Abstract
An analysis of characteristics of a-Si:H thin-film transistors were performed. The mobility of electrons in the accumulation layer induced by a gate voltage was in a order of 0.5 cm2/V · s at a field strength lower than 1×104V/cm, and proportional toE −r at higher electric field, wherer was 0–0.2.
The effect of thermal annealing at the temperatures 100–160°C on the parametersV T andr are discussed. The activation energies for the variation of both parameters were 0.31 eV and 0.33 eV, respectively, that suggests the mechanism influencing both parameters may be the same. The mechanism is discussed in relation to the carrier hopping through the network of localized states.
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Ohima, S., Yamada, T., Hayashida, T. et al. Characterization of a a-Si:H thin-film transistors and the effect of thermal annealing. Appl. Phys. A 41, 285–289 (1986). https://doi.org/10.1007/BF00616050
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DOI: https://doi.org/10.1007/BF00616050