Abstract
Amorphous-silicon solar cells generally exhibit a degradation of conversion efficiency in the first few weeks of exposure to sun light. This degradation is associated with metastable defect centers that influence many of the properties of hydrogenated amorphous-silicon. This paper discusses a model for these metastable centers that is based on the assumption that holes can be trapped near microvoids and can induce the motion of hydrogen on the internal surfaces of the microvoids.
Similar content being viewed by others
References
D.E. Carlson: U.S. Patent No. 4,064,521 (1977)
J. Yang, R. Ross, R. Mohr, J.P. Fournier: 18th IEEE Photovoltaic Specialists Conf., Las Vegas, Nevada (Oct., 1985)
H.S. Ullal, D.L. Morel, D.R. Willett, D. Kanai, P.C. Taylor, C. Lee: Conf. Record of 17th IEEE Photovoltaic Specialists Conf. (IEEE, NY 1984) p. 359
D.E. Carlson: InHydrogenated Amorphous Silicon, Pt.D, ed. by J.I. Pankove (Academic, New York 1984) p. 7
D.L. Staebler, C.R. Wronski: Appl. Phys. Lett.31, 292 (1977)
I. Hirabayashi, K. Morigaki, S. Nitta: Jpn. J. Appl. Phys.19, L357 (1980)
H. Dersch, J. Stuke, J. Beichler: Appl. Phys. Lett.38, 456 (1981)
D.E. Carlson: Solar Energy Mater.8, 129 (1982)
S. Yamazaki, T. Shiraishi, D. Adler: J. Non-Cryst. Solids68, 167 (1984)
D. Adler, M.E. Eberhart, K.H. Johnson, S.A. Zygmunt: J. Non-Cryst. Solids66, 273 (1984)
R. Bellissent, A. Chenevas-Paule, M. Roth: Physica117B & 1188, 938 (1983)
P. D'Antonio, J.H. Konnert:Tetrahedrally Bonded Amorphous Semiconductors, ed. by RA. Street, D.K. Biegelsen, J.C. Knights (AIP, New York 1981) p. 117
Y. Katayama, T. Shimada, K. Usami, E. Mamyama: J. Phys. (Paris)42, C4–787 (1981)
J.A. Reimer, R.W. Vaughnan, J.C. Knights: Phys. Rev. B24, 3360 (1981)
E.g., the covalent bond in H2 has a dissociation energy of 4.48 while that for H +2 is 2.65 eV; A.G. Gaydon:Dissociation Energies and Spectra of Diatomic Molecules (Wiley, New York 1947)
D.E. Carlson, A.R. Moore, D.J. Szostak, B. Goldstein, R.W. Smith, P.J. Zanzucchi, W.R. Frenchu: Solar Cells9, 19 (1983)
P. Zhang, C. Tan, Q. Zhu, S. Peng: 10th Intl. Conf. on Amorphous & Liquid Semicond, Japan (1983)
C.S. Hong, K.S. Teng, K.C. Hsu, W.J. Jou, J.Y. Ueng, S.C. Lee, H.L. Hwang: 18th IEEE Photovoltaic Specialists Conf., Las Vegas (Oct. 1985)
H. Fritzsche, J. Kakalios, D. Bernstein: AIP Conf.Proc.120, 229 (1984)
A. Chenevas-Paule, R. Bellissent, M. Roth, J. Pankove: 11th Intl. Conf. on Amorphous & Liquid Semicond., Rome (1985)
J.I. Pankove, C.W. Magee, R.O. Wance: Appl. Phys. Lett.47, 748 (1985)
