) the time-resolved technique will be discussed.
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    URL: http://dx.doi.org/10.1007/BF00568835
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  • 25
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    Editorial (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 315-315 
    Details
    ISSN: 1572-8986
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00565991
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    Laser-induced breakdown spectroscopy: Time-resolved spectrochemical applications (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 281-293 
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    ISSN: 1572-8986
    Keywords: Spectrochemistry ; laser-induced breakdown ; time-resolved spectroscopy ; chlorine detection ; phosphorus detection
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract We have added time resolution to laser-induced breakdown spectroscopy in two forms, by gating an optical multichannel analyzer (OMA) and by time-resolving the output of a photomultiplier with a boxcar amplifier. Spectra were obtained for temporal segments of 25 to 100 ns, from 25 ns to 50 µs after initiation of the breakdown. OMA spectra of oxygen illustrate the power of this technique for survey purposes. The photomultiplier-boxcar arrangement was used to detect phosphorus atoms from diisopropylmethyl phosphonate in air, and also to detect chlorine in air, both in real time. In the former experiments we detected 690 ppm (w/w) of phosphorus and project a limit of detection with our current apparatus of 15 ppm (w/w). For chlorine, we observed signal from 120 ppm (w/w) and project a limit of detection of 60 ppm (w/w).
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    Another journal from Plenum Journal of Pharmacokinetics and Biopharmaceutics vol. 9, no. 3 June 1981 (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. i 
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    ISSN: 1572-8986
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
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    URL: http://dx.doi.org/10.1007/BF00568838
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    Two-temperature modeling of an arc plasma reactor (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 295-314 
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    ISSN: 1572-8986
    Keywords: Arc plasma reactor ; two-temperature modeling ; nonequilibrium properties
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract In this paper a two-temperature plasma model is established and applied to the injection of cold gases into an atmospheric-pressure, high-intensity argon arc. The required nonequilibrium plasma composition and the non-equilibrium transport properties are also calculated. The results show that the arc becomes constricted at the location of gas injection due to thermal and fluid dynamic effects of the injected cold flow. Enhanced Joule heating in the constricted arc path raises the electron as well as the heavy-particle temperatures. This temperature increase resists, via secondary effects, the penetration of the cold gas into the hot arc core which behaves more or less as a “solid body” as far as the injected flow is concerned. The temperature discrepancy between electrons and heavy particles is most severe at the location of cold flow injection, a finding which may have important consequences on chemical reactions in an arc plasma reactor.
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    URL: http://dx.doi.org/10.1007/BF00568837
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    The design of plasma etchants (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 317-363 
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    ISSN: 1572-8986
    Keywords: Plasma etching ; etchant gas mixtures ; etching parameters ; review
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Theory and practice of plasma etching are critically reviewed. Some unifying principles are extended to explain a large body of experimental data, encompassing more than 20 substrate materials in dozens of etchant gas mixtures. These basic concepts can be used to select new etchants and plasma etching parameters.
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    Diagnostics of microwave-induced plasmas and polymerization of gaseous hydrocarbons (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 377-395 
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    ISSN: 1572-8986
    Keywords: Microwave plasma ; polymerization ; plasma diagnostics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The microwave plasmas of gaseous mixtures of methane-argon and propyleneargon were analyzed along the flow stream by the electrical double floating probe system, optical spectroscopy, and quadrupole mass spectrometry. The plasma variables measured and considered were current density, electric field strength, electron temperature, positive ion and electron concentrations, and concentration of pyrolyzed and polymerized species. The results indicate that an irreversible process of polymerization of the hydrocarbons takes place in the plasma. The polymerization process reaches its maximum conversion downstream beyond the microwave cavity. The extent of polymerization was correlated to the concentration of positive ions and electrons in the plasma.
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    The use of “actinometer” gases in optical diagnostics of plasma etching mixtures: SF6-O2 (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 365-375 
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    ISSN: 1572-8986
    Keywords: Plasma etching (SF6-O2) ; spectroscopic analysis ; actinometer gases
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The spectroscopic emission intensities from excited F atoms in SF6-O2 discharges at 1 torr have been correlated to the densities of atoms in their ground electronic state by measuring the excitation efficiencies of the electrons in the energy range 11 to 17 eV with a method which essentially consists in the analysis of the emission of Ar or N2, added as “actinometer” gases to the discharge mixtures. The general applicability of the method has been tested by a direct titration of F atoms with chlorine. The spectroscopic analysis has allowed the determination of useful information on the trends of both the electron densities and their energies as a function of the oxygen percent in the feed.
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    Preparation of photovoltaic silicon by purification of metallurgical grade silicon with a reactive plasma process (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 397-418 
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    ISSN: 1572-8986
    Keywords: Silicon ; metallic impurities ; plasma zone melting
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The main methods of silicon purification involve physicochemical techniques of separation. They yield an ultrapure metal, but its price is not compatible with photovoltaic central power generation. The plasma zone melting process consists in the horizontal displacement of a melted zone under an argon-hydrogen-oxygen plasma. The melt zone is characterized by a vertical gradient of concentration and temperature which drains impurities toward the upper surface of the bar. Moreover, the displacement of the zone from the head to the tail of the bar ensures a horizontal drainage of impurities toward the tail. This technique has been used with success for purification of metallurgical grade silicon; for example, iron was reduced from 3500 ppm to 0.5 ppm at a displacement rate between 20 and 40 cm/h. The final impurity level was less than 1 ppm. The mass transfer was independent of the displacement rate at 40 cm/h, but dependent on the heat transfer rate. The segregation of the metals is caused by drainage toward the tail of the bar, while the plasma vaporizes impurities since the metallic and metalloidic impurities have high vapor pressures (e.g., S, P, C, O, Mn). Acid (HF-HNO3) is used to dissolve the impurities between each passage of the zone. Boron elimination depends directly on the plasma oxygen concentration. Classical mathematic models of zone melting are not valid for plasma melting zone processes.
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    Synthesis of β-WC1−x in an atmospheric-pressure, thermal plasma jet reactor (1983)
    Springer
    Plasma chemistry and plasma processing 3 (1983), S. 115-133 
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    ISSN: 1572-8986
    Keywords: Thermal plasma synthesis ; tungsten carbides ; x-ray diffraction and electron microscopy
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    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Studies of the chemical reactions between α-WC and CH4 as well as between WO3 and CH4 in an atmospheric argon plasma jet reactor reveal that the high-temperature tungsten carbide (β-WC1−x) may be formed by injecting either α-WC or WO3 with methane as carrier gas into an argon plasma jet. The maximum conversion of α—WC into β-WC1−x reaches 52%, whereas conversion ratios in excess of 98% are observed when WO3 is used as the primary reactant. X-ray diffraction studies indicate a new FCC phase with a lattice parameter smaller than that of β-WC1−x which is typically produced in some of the reactions. This new phase shows a sharp lattice parameter change between 700 and 800°C upon annealing in argon. The temperature of transition of β-WC1−x to the other two more common carbide phases occurs around 470°C. The β-WC1−x is more stable than β-W2C to acid attack and its resistance is approximately the same as that of α-WC.
