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  • Articles  (20)
  • 61.40  (20)
  • 2010-2014
  • 1985-1989  (20)
  • 1950-1954
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (20)
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  • Articles  (20)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (20)
  • Physics  (21)
  • 1
    ISSN: 1432-0630
    Keywords: 61.40 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photo-electric properties of a-Si:H(F)/a-SiGex:H(F) multilayer films were investigated by measurements of optical absorption, and photoconductivity in both steady and transient modes with the repetition length and the difference in the optical gap between a-Si:H(F) and a-SiGex:H(F) as the variables. Measurements of primary photocurrent clarified that photosensitivity for the multilayer films extended to longer wavelengths of around 725 nm, while high resistivity was maintained despite of lowering the band gap. The drift mobility of electrons was measured by the time-of-flight technique, showing 10−2-10−3 cm2/Vs, while the drift mobility-lifetime products of electron was maintained to be 10−7 cm2/V. On the other hand, the drift mobility of holes was 10−3 cm2/Vs, which was the similar magnitude to that of a-Si:H(F).
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  • 2
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    Applied physics 41 (1986), S. 297-303 
    ISSN: 1432-0630
    Keywords: 85.60 ; 61.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The use of a-Si devices (diodes and transistors) in active matrix flat-panel displays is reviewed. The fabrication of the elements and their characteristics with steady and pulsed applied potentials are discussed. Two experimental arrays of 32×32 BBDs and 256×320 TFTs are shown.
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  • 3
    ISSN: 1432-0630
    Keywords: 42.60 ; 61.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A cw CO2 laser, coupled with an astigmatism free beam focussing mirrors arrangement is used for processing a brittle plastic, CR-39 without producing cracks, vents or chips. The processing is based on the formation of volatile products of laser-induced decomposition in the plastic. Threshold fluence for the decomposition (found to be independent of the power density and beam residence time) in CR-39 atλ=10.6μm is determined to be 25 J cm−2 and the decomposition threshold power density for cw irradiation 2.1±0.5 W cm−2. The depth and width of the tapered laser processed region are observed to increase with power density and beam residence time. The widths attain a steady state value of ∼ 1 mm at beam residence time above 65 ms, for a fixed power density (2.5×104 W cm−2) and sheet thickness (250 μm). Taper angle of the edges decreases with increasing power density and/or beam residence time. The heat affected zone (measured in crossed polarisers) around the processed region is found to extend with increasing beam residence time but remains unaffected on changing power density. The results are discussed in terms of the optical and thermophysical properties of CR-39 and the parameters of the interacting laser beam.
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  • 4
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    Applied physics 44 (1987), S. 347-352 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30 ; 61.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The stable defects created in most dielectrica by fast heavy ions, called “latent nuclear tracks”, are zones of reduced density. Using the small-angle neutron-scattering technique it is shown that water molecules which permeate a polymer foil are preferentially embedded in these zones. In the track region the diffusion- and the sorption coefficients for various atoms and molecules are larger than in unirradiated material. In the damaged region of tracks produced by uranium ions in Polyethyleneterephtalate (PETP) the permeability for neon, oxygen, argon, carbondioxide, and water is enhanced by factors between 60 and 290. A method for the preferential etching of latent nuclear tracks in PETP using methanol as a solvent is suggested.
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  • 5
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    Applied physics 45 (1988), S. 53-61 
    ISSN: 1432-0630
    Keywords: 61.40 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Amorphous silicon thin-film integrated circuits, with between 4 and 18 transistor functions per chip, have been fabricated on glass substrates. The amorphous silicon and the dielectric layers are deposited by rf glow discharge. The circuits have been designed to realize basic logic functions such as inverters, NAND and NOR gates, and addressable memory cells. For the first time, an amorphous silicon flip flop requiring a supply voltage of only 4.5 V has been manufactured. The logic voltage levels of the flip flop are compatible with standard bipolar TTL circuits. Measurements on an inverter chain show a typical propagation delay time of 70 μs and a power-delay-time product of 65 pJ. All of the circuits use n-channel enhancement type load transistors instead of integrated ohmic load resistors. The channel length of the driver transistors is 15 μm with a gate source/drain overlap of 7.5 μm. Experimental geometry ratios range from β=2.25 to β=21. Generally, the driver transistors exhibit on/off ratios greater than 106 for supply voltages smaller than 5 V. At these voltages the measured on-currents per unit channel width are in the order of 5...10nA/μm. The influence of the geometry ratio on static inverter characteristic and switching speed is discussed by means of a simple model. Two different manufacturing schemes for the fabrication of the integrated circuits are outlined. Mask layouts and experimental transfer characteristics of several integrated circuits are presented.
