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  • Articles  (7,632)
  • Chemistry  (7,542)
  • 66.30  (41)
  • 72.20  (30)
  • 73.60  (23)
  • 1985-1989  (6,544)
  • 1950-1954  (1,088)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (7,632)
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  • Articles  (7,632)
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  • 1
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion of Au in dislocation-free or plastically deformed Si (1011 to 1013 dislocations/m2) was measured with the aid of the spreading-resistance technique. The Au profiles produced indislocation-free Si slices by in-diffusion from both surfaces possess nonerfc-type U shapes as predicted by the so-called kick-out diffusion model. This model is used to calculate the contribution of self-interstitials to the (uncorrelated) Si self-diffusion coefficient,D I SD =0.064×exp(−4.80 eV/kT)m2 s−1, from the present and previous data on the diffusivity and solubility of Au in Si in the temperature range 1073–1473 K. Inhighly dislocated Si the diffusion of Au is considerably faster than in dislocation-free Si. From the erfc-type penetration profiles found in this case, effective Au diffusion coefficients were deduced and combined with data on the solubility of Au in Si. ThusC i eq D i=0.0064 ×exp(−3.93 eV/kT)m2 s−1 was obtained in the temperature range 1180–1427 K, whereC i eq andD i are the solubility and diffusivity of interstitial Au in Si.
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  • 2
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    Applied physics 41 (1986), S. 137-143 
    ISSN: 1432-0630
    Keywords: 68.20 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The decay of periodic surface profiles by surface self-diffusion is simulated by numerically solving the phenomenological equations for this process. The crystalline nature of the surface is taken into account by introducing an anisotropic surface free energy,γ(θ). Depending on the degree of anisotropy ofγ(θ), the decay kinetics and the shapes of the profiles are largely different. A comparison with measurements of profile decay on Pt(l10) single crystal surfaces shows that the anisotropy inγ(θ) along the [1¯10] azimuth should be about 2–3%, while that along the [001] azimuth is expected near 8%. In the latter case large amplitude profiles exhibit (111) faceting and slow decay kinetics which are non-exponential. The rate of surface self-diffusion on Pt(110) is anisotropic with the [1¯10] direction being faster than the [001] direction.
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  • 3
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    Applied physics 41 (1986), S. 171-174 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Markers of Nb, Ru, Ag, In, Sb, Hf, Pt, Au, and Bi in Cu were mixed by irradiation with 750 keV Kr at 77 K and analyzed in situ by backscattering of 1.9 MeV He+. Cu with Pt and Au markers were also irradiated and analyzed at 7 K. The results were identical to those obtained at 77 K results. The measured mixing efficienciesDt/øF D , for the various markers correlate with their respective impurity tracer diffusivities and impurity-vacancy binding energies in Cu. The correlation suggests that diffusion by a vacancy mechanism during a thermal spike as an important process in ion mixing of marker atoms in Cu.
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  • 4
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    Applied physics 42 (1987), S. 193-196 
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this work a Monte-Carlo method of dynamical type is used to simulate the ion-beam mixing of a composite, multilayered target. The calculation refers to a Ni-Ta structure, on a silicon substrate, bombarded with As+ ions and elucidates the effect of the dose and of the target structure on the intermixing of the target constituents.
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  • 5
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    Applied physics 43 (1987), S. 205-208 
    ISSN: 1432-0630
    Keywords: 72.40 ; 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms by an appropriate diffusion condition has been investigated. The transient negative photoconductivity could be observed with a diode doped with gold atoms under intrinsic light-pulse illumination. In the recovery process of the transient negative photoconductivity to a steady-state dark level, two kind of time constants were observed, which may be related with the emission of electrons from gold level. A dependence of the magnitude of the peak value on the ambient temperature was observed; a qualitative explanation is given.
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  • 6
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    Applied physics 37 (1985), S. 165-170 
    ISSN: 1432-0630
    Keywords: 71 ; 72.20 ; 78
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In thermally stimulated processes the calculation of the transition probability of a trapped charge carrier into an excited state is based on an atomistic model involving multiphonon processes. The displacement of lattice particles from equilibrium positions gives rise to electron-lattice interaction. As a result the temperature dependence is found to be of non-Arrhenius type except in some limiting cases. The difference of the probabilities for non-radiative transitions, as calculated by the quantum mechanical and by semi-classical methods, is discussed. Thermoluminescence proves to be an example for a non-radiative transition controlled phenomenon and the calculated glow curve differs appreciably from one model to the other. As a result the glow curves calculated in the quantum mechanical concept exhibit shapes which are broadened and shifted to lower temperatures, as compared to that calculated in the semi-classical concept. In turn, the activation energy, as determined by the initial rise method or the method of heating rate variation, is found to be much smaller in the quantum mechanical case.
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  • 7
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    Applied physics 37 (1985), S. 243-246 
    ISSN: 1432-0630
    Keywords: 68.20 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new possibility for using vacuum-evaporated CdS thin films in combination with a suitable organic polymer (e.g., polyethylene) in electrophotography is described. The advantages of a multi-layer type sample are discussed in terms of deep bulk trapping of the photogenerated free carriers, injected in the polymer. A formula is derived, which links the initial rate of surface potential decay with the trapping range in unit fieldμ 0τ. Using it and the data for the initial rates of surface potential decay of two samples (a double-layer and a multi-layer one), the trapping range for the vacuum-evaporated polyethylene films is determined.
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  • 8
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    Applied physics 38 (1985), S. 49-56 
    ISSN: 1432-0630
    Keywords: 66.30 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin layers of GaAs are heavily doped locally by laser induced Se or Zn diffusion. H2Se or diethylzinc gases are used to provide Se or Zn dopant atoms. The surface is locally heated with 3 ns light pulses from a Q-switched frequency doubled Nd-YAG laser. The doping process is described in detail. Doping profiles and sheet carrier concentrations are measured as a function of substrate temperature, laser fluence and processing time. Dopant concentrations of more than 1021 cm−3, with a thickness of the doped layer of less than 20 nm can be achieved.
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  • 9
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    Applied physics 39 (1986), S. 59-64 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion-beam mixing was measured in immiscible Cu bilayer systems after Kr irradiation at 6 K and at 295 K. It was observed that for the systems which form miscible liquids but which have limited solid solubility, Cu-Nb and Cu-Bi, mixing occurs at 6 but not at 295 K. For a system which is not miscible in either the solid or liquid state, mixing does not occur at either 6 or 295 K. Mixing was also measured in pure Cu isotope bilayer specimens,63Cu–65Cu, to provide a standard for the other measurements. The results are interpreted on the basis of an atomistic model of ion beam mixing. The model assumes that point defects are created in the initial phases of the cascade evolution, and that these defects migrate during the later ‘thermal spike’ phase.
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  • 10
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    Applied physics 41 (1986), S. 197-199 
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The noise current spectral density in submicrometer samples is computed using the Monte Carlo method. The normalized spectral density is found to decrease with sample length and increase with the field. The high-field noise is like shot noise and increases with current in agreement with experimental results.
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  • 11
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    Applied physics 42 (1987), S. 41-43 
    ISSN: 1432-0630
    Keywords: 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The instability of the electron-hole plasma produced by continuous photoexcitation in short semiconductor structures is investigated theoretically. The applied electric field is considerably disturbed by photogenerated charge carriers. At a sufficiently intensive photogeneration plasma instability occurs. The frequency of current oscillations due to the instability, as shown by numerical simulation for a GaAs structure, is in the range of 1011–1012s−1.
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  • 12
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the Hall coefficients and of the resistivity of MBE-grown Si, doped with P, As, Sb, B, and Ga in the concentration range 1014 to 1020 cm−3, were carried out at 77 K and at 300 K. With the exception of Ga-doped Si, the measured mobilities were close to or higher than those of bulk materials at both temperatures. The Mott metal/non-metal transition has been observed in the present epitaxial materials and the measured values for the critical impurity concentration at which the transition occurs, agree with values reported by other workers for bulk silicon.
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  • 13
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    Applied physics 45 (1988), S. 77-81 
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The thermally induced electrical activation of boron implanted in silicon at fluences ≦1013 cm−2 was studied by the combination of secondary ion mass spectrometry (SIMS) and pulsed capacitance voltage (PCV). After annealing at 900°C for 30 min boron is completely ionized and the contribution of electrically active defects to the electrical profile is negligible. For partly annealed samples (T〈900°C) the degree of electrical activation of boron decreases with increasing boron concentration due to the presence of residual defects. The experimental data can be described qualitatively by the first-order kinetics if the influence of residual crystal defects on the electrical activation is considered.
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  • 14
    ISSN: 1432-0630
    Keywords: 66.30 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon doping into GaAs has been performed with the combination of pulsed XeCl excimer laser (wavelength: 308 nm) and silane gas (SiH4). Sheet resistances and depth profiles of the Si-doped GaAs as the functions of laser fluence, the number of laser pulses and gas pressure have been measured in order to make clear the relation between properties of doped GaAs and irradiation conditions. The secondary ion mass spectroscopy (SIMS) has revealed that the depth of Si in GaAs is limited in such a very shallow region (30–110 nm) that might be controlled easily by irradiation conditions. The efficiency for carrier generation of Si in GaAs with laser fluence is discussed.