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    Announcements (1983)
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    Plasma chemistry and plasma processing 3 (1983), S. 137-137 
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    ISSN: 1572-8986
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
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    URL: http://dx.doi.org/10.1007/BF00566033
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    Plasma polymerization of ethane. I. Experimental studies of effluent gas composition and polymer deposition rates (1983)
    Springer
    Plasma chemistry and plasma processing 3 (1983), S. 139-161 
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    ISSN: 1572-8986
    Keywords: RF plasma ; plasma polymerization ; gas chromatrography ; experimental
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The plasma polymerization of ethane was studied in a flow reactor of rectangular cross section. The plasma was sustained between parallel-plate electrodes by an RF generator operating at 13.56 MHz. The composition of the gas leaving the reactor was analyzed by gas chromatography. Polymer deposition rates were measured as a function of axial position in the reactor, using a quartz-crystal microbalance. The effluent gas is composed primarily of unreacted C2H6 and H2. Significant concentrations of CH4, C2H4, C2H2, and C3H8, and small amounts of C3H6, i-C5H12, and n-C5H12, are also observed. The distribution of these products is a strong function of the discharge power and of the gas pressure and residence time in the plasma. These experimental variables also affect both the rate of polymer deposition and the shape of the deposition profile along the reactor axis.
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    Chemical relaxation study of the heterogeneous silicon-hydrogen system under plasma conditions (1983)
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    Plasma chemistry and plasma processing 3 (1983), S. 219-234 
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    ISSN: 1572-8986
    Keywords: Silicon/hydrogen discharge ; mass spectrometry ; chemical relaxation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The chemical relaxation technique consists of measuring the response of a chemical system to a small disturbance of an equilibrium or a nonequilibrium steady state. Since, for a small perturbation, the response of any complex and stable system is linear, rate constants of elementary processes under actual plasma conditions can be evaluated directly from the relaxation data. Applications of this technique to the kinetic study of the formation and decomposition of silane are presented and compared with previous data obtained by a flow method. In addition, relaxation data are presented which show that the main reaction channel of silance decomposition in glow discharges is the electron-impact-induced fragmentation into SiH2 radicals (or ions) and H2 molecules.
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    Plasma polymerization of ethane. II. Theoretical analysis of effluent gas composition and polymer deposition rates (1983)
    Springer
    Plasma chemistry and plasma processing 3 (1983), S. 163-192 
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    ISSN: 1572-8986
    Keywords: RF plasma ; plasma polymerization ; modeling ; theoretical
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A theoretical model has been developed to describe the deposition of polymer occurring in a capacitatively coupled, low-pressure, RF discharge sustained in ethane. The reaction mechanism chosen for this model assumes that polymer formation is controlled by the formation of free radicals in the plasma and the subsequent reaction of these species at the surface of the electrodes used to sustain the plasma. Convective and diffusive transport is taken to occur in the direction parallel to the electrodes. Diffusive transport perpendicular to the electrodes is considered to be rapid, and hence the gradients in this direction are taken to be negligible. Both the composition of the gas leaving the plasma reactor and the axial profile of polymer deposition rate within the reactor, observed experimentally, are predicted accurately by the model. Results obtained from the model have also been used to estimate the kinetic chain length and degree of unsaturation in the polymer. Both predictions are found to be in reasonable agreement with experimental observations.
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    Book review (1983)
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    Plasma chemistry and plasma processing 3 (1983), S. 135-136 
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    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
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    URL: http://dx.doi.org/10.1007/BF00566032
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    Dissociation and recombination of oxygen atoms produced in a microwave discharge. Part II. Theoretical calculations (1983)
    Springer
    Plasma chemistry and plasma processing 3 (1983), S. 79-95 
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    ISSN: 1572-8986
    Keywords: Plasma chemistry ; chemical kinetics ; oxygen plasma
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract In this study, the degree of dissociation and recombination of oxygen atoms produced by a microwave discharge in oxygen is examined by comparing a theoretical model of the kinetic mechanisms to chemical titration data. The results show that a one-dimensional, temperature-dependent model of the neutral species of the system can predict the oxygen atom concentration profile as measured by nitrogen dioxide titration. The model also indicates that the temperature of the gas is approximately 1000 K and that an overall gas temperature and velocity increase is due to electrical heating by the microwave discharge and not due to the enthalpy change of the species in the system.
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    Effect of the Knudsen number on heat transfer to a particle immersed into a thermal plasma (1983)
    Springer
    Plasma chemistry and plasma processing 3 (1983), S. 97-113 
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    ISSN: 1572-8986
    Keywords: Knudsen effect ; heat transfer ; small particles ; thermal plasmas ; analytical studies
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The Knudsen effect on heat transfer to a particle exposed to a thermal plasma is important for many practical situations experienced in plasma chemistry and plasma processing. This paper provides theoretical results of this effect based on the “heat conduction potential jump” approach. It is shown that a correction factor which depends on the Knudsen number must be introduced into the expressions for heat fluxes obtained previously based on the continuum approach. The Knudsen effect is stronger for smaller particles and it is also more pronounced for an Ar-H2 plasma (compared to Ar and nitrogen plasmas at the same temperature). Since the Knudsen effect depends on the surface temperature of a particle, calculation of particle heating becomes more complicated.
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    Announcements (1983)
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    Plasma chemistry and plasma processing 3 (1983), S. 421-421 
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    ISSN: 1572-8986
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
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    URL: http://dx.doi.org/10.1007/BF00564628
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    Static pressure and heat flux measurements of a thermal argon plasma flow in a water-cooled tube (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 43-57 
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    ISSN: 1572-8986
    Keywords: Static pressure ; heat flux ; thermal plasma ; tube flow
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The momentum and energy transfer phenomena with large temperature difference were investigated experimentally and theoretically, using an argon atmospheric thermal plasma. The plasma was generated by an arc discharge, 4–6 kW, and flowed into a water-cooled copper tube for static pressure measurements and into a copper block with the same size hole (8 mm i.d.) for measuring heat fluxes using a transient method. The argon flow rate was 2.77–8.31×10−4 kg/s. The static pressure of the plasma flow shows a different variation from that of an ordinary flow and does not decrease monotonically. The axial distributions of the numerical calculations are in fair agreement with those of the experiments, and it is concluded that the contributions of recombination and of physical properties play important roles in the behavior of the confined thermal plasma flow.
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    Gas-phase reactions of CF2 with O(3P) to produce COF: Their significance in plasma processing (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 271-283 
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    ISSN: 1572-8986
    Keywords: Plasma etching ; CF2 reactions ; F atom production ; CF4-O2 plasmas ; COF reactions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Reactions between CF2 and O(3P) have been studied at 295 K in a gas flow reactor sampled by a mass spectrometer. The major reaction for CF2 has been found to be $$CF_2 + O \to COF + F$$ with $$CF_2 + O \to CO + 2F(F_2 )$$ more than a factor of three slower. The rate coefficient for all loss processes for CF2 on reaction with O is (1.8±0.4)×10−11 cm3 s−1. The COF produced in (18) undergoes a fast reaction with O to produce predominantly CO2. $$COF + O \to CO_2 + F$$ It is uncertain from the results whether or not $$COF + O \to CO + FO$$ occurs, but in any event (19) is the major route. The rate coefficient for the loss of COF in this system [i.e., the combined rate coefficients for (19) and (20)] is (9.3±2.1)×10−11 cm3 s−1. Stable product analysis reveals that for each CF2 radical consumed, the following distribution of stable products is obtained: COF2 (0.04±0.02), CO (0.21±0.04), and CO2 (0.75±0.05). Thus COF2, which we assume is produced via $$CF_2 + O \xrightarrow{M} COF_2$$ is a very minor product in this reaction sequence. The measured rate coefficients demonstrate that reactions (18) and (19) are important sources of F atoms in CF4/O2 plasmas.