N.M. Johnson: Appl. Phys. Lett.47, 874 (1985)
A.J. Tavendale, A.A. Williams, S.J. Pearton: Appl. Phys. Lett.48, 584 (1986)
G.G. DeLeo, W.B. Fowler: Phys. Rev. B31, 6861 (1985)
N. Szydlo, J. Magarino, D. Kaplan: J. Appl. Phys.53, 5044 (1982)
A.E. Widmer, R. Fehlmann, C.W. Magee: J. Non-Cryst. Solids54, 199 (1983)
P.A. Thomas, M.H. Brodsky, D. Kaplan, D. Lepine: Phys. Rev. B18, 3059 (1978)
S. Veprek, Z. Iqbal, H.R. Oswald, F.A. Sarott, J.J. Wagner: J. Phys. (Paris)42, C4–251 (1981)
T. Sakurai, H.D. Hagstrum: Phys. Rev. B14, 1593 (1976)
I. Imura, K. Ushita, A. Hiraki: Jpn. J. Appl. Phys.19, L65 (1980)
R. Watts:Point Defects in Crystals (Wiley, New York 1977)
D.E. Carlson, C.W. Magee: Appl. Phys. Lett.33, 81 (1978)
W. Beyer, H. Wagner: J. Appl. Phys.53, 8745 (1982)
W. den Boer, S. Guha: J. Appl. Phys.57, 5539 (1985)
K. Morigaki, I. Hirabayashi, N. Nakayama, S. Nitta, K. Shimakawa: Solid State Commun.33, 851 (1980)
D.L. Staebler, R.S. Crandall, R. Williams: Appl. Phys. Lett.39, 733 (1981)
P. John, B.C. Cowie, I.M. Odeh: Philos. Mag. B49, 559 (1984)
J.B. Boyce, M. Stutzmann: Bull. Am. Phys. Soc.30, 354 (1985)
C. Lee, W.D. Ohlsen, P.C. Taylor, H.S. Ullal, G.P. Ceasar: Phys. Rev. B31, 100 (1985)
M. Brodsky, M.A. Frisch, J.F. Ziegler, W.A. Lanford: Appl. Phys. Lett.30, 561 (1977)
K. Ozawa, N. Takagi, K. Asama: Jpn. J. Appl. Phys.22, 767 (1983)
Y. Minamino, Y. Nitta, K. Fujisawa, H. Kubo, C. Iwasaki, T. Minato, K. Tomita, K. Ishibitsu: Conf. Record of 17th IEEE Photovoltaic Specialists Conf. (IEEE, NY 1984) p. 229
P. Irsigler, D. Wagner, D.J. Dunstan: J. Non-Cryst. Solids69, 207 (1985)
J. Jang, C. Lee: AIP Conf. Proc.120, 280 (1984)
I. Hirabayashi, K. Morgaki, M. Yoshida: Solar Energy Mater.8, 123 (1982)
D.E. Carlson: Unpublished data
Chronar Corp. Annual Progress Report, 1 Oct. 1984–30 Sept. 1985, SERI Subcontract No. ZB-3-03056-1
T. Shimizu, M. Kumeda, A Morimoto, H. Yokomichi, N. Ishii: 11th Intl. Conf. on Amorphous and Liquid Semicond., Rome (1985)
H. Matsumura, T. Uesugi, H. Ihara: 16th Intl. Conf. on Solid State Devices and Mat., Kobe, Japan (1984)
A. Morimoto, H. Yokomichi, T. Atoji, M. Kumeda, I. Watanabe, T. Shimizu: AIP Conf.120, 221 (1984)
M. Ohsawa, T. Hama, T. Akasaka, T. Ichimura, H. Sakai, S. Ishida, Y. Uchida: Jpn. J. Appl. Phys.24, L838 (1985)
D.L. Staebler, J.I. Pankove: Appl. Phys. Lett.37, 609 (1980)
S. Hasegawa, D. Ando, Y. Kurata, T. Shimizu: Philos. Mag. B47, 139 (1983)
H. Fritzsche, M. Tanielian, C.C. Tsai, P.J. Gaczi: J. Appl. Phys.50, 3366 (1979)
H.R. Shanks, F.R. Jeffrey, M.E. Lowry: J. Phys. (Paris)42, C4–773 (1981)