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  • 15
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The nonlinearI – V behaviour and threshold switching of the bulk Se-Te-Sn system have been experimentally studied at various temperatures. It is observed that the curves are linear for low voltages and become superlinear at higher voltages. After a certain voltageV th, the current through the material shoots to a very high value and the potential across the material drops to a low value. It is also found that there is a decrease in Vh with increase in percentage of tin and temperature. An attempt is made to explain the nonlinearI – V behaviour and threshold switching on the basis of a microcrystallite model. A study of Se-Te-Sn system reveals that our results are in concurrence with the theoretical predictions.
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  • 16
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    Applied physics 46 (1988), S. 35-38 
    ISSN: 1432-0630
    Keywords: 73.40 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have studied the reaction kinetics of titanium films on large-grained aluminium substrates during furnace annealing in vacuum for temperatures between 450–550°C. Oxygen was profiled by elastic resonance16O(α, α)16O backscattering. A TiAl3 aluminide layer always forms at the Ti/Al interface. In addition, a second TiAl3 layer grows at the free Ti surface when the contamination of the annealing ambient by oxygen-carrying species is reduced during annealing. Otherwise, the nucleation of the second compound layer is inhibited by an oxygen-rich surface layer of the Ti.
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  • 17
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    Applied physics 47 (1988), S. 309-311 
    ISSN: 1432-0630
    Keywords: 72.80 E ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract It is shown for the first time that deuterium can diffuse into GaAs from a gaseous source. Experiments performed at 500° C show two-component diffusion profiles with diffusion coefficients in the range 10−15−4×10-1cm2s−1 depending on the conductivity type of the samples. These diffusion coefficients are considerably lower than those determined after RF plasma hydrogenation. Such a slow diffusion process is related to the reaction of molecular deuterium with the sample surface leading to the dissociation of the deuterium molecules.
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  • 18
    ISSN: 1432-0630
    Keywords: 61.40 ; 73.60 ; 78.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A series of experimental studies has been made on the relationship between optical and structural properties of hydrogenated amorphous silicon (a-Si:H) prepared under various conditions. It has been clarified by analysing the results that the shape of the energy spectrum near the band edge and the distribution of the valence-band tail states depend primarily on the structural disorder of the Si network in a-Si:H. On the other hand, the total content and the bonding mode of bonded hydrogen have little effects on these electronic properties of a-Si:H. It has also been found that the distribution of the valenceband tail states might be related to other unidentified factor(s) besides the structural disorder. The present results have been compared with those of the previous experimental and theoretical studies.
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  • 19
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    Applied physics 49 (1989), S. 65-68 
    ISSN: 1432-0630
    Keywords: 66.30 ; 76.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The relaxation timesT 1,T 1q,T 1D, andT 2 for1H in the tetragonal-A phase of HxWO3 have been measured over the temperature range 190 to 490 K. The1H relaxation behaviour appears to be governed by diffusion over inequivalent jump distances, approximating to a short range planar diffusion and a long range isotropic diffusion. Parameters for the latter motion are estimated asE a = 68 kJ/mol andτ 0=2.5×10−13 s. The powder X-ray diffraction pattern for this phase of HxWO3 has been studied over the temperature range 300–470 K. The tetragonal distortion diminishes with temperature and H0.43 WO3 becomes cubic at about 435 K. Volumetric studies of hydrogen evolution show that decomposition accelerates at approximately this temperature.
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  • 20
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    Applied physics 49 (1989), S. 425-429 
    ISSN: 1432-0630
    Keywords: 61.40 ; 66.30 ; 72.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The physico-chemical and electrochemical properties of a new class of polymer electrolytes formed by complexes of poly(ethylene oxide) and copper trifluorosulphonate salts have been investigated. The results suggest that these electrolytes are good copper ion conductors. Under particular conditions of concentration and temperature, and apparent electronic transport has also been evidenced.
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  • 21
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    Applied physics 37 (1985), S. 1-17 
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The paper consists of three parts. In the first part we review the basic experimental and theoretical results which shaped our present knowledge on point defects and diffusion processes in silicon. These results concern on one side oxidation effects which established that silicon self-interstitials and vacancies coexist in silicon and on the other side diffusion of gold into dislocation-free silicon which allowed to determine the self-interstitial contribution to silicon self-diffusion and to estimate the corresponding vacancy contribution. In the second part we discuss topics for which an understanding is just emerging within the framework of coexisting self-interstitials and vacancies: reaching of local dynamical equilibrium between self-interstitials and vacancies; rough estimates of the thermal equilibrium concentrations of self-interstitials and vacancies and their respective diffusivities, and finally, various possibilities to generate an undersaturation of self-interstitials. In the third part we examine swirl defect formation in silicon in terms of vacancies and self-interstitials.
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  • 22
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    Applied physics 37 (1985), S. 153-164 
    ISSN: 1432-0630
    Keywords: 86.30 ; 72.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have made theoretical studies on the trapping and recombination of photogenerated carriers in hydrogenated amorphous silicon (a-Si∶H) p-i-n solar cells. We discuss in detail the following points: 1) The limitations of the assumptions in the previous analysis. It has been clarified that the single-level Shockley-Read-Hall model for carrier recombination and the treatment of trap occupation in terms of quasi-Fermi levels are inadequate for exact analysis. 2) The superlinear dependence of carrier recombination rate on the free-carrier density which can explain the enhancement of photo-induced changes ina-Si∶H under high intensity light. 3) The estimation of capture cross section of the tail states ina-Si∶H. We show that the charged and neutral tail states have rather small capture cross sections of less than 10−16 cm2 and of less than 10−19 cm2, respectively. 4) The effect of the recombination of photogenerated (PG) carriers at the p/i and the n/i interfaces. We estimate the recombination velocityS of PG carriers at these interfaces to be about 103 cm/s. It has been also clarified that the decrease inS is effective to improve the cell performance, especially the open circuit voltage.
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  • 23
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    Applied physics 38 (1985), S. 57-58 
    ISSN: 1432-0630
    Keywords: 72 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The Monte Carlo method has been applied to obtain the average electron velocity at different positions of a submicrometer GaAs channel in the presence of a position independent electric field. Velocity-distance curves are presented for channel lengths of 0.1, 0.2, and 0.5 μm and for lattice temperatures of 300 and 77 K. The curves show significant effects of collisions and boundary conditions.
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  • 24
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    Applied physics 38 (1985), S. 139-143 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion beam mixing of Au markers in Cu samples was measured after 500-keV Kr irradiation at 6, 80, and 295 K. Additional measurements were performed on samples irradiated at 80 K with 1.8-MeV Kr and 295 K with 1.7-MeV Kr. It was observed that the mixing is the same at 6 K as at 80 K but that it is somewhat greater at 295 K. It was also found that at both 80 and 295 K the mixing is the same for 500-keV as for 1.7 MeV projectile energies if the irradiations are compared on the basis of deposited damage energy. Another set of mixing measurements were performed on Ni and Ti markers in Hf and Hf markers in Ni at 6, 80, and 295 K. Although Ni is known to be a fast thermal diffusing atom in Hf, only a 50% difference in ion beam mixing was observed for the Ni and Ti markers at 6 or 80 K. For these marker systems, the mixing was also approximately the same at 6 and 80 K. At 295 K, the mixing remained constant for the Ti marker, increased slightly for the Hf marker in Ni, but decreased strongly for the Ni marker in Hf. The results for both sets of measurements are interpreted according to a qualitative picture of the development of displacement cascades obtained from molecular dynamics computer simulations.
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  • 25
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    Applied physics 41 (1986), S. 107-114 
    ISSN: 1432-0630
    Keywords: 71.55 ; 66.30 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Trap centers in the Si-SiO2 interface region of MOS structures doped by ion implantation of gold have been investigated using constant capacitance deep level transient spectroscopy (CC-DLTS). Gold doses of 1012−3 × 1013 cm−2 were implanted into the back surface of the wafers and were then redistributed during a diffusion anneal for 30 min at 1100° or 900° C. Three Au-related trap levels have been observed in the interface region, which were attributed to the Au-donor (E v +0.35 eV), the Au-acceptor (E v +0.53 eV), and the Au-Fe complex (E v +0.45 eV). The trap concentration profiles show that the Si-SiO2 interface affects the Au concentration in a depth range of 1 μm from the interface and that gettering of Au occurs at the interface. The interface state density is independent of the Au concentration at the interface even for concentrations of 1015 cm−3.
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  • 26
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    Applied physics 41 (1986), S. 127-135 
    ISSN: 1432-0630
    Keywords: 61.80 ; 72.15 ; 73.60
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Atomic mixing of Fe/Al bilayered samples induced by an energetic xenon beam has been studied by RBS-TEM and sheet resistivity measurements. Mixing is detected at 2.5 × 1015 Xe/cm2 and then proceeds up to 2 × 1016 Xe/cm2. A blocking effect of the mixing for larger doses is observed. Homogeneous concentration is not obtained across the sample. Instead a pronounced graded composition is reached. Several explanations of the mixing process and the subsequent blocking effect are suggested: — sharp gradients in the nuclear energy deposition profile which decrease with dose — grain growth phenomena — precipitation of crystalline xenon acting as efficient annihilation sinks for vacancies.
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  • 27
    ISSN: 1432-0630
    Keywords: 73.60
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The resistivity increase of very thin metal films during gas adsorption is stronger than predicted by the commond −1 law. This effect is contributed to surface roughness. A quantitative theory is presented which leads to an additionald −3 term. The theory is checked using literature data obtained for the Ag/O2 system.