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  • 6
    ISSN: 1432-0630
    Keywords: 74.70 ; 61.40 ; 76.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electron-diffraction patterns and high-resolution images show that the high-T c compounds in the system Bi-Ca-Sr-Cu-O exhibit incommensurately modulated superstructures of an Aurivillius-like basic structure. The modulation occurs in different symmetry related directions, giving rise to a number of superstructure variants and to different types of interfaces. No structural phase transitions are found in the temperature range from 20 K to the melting point.
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  • 7
    ISSN: 1432-0630
    Keywords: 61.40 ; 72.20 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Films of a-Si: H have been deposited by means of a dc hot cathode discharge of SiH4 with electrostatic confinement at a pressure as low as 0.4 Pa. The plasma used is quite quiescent as has been observed by means of reproducible Langmuir probe measurements. Substrates have been placed at different locations in between the electrodes, some of them facing the anode and the others facing the cathode. Films deposited on substrates facing the cathode present a granular, non-columnar, structure, an IR spectrum with only SiH absorption peaks, and a very low photoresponse. Films deposited on substrates facing the anode have a similar IR spectrum but are homogeneous, have lower hydrogen content, and present a high photoresponse. The optical absorption coefficientα shows in all samples theαnE=C(E−E0) x behaviour, but with exponentx=3 and notx=2 as is usually considered in a-Si∶H.
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  • 8
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    Applied physics 42 (1987), S. 201-204 
    ISSN: 1432-0630
    Keywords: 61.40 ; 75.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Magnetic and electrical properties of amorphous Mn-Y, Mn-Zr, and Mn-Nb alloys have been investigated. All these alloys have a temperature-dependent susceptibility which is well fitted by a Curie-Weiss law. This implies the existence of localized magnetic moments associated with the Mn atoms. In addition, amorphous Mn-Y alloys exhibit spin-glass characteristics at low temperature. The experimental results of the electrical resistivity show that the temperature coefficient of resistivity (TCR) of both Mn-Y and Mn-Zr are negative, while Mn-Nb has a positive TCR. On the other hand, the resistivity-temperature curves of Mn-Zr and Mn-Nb have nearly the same tendency but are different from that of Mn-Y.
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  • 9
    ISSN: 1432-0630
    Keywords: 61.40 ; 66.30 ; 61.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Non-oxide chalcogenide glasses based on more than one network former species have certain advantages for applications as solid electrolytes in batteries. To elucidate the influence of competitive glass-formation on the structural and motional properties of ionically conductive chalcogenide glasses, the system (Li2S)0.67[(B2S3)1−y (P2S5) y ]0.33 has been characterized comprehensively by DSC, electrical conductivity and6Li,7Li,31P, and11B solid state NMR techniques. The data obtained provide the first systematic characterization of the coformer effect in a chalcogenide glass system. Homogeneous glassy samples are formed fory=0.3 and 0.9≦y≦1.0, and microphase separated glasses for 0≦y≦0.2. The presence of a coformer leads to an increase in the electrical conductivity and a decrease of the activation energy, as compared to either binary system (Li2S-B2S3 or Li2S-P2S5), but only if homogeneous glasses are formed. The NMR data, in conjunction with systematic DSC and NMR studies of the binary systems (Li2S)x(B2S3)1−x (0.50≦x≦0.75) and (Li2S) x (P2S5)1−x (0.50≦x≦0.70), lead to the following conclusions: 1)11B MAS-NMR is well-suited to quantitate the amounts of three- and four coordinated boron atoms; in the binary glasses, the fraction of four-fold boron (N4) increases with decreasing Li2S/B2S3 ratio; in the ternary glasses N4 increases with increasingy. 2)31P MAS-NMR spectra of the binary glasses discriminate between three different phosphorus microenvironments, assigned to sulfide-analogs of metaphosphate, pyrophosphate, and orthophosphate species, respectively. These results suggest the applicability of network modification models originally developed for oxide glasses. For the ternary glasses, the DSC and NMR data of glasses with low phosphorus contents are consistent with a phase separation model involving a Li-rich thioborate glass that contains all of the phosphorus component and a glass phase less rich in lithium containing the four-fold boron atoms. In addition to the structural studies, the7Li spin-spin relaxation times (T 2) are used to characterize the mobility of the Li atoms. The activation energy of Li motion, determined from temperature dependentT 2 measurements and analyzed by using BPP theory differs from that determined from conductivity measurements by a factor of 2–3, possibly reflecting the inapplicability of this theory to the lithium diffusion process.