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    Calculation of thermodynamic and transport properties of a typical arc furnace plasma (1984)
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    Plasma chemistry and plasma processing 4 (1984), S. 315-323 
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    ISSN: 1572-8986
    Keywords: Arc furnaces ; thermodynamic and transport properties ; calculations
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Using a previously developed computer program, thermodynamic and transport properties of a typical arc furnace plasma are calculated in order to single out those species and / or reactions which exert a dominating influence on the properties of such complex mixtures. The results indicate that dissociation of molecular species in the arc furnace atmosphere has a strong effect on the specific heat and on the thermal conductivity of the mixture. The electrical conductivity is strongly affected by metallic vapors from the molten metal pool and the slag cover.
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    Synthesis gas production from peat using a steam plasma (1984)
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    Plasma chemistry and plasma processing 4 (1984), S. 297-313 
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    ISSN: 1572-8986
    Keywords: Nontransferred arc ; peat gasification ; plasma reaction model
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    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A steam plasma was used to convert peat into a synthesis gas, suitable for methanol production, in a cocurrent transport reactor. A cylindrical stainless-steel reactor 20 cm in diameter and 120 cm long was used. The effects of temperature and the carbon/ steam molar ratio on the product gas composition and carbon conversion were investigated. Finely ground peat (mean particle size, 63 µm; moisture content, 15.5%) was fed continuously through the reactor top and exposed to mean reaction temperatures ranging from 1250 to 1420 K. The plasma inlet temperature was calculated to be of the order of 3500 K and total powers as high as 62 kW were used. A carbon conversion of 89% and a hydrogen-to-carbon monoxide ratio of 1.8 in the product gas were obtained. A simple model of the reacting system suggested that a conversion of 90% (needed for an industrial process) and a hydrogen-to-carbon monoxide ratio of two could be obtained with equipment modifications.
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    Plasma-assisted etching (1982)
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    Plasma chemistry and plasma processing 2 (1982), S. 1-41 
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    ISSN: 1572-8986
    Keywords: Plasma etching ; mechanisms ; apparatus selection ; review
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The mechanistic and parametric complexity of a plasma etching environment often causes confusion and delays in the development of a suitable plasma etching process. This paper is an attempt to alleviate this problem by discussing some of the important physical and chemical phenomena and, where possible, relating these phenomena to apparatus selection and operation.
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    Reaction of hydrogen with aromatic compounds in a 13.6-MHz discharge (1982)
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    Plasma chemistry and plasma processing 2 (1982), S. 43-59 
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    ISSN: 1572-8986
    Keywords: Plasma reactions ; low-pressure rf discharge ; aromatic compounds ; gas chromatography
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A series of aromatic compounds C6H5X (X=CH3, Cl, NO2, NH2, OCH3, CO2CH2CH3, COCH3, CN) were reacted with hydrogen in a 13.6-MHz inductively coupled glow discharge. The flow rates of aromatic and hydrogen were typically 0.5 mmol/min and 18 mmol/min, respectively. The applied power was varied from 50–200 W and the total pressure was varied from 2–14 torr. The products were collected and analyzed by gas chromatography. Three types of reactions were observed: (1) addition of hydrogen to the aromatic, (2) replacement of the group X by hydrogen, and (3) reactions characteristic of aromatic in the absence of hydrogen. The toluene reaction was studied most carefully. Methylcyclohexenes and benzene were the major products identified. The benzene was optimized by increasing the power and decreasing the pressure of either hydrogen or toluene. Reaction of toluene-d8 with hydrogen revealed that hydrogens were sequentially exchanged for deuteria on toluene and each of the products. A new apparatus is described which allows flow rates and pressure to be preselected and controlled and which allows a series of product samples to be collected without quenching the plasma.
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    Neutral and ion chemistry in a C2H4-SiH4 discharge (1982)
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 81-93 
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    ISSN: 1572-8986
    Keywords: Plasma ; mass spectrometry ; electron impact dissociation ; radical reactions ; ion-molecule reactions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract This paper reports on a mass spectrometric study of the neutral and ionic species in a low-pressure rf discharge sustained in a C2H4-SiH4 mixture diluted in helium. It is shown that C2H4 is readily decomposed into C2H 2 * and C2H3. The formation of secondary products such as C4H2, C4H4, and C4H6 is observed and confirms the presence of C2H2 in the discharge. Methylsilane (CH3SiH3) and ethylsilane (C2H5SiH3) are also synthesized in this discharge. It is also observed that the major ions C2H 4 + , C3H 5 + , SiH 3 + , Si2H 4 + , SiCH 3 + , SiC2H 3 + , and SiC2H 7 + are not representative of the direct ionization of neutral species. Their formation is thus interpreted on the basis of ion-molecule reactions.
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    Ion and radical reactions in the silane glow discharge deposition of a-Si:H films (1982)
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 61-80 
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    ISSN: 1572-8986
    Keywords: Silane plasma ; amorphous silicon ; plasma deposition mechanism
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A mass spectrometric analysis of the positive ions and neutral products in a silane glow discharge has been performed. The active species, created by dissociation, disproportionation, and ion-molecule reactions are mainly SiH2, SiH3, and H. A calculation of the distribution of the SiH n + ions shows that the silane concentration monitors the abundance of SiH 3 + . The diffusional transport of radicals toward the discharge-tube walls can explain the observed deposition rates. The study of SiH4-SiD4 and SiH4-D2 plasmas emphasizes several reactions which modify the free-radical populations depending on the discharge conditions: disproportionation, termination, recombination, and abstraction. Heterogeneous reactions have also been observed: etching of the film by H atoms and direct incorporation of hydrogen in the growing film. A general scheme for the plasma deposition mechanism is proposed.
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    Kinetic study of the heterogeneous Si/H system under low-pressure plasma conditions by means of mass spectrometry (1982)
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 95-107 
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    ISSN: 1572-8986
    Keywords: Hydrogen plasma ; silicon deposition ; kinetic study ; mass spectrometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The kinetics of the silicon/hydrogen low-pressure discharge system have been measured using a flow technique and mass spectrometry. Results show that at long residence times the system operates under a partial chemical equilibrium even though it is not at thermodynamic equilibrium. The present work indicates that the decisive parameter controlling the structural properties of the deposit (i.e., the formation of either amorphous or microcrystalline silicon) is the departure of the system from the partial chemical equilibrium.