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  • 28
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    Applied physics 44 (1987), S. 123-130 
    ISSN: 1432-0630
    Keywords: 72.20 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photopyroelectric spectroscopy (P2ES) of n-CdS single crystals was performed at an open circuit, and in conjunction with photocurrent spectroscopy (PCS) in the presence of an applied ac or dc transverse field. The results showed that P2ES is very sensitive to the presence of deliberately introduced subbandgap defect structures, with the P2E signal dominated by non-radiative de-excitation mechanisms at defect centers. The potential of this technique as a powerful electronic defect diagnostic tool, combined with the overall experimental simplicity, was demonstrated with mm-thick crystals used as received in an open-cell geometry.
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  • 29
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    Applied physics 43 (1987), S. 93-95 
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 41
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Non-uniform planar resistors are modelled by a small stochastic conductivity pattern superimposed on the constant mean conductivity. At first a theoretical analysis is presented giving the mean square deviation of the resistor current for a given applied voltage. The same problem is then simulated by Monte-Carlo experiments and a good agreement is observed.
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  • 30
    ISSN: 1432-0630
    Keywords: 68.55 ; 68.65 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
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    Notes: Abstract In addition to the realization of atomically abrupt interfaces in III–V semiconductors by molecular beam epitaxy, the confinement of donor and acceptor impurities to an atomic plane normal to the crystal growth direction, calledδ-doping, is important for the fabrication of artifically layered semiconductor structures. The implementation ofδ-function-like doping profiles by using Si donors and Be acceptors generates V-shaped potential wells in GaAs and AlxGa1−xAs with a quasi-two-dimensional (2D) electron (or hole) gas. In this review we define three areas of fundamental and device aspects associated withδ-doping. (i) The prototype structure ofδ-doping formed by a single atomic plane of Si donors in GaAs allows to study the 2D electron gas by magnetotransport and tunneling experiments, to study the metal-insulator transition, and to study central-cell and multivalley effects. In addition, non-alloyed ohmic contacts to GaAs and GaAs field-effect transistors (δ-FETs) with a buried 2D channel of high carrier density can be fabricated fromδ-doped material. (ii) GaAs sawtooth doping superlattices, consisting of a periodic sequence of alternating n- and p-typeδ-doping layers equally spaced by undoped regions, emit light of high intensity at wavelengths of 0.9 〈λ 〈1.2 [μm], which is attractive for application in photonic devices. The observed carrier transport normal to the layers due to tunneling indicates the feasibility of this superlattice as effective-mass filter. (iii) The confinement of donors (or acceptors) to an atomic (001) plane in selectively doped AlxGa1−xAs/GaAs heterostructures leads to very high mobilities, to high 2D carrier densities, and to a reduction of the undesired persistent photo-conductivity. Theseδ-doped heterostructures are thus important for application in transistors with improved current driving capabilities.
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  • 31
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    Applied physics 46 (1988), S. 249-253 
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 77.55
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    Notes: Abstract The low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation has been studied. Two fabrication methods are presented. One is photo-enhanced direct nitridation of a silicon surface with NH3 for very thin gate insulators, and the other is photo-enhanced deposition of silicon nitride films with Si2H6 and NH3 gases for stable passivation films. The ArF excimer laser irradiation dissociates the NH3 gas producing NH and NH2 radicals which proved effective in instigating the nitridation reaction. The quality of both films has been much improved and the growth temperature has been lowered by using laser irradiation. These photo-enhanced processes seem to be promising ULSI techniques because they do not depend on high temperatures and are free from possible reactor contamination.
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  • 32
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    Applied physics 47 (1988), S. 399-407 
    ISSN: 1432-0630
    Keywords: 82.65J ; 66.30
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    Notes: Abstract Recombination reactions of adsorbed particles on fractal and multifractal media are discussed within the framework of the random walk arguments. Theoretical results, which predict anomalous reaction orderX〉2 in the low coverage regime, are checked by means of Monte Carlo simulations on two-dimensional structures and good agreement is found. Thermal desorption experiments on rough surfaces are simulated by studying temperature programmed reactions on fractal percolating clusters. For this case the simulations giveX≅2.5, i. e. the fractal reaction order is greater than the classical one (X=2). The influence of chemisorbed impurities (poison) on the recombination reaction is also studied and the reaction order is found to increase beyondX=2.5 when increasing the concentration of poison. Isothermal (recombination) desorption from energetically heterogeneous surfaces is simulated on two-dimensional substrata with multifractal distributions of activation energy of diffusion. For this caseX (withX〉2) depends on the energetic heterogeneity of the substrata (X=2 for an homogeneous substratum). The obtained results point out that the fractal chemical kinetic behaviour is not only restricted to the low concentration regime, but it also covers the medium coverage regime, i.e. it holds for a monolayer surface coverageθ≦0.4 in fractal percolating clusters.
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  • 33
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
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    Notes: Abstract In- and out-diffusion experiments of oxygen in silicon indicate the existence of an oxygen-containing species diffusing much faster than interstitial oxygen at temperatures below about 700°C. The formation of oxygen-related thermal donors in the temperature range around 450°C also requires a fast diffusing species. The paper examines the possibility of this fast diffusing species beingmolecular oxygen, as had been suggested earlier. Special emphasis will be placed on experimental results which have become available since that time. These results allow one to relate thermal donor formation to the loss of interstitial oxygen and to oxygen precipitation. The role of carbon is also considered in this context.
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  • 34
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    Applied physics 48 (1989), S. 245-249 
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    Keywords: 72.20
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    Notes: Abstract Semiconductor response to ultrafast electric pulses was investigated both theoretically and experimentally. The possibilities for hot-electron drift velocity estimation from a pulsed electric conductivity measurement were analysed. An optoelectronic arrangement with time resolution of 20 ps was used to perform such measurements on then-InSb andn-InAs single crystals. Negative differential mobility (n.d.m.) was observed in both semiconductors at high electric fields.
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  • 35
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    Applied physics 49 (1989), S. 75-82 
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    Keywords: 66.30 ; 72.60 ; 85.80
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    Notes: Abstract The electrical conductivity of resistive oxygen sensors based on semiconducting titanates (BaTiO3, SrTiO3) is determined by the amount and the ratio of the different concentrations of atomic defects in the sensor material. At sufficiently high temperatures the sensor exchanges oxygen with the surrounding gas atmosphere resulting in variations of the concentration of defects. The kinetics of these oxygen exchange processes are determined by the diffusion of the defects in the solid. In this paper the diffusion coefficients of the defects, which are decisive for the electrical conductivity, are determined by measurement of the conductivity during the diffusion processes. The evaluation of these results by an analytical model which considers the interaction between all simultaneously diffusing types of defects, allows a survey of the effects influencing the diffusion rate. With this knowledge, it is possible to estimate the influence of grain boundaries, acceptors, temperature and oxygen pressure on the response time of the sensor.
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  • 36
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    Applied physics 49 (1989), S. 165-169 
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    Keywords: 72.20 ; 72.40 ; 73.60
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    Notes: Abstract This paper is concerned with the optimization of growth conditions for a-Si1-x Ge x :H alloys. It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes. It is further shown that the beneficial effects of H-dilution are most pronounced in alloys with comparable densities of Si and Ge.
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  • 37
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.40 ; 72.80J ; 77.40
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    Notes: Abstract ac measurements (1 Hz–10 kHz) have been carried out on a Pb2CrO5 ceramic sample (with surface electrodes) at room temperature as a function of voltage and intensity of visible light illuminating the sample. Cole-Cole complex impedance plots show that the electrical behaviour of Pb2CrO5 is strongly modified when the sample is illuminated. The bulk conductance of the sample is found to increase with increasing light intensity indicating that this dielectric material becomes semiconducting due to the photogeneration of free charge carriers in the conduction band. The dielectric constant of the sample is enhanced by illumination probably due to light-dependent space charge effects in a manner where the dielectric's relaxation time (τ=RC=0.7 ms) remains constant with light intensity. On the other hand, both the bulk conductance and geometrical capacitance of the sample have been found to be almost independent of the applied voltage.
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  • 38
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    Applied physics 36 (1985), S. 183-187 
    ISSN: 1432-0630
    Keywords: 02 ; 72.20 ; 72.70
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    Notes: Abstract General formulae are derived to calculate the noise generated by a resistor of arbitrary shape. Contact and bulk noise have been taken into account. By calculating a particular example it will be shown that the influence of the contact and bulk noise can be changed by varying the resistor's shape.
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  • 39
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    Applied physics 42 (1987), S. 19-33 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30 ; 79.20N
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    Notes: Abstract A titanium-layer of approximately 90 nm thickness has been homogeneously loaded with deuterium by implantation and diffusion. Desorption was studied by use of28Si ions of up to 20 MeV energy (and other ions). The spectrum of the elastic-recoil-detection method serves as indication of the released and retained amount of deuterium. The retained deuterium is recorded as a function of the employed ion dose and is converted into a desorption rate as a function of the retained deuterium concentration. — A one-dimensional theory considering transitions from vacuum to surface and surface to Ti volume (and back) leads to a system of equations, the solutions of which allow adaptation to the experiment and therefore an evaluation with respect to certain characteristic parameters. — Some of the results might be influenced by the high concentration of C and O impurities.