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  • 10
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    Applied physics 49 (1989), S. 249-257 
    ISSN: 1432-0630
    Keywords: 61.40 ; 61.10 ; 66.30 ; 64.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract (PEO) n :ZnX 2 (X = I, Br) complexes were formed at room temperature with values ofn ranging from 8 to 30. Differential scanning calorimetry (DSC) results indicate that none of them contained any crystalline phases that can be associated with the formation of a complex (i.e. it can be assumed that all the salt is in the amorphous phase). EXAFS studies carried out on these samples suggest that the zinc cation is co-ordinated to two of the halide ions and, in addition, to 4 oxygen atoms whereX = I and 6 oxygen atoms whereX = Br. The DSC results confirm that the zinc cation is in an environment independent of overall stoichiometry, as the glass transition temperatures of the samples were found to be similar throughout. By comparing these with those of annealed samples (made by heating the above samples to 150°C and cooling to −80°C at 320°C min−1) it was found that the stoichiometry of the amorphous phase was roughly 6∶1 forX=I and 8∶1 forX = Br.
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  • 11
    ISSN: 1432-0630
    Keywords: 61.80 ; 61.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Fast heavy ions produce stable defects in most dielectrica. As examples mica, Polyethylenterephtalat and Polystyrol were irradiated with Ar, Ni, Kr, Xe and U ions in an energy range from 0.5 up to 20 MeV/u. The resulting defects were investigated by neutron and x-ray small-angle scattering. The ion beam supplied by the UNILAC accelerator at GSI Darmstadt is characterized by its small emittance, the well defined mass, charge and energy of the ions and their stochastical distribution in the phase space. In scattering experiments the system of scattering centers created by these ions causes a scattered intensity distribution which strongly depends on the orientation of the sample with respect to the unscattered neutron or x-ray beam. This dependence is investigated and explained. By a mathematical model — describing form, size, and density of the average ion track — the measured intensity distribution is simulated. Based on the model, computer procedures are written, simulating the scattering experiment by varying the most important experimental and instrumental parameters and calculating the expected theoretical intensity distribution on the detector. The parameter values of this model — the maximum density difference in the track, length of the defect, and radial dimension — are determined by least square fits to the measured data. A simple description of the dependence of these parameters on the ion energy can be given in relation to the energy loss of the primary ion. It is not only possible now to predict an expected track, to calculate its volume and the number of missing atoms, but moreover to check theories of the track formation.
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  • 12
    ISSN: 1432-0630
    Keywords: 61.40 ; 73.60 ; 78.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A series of experimental studies has been made on the relationship between optical and structural properties of hydrogenated amorphous silicon (a-Si:H) prepared under various conditions. It has been clarified by analysing the results that the shape of the energy spectrum near the band edge and the distribution of the valence-band tail states depend primarily on the structural disorder of the Si network in a-Si:H. On the other hand, the total content and the bonding mode of bonded hydrogen have little effects on these electronic properties of a-Si:H. It has also been found that the distribution of the valenceband tail states might be related to other unidentified factor(s) besides the structural disorder. The present results have been compared with those of the previous experimental and theoretical studies.
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  • 13
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    Applied physics 49 (1989), S. 239-247 
    ISSN: 1432-0630
    Keywords: 61.40 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract That ionic conductivity in glass is a non-exponential process and has been known for many years. The amorphous structure of glass and hence a distribution of cation sites has often been thought to be the cause for the non-exponentiality. Almost completely unresearched, however, has been the effect of glass composition on the nature of the relaxation process. In this paper, we review the observations that have been made of the relationships between glass composition and the non-exponential character of the conductivity relaxation as well combine our recent wide composition range studies of sodium aluminoborate and lithium phosphate glasses to delineate the major features of the correlation. By examining glass compositions ranging from 0.02 to 60 mole% alkalioxide, it is observed that the rapid development of non-exponentiality within 1% Na2O is accompanied by a similar rapid decrease in the average cation-cation separation distance, this being calculated using the composition and density. Other quantities such as the dc conductivity or activation energy are observed to vary too slowly with composition to produce a linear correlation with the extent of non-exponentiality as monitored in theβ parameter of the stretched exponentialkww function.