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    Summary of meetings (1982)
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    Plasma chemistry and plasma processing 2 (1982), S. 109-109 
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    ISSN: 1572-8986
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
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    URL: http://dx.doi.org/10.1007/BF00566861
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    Announcements (1982)
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    Plasma chemistry and plasma processing 2 (1982), S. 111-111 
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    ISSN: 1572-8986
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
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    URL: http://dx.doi.org/10.1007/BF00566862
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    Plasma etch chemistry of aluminum and aluminum alloy films (1982)
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 141-155 
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    ISSN: 1572-8986
    Keywords: Plasma etching ; plasma chemistry ; aluminum etching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The chemistry occurring in glow discharges used to etch aluminum and aluminum alloy films is examined and is related to recurring problms such as initiation and reproducibility of etching, polymer or residue formation, photoresist degradation, aluminum corrosion, and safety aspects. The relative effects of different etch gases on these problems is discussed in light of aluminum surface chemistry and gas-phase plasma chemistry.
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    URL: http://dx.doi.org/10.1007/BF00633130
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    The use of electrostatic probes for plasma diagnostics—A review (1982)
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    Plasma chemistry and plasma processing 2 (1982), S. 113-140 
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    ISSN: 1572-8986
    Keywords: Plasma diagnostics ; electrostatic probes ; Langmuir probes
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The use of electrostatic, or Langmuir, probes for plasma diagnostics is reviewed. The emphasis is on experimental implementation and current techniques, and particular attention is paid to sources of error in theoretical interpretation as well as to experimental problems that can occur in complex, reactive plasmas.
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    Experiment planning, mathematical modelling, and nonlinear optimization of the ion-nitriding process in a glow-discharge plasma (1982)
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 167-183 
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    ISSN: 1572-8986
    Keywords: Ion-nitriding process ; experiment planning ; mathematical modelling ; nonlinear optimization
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A new, efficient method for investigating and optimizing the ion-nitriding process in a glow-discharge plasma is proposed and worked out in detail for the mass kinetics of Rp-3 steel. This method, which is based on the concepts of experiment planning, mathematical modelling, and nonlinear optimization, is quite general and potentially applicable to a wide class of technological and other processes depending on several parameters.
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    Effect of heating on dissociation of water vapor in high-frequency plasmas and formation of hydrogen peroxide in a cold trap downstream of the plasma (1982)
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 157-166 
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    ISSN: 1572-8986
    Keywords: High-frequency plasmas ; water vapor ; hydrogen peroxide
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract At low flow rates (0.7–2.8 mmol hr−1) and long residence times (2.3–8.5 s) nearly 60% of the input water vapor was decomposed by a 13.56-MHz rf discharge. Downstream of the discharge a trap cooled by liquid nitrogen collected nearly constant yields of H2O2. The decomposition is representable by the equation 2H2O=H2O2+H2. The overall rate of decomposition was found to depend on the absorbed power density. Heating the rf plasma and its spatial afterglow from 25 to 600°C did not significantly change the percent decomposition of H2O and the formation of H2O2. Above 600°C, however, a continuous decrease in H2O2 yield was observed with increasing temperature, and this was associated with the increasing formation of H2O from the dissociated products such as highly excited OH radicals which otherwise produce the precursors of H2O2. The same heating effects were observed in the case of the spatial afterglow of a 2.45-GHz microwave cavity discharge in water vapor under essentially similar conditions. It appears that at the high temperatures the reaction OH+OH→H2O+O is favored over the reaction O+OH→O2+H. This limits the formation of O2 and consequently decreases the H2O2 yield.
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    Diagnostics and decomposition mechanism in radio-frequency discharges of fluorocarbons utilized for plasma etching or polymerization (1982)
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 213-231 
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    ISSN: 1572-8986
    Keywords: Plasma etching and polymerization ; optical and mass spectroscopy ; RF discharge
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Optical emission (180–800 nm) and mass spectroscopy have been used to study the CF4, CF4+O2, C2F6, C2F6+H2, CF3Cl, and C2F4 decomposition in radio-frequency discharges. The analysis of the stable and unstable discharge products has allowed the suggestion of decomposition channels for the various gases and to classify the fluorinated gases according to their predominant etching or polymerizing characteristics on the basis of the active species present in the plasma. A new broad emission continuum centered at λ=290 nm (FWHM=66 nm) has also been identified and it has been tentatively assigned to CF+ 2.
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    Heat transfer to a single particle exposed to a thermal plasma (1982)
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    Plasma chemistry and plasma processing 2 (1982), S. 185-212 
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    ISSN: 1572-8986
    Keywords: Heat and mass transfer ; small particles ; thermal plasmas ; exact and approximate solutions ; analytical studies
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract This paper is concerned with an analytical study of the heat and mass transfer process of a single particle exposed to a thermal plasma, with emphasis on the effects which evaporation imposes on heat transfer from the plasma to the particle. The results refer mainly to an atmospheric-pressure argon plasma and, for comparison purposes, an argon-hydrogen mixture and a nitrogen plasma are also considered in a temperature range from 3000 to 16,000 K. Interactions with water droplets, alumina, tungsten, and graphite particles are considered in a range of small Reynolds numbers typical for plasma processing of fine powders. Comparisons between exact solutions of the governing equations and approximate solutions indicate the parameter range for which approximate solutions are valid. The time required for complete evaporation of a given particle can be determined from calculated values of the vaporization constant. This constant is mainly determined by the boiling (or sublimation) temperature of the particles and the density of the condensed phase. Evaporation severely reduces heat transfer to a particle and, in general, this effect is more pronounced for materials with low latent heat of evaporation.
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    URL: http://dx.doi.org/10.1007/BF00633133
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    Electron-impact-induced anisotropic etching of silicon by hydrogen (1982)
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    Plasma chemistry and plasma processing 2 (1982), S. 233-246 
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    ISSN: 1572-8986
    Keywords: Hydrogen plasma ; plasma etching ; electron-impact enhancement
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The etch rate of silicon in a hydrogen low-pressure discharge plasma can be strongly enhanced by electron bombardment, reaching presently up to ∼1000 Å/min. The etch rate increases linearly with increasing electron current density and hydrogen pressure (range ∼0.05–0.7 mbar) and decreases with increasing temperature, yielding an activation energy of −4.2 kcal/mole in a temperature range of ∼80 to 300°C. The etching remains anisotropic within the whole pressure range studied.
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    Formation of niobium boride from NB2O5 and boron with plasma arc (1982)
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 247-253 
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    ISSN: 1572-8986
    Keywords: Borothermic reduction ; plasma arc ; niobium boride ; boron monoxide
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract When a mixture of Nb2O5 and boron is heated to about 3000°C and subsequently annealed at about 2000°C in an argon plasma arc, NbB2 is obtained. The products are found to be superconductors, theT cof which is higher than 4 K. Some properties of the products, such as Vickers hardness and density, are comparable with those of NbB2 prepared from niobium and boron. In the reaction forming NbB2, a white powder is also obtained. The powder is identified as H3BO3 and is formed by the reaction between BO and water in the atmosphere. Therefore, the reaction of NbB2 formation can be written as Nb2O5+9B=2NbB2+5BO.