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  • 40
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    Applied physics 42 (1987), S. 219-226 
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    Keywords: 66.30 ; 68.60 ; 79.20
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    Notes: Abstract Because of its good depth resolution, the Auger electron depth profile analysis allows to investigate diffusion phenomena in thin films directly. Complicated calibration procedures, however, are needed to correct for the matrix effects inherent in the Auger method, particularly artefacts due to the sputtering process. In this paper, two types of thin-film systems are presented in order to determine diffusion coefficients from depth profiles: double-layer and periodic multi-layer film structures. Compared to the double-layer films, the multi-layer structure has the advantage of less stringent requirements on depth resolution and allows to detect smaller diffusion effects. Finally, it is shown how grain boundary and bulk diffusion data can be extracted separately from the composition profiles.
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  • 41
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    Applied physics 43 (1987), S. 47-52 
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    Keywords: 72.20
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    Notes: Abstract Cadmium telluride crystals grown by the Travelling Heater Method (THM) technique have been implanted with hydrogen using protons from 2 keV to 3 MeV. Electrical measurements indicate drastic changes in the concentration of defects, especially in the 0.15–0.20 and 0.45–0.60 eV bands. However, the modification induced by hydrogen depends on the starting material, implantation and annealing conditions. Furthermore, resistivity and carrier lifetime are also strongly affected by this treatment.
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  • 42
    ISSN: 1432-0630
    Keywords: 85.30 ; 86.30 ; 73.60
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    Notes: Abstract The electrical properties and the degradation behavior of hydrogenated amorphous silicon alloys (a-Si1−x A x : H, with A=C, Ge, B, P) in designs of pin, pip, nin, and MOS structures are investigated by measuring the dark and light I(V) characteristics and the spectral response as well as the space-charge-limited current (SCLC), the time of flight (TOF) of carriers and the field effect (FE). These investigations give an overview of our recent work combined with new results emphasizing the physics of the a-Si:H pin solar cells. We discuss the stabilizing influence on the degradation behavior achieved by profiling the i layers of the pin solar cells with P and B. Two kinds of pin solar cells, namely glass/SnO2/p(C)in/metal and glass/metal/pin/ITO, are investigated and an explanation of their different spectral response behavior is given. SCLC measurements lead to the conclusion that trapping is also involved in the degradation mechanism, as is recombination. TOF experiments on a-Si1−x Ge x : H pin diodes indicate that the incorporation of Ge widens the tail-state distribution below the conduction band. FE measurements showed densities of gap states of about 5×l016cm−3eV−1.
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  • 43
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    Keywords: 72.20 ; 72.80J ; 70.90
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    Notes: Abstract An ac impedance method has been used to study the electrical properties of an illuminated HgI2 crystal as a function of temperature [10–350 K] and frequency [1–104 Hz]. The complex impedance plane plots enabled us to determine the bulk resistance of the crystal as a function of temperature. Activation energies of [0.08±0.005 eV] and [0.25 ±0.01eV] are then found; they are attributed to acceptor and donor trapping levels, respectively. At temperatures lower than 230 K, a weak temperature dependence of the bulk resistance is observed. This weak dependence is supposed to be due to photoconductivity.
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  • 44
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    Applied physics 42 (1987), S. 179-192 
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    Keywords: 61.80 ; 66.30 ; 79.20N
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    Notes: Abstract The model used in the first part of this investigation is enlarged to take account of the experimentally found inhibition of desorption by gases from the rest-gas atmosphere of the target chamber. The main parameters that can be found by adaptation of a model set of equations are the rate ratios for transfer of chemisorbed atoms in the surface and back, and of the maximal desorption current densities from the surface into the vacuum for deuterium and foreign gases. The desorption cross sections are discussed in relation to the electronic stopping power of the fast ions.
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  • 45
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    Applied physics 36 (1985), S. 63-65 
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    Keywords: 66 ; 72.20 ; 77.20
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    Notes: Abstract The dielectric properties of titanium-doped magnesium oxide (Ti/MgO) and nickel-doped magnesium oxide (Ni/MgO) single crystals have been measured in the range of temperature from 300 to 450 K at the microwave frequency of 9.31 GHz. For both crystals the dielectric properties are found similar. From the conductivity data, the activation energy in the measured temperature region has been estimated to be 0.15 eV. The values of the temperature dependence (ε′−1)−1(ε′+2)−1 (∂ε′/∂T) p have been calculated. The data confirms the Bosmann and Havinga postulate that, for materials in which the dielectric constant;ε′ is less than 20 the temperature dependence should be positive.
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  • 46
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
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    Notes: Abstract H2S gas has been used during molecular beam epitaxy (MBE) growth of GaAs and Al x Ga1−x As as sulphur vector forn-type doping. Doping efficiencies are less than 10−3 at usual growth temperatures, and are limited by an incorporation competitive surface process, probably 2Ga+H2S→Ga2S+H2. In AlxGa1−x As forx≧0.2 the doping efficiency is further reduced by carrier freeze-out at deep levels. Measured thermal activation energies depend on growth conditions and remain relatively low even up to the direct-indirect bandgap crossover for substrate temperatures in the 585–645
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  • 47
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    Applied physics 46 (1988), S. 255-273 
    ISSN: 1432-0630
    Keywords: 73.60 ; 77.50 ; 81.10
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    Notes: Abstract This paper presents an overview of the single-wafer optical processing techniques for integrated circuit fabrication with an emphasis on their applications to insulator growth. Rapid thermal growth of various thin homogeneous and heterogeneous dielectrics on silicon substrates including silicon dioxide, silicon nitride, nitrided oxides, and composition-tailored insulators will be described and some electronic device applications of the rapidly grown dielectrics will be examined. Multicycle rapid growth processes have been used for dielectric structural engineering and in-situ formation of thin layered insulators. The compositional depth profiles and the electrical characteristics of devices are controlled through the synthesis of an appropriate sequence of the wafer temperature-vs-time profiles and process gas cycles. The ongoing developments and future prospects of single-wafer rapid processing for advanced microelectronics manufacturing will also be discussed.
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  • 48
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    Applied physics 46 (1988), S. 5-8 
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    Keywords: 73.60 ; 85.30
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    Notes: Abstract Measurements of steady-state photoconductivity with respect to light-induced defect generation in amorphous hydrogenated silicon (a-Si: H) show that the power index of the time evolution (long-term observation) of the photodegradation is determined by the exposure temperature and the material.
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  • 49
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    Applied physics 46 (1988), S. 13-16 
    ISSN: 1432-0630
    Keywords: 61.80 ; 64 ; 66.30
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    Notes: Abstract Ion-beam induced atomic mixing of Cu/Au bilayer thin film is studied using combined electrical resistivity measurements and Rutherford Backscattering Spectrometry (RBS). 400 keV Kr+ ion irradiation with fluences ranging from 3.3×1015 to 7.6×1016 ions/cm2 at room temperature have been used. Ion beam mixing lead to a uniformly mixed metal alloy. The formation of Cu/Au solid solutions depends on the initial composition and on the fluence of irradiating ions. For an initial composition of Cu42Au58, a Cu-rich solid solution of composition Cu72Au28 is formed after irradiation with 7.6×1016 ions/cm2. The kinematics of the intermixing process is also studied by in situ electrical resistivity measurements which confirmed the formation of the Cu/Au solid solutions.
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  • 50
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    Applied physics 47 (1988), S. 123-129 
    ISSN: 1432-0630
    Keywords: 81.10 ; 73.60 ; 75.30
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    Notes: Abstract Capacitance-voltage (CV) profiling measurements on delta-doped n-type GaAs reveal extremely narrow peaks with a full-width at half-maximum of 40 Å. Comparison of experimental with self-consistently calculated CV profiles demonstrates that Si impurities are localized on a length scale of a lattice constant in delta-doped GaAs. Diffusion and segregation are of minor importance. The basic theory of CV measurements on quantummechanical systems such as delta-doped semiconductors is developed and presented.
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  • 51
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    Notes: Abstract We have grown by means of Molecular Beam Epitaxy ultrathin (1 to ∼ 10 ML) films of fcc Fe and Co on a Cu(001) surface, thus stabilizing this high temperature phase of bulk Fe and Co at room temperature. All films, including the single monolayers, are ferromagnetic. The Co films are magnetized in plane, independently on the thickness. Fe films thicker than 2 ML are magnetized along the film normal. Up to now, the statistical uncertainty is still too large to conclusively prove an enhancement of the magnetic moment for the thinnest Co films.
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  • 52
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    Applied physics 47 (1988), S. 205-208 
    ISSN: 1432-0630
    Keywords: 74.70 ; 72.20 ; 61.70
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    Notes: Abstract Thermoelectric power (TP) and electrical conductivity (EC) measurements were performed for YEa2Cu3Ox at 1128 K under controlled oxygen partial pressure varying between 50 and 105 Pa. Three regimes are observed for the electrical properties. At low $$p_{{\text{O}}_{\text{2}} } (〈 1.6{\text{ }} \times {\text{ 10}}^{\text{2}} {\text{ }}{\text{Pa}})$$ both TP and EC remain constant with $$p_{{\text{O}}_{\text{2}} } $$ . In the medium range $$(1.6{\text{ }} \times {\text{ 10}}^{\text{2}}〈 p_{{\text{O}}_{\text{2}} }〈 7.6{\text{ }} \times {\text{ 10}}^{\text{3}} {\text{ Pa)}}$$ sharp changes of both electrical parameters occur; TP changes sign from positive above 4×102 Pa to negative below this $$p_{{\text{O}}_{\text{2}} } $$ value. In the high $$p_{{\text{O}}_{\text{2}} } $$ region (〉7.6×103 Pa) TP vs log $$p_{{\text{O}}_{\text{2}} } $$ exhibits two slopes; 5.1 below 1.5×104 Pa and 8.4 above this $$p_{{\text{O}}_{\text{2}} } $$ value. The slopes can be discussed in terms of the defect structure involving singly and doubly ionized oxygen vacancies below and above 7.6×103 Pa, respectively.