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  • 14
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    Applied physics 36 (1985), S. 189-192 
    ISSN: 1432-0630
    Keywords: 61.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ag-Si alloys of various compositions were produced by laser-induced melting and quenching of vapour-deposited thin films. Despite cooling rates approaching 1010K/s the procedure fails to yield glassy phases for all compositions except those around 80 at.-% Si. This behaviour contrasts with that of the Au-Si system which under similar experimental conditions yields glasses at almost arbitrary concentrations. The difference in glass forming ability of these two systems, which have similar phase diagrams, is explained in terms of the difference in the heat of mixing of the liquid, and its consequent effect on both the thermodynamics and kinetics of these alloys.
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  • 15
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    Applied physics 41 (1986), S. 267-274 
    ISSN: 1432-0630
    Keywords: 85.60 ; 61.40 ; 84.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The super chamber, a separated UHV reaction-chamber system has been developed. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method. As a new material, amorphous superlattice-structure films were fabricated by the photo-CVD method for the first time. Superlattice structure p-layer a-Si solar cells were fabricated, and a conversion efficiency of 10.5% was obtained. For the fabrication of integrated type a-Si solar cell modules, a laser pattering method was investigated. A thermal analysis of the multilayer structure was done. It was confirmed that selective scribing for a-Si, TCO and metal film is possible by controlling the laser power density. Recently developed a-Si solar power generation systems and a-Si solar cell roofing tiles are also described.
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  • 16
    ISSN: 1432-0630
    Keywords: 61.40 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The modification of the emitter structure of silicon bipolar transistors results in more freedom in the choice between sometimes conflicting device parameters. The approach followed in this work is the use of an amorphous silicon (a-Si:H) or microcrystalline silicon (μc-Si) emitter, creating a real heterojunction with the crystalline silicon base. Due to the larger bandgap of these emitter materials, the back injection of minority carriers is strongly suppressed in comparison with conventional bipolar transistors. Furthermore, the small temperature coefficient of the current gainβ allows the use of these heterojunction bipolar transistors (HBT) over a wide temperature range. Most likely, the biggest advantage of such HBTs is that a better high-frequency behaviour could be obtained. However, some problems still need to be solved such as the recombination at the emitter-base interface and the high resistivity of the emitter material.
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  • 17
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    Applied physics 45 (1988), S. 185-187 
    ISSN: 1432-0630
    Keywords: 61.40 ; 66.30 ; 78
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The influence of thermal treatment on a (Li2O∶Al2O3∶ SiO2) glass ceramic is studied by laser spectroscopy. At temperatures above 800 °C a fluorescence of Cr3+ ions around 693 nm appears which indicates the growth of crystallites where the Cr3+ ions occupy sites similar to those in Al2O3.
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  • 18
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    Applied physics 41 (1986), S. 285-289 
    ISSN: 1432-0630
    Keywords: 61.40 ; 72.80 Ng ; 73.40 Qv ; 73.90+f
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An analysis of characteristics of a-Si:H thin-film transistors were performed. The mobility of electrons in the accumulation layer induced by a gate voltage was in a order of 0.5 cm2/V · s at a field strength lower than 1×104V/cm, and proportional toE −r at higher electric field, wherer was 0–0.2. The effect of thermal annealing at the temperatures 100–160°C on the parametersV T andr are discussed. The activation energies for the variation of both parameters were 0.31 eV and 0.33 eV, respectively, that suggests the mechanism influencing both parameters may be the same. The mechanism is discussed in relation to the carrier hopping through the network of localized states.
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  • 19
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    Applied physics 41 (1986), S. 305-309 
    ISSN: 1432-0630
    Keywords: 61.40 ; 84.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Amorphous-silicon solar cells generally exhibit a degradation of conversion efficiency in the first few weeks of exposure to sun light. This degradation is associated with metastable defect centers that influence many of the properties of hydrogenated amorphous-silicon. This paper discusses a model for these metastable centers that is based on the assumption that holes can be trapped near microvoids and can induce the motion of hydrogen on the internal surfaces of the microvoids.
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  • 20
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    Applied physics 49 (1989), S. 425-429 
    ISSN: 1432-0630
    Keywords: 61.40 ; 66.30 ; 72.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The physico-chemical and electrochemical properties of a new class of polymer electrolytes formed by complexes of poly(ethylene oxide) and copper trifluorosulphonate salts have been investigated. The results suggest that these electrolytes are good copper ion conductors. Under particular conditions of concentration and temperature, and apparent electronic transport has also been evidenced.
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