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    Influence of velocity and surface temperature of alumina particles on the properties of plasma sprayed coatings (1982)
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 255-291 
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    ISSN: 1572-8986
    Keywords: Plasma spraying process ; particle temperature and velocities ; plasma diagnostics ; alumina coatings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract In this paper are described the main characteristics of the plasma spraying process of alumina deposits, i.e., the temperature and flow field of the plasma jets obtained with the classical spraying torches, the injection of the particles into the plasma jet, the particle surface temperature and velocities in the plasma (measured for calibrated alumina particles), and the coating generation. The measurements on the alumina particles are compared with the predictions of a mathematical model. The experimental and computed particle velocities are in rather good agreement. However, this is not the case for the particle surface temperature. Possible reasons for the discrepancy are proposed (influence of the carrier gas, thermophoretic forces, and poor penetration of the particles into the plasma core even for an injection velocity twice that of the optimal calculated one, as shown by recent measurements). Finally the correlations between the particle velocities and surface temperature, and the properties of the alumina coating (porosity, crystal structure, mechanical properties) are studied.
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    Unsteady heating and radiation effects of small particles in a thermal plasma (1982)
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    Plasma chemistry and plasma processing 2 (1982), S. 293-316 
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    ISSN: 1572-8986
    Keywords: Heating ; melting ; and evaporation of particles ; radiation effects ; analysis ; computation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Based on exact solutions for the heat flux to a particle exposed to a thermal plasma given in a previous paper, initial unsteady heating (including heating of the solid phase, melting of the solid phase, heating of the liquid phase, and evaporation) and radiation effects are considered. Closed-form solutions can be obtained for particles with infinite thermal conductivities. The results show that the time periods required for the various steps are all proportional to the square of the particle radius, suggesting that reduced time periods which are independent of the particle radius are appropriate bases for comparison. Results are presented for three materials (alumina, tungsten, and graphite) and three types of plasmas (argon, argon-hydrogen mixture, and nitrogen). It is shown that evaporation (or sublimation) is by the slowest step among all processes in a plasma reactor if complete evaporation (or sublimation) of the particles is desired. Studies of the temperature history of particles with finite thermal conductivities show that temperature gradients within the particles depend on the ratio of the particles' thermal resistance to that of the plasma. In spite of the difference in initial heating, the analytical expressions based on infinite thermal conductivities predict the correct total time spent for both heating and evaporation even for low-conductivity materials such as alumina. The effect of radiation losses from a particle during heating becomes important for large particles, for high-boiling-point materials, and for low enthalpy differences between the plasma and the particle surface.
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    Kinetics and mechanism of the decomposition of CS2, OCS, and SCl2 in a radiofrequency pulse discharge (1982)
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 331-339 
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    ISSN: 1572-8986
    Keywords: Pulsed r.f. discharge ; kinetic spectroscopy ; identification of transient species ; rate coefficients
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The identification of transient species in r.f. discharges and measurement of rate coefficients for their reactions contributes to the understanding of the complex mechanisms in r.f. plasma chemistry. Using kinetic spectroscopy in conjunction with a short-duration r.f. pulse to investigate the decomposition of CS2, OCS, and SCl2 at low pressure, it has been shown that the predominant primary dissociation steps are CS2→CS+S, OCS→CO+S(1D), and SCl2→S+Cl+Cl. With OCS the most important subsequent steps involved the formation and removal of S2: S(1D)+OCS→CO+S2(a1Δ), S2(a1Δ)+M→S2(X3Σ)+M, (13), and 2S2+M→S4+M(15). Taking the previously published value of k12, computer simulation gave the rate coefficient values k13=6.4±2.4×108 mol−1 dm3 s−1 and k15=1.8±0.5×1013 mol−2 dm6 s−1 at 295±3 K.
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    Temperature and velocity fields in a gas stream exiting a plasma torch. A mathematical model and its experimental verification (1982)
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 317-332 
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    ISSN: 1572-8986
    Keywords: Plasma jet ; velocity field ; temperature field ; measurements and modeling
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A mathematical model was developed to predict the velocity and temperature fields in a free plasma jet issuing from a D.C. plasma torch. It was assumed that the temperature and velocity at the torch nozzle were specified and the turbulent Navier-Stokes equations were solved in conjunction with a two-equation model of turbulence and the energy transport equation. The model was formulated in terms of the two-dimensional elliptic equations to facilitate its future extension to nonparabolic problems. The predictions of the model were compared with experimental measurements obtained from laser Doppler and spectroscopic techniques. Good overall agreement was found between the theoretical predictions and the experimental measurements for two sets of initial conditions corresponding to nitrogen/hydrogen and argon/hydrogen plasmas. Radiation was found to have a small effect on the overall heat transfer process, and it is suggested that the assumption of an optically thin radiation loss per unit volume is sufficiently accurate for most engineering applications. The significance of this work lies in the fact that, for the first time, it is possible to test the assumptions of the current model against a reliable set of experimental measurements.
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    Effect of frequency on the deposition of microcrystalline silicon from tetrachlorosilane in low-pressure r.f. plasmas (1982)
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 341-351 
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    ISSN: 1572-8986
    Keywords: r.f. plasma ; silicon deposition ; experimental
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The efficiency of reduction of silicon tetrachloride and the rate of deposition of Si in a low-pressure r.f. plasma was investigated at two frequencies (0.4 and 27 MHz) as a function of position with regard to the rf coil, pressure, and time of deposition. At 27 MHz the decomposition efficiency of silicon tetrachloride and the deposition rate of Si are about three times higher than at 0.4 MHz.
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    Quenching of air plasma effluents (1982)
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    Plasma chemistry and plasma processing 2 (1982), S. 387-398 
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    ISSN: 1572-8986
    Keywords: Plasma quenching ; nitrogen fixation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The concentration of nitric oxide in the effluent of an air plasma (2350–2600 K) was studied as a function of the rate of quenching. Rapid quenching leads to concentrations higher than those predicted from stagnant equilibrium conditions. This observation may be attributed to a lack of chemical equilibrium under the conditions investigated.
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    The quenching of vibrationally excited N 2 + ions by various neutrals (1982)
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    Plasma chemistry and plasma processing 2 (1982), S. 353-359 
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    ISSN: 1572-8986
    Keywords: Selected ion flow tube ; rate coefficients ; quenching ; ionic vibrational excitation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Using a selected ion flow tube, the quenching of the vibrational excitation of N 2 + (X, v≠0) by Ne, N2, O2, NO, and CO2 was investigated, and the following thermal quenching rate coefficients, kq, were obtained respectively (all in units of 10−10 cm3 sec−1): 0.045, 5, 1.2, ≤0.3, ≤1. For the charge transfer of N 2 + with O2, NO, and CO2, the respective rate coefficients (in units of 10−10 cm3 sec−1) 0.5, 3, and 7 were obtained independently of whether N 2 + (X) was vibrationally excited or not.