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  • 53
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    Notes: Abstract Measurements of the electrical conductivity, thermelectric power and thermal conductivity of an AgTlTe2 semiconductor in the solid and liquid states were carried out in a wide range of temperatures. In the liquid state the data analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors. Positive thermoelectric power suggests a large predominance of holes in electrical transport.
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  • 54
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    Applied physics 48 (1989), S. 549-558 
    ISSN: 1432-0630
    Keywords: 79.60 ; 73.40 ; 73.60 ; 73.60H ; 71.25M ; 81.15 ; 46.30P
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    Notes: Abstract The interface properties of hydrogenated amorphous carbon films (a-C:H) on Si and GaAs substrates have been studied by in-situ photoelectron spectroscopy measurements. The a-C:H films have been deposited by direct ion beam deposition. Distinct differences in the interface formation have been observed during film depositon on the two substrates. The data clearly reveal a decomposition of the GaAs at the interface which can be related to the reduced adhesion of a-C: H on the compound semiconductor substrate.
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  • 55
    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70
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    Notes: Abstract We proposed a model to correlate, in a continuous manner, the composition dependence of electrical properties and the progressive extension of clusterization when the substitution rate increases in a fluoride anion excess CaF2-type solid solution of M1−xM x ′2+α F2+αx(α=1,2,3). A new classification of clusters is given based on the presence or absence of coexistence between two types of interstitial fluoride ions. The second part of the paper is devoted to the representation of the sum of interstitial fluoride ionsn F int and the sum of vacancies in normal sitesn □ according to the general equationy=(mx 3+λqx)/(x 2+q). This model allows us to correlate the structural and electrical properties of a large number of solid solutions with fluorite-type structure.
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    Applied physics 49 (1989), S. 33-40 
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    Keywords: 66.30 ; 81.40 ; 81.60 ; 61.70
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    Notes: Abstract The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of oxides.
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    Applied physics 49 (1989), S. 239-247 
    ISSN: 1432-0630
    Keywords: 61.40 ; 66.30
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    Notes: Abstract That ionic conductivity in glass is a non-exponential process and has been known for many years. The amorphous structure of glass and hence a distribution of cation sites has often been thought to be the cause for the non-exponentiality. Almost completely unresearched, however, has been the effect of glass composition on the nature of the relaxation process. In this paper, we review the observations that have been made of the relationships between glass composition and the non-exponential character of the conductivity relaxation as well combine our recent wide composition range studies of sodium aluminoborate and lithium phosphate glasses to delineate the major features of the correlation. By examining glass compositions ranging from 0.02 to 60 mole% alkalioxide, it is observed that the rapid development of non-exponentiality within 1% Na2O is accompanied by a similar rapid decrease in the average cation-cation separation distance, this being calculated using the composition and density. Other quantities such as the dc conductivity or activation energy are observed to vary too slowly with composition to produce a linear correlation with the extent of non-exponentiality as monitored in theβ parameter of the stretched exponentialkww function.
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    Applied physics 49 (1989), S. 249-257 
    ISSN: 1432-0630
    Keywords: 61.40 ; 61.10 ; 66.30 ; 64.60
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    Notes: Abstract (PEO) n :ZnX 2 (X = I, Br) complexes were formed at room temperature with values ofn ranging from 8 to 30. Differential scanning calorimetry (DSC) results indicate that none of them contained any crystalline phases that can be associated with the formation of a complex (i.e. it can be assumed that all the salt is in the amorphous phase). EXAFS studies carried out on these samples suggest that the zinc cation is co-ordinated to two of the halide ions and, in addition, to 4 oxygen atoms whereX = I and 6 oxygen atoms whereX = Br. The DSC results confirm that the zinc cation is in an environment independent of overall stoichiometry, as the glass transition temperatures of the samples were found to be similar throughout. By comparing these with those of annealed samples (made by heating the above samples to 150°C and cooling to −80°C at 320°C min−1) it was found that the stoichiometry of the amorphous phase was roughly 6∶1 forX=I and 8∶1 forX = Br.
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  • 59
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    Applied physics 49 (1989), S. 431-436 
    ISSN: 1432-0630
    Keywords: 71.55 ; 66.30 ; 73.60
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    Notes: Abstract Recent investigations on transition-metal impurities in silicon emphasizing the effect of the combined diffusion of two transition metals are presented and briefly discussed. The electronic properties and basic thermal kinetics are analysed by DLTS. The conversion of a Pd-related multivalent defect atE c-0.35 eV andE c-0.57 eV to the Pd-related defect atE c −0.22 eV is observed, and a Pd-Fe complex level atE c −0.32 eV is identified. The annealing characteristics of the multivalent Rh levels atE c-0.33 eV andE c-0.57 eV are observed, and used to analyse the influence of prior Rh doping on the Au diffusion. A complex formed by the codiffusion of Au and Cu is observed atE v+0.32eV andE v+0.42 eV, and shown to exhibit bistable behavior as does a similarly produced Au-Ni complex observed atE v + 0.35 eV andE v+0.48 eV.
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  • 60
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    Keywords: 73.60 ; 72.40 ; 78.20
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    Notes: Abstract Amorphous Si1−xCx: H thin films were prepared by the rf magnetron sputtering method using a composite target of silicon and graphite. The dependence of the optical, structural, electrical, and optoelectronic properties on the carbon contentx was investigated, by measuring the optical absorption spectra, ir spectra, dark conductivity, photoconductivity and ESCA spectra. The optical gap was found to be unchanged with increasingx below about 0.6, in spite of the increase in the amount of the SiC bond. This is considered to be due to the formation of the carbon clusters. It is found that the photosensitivity shows a maximum at aboutx = 0.2, and is about one order of magnitude larger than the film withx = 0. This is related to the decrease in the dark conductivity, which is ascribed both to the formation of the SiC bond and to the reorganization of the defect-rich structure of sputter-deposited amorphous Si by the addition of about 20% carbon. The photoconductive effect was gradually lost in the range ofx above 0.6. In this range, the optical gap increases rapidly owing to the rapid increase of the SiC bond.
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  • 61
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    Applied physics 38 (1985), S. 145-149 
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    Keywords: 72.20
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    Notes: Abstract The impact ionization in p-type indium antimonide at 77 K was investigated both experimentally and theoretically. The dc pulse measurements with the time resolution of 50 ps and the high-field Hall measurements produced clear evidence that the impact ionization inp-InSb is initiated by equilibrium holes. The calculated hole generation rate gives good agreement with the experimental results.
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  • 62
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    Applied physics 39 (1986), S. 135-139 
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    Notes: Abstract Coherent current oscillations with frequencies of several hundreds of megahertz and microwave generation at frequencies up to 40 GHz were investigated in then-InSb samples subjected to crossed electric and magnetic fields. They are shown as being caused by electric field redistribution and negative differential mobility in high-field regions.
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  • 63
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    Applied physics 40 (1986), S. 101-107 
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 8
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    Notes: Abstract Phosphorus has a considerably less steep concentration profile than arsenic. Therefore phosphorus is considered as an alternative dopand for soft drain concepts in future MOS devices. In-diffusion of phosphorus starting from a high surface concentration generatesexcess point defects which diffuse into the depth of the crystal and lead to a tail in the phosphorus concentration profile by considerably enhancing the phosphorus diffusion in this region. It is also well known that the interface between silicon and a non growing oxide acts as a sink for excess point defects. Since source/drain areas of MOS transistors are surrounded by gate and isolation oxides, the question arises how the resulting excess point defect distribution may influence the lateral and vertical diffusion profile of phosphorus and hence the channel length and the junction depth of the source/drain region in a MOS device. We extended the one-dimensional Fair-Tsai model of phosphorus diffusion into two dimensions and incorporated that the interface between silicon and a gate oxide acts as a sink for excess point defects and modifies their distribution. The appropriate code was implemented in the two-dimensional process simulation program LADIS. Based on this extended model two-dimensional simulations of phosphorus drains have been performed and compared to experimental results and to results from other numerical models. It turns out that the presence of the gate oxide reduces the tail in the phosphorus concentration profile, considerably in lateral direction and less pronounced in vertical direction. Limitations of the model will be discussed in detail.
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  • 64
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    Applied physics 40 (1986), S. 171-176 
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    Keywords: 73.60 ; 71.20 ; 86.30
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    Notes: Abstract We have reexamined the validity of quasi-static capacitance-voltage (C-V) measurements when applied to hydrogenated amorphous silicon (a-Si: H) diodes. Displacement currents with the application of a linear ramp voltage to an a-Si:H Schottky diode exhibit a slow response with time constants ranging 0.1–1 s which cannot be measured completely by the conventional measurements. The measured capacitance and the effective density of gap states obtained from the measurement depend on the timing of current observation even when the small value of the order of 0.01 V/s is chosen for the ramp rate. We propose a possible means to realize the true quasi-staticC-V measurement of a-Si:H diodes.