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    Operating characteristics and energy distribution in transferred plasma arc systems (1982)
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    Plasma chemistry and plasma processing 2 (1982), S. 361-386 
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    ISSN: 1572-8986
    Keywords: Transferred arc ; characteristics ; heat transfer ; experimental
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A specially designed plasma chamber was constructed to study the operating characteristics of a dc plasma-transferred arc of argon, struck between a fluid convective cathode and a water-cooled anode. The arc voltage increased markedly with arc length and with an increase in the inlet velocity of the argon flow past the cathode tip, and much less with an increase in current. Radiation from the plasma column to the chamber walls and transfer of energy to the anode were the two principal modes of transfer of the arc energy. The former was dominant in the case of long arcs and at high inlet argon velocities. At the anode, the major contribution was from electron transfer, which occurred on a very small area of the anode (∼5 mm in diameter). Convective heat transfer from the plasma was somewhat less. In all cases, the arc energy contributions to cathode cooling and to the exit gas enthalpy were small. From total heat flux and radiative heat transfer measurements, it was estimated that the plasma temperature just above the anode was in the range 10,000–12,000 K. Preliminary experiments with an anode consisting of molten copper showed that the arc root was no longer fixed but moved around continuously. The arc was othwewise quite stable, and its operating characteristics differed little from those reported for solid anodes, in spite of the greater extent of metal vaporization.
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    Announcements (1982)
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    Plasma chemistry and plasma processing 2 (1982), S. 421-421 
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    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
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    Kinetic modelling of the reduction of SiCl4 in an arc heater for the production of silicon (1982)
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 399-419 
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    ISSN: 1572-8986
    Keywords: Plasma reduction ; silicon ; modeling and experiments
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The conversion of SiCl4 into Si has been achieved from reduction by a hydrogen plasma produced in an arc heater. As the results (conversion yield about 60%) are far from chemical equilibrium predictions, a kinetic model is proposed using the few kinetic data available in the literature and a temperature history of the reactants deduced from measurements of the temperatures and velocities of the flowing chemical mixture.
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    Application of nonequilibrium plasmas in organic chemistry (1983)
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    Plasma chemistry and plasma processing 3 (1983), S. 1-61 
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    ISSN: 1572-8986
    Keywords: Nonequilibrium plasmas ; organic chemistry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract All organic molecules having similar ionization and dissociation energies, are sensitive to elevated temperatures and can easily be destroyed by plasma. Under selective experimental conditions, however, organic plasma chemistry can be a valuable synthetic method. Main areas of applications are the generation of reactive species, isomerizations, eliminations, cyclisations, condensations, and multistep reactions. During the last decade numerous preparative methods have been reported. These are summarized together with many unpublished results from the Tübingen laboratory. In addition reaction mechanisms, selectivities, kinetics, economics, possibilities, and limitations of organic plasma chemistry are discussed.
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    Dissociation and recombination of oxygen atoms produced in a microwave discharge. Part I. Experiment (1983)
    Springer
    Plasma chemistry and plasma processing 3 (1983), S. 63-78 
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    ISSN: 1572-8986
    Keywords: Microwave discharge ; nitrogen dioxide titration ; oxygen plasma
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A microwave-initiated plasma (2.44 GHz) flow system has been developed to generate and detect atomic oxygen as a function of distance from the discharge exit. It was found that an increase in power or a decrease in pressure resulted in larger amounts of atomic oxygen at specific points downstream from the discharge. Flow rate had little effect on the production of atoms, but increasing the flow rate did result in increasing the yield of oxygen atoms. The largest dissociation measured was 70% at a pressure of 12 Torr, a flow rate of 0.4 cm3/sec, and 500 W of absorbed power.
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    URL: http://dx.doi.org/10.1007/BF00566028
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    Energy deposition in metals by laser-guided discharges (1983)
    Springer
    Plasma chemistry and plasma processing 3 (1983), S. 367-381 
    Details
    ISSN: 1572-8986
    Keywords: Laser-guided discharges ; hole boring ; surface deposition ; electrical discharge
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Experimental and theoretical results are reported concerning energy deposition on metal surfaces by laser-guided discharges (LGD) in argon and nitrogen at atmospheric pressure. These experiments have demonstrated effective guidance of 30-kV discharges for lengths up to 6 cm. The electron temperature and density have been measured spectroscopically for LGD plasmas. Scaling of the melted metallic mass has been studied as a function of discharge circuit parameters for both argon and nitrogen. Results show that laser-guided discharges in nitrogen couple energy to metal samples more efficiently than argon discharges with identical electrical parameters. This experimentally observed difference in energy deposition has been shown to be in good agreement with a theoretical model which accounts for the recombination energy of nitrogen on the metallic surface. Melting has been accomplished by LGDs in copper, iron, aluminum, and titanium foils. Laser-guided discharges have also bored holes and deposited surface layers of aluminum and titanium onto stainless steel.
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    URL: http://dx.doi.org/10.1007/BF00564625
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    Thermodynamic study of the ways of preparing silicon, and its application to the preparation of photovoltaic silicon by the plasma technique (1983)
    Springer
    Plasma chemistry and plasma processing 3 (1983), S. 393-420 
    Details
    ISSN: 1572-8986
    Keywords: Plasma ; silicon ; photovoltaic ; thermodynamic calculation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract After a comprehensive review of the bibliography on the production of solar grade silicon by various methods and starting from various raw materials, we develop the thermodynamic calculations of the reduction (with hydrogen or sodium) and of the pyrolysis of SiO2, SiCl4, SiF4, SiH4, and SiHCl3. For temperatures varying from 1000 to 6000 K at atmospheric pressure or at 10−2 atm, we present the corresponding composition diagrams together with the corresponding calculated reduction rates and conversion to silicon and the enthalpies required to heat the various mixtures considered up to 6000 K. As a conclusion we attempt to define, through our calculations, in connection with the prices of the raw materials and with the few experiments developed for the production of silicon under plasma conditions, the best raw materials for treatment by plasma to obtain silicon: SiH4 is probably best for obtaining high-purity silicon, and SiCl4 the cheapest.
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    URL: http://dx.doi.org/10.1007/BF00564627
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    Decomposition of an organophosphorus material in a silent electrical discharge (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 15-20 
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    ISSN: 1572-8986
    Keywords: Silent discharge ; plasma decomposition ; organophosphorus ; gas chromatography ; GC-MS
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract An organophosphorus compound, C7H16FO2P, was reacted with air in a silent ac discharge. This paper discusses the observed fragmentation and products of the reaction using Gas Chromatography-Mass Spectrometry.
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    URL: http://dx.doi.org/10.1007/BF00567368
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    Radiofrequency plasma decomposition of C n F2n+2-H2 and CF4-C2F4 mixtures during Si etching or fluoropolymer deposition (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 1-14 
    Details
    ISSN: 1572-8986
    Keywords: Silicon etching ; polymerization of fluorocarbons ; plasma decomposition of fluorocarbons
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Microscopic decomposition processes and gas-solid interactions in CnF2n+2-H2 and CF4-C2F4 discharges are studied by comparing mass-spectrometric results with actinometric emission diagnostics. The role played by CFx radicals is evident in the various processes of gas-phase formation of saturates and unsaturates as well as in the “activation growth mechanism” of polymer deposition.
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    URL: http://dx.doi.org/10.1007/BF00567367
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    Chemical mechanisms in C3F8-H2 radiofrequency discharges (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 21-31 
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    ISSN: 1572-8986
    Keywords: Etching and polymerization mechanism ; C3F8-H2 discharge ; fluorocarbons
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Discharges fed with C3F8-H2 mixtures have been studied by means of mass spectrometry in a tubular reactor operated at 0.5 torr and 50 W. Comparison of the results with those obtained with emission actinometry give additional evidence that emission actinometry and mass spectrometry are powerful diagnostic tools to monitor stable and unstable species in discharges utilized for dry etching and polymer depositions. Mechanisms for end product formation and polymer deposition are also discussed.