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  • 65
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    Applied physics 42 (1987), S. 303-309 
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    Keywords: 72.20 ; 79.20 ; 85.30
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    Notes: Abstract Large signal characterisation of double heterostructure DDR Impatt diode has been carried out in the millimeter-wave range considering the MITATT mode of operation. The structure of the device is p+-p2-p1-n1-n2-n+ where impact ionisation and tunneling takes place in the p1-n1 region. In this study we have considered two well-known heterostructures, e.g., InP/GaInAs/InP and InP/InGaAsP/InP and one nonconventional structure GaAs/InP/GaAs. The theoretical results of the performances of these devices as regards of output power, efficiency, and negative conductance revealed that the structures are quite promising as the source of power in the millimeter-wave range. The analysis may be used for other mm wave DDR heterostructure Impatts.
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  • 66
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    Applied physics 43 (1987), S. 29-35 
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    Keywords: 71 ; 72.20 ; 78
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    Notes: Abstract The pre-exponential factor of the transition probability of a trapped charge carrier into an excited state is evaluated from two different approaches. The semi-classical treatment based on a thermodynamical concept involves the calculation of the vibrational entropy change from the partition sum. The quantum-mechanical treatment deals with non-radiative transitions due to electron-phonon coupling. The factor is found to be explicitely dependent on both the temperature and the lattice vibration frequencies represented by a single Einstein oscillator. In addition, the results from different concepts show similar behaviour. As a consequence the effect of lattice vibrations on the position as well as on the shape of glow peaks in thermally stimulated measurements are investigated on a simple phenomenological base. The analysis of some experimental results can be performed in accordance with the theoretical predictions.
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  • 67
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    Notes: Abstract The real part of the dielectric constant was studied in the temperature range of 340 to 10 K, and at frequencies that range from 1 to 104 Hz. The dipole contribution to the dielectric constant has been found at temperatures lower than 110 K while the space-charge contribution due to the increase of crystal defects is dominant at temperatures higher than 290K.
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  • 68
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    Applied physics 43 (1987), S. 139-141 
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    Keywords: 85.40 ; 72.20 ; 76
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    Notes: Abstract A polarized N-O bond behaves as an intramolecular p-n junction. Their rectifying properties have been found in 1,3-dimethylisoxasole, 1-phenylsydnone, and 1-(4-methylphenyl)sydnone molecules based on H1-NMR data.
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  • 69
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    Applied physics 44 (1987), S. 279-284 
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    Keywords: 81.40 ; 72.20
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    Notes: Abstract The behaviour of Xe implanted at the Ni-Si interface and irradiated with Nd-laser pulses is studied in details and compared with Xe implantation into NiSi2 and into pure Si. Ion beam mixing followed by laser irradiation is able to form good quality epitaxial NiSi2 layer on Si. An inward segregation of Xe is observed with retention of Xe at a depth of 30 nm inside pure silicon. Implantation of Xe into NiSi2 or pure Si causes broadening and loss of Xe, as generally observed for implantation into pure materials. The different behaviour of Xe at the Si/NiSi2 interface must thus be ascribed to peculiar characteristics of the interface itself.
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  • 70
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    Applied physics 45 (1988), S. 185-187 
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    Keywords: 61.40 ; 66.30 ; 78
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    Notes: Abstract The influence of thermal treatment on a (Li2O∶Al2O3∶ SiO2) glass ceramic is studied by laser spectroscopy. At temperatures above 800 °C a fluorescence of Cr3+ ions around 693 nm appears which indicates the growth of crystallites where the Cr3+ ions occupy sites similar to those in Al2O3.
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  • 71
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    Notes: Abstract The change in electrical resistance with time for bulk, thick-film, and thin-film Ba2YCu3Ox at atmospheric pressure is described as a function of the oxygen partial pressure (100 to 0.001%) and temperature (320°–750°C). The potential usefulness of these materials as oxygen sensors is demonstrated. The rate of equilibration is faster during oxygen uptake than during its loss. Time constants τ to reach equilibration (1/e remaining), qualitatively scale with sample dimensions. For a 1μm film at 600° C,τ 〈1 s for the range of PO2 (O2 being a shorthand for O2) from 100% to 0.001%. The rate increases markedly with increasing PO2. The actual resistance decreases with PO2 at a rate of logρ/log PO2 = 0.4 at 700° C showing adequate sensitivity for sensor purposes. Times for the transient resistance change in the sample where used to estimate the oxygen diffusion coefficient in the ceramic. The diffusivities obtained are 4·10−11−1·10−12 cm2/s in the 435°–320° C range, with an activation energy of ≅27 kcal/mole.
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  • 72
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    Applied physics 44 (1987), S. 347-352 
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    Keywords: 61.80 ; 66.30 ; 61.40
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    Notes: Abstract The stable defects created in most dielectrica by fast heavy ions, called “latent nuclear tracks”, are zones of reduced density. Using the small-angle neutron-scattering technique it is shown that water molecules which permeate a polymer foil are preferentially embedded in these zones. In the track region the diffusion- and the sorption coefficients for various atoms and molecules are larger than in unirradiated material. In the damaged region of tracks produced by uranium ions in Polyethyleneterephtalate (PETP) the permeability for neon, oxygen, argon, carbondioxide, and water is enhanced by factors between 60 and 290. A method for the preferential etching of latent nuclear tracks in PETP using methanol as a solvent is suggested.
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  • 73
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    Applied physics 46 (1988), S. 113-117 
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    Keywords: 72.20
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    Notes: Abstract Switching effects in AgTlSe2 and CuTlSe2 chalcopyrite semiconductors films have been investigated. The threshold switching voltage was found to increase linearly with the thickness, moreoverV th increases exponentially with the temperature. The rapid transition between the highly resistive and conductive states was attributed to an electrothermal origin from Joule's heating of a current channel.
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  • 74
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    Applied physics 46 (1988), S. 159-163 
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    Keywords: 66.30
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    Notes: Abstract Diffusion of selenium and tellurium in silicon has been investigated in the temperature range 1000°C to 1310°C by sheet conductivity. For Si∶SeD 0= 0.3±0.1 cm2/s andh=2.6±0.1 eV, and for Si∶TeD 0=0.9±0.3 cm2/s and h=3.3±0.1eV have been obtained. The surface concentrations for both dopants were of the order of 5 × 1013 to 6×1016cm−3. The Hall coefficient leads to an energy level of 300±15meV for selenium and 200±20meV for tellurium.
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  • 75
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    Notes: Abstract Films of a-Si: H have been deposited by means of a dc hot cathode discharge of SiH4 with electrostatic confinement at a pressure as low as 0.4 Pa. The plasma used is quite quiescent as has been observed by means of reproducible Langmuir probe measurements. Substrates have been placed at different locations in between the electrodes, some of them facing the anode and the others facing the cathode. Films deposited on substrates facing the cathode present a granular, non-columnar, structure, an IR spectrum with only SiH absorption peaks, and a very low photoresponse. Films deposited on substrates facing the anode have a similar IR spectrum but are homogeneous, have lower hydrogen content, and present a high photoresponse. The optical absorption coefficientα shows in all samples theαnE=C(E−E0) x behaviour, but with exponentx=3 and notx=2 as is usually considered in a-Si∶H.
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  • 76
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    Applied physics 46 (1988), S. 249-253 
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    Keywords: 68.55 ; 73.60 ; 77.55
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    Notes: Abstract The low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation has been studied. Two fabrication methods are presented. One is photoenhanced direct nitridation of a silicon surface with NH3 for very thin gate insulators, and the other is photo-enhanced deposition of silicon nitride films with Si2H6 and NH3 gases for stable passivation films. The ArF excimer laser irradiation dissociates the NH3 gas producing NH and NH2 radicals which proved effective in instigating the nitridation reaction. The quality of both films has been much improved and the growth temperature has been lowered by using laser irradiation. These photo-enhanced processes seem to be promising ULSI techniques because they do not depend on high temperatures and are free from possible reactor contamination.
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  • 77
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    Applied physics 46 (1988), S. 255-273 
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    Keywords: 73.60 ; 77.50 ; 81.10
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    Notes: Abstract This paper presents an overview of the single-wafer optical processing techniques for integrated circuit fabrication with an emphasis on their applications to insulator growth. Rapid thermal growth of various thin homogeneous and heterogeneous dielectrics on silicon substrates including silicon dioxide, silicon nitride, nitrided oxides, and composition-tailored insulators will be described and some electronic device applications of the rapidly grown dielectrics will be examined. Multicycle rapid growth processes have been used for dielectric structural engineering and in-situ formation of thin layered insulators. The compositional depth profiles and the electrical characteristics of devices are controlled through the synthesis of an appropriate sequence of the wafer temperature-vs-time profiles and process gas cycles. The ongoing developments and future prospects of single-wafer rapid processing for advanced microelectronics manufacturing will also be discussed.
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  • 78
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    Notes: Abstract The nonlinearI–V behaviour and threshold switching of the bulk Se-Te-Sn system have been experimentally studied at various temperatures. It is observed that the curves are linear for low voltages and become superlinear at higher voltages. After a certain voltageV th, the current through the material shoots to a very high value and the potential across the material drops to a low value. It is also found that there is a decrease inV th with increase in percentage of tin and temperature. An attempt is made to explain the nonlinearI–V behaviour and threshold switching on the basis of a microcrystallite model. A study of Se-Te-Sn system reveals that our results are in concurrence with the theoretical predictions.