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    Nitriding of titanium with plasma jet under reduced pressure (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 33-42 
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    ISSN: 1572-8986
    Keywords: Nitriding of titanium ; argon-nitrogen plasma jet ; argon-nitrogen-hydrogen plasma jet ; emission spectroscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The nitriding of titanium with argon-nitrogen (3%) and argon-nitrogen (3%)-hydrogen (2%) plasma jets at pressures of 190 torr was studied. The reaction kinetics obeyed mainly a parabolic law. The parabolic kinetic constants were 10−10–10−8 g2 cm−4 s−1, which were 2–3 orders of magnitude larger than those in R.F. discharges. From emission spectroscopy, nitrogen atoms in the excited states were observed. The nitrogen atoms can promote the nitriding reaction. The effect of the addition of hydrogen to nitrogen is also briefly discussed.
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    Announcements (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 73-73 
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    ISSN: 1572-8986
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
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    URL: http://dx.doi.org/10.1007/BF00567373
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    Thermal decomposition of carbon dioxide in an argon plasma jet (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 59-72 
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    ISSN: 1572-8986
    Keywords: Thermal plasma ; decomposition ; carbon dioxide ; reaction rate ; quenching rate
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The decomposition of carbon dioxide to carbon monoxide and oxygen in an argon plasma is studied. The overall kinetic and energy-related parameters of the process, as well as the quenching rates of the products, are evaluated on the basis of measured radial and longitudinal profiles of both temperature and degree of decomposition in the high-temperature reaction zone.
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    Mass spectrometric diagnosis of the surface nitriding mechanism in a d.c. glow discharge (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 89-105 
    Details
    ISSN: 1572-8986
    Keywords: d.c. glow discharge ; steel surface nitriding ; molecular beam plasma diagnostics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Reactive constituents have been investigated in a molecular beam generated in the cathode surface glow area and surface boundary layer. Mixtures of nitrogen and hydrogen form NHx(x=0–4) compounds, which are of relevance in heterogeneous, plasma vs. metal nitriding reactions. Ammonia decomposition leads to NHx(x=2–4). Strong cataphoretic enrichment of hydrogen has been observed in the cathode glow area. Heterogeneous reactions of NHx with iron lead to the formation of iron nitrides via intermediates such as FeNH2–3. In a pulsed d.c. glow discharge, increased sputtering and decreased hydrogen enrichment have been observed.
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    URL: http://dx.doi.org/10.1007/BF00647190
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    Intermediate and high-mass ion beams from a 10-cm Duopigatron (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 75-88 
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    ISSN: 1572-8986
    Keywords: Duopigatron ; ion source ; instability ; source plasma ; ion acoustic ; sheath model ; noble gas
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Experimental studies of a 10-cm Duopigatron as a source of argon, krypton, and xenon ion beams are reported. Source plasma instabilities are examined, and the mass dependence of oscillation frequencies and instability onset conditions are determined. Arc current and density oscillations are found to be associated with ion acoustic fluctuations with frequencies scaling as 1/M1/2. Langmuir probe measurements within the source plasma double layer are used to indicate the physical mechanism responsible for the observed large-amplitude are current shifts. Ion beams have been extracted at energies up to 18 kV, and drain currents up to 540 mA for argon, 440 mA for krypton, and 520 mA for xenon have been achieved with source plasma densities in the range 1011–1012 cm–3. Excellent agreement with existing theoretical models has been obtained in the mass and density dependence of the extraction current, as well as the voltage at which transition from space-charge limited to ion saturation emission occurs.
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    URL: http://dx.doi.org/10.1007/BF00647189
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    Mass spectrometer-wall probe diagnostic of Ar discharges containing SF6 and/or O2: Reactive ions in etching plasmas (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 107-118 
    Details
    ISSN: 1572-8986
    Keywords: Negative ions ; positive ions ; etching plasmas ; SF6 ; O2
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Positive and negative ions of Ar/SF6 and Ar/SF6/O2 plasmas (etching plasmas) and of Ar/O2 plasmas (cleaning plasmas) in Pyrex tubes have been investigated using a mass spectrometer-wall probe diagnostic technique. The measurement of negative ions proved to be a very sensitive method for the detection of wall material. In etching plasmas with small admixtures of SF6, oxygen was found as the only representative of wall material. At larger amounts of SF6, silicon could be detected. In cleaning plasmas with small admixtures of O2 applied to a previously etched Pyrex surface, fluorine was found, indicating the reversal of fluoridation by oxygenation.
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    H2 plasma development of X-ray imaged patterns on plasma-polymerized resists (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 119-127 
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    ISSN: 1572-8986
    Keywords: X-ray resist ; vacuum lithography ; plasma polymerization ; plasma etching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract An X-ray imaged pattern on a plasma-polymerized film was successfully developed by H2 plasma etching. Plasma-polymerized MMA and 6FBMA were formed by using an inductively coupled argon flow type reactor. An X-ray imaged pattern on the film was attained through a knife-cut window of a gold plate. The X-ray was generated from a Cu target at 20 kV and main wavelength 1.54 Å. The pattern development was performed using a tubular type reactor with parallel plate electrodes. The quality of plasma-polymerized resists in an X-ray lithography was evaluated by comparing it with the conventional polymer in the dry and wet process, and the minimum dose rate for a visible pattern fabrication was measured to be 4.1 J/cm2 for both resists in H2 plasma etching development.
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    URL: http://dx.doi.org/10.1007/BF00647192
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    Effects of metallic vapor on the properties of an argon arc plasma (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 129-139 
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    ISSN: 1572-8986
    Keywords: Thermal plasmas ; contaminations ; transport properties
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract During thermal plasma processing of materials, vapor generated from injected particulate matter will enter the plasma. Even traces of metallic vapors may have a strong effect on the properties and the behavior of the plasma and on the associated heat flux to the injected particles. In this paper a model system is considered in which an argon plasma at atmospheric pressure is “contaminated” by small amounts of copper vapor. By using the Chapman-Enskog approximation for a multicomponent gas mixture the transport properties are calculated for such a contaminated argon plasma. The results show that there is a drastic effect on the electrical properties. For temperatures below 104 K, the electrical conductivity, for example, increases by more than an order of magnitude if metallic vapor is present. The presence of metallic contaminants is also somewhat felt by the reactional thermal conductivity. In contrast, there is no effect on the heavy-particle properties as long as the percentage of the contaminants remains small.
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    URL: http://dx.doi.org/10.1007/BF00647193
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    A transparent boron-nitrogen thin film formed by plasma CVD out of the discharge region (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 251-260 
    Details
    ISSN: 1572-8986
    Keywords: Boron-nitrogen films ; plasma CVD ; rf plasma
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A transparent boron-nitrogen thin film of thickness 550 nm was successfully deposited out of the discharge region by rf plasma CVD. The deposition was performed with diborane (4.8 vol % in N2) as the reactant gas and argon as the carrier gas by an inductively coupled reactor at a frequency of 13.56 MHz. The transparent films could be obtained at a low pressure of about 30 Pa, at a discharge power level of 30 W, and at room temperature without heating the substrate. The thin films obtained by rf plasma are compared with those obtained by microwave plasma. Both the refractive index and the deposition rate for the films deposited by microwave plasma are discussed according to the deposition conditions.