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    Applied physics 47 (1988), S. 399-407 
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    Keywords: 82.65J ; 66.30
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    Notes: Abstract Recombination reactions of adsorbed particles on fractal and multifractal media are discussed within the framework of the random walk arguments. Theoretical results, which predict anomalous reaction orderX〉2 in the low coverage regime, are checked by means of Monte Carlo simulations on two-dimensional structures and good agreement is found. Thermal desorption experiments on rough surfaces are simulated by studying temperature programmed reactions on fractal percolating clusters. For this case the simulations giveX≅2.5, i. e. the fractal reaction order is greater than the classical one (X=2). The influence of chemisorbed impurities (poison) on the recombination reaction is also studied and the reaction order is found to increase beyondX=2.5 when increasing the concentration of poison. Isothermal (recombination) desorption from energetically heterogeneous surfaces is simulated on two-dimensional substrata with multifractal distributions of activation energy of diffusion. For this caseX (withX〉2) depends on the energetic heterogeneity of the substrata (X=2 for an homogeneous substratum). The obtained results point out that the fractal chemical kinetic behaviour is not only restricted to the low concentration regime, but it also covers the medium coverage regime, i.e. it holds for a monolayer surface coverageθ≦0.4 in fractal percolating clusters.
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    Applied physics 48 (1989), S. 181-188 
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.70 ; 06
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    Notes: Abstract A method for quantitative characterization of chaotic dynamical systems is discussed. An electronic instrument for determining the number of independent variablesk *, involved in the motion, is described. It allows one to obtain these in real time from a single observable. The suggested technique has been applied to quantification of strange attractors underlying chaotic instabilities in semi-insulating GaAs∶Cr, and n-Ge, irradiated with high energy electrons. In n-Ge, for instance, the measured numbersk * range from 2 to 4 depending on control parameters. These measurements reveal the highly deterministic nature of the observed chaotic oscillations. The physical mechanisms responsible for the current instabilities and chaotic behaviour are discussed.
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  • 81
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    Notes: Abstract Non-oxide chalcogenide glasses based on more than one network former species have certain advantages for applications as solid electrolytes in batteries. To elucidate the influence of competitive glass-formation on the structural and motional properties of ionically conductive chalcogenide glasses, the system (Li2S)0.67[(B2S3)1−y (P2S5) y ]0.33 has been characterized comprehensively by DSC, electrical conductivity and6Li,7Li,31P, and11B solid state NMR techniques. The data obtained provide the first systematic characterization of the coformer effect in a chalcogenide glass system. Homogeneous glassy samples are formed fory=0.3 and 0.9≦y≦1.0, and microphase separated glasses for 0≦y≦0.2. The presence of a coformer leads to an increase in the electrical conductivity and a decrease of the activation energy, as compared to either binary system (Li2S-B2S3 or Li2S-P2S5), but only if homogeneous glasses are formed. The NMR data, in conjunction with systematic DSC and NMR studies of the binary systems (Li2S)x(B2S3)1−x (0.50≦x≦0.75) and (Li2S) x (P2S5)1−x (0.50≦x≦0.70), lead to the following conclusions: 1)11B MAS-NMR is well-suited to quantitate the amounts of three- and four coordinated boron atoms; in the binary glasses, the fraction of four-fold boron (N4) increases with decreasing Li2S/B2S3 ratio; in the ternary glasses N4 increases with increasingy. 2)31P MAS-NMR spectra of the binary glasses discriminate between three different phosphorus microenvironments, assigned to sulfide-analogs of metaphosphate, pyrophosphate, and orthophosphate species, respectively. These results suggest the applicability of network modification models originally developed for oxide glasses. For the ternary glasses, the DSC and NMR data of glasses with low phosphorus contents are consistent with a phase separation model involving a Li-rich thioborate glass that contains all of the phosphorus component and a glass phase less rich in lithium containing the four-fold boron atoms. In addition to the structural studies, the7Li spin-spin relaxation times (T 2) are used to characterize the mobility of the Li atoms. The activation energy of Li motion, determined from temperature dependentT 2 measurements and analyzed by using BPP theory differs from that determined from conductivity measurements by a factor of 2–3, possibly reflecting the inapplicability of this theory to the lithium diffusion process.
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    Applied physics 49 (1989), S. 413-424 
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    Notes: Abstract We review investigations of Cd1−xPbxF2 superionic properties and show examples of applications of these crystals. Results of a study of thermodynamic, electrical and Raman-scattering properties of Cd1−xPbxF2 crystals are presented. These crystals can be used to construct reversible electrochemical cells.
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    Applied physics 49 (1989), S. 61-64 
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    Keywords: 66.30 ; 63.10
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    Notes: Abstract A non-local theory of hopping conduction is developed on the basis of the relaxation mode theory. An application of this theory to the ultrasonic attenuation is made, in which the attenuation by particles hopping on a doubly periodic lattice is investigated in the presence of the piezoelectric coupling. It turns out that in case of particle-hopping on a lattice with equivalent sites, the attenuation formula of Hutson and White can be reproduced when the lowest order approximation inq, the wave number, is taken into account.
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  • 84
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    Notes: Abstract Carbon doping of GaAs using a KrF excimer laser to form a p-type active layer is described. Methane gas (CH4) was used as a source of the C acceptor. Various quantities such as sheet resistance, surface carrier density, Hall mobility, and depth profile of C-doped GaAs are measured as the functions of laser fluence and laser pulse. It is shown that C atoms are doped only within a limited depth as shallow as 50 nm or less and with extremely high concentration exceeding 1×1021 cm−3. The maximum activation efficiency is found to be 69.0%. Laser induced changes of surface morphologies and electron diffraction patterns are also discussed. Furthermore, non-alloyed ohmic contacts using laser-doped p-type GaAs are demonstrated.
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    Applied physics 49 (1989), S. 25-31 
    ISSN: 1432-0630
    Keywords: 81.20 ; 66.30 ; 72.60 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Zirconia-titania-yttria oxide solutions are novel mixed-electrical conductors in which both oxygen-ions and electrons are mobile. A determination of their electrical properties is necessary for an evaluation of their potential applications. Single-phase oxide solutions have been prepared and characterized. Phase studies indicates extensive solid solution of titania into zirconia stabilized with 12 mol % yttria. The observed decrease in lattice parameter with increasing titania concentration in these oxide solutions indicates that titanium cations substitute for the zirconium cations in the fluorite lattice. The lattice and grain-boundary electrical conductivities have been determined using impedance spectroscopy at temperatures between 400 and 950 °C.
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  • 86
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    Applied physics 49 (1989), S. 55-60 
    ISSN: 1432-0630
    Keywords: 66.30 ; 61.10 ; 64.60 ; 82.45
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Polymer solid electrolytes from a PEO-NaI system were mixed with Nasicon and Al2O3 powders. As a result an increase of ionic conductivity exceeding 10−1 S/cm at room temperature was observed for both cases. This increase was due to a higher concentration of amorphous phase which resulted apparently from a higher nucleation rate during the solidification process. The samples were studied using impedance spectroscopy, X-ray diffraction, electron microscopy, NMR, and other techniques.
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  • 87
    ISSN: 1432-0630
    Keywords: 77.40 ; 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The fluorides of the rutile structure are relatively simple ionic materials with tetragonal symmetry for which the dominant intrinsic defect has not been established. The present experiments involve low-temperature dielectric relaxation measurements on Er3+-and Y3+-doped MnF2 single crystals. Unexpectedly, dielectric loss peaks were observed at cryogenic temperatures, involving very low activation energies,E. For both dopants a prominent peak is observed for samples oriented parallel to thec-axis withE ∼ 6 meV and in perpendicular orientations withE=37 meV for Er3+ and 46 meV for Y3+ doping. Such lowE-values are probably too small to be controlled by lattice migration of a defect. Rather, we expect that they are due to a very low symmetry configuration created when the ions near the defect move “off symmetry” to a more stable configuration. Computer simulation calculations have been carried out which are much improved over early studies of this system in terms of the code used and the F-F interatomic potentials. The results show that the energy per defect for the anion Frenkel (1.53 eV) is lower than that of the Schottky (1.99 eV). It was also shown that the fluorine interstitial, Fi, adopts a split-interstitial form. This defect associates strongly with trivalent dopants Er and Y to produce a low symmetry dipolar structure with the necessary off-symmetry configuration to explain the experimental findings. Since there is no alternative way to explain these low temperature relaxations in terms of impurities associated with Mn vacancies, as would be required by the Schottky model, we conclude that these experiments serve to establish the nature of the intrinsic defect in MnF2 as anion Frenkel.
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  • 88
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    Applied physics 49 (1989), S. 117-121 
    ISSN: 1432-0630
    Keywords: 66.30 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The ac-impedance of compressed powders of the ion conducting zeolites chabazite and 13X has been measured. The porosity of the samples was changed by applying an external pressure. The impedance diagrams were suppressed semicircles. The impedance as well as the suppression angle decreased with increasing relative density. This shows that the particle-particle contact gives a significant contribution to the overall impedance. The frequency dependency of the current constriction at contact points between particles is described by a simplified equivalent network. The analytical expression is analogous to an equation for the impedance of fractal interphases leading to a constant phase angle element in the equivalent diagram.
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  • 89
    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70 ; 82.45
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dc electrical conductivity of rare-earth doped ceria has been measured as a function of temperature (300–600 K) and composition (0.05–15 mol% M2O3) on using the complex impedance technique. Five dopants have been selected, yttrium and the lanthanides Yb, Gd, Nd, and La. For all of them, the variations of the activation energy versus dopant concentration are similar and characterized by the existence of a minimum. This peculiar property can be understood if attractive interactions between immobile dopant ions and mobile oxygen vacancies are taken into account. From an analysis of the experimental results, it is concluded that this interaction extends at least to third or fourth nearest neighbors depending on the size and the electronic configuration of the dopant ion.
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  • 90
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    Applied physics 49 (1989), S. 273-277 
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Metallic superlattices of copper and manganese have been synthesized on glass and mica substrates by a sequential evaporation technique. The electrical resistivity and the temperature coefficient of resistance (TCR) of layered Cu/Mn has been studied for various thicknesses (d) in the range 2–6 nm by varying the number of double layers (n) from 5–35. The transition from a negative to positive TCR has been observed ford 〉5 nm. The thickness dependence of room temperature resistivity (ϱ RT) and TCR shows oscillatory behaviour.
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  • 91
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    Polymer Engineering and Science 28 (1988) 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 92
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    Polymer Engineering and Science 28 (1988), S. 413-420 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: This paper presents the development of the boundary element equations for the compression molding process of isothermal Newtonian fluids. It shows the numerical implementation of the boundary element equations and presents a simple method of carrying out the domain integral present in the governing equations. The results and accuracy of a boundary element simulation are discussed, and the numerical results compared to experimental values.
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  • 93
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    Polymer Engineering and Science 28 (1988), S. 605-609 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The static delamination behavior of graphite/epoxy composite specimens subjected to mode I tensile opening (using UDCBUniform double cantilever beam. specimens), and pure mode II shear loading (using ENFEnd-notched flexural. specimens) were studied. The graphite epoxy composites for the study were made from commercially treated fibers, with and without an electropolymerized interlayer. The mode I fracture energy (GIC) was found to be significantly higher (more than 50 percent) for the coated fibers. However, this improvement was accompanied by a high reduction (more than 3 times) in the mode II fracture energy (GIIC). This effect is apparently related to poor adhesion between the interlayer and the epoxy resin, which may be corrected by use of a “top layer” of appropriate composition to form chemical bonds between the phases. The fracture toughness (KIC) of composites made with commercially treated fibers was also evaluated, using double side-notched specimens.
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  • 94
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    Polymer Engineering and Science 28 (1988), S. 583-591 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: An analytical methodology was developed capable of describing interrelations between thermal processing and polymer structure for thermoplastic based composite laminates. Specifically, this modeling methodology was used to describe experimental results generated with a specially designed match die quench mold by processing both neat PEEK polymer and carbon fiber reinforced laminate samples at different cooling rates. The developed model accurately predicted temperature profiles for PEEK laminates of different thicknesses, under normal as well as extreme quenching conditions of 114°C/s. surface cooling rates that are possible to generate with the quench mold. In general, the modeling methodology is capable of predicting a part's thermal profile during processing in terms of the composite's microscopic intrinsic properties (fiber and matrix), composition, and lamina orientation. Furthermore, by coupling to the thermal profile description, a previously developed crystallization kinetics model for PEEK polymer and its carbon reinforced composite, a quantitative description of structural development during processing was obtained. Thus, with this analytical methodology, a skin-core crystallinity profile, where the crystallinity varies with part-thickness as a result of uneven cooling experienced during processing, was predicted both for the neat PEEK polymer and its carbon reinforced laminate forms. Finally, the developed methodology clearly established the interplay of both microscopic heat transfer and kinetics of crystallization/solidification of the matrix that must be accounted for in predicting the final structure of a carbon fiber reinforced laminate that will, in turn, govern microscopic and macroscopic performance.
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  • 95
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    Polymer Engineering and Science 28 (1988), S. 634-639 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Neat poly(ether-ether-ketone) (PEEK) and carbon fiber reinforced PEEK (APC-2) specimens were prepared using a variety of cooling rates to achieve a range of crystallinities. Amorphous specimens were exposed to a variety of fluids to determine the penetrant types which are able to strongly influence the material. This allowed the estimation of the solubility parameter and hydrogen bonding index for PEEK to be 9.5 and 3.1, respectively. Methylene chloride was used to investigate the kinetics of penetrant sorption. The data demonstrated Case II behavior, with the initial crystallinity having a pronounced effect on both the kinetic and equilibrium data. Accordingly, a model was proposed capable of describing the sorption level and penetration depth as a function of time given the sample crystallinity and sorption temperature. With Case II behavior there was no difference in the sorption kinetics of neat and fiber reinforced PEEK. Finally, the dynamic mechanical properties measured during sorption were found to be dependent on the sorption process.
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  • 96
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    Polymer Engineering and Science 28 (1988), S. 670-678 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The dynamic shear viscosity and the morphology of polypropylene homopolymer and copolymer blended with linear low density polyethylene are studied. A maximum in the dynamic shear viscosity vs. blend composition is reported for the polypropylene copolymer, linear low density polyethylene system. The increasing dynamic shear viscosity is in accordance with the occurrence of a morphology of polyethylene inclusions in rubber surrounded by a polypropylene matrix. Comparing calculations of the dynamic shear viscosities - based on a shell model with interlayer - and experimental results supports this view.
    Additional Material: 17 Ill.
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  • 97
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    Polymer Engineering and Science 28 (1988), S. 684-687 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Hydroxy-terminated copoly(fstyrene-b-1,2-butadiene) (HPSB) containing rubber-affinitive vinyl side chains and having a molecular weight of 2000 to 4000 were prepared, and block copolyurethanes were synthesized by using a low molecular weight hydroxy-terminated poly (ethyl en e terephthalate) as a PET-affinitive component and 4,4′-diphenylmethane diisocyanate as a chain extender. The relationships between the molecular weight of HPSB, copolymerization ratio of styrene to butadiene and the adhesive strength of PKT/rubber in high temperature atmospheres were examined. A peak of adhesive strength was observed at styrene copolymerization ratio of 20 wt percent and a HPSB molecular weight of 3000. The adhesion mechanism was estimated from the behavior of the characteristic infrared absorption of block Copolyurethane in heating.
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  • 98
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    Polymer Engineering and Science 28 (1988), S. 718-727 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: In vibration welding of thermoplastics, frictional work done by vibrating two parts under pressure, along their common interface, is used to generate heat to effect a weld. The main process parameters in vibration welding are the weld frequency, the amplitude of the vibratory motion, the weld pressure, and the weld time. How these parameters affect weld quality, the conditions that result in the best welds, the weldability of dissimilar plastics, and the effect of fillers such as glass are of interest. To address these issues, a research vibration welding machine in which all the parameters can be independently and accurately controlled and monitored was designed and fabricated. The phenomenology of welding, as determined by experiments on the four thermoplastics polycarbonate, poly (butylene terephthalate), polyetherimide, and modified poly (phenylene oxide), is described.
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  • 99
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    Polymer Engineering and Science 28 (1988), S. 743-757 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: An engineering analysis of the reactive extrusion process of a thermoplastic polyurethane was made through numerical simulation and actual experiment. The reactants used in this system were 4,4′diphenylmethane diisocyanate, polycaprolactone diol (M.W., 824), and 1,4-bu-tanediol with equivalent weight ratio of 2:1:1. As a catalyst, dibutyltin dilaurate was used. The reaction kinetics and the viscosity function were obtained through experiments, and the mathematical model which includes the conservation equations of mass, momentum, energy, and chemical species was solved numerically to obtain the velocity, concentration, temperature, viscosity, and pressure profiles. The actual experiments were performed in the laboratory scale extruder to compare the experimental results with those of the numerical simulation.
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  • 100
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    Polymer Engineering and Science 28 (1988), S. 775-784 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A series of polyurethane-urea/polyvinyl simultaneous interpenetrating polymer networks (SINs) were prepared starting from a mixture of isocyanate prepolymer blocked with N-(1-1′-dimethyl-3-cxobutyl) acrylamide oxime, chain extender, vinyl monomers, and catalysts. Their physical properties and morphology were investigated using differential scanning calorimetry, dynamic mechanical measurements, and small-angle X-ray scattering. The polyurethane-urea networks examined were two-phase in nature. The vinyl network was formed with diacetone acrylamide oxime, trimethylolpropane trimethacrylate, and N-vinyl-pyrrolidone. Calorimetric analyses revealed that the polyether soft segment phase separated within the SINs. At higher temperature, dynamic mechanical measurements demonstrated the presence of only one glass transition temperature (Tg) intermediate in temperature to the Tg of the vinyl network and the Tg of the urethane hard phase. This is indicative of chain entanglement (interpenetration) between the vinyl network and the polyurethane hard segments resulting in a two-phase morphology. Small-angle X-ray scattering analyses provided measurements of diffuse phase boundary thickness, phase mixing, and domain size distribution. Appreciable interfacial thickness was not observed and thus phase mixing occurred within the phases. Domain size distribution indicated that high network constraints hindered the development of domains and limited the phase segregation.
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