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    URL: http://dx.doi.org/10.1007/BF00568979
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    Absolute partial and total electron ionization cross sections for CCl4 from threshold up to 180 eV (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 235-249 
    Details
    ISSN: 1572-8986
    Keywords: Ionization cross section ; electron impact ; mass spectrometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Electron impact ionization of carbon tetrachloride was studied as a function of electron energy from threshold up to 180 eV. A double-focusing mass spectrometer system in combination with an improved electron impact ion source was used, alleviating the problems of ion extraction from the source and the transmission of the extracted ions through the mass spectrometer system. Absolute partial ionization cross sections for the occurrence of CCl 3 + , CCl 2 + , CCl+, Cl 2 + , Cl+, C+, CCl 3 2+ , and CCl 2 2+ have been determined. In addition, the total ionization cross-section function of CCl4 is reported and compared with theoretical predictions based on a classical binary encounter approximation. Using nth root extrapolation the following ionization energies of the doubly ionized fragment ions have been derived: AE(CCl 3 2+ )=30.4±0.3 eV; and AE (CCl 2 2+ )=31.8±0.3 eV. In accordance with theoretical predictions and previous results, no stable CCl 4 + has been detected, however, metastable dissociation processes CCl 4 + → CCl 3 + have been observed.
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    Chlorine incorporation in silicon films deposited by low-pressure rf discharges in gas mixtures of SiCl4+H2+Ar (1984)
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 261-270 
    Details
    ISSN: 1572-8986
    Keywords: Silicon films ; low-pressure rf discharges ; mass spectrometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Silicon films were deposited from tetrachlorosilane by its dissociation in argon and hydrogen rf plasma at a pressure of 2 Torr. The concentration of chlorine incorporated in the films was found to be dependent on the macrovariables of the plasma such as power input and substrate position in the plasma reactor. Mass spectrometric measurements of the plasma showed that the concentration of HCl in the plasma was strongly dependent on the power input and on position in the plasma along the gas stream. At high input powers the HCl formed in the plasma dissociates to free radicals, contributing to a recombination process in the gas phase and codeposition with silicon on the substrate. The correlation between the HCl reactions in the plasma and the incorporation of Cl in the deposit is shown.
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    Plasma oxidation of liquids (1984)
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    Plasma chemistry and plasma processing 4 (1984), S. 285-295 
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    ISSN: 1572-8986
    Keywords: Plasma oxidation ; liquids ; organic materials
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Liquid 2,2,4-trimethylpentane (I), 1-octene (II), and di-n-butylsulfide (III) were subjected to plasma of oxygen. II and III were also treated dissolved in alkanes. Conversion rates increased with decreasing temperature, with increasing gas velocity, and, in the case of II, also with the addition of nitrogen or helium to the gas stream. The selectivity of product formation is far superior to plasma oxidations in the gas phase, making these techniques attractive for preparative chemistry.
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    Effect of manganese on the thermal degradation of hydrocellulose fibres (1982)
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    Fibre chemistry 13 (1982), S. 317-319 
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    ISSN: 1573-8493
    Source: Springer Online Journal Archives 1860-2000
    Topics: Technology , Process Engineering, Biotechnology, Nutrition Technology
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    URL: http://dx.doi.org/10.1007/BF00548228
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    Kinetics of the impregnation of carbon fibres with melts of thermoplastics (1982)
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    Fibre chemistry 13 (1982), S. 319-322 
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    Source: Springer Online Journal Archives 1860-2000
    Topics: Technology , Process Engineering, Biotechnology, Nutrition Technology
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    URL: http://dx.doi.org/10.1007/BF00548229
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    Preparation of a high-modulus fibre using amiprin B-8 modifier (1982)
    Springer
    Fibre chemistry 13 (1982), S. 323-323 
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    ISSN: 1573-8493
    Source: Springer Online Journal Archives 1860-2000
    Topics: Technology , Process Engineering, Biotechnology, Nutrition Technology
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    URL: http://dx.doi.org/10.1007/BF00548230
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    Effect of a polymeric additive on the fluidity of sulfuric acid solutions of high-viscosity aromatic polymers (1982)
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    Fibre chemistry 13 (1982), S. 324-325 
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    Source: Springer Online Journal Archives 1860-2000
    Topics: Technology , Process Engineering, Biotechnology, Nutrition Technology
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    URL: http://dx.doi.org/10.1007/BF00548231
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    Ripening of low-substitution cellulose xanthate solutions (1982)
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    Fibre chemistry 13 (1982), S. 327-328 
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    ISSN: 1573-8493
    Source: Springer Online Journal Archives 1860-2000
    Topics: Technology , Process Engineering, Biotechnology, Nutrition Technology
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    URL: http://dx.doi.org/10.1007/BF00548233
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    Effect of sodium carbonate on the ability of cellulose to undergo viscose formation (1982)
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    Fibre chemistry 13 (1982), S. 326-327 
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    ISSN: 1573-8493
    Source: Springer Online Journal Archives 1860-2000
    Topics: Technology , Process Engineering, Biotechnology, Nutrition Technology
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    URL: http://dx.doi.org/10.1007/BF00548232
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    Distribution of relaxation states in fibre spun by the wet method (1982)
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    Fibre chemistry 13 (1982), S. 329-332 
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    ISSN: 1573-8493
    Source: Springer Online Journal Archives 1860-2000
    Topics: Technology , Process Engineering, Biotechnology, Nutrition Technology
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    URL: http://dx.doi.org/10.1007/BF00548234
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    Effect of textile-auxiliary substances on the resistance of polyester fibres to thermal oxidation (1982)
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    Fibre chemistry 13 (1982), S. 333-335 
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    Source: Springer Online Journal Archives 1860-2000
    Topics: Technology , Process Engineering, Biotechnology, Nutrition Technology
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    URL: http://dx.doi.org/10.1007/BF00548235
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    Textile-auxiliary substances from cottonseed oil soapstock (1982)
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    Fibre chemistry 13 (1982), S. 336-338 
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    Source: Springer Online Journal Archives 1860-2000
    Topics: Technology , Process Engineering, Biotechnology, Nutrition Technology
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    Physicomechanical properties of modified polypropylene fibre (1982)
    Springer
    Fibre chemistry 13 (1982), S. 338-340 
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    Source: Springer Online Journal Archives 1860-2000
    Topics: Technology , Process Engineering, Biotechnology, Nutrition Technology
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    URL: http://dx.doi.org/10.1007/BF00548237
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    Sulfonic acid fibres prepared by modification of khlorin (1982)
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    Fibre chemistry 13 (1982), S. 340-342 
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    Source: Springer Online Journal Archives 1860-2000
    Topics: Technology , Process Engineering, Biotechnology, Nutrition Technology
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    URL: http://dx.doi.org/10.1007/BF00548238
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