ALBERT

Description: We present results on wavelength division multiplexing of radio-frequency single electron transistors. We use a network of resonant impedance matching circuits to direct applied rf carrier waves to different transistors depending on carrier frequency. A two-channel demonstration of this concept using discrete components successfully reconstructed input signals with small levels of cross coupling. A lithographic version of the rf circuits had measured parameters in agreement with electromagnetic modeling, with reduced cross capacitance and inductance, and should allow 20 to 50 channels to be multiplexed.

Description: In this work an electromagnetic model and subsequent design is presented for a traveling-wave, coplanar waveguide (CPW) based source that will operate in the THz frequency regime. The radio frequency (RF) driving current is a result of photoexcitation of a thin GaAs membrane using two frequency-offset lasers. The GaAs film is grown by molecular-beam-epitaxy (MBE) and displays sub-ps carrier lifetimes which enable the material conductivity to be modulated at a very high rate. The RF current flows between electrodes deposited on the GaAs membrane which are biased with a DC voltage source. The electrodes form a CPW and are terminated with a double slot antenna that couples the power to a quasi-optical system. The membrane is suspended above a metallic reflector to launch all radiation in one direction. The theoretical investigation and consequent design is performed in two steps. The first step consists of a direct evaluation of the magnetic current distribution on an infinitely extended coplanar waveguide excited by an impressed electric current distributed over a finite area. The result of the analysis is the difference between the incident angle of the laser beams and the length of the excited area that maximizes the RF power coupled to the CPW. The optimal values for both parameters are found as functions of the CPW and membrane dimensions as well as the dielectric constants of the layers. In the second step, a design is presented of a double slot antenna that matches the CPW characteristic impedance and gives good overall performance. The design is presently being implemented and measurements will soon be available.

Description: Yagi-Uda antennas are known to be difficult to design and optimize due to their sensitivity at high gain, and the inclusion of numerous parasitic elements. We present a genetic algorithm-based automated antenna optimization system that uses a fixed Yagi-Uda topology and a byte-encoded antenna representation. The fitness calculation allows the implicit relationship between power gain and sidelobe/backlobe loss to emerge naturally, a technique that is less complex than previous approaches. The genetic operators used are also simpler. Our results include Yagi-Uda antennas that have excellent bandwidth and gain properties with very good impedance characteristics. Results exceeded previous Yagi-Uda antennas produced via evolutionary algorithms by at least 7.8% in mainlobe gain. We also present encouraging preliminary results where a coevolutionary genetic algorithm is used.

Description: Inflatable array antennas are being developed to significantly reduce the mass, the launch vehicle's stowage volume, and the cost of future spacecraft systems. Three inflatable array antennas, recently developed for spacecraft applications, are a 3.3 m x 1.0 m L-band synthetic-aperture radar (SAR) array, a 1.0 m-diameter X-band telecom reflectarray, and a 3 m-diameter Ka-band telecom reflectarray. All three antennas are similar in construction, and each consists of an inflatable tubular frame that supports and tensions a multi-layer thin-membrane RF radiating surface with printed microstrip patches. The L-band SAR array achieved a bandwidth of 80 MHz, an aperture efficiency of 74%, and a total mass of 15 kg. The X-band reflectarray achieved an aperture efficiency of 37%, good radiation patterns, and a total mass of 1.2 kg (excluding the inflation system). The 3 m Ka-band reflectarray achieved a surface flatness of 0.1 mm RMS, good radiation patterns, and a total mass of 12.8 kg (excluding the inflation system). These antennas demonstrated that inflatable arrays are feasible across the microwave and millimeter-wave spectrums. Further developments of these antennas are deemed necessary, in particular, in the area of qualifying the inflatable structures for space-environment usage.

Description: History shows that in astronomy, more is better. In the near future, direct detector arrays for the far-infrared and submillimeter will contain hundreds to thousands of elements. A multiplexed readout is necessary for practical implementation of such arrays, and has been developed using SQUIDs. The technology permits a 32 x 32 array of bolometers to be read out using approximately 100 wires rather than the 〉2000 needed with direct wiring. These bolometer arrays are made by micromachining techniques, using superconducting transition edge sensors as the thermistors. We describe the development of this multiplexed superconducting bolometer array architecture as a step toward bringing about the first astronomically useful arrays of this design. This technology will be used in the Submillimeter and Far Infrared Experiment (SAFIRE) instrument on Stratospheric Observatory for Infrared Astronomy (SOFIA), and is a candidate for a wide variety of other spectroscopic and photometric instruments.

Description: This viewgraph paper presents a report on the ongoing testing of Lithium Ion (Li-Ion) cells. Characterizes cells according to capacity, self-discharge, and mid-discharge voltage. Determines the cycling performance of Li-Ion cells as batteries according to number of cycles, charge voltage, and temperature.

Description: The modelling effort outlined in this viewgraph presentation encompasses the following topics: 1) Electrochemical Deposition of Nickel Hydroxide; 2) Deposition rates of thin films; 3) Impregnation of porous electrodes; 4) Experimental Characterization of Nickel Hydroxide; 5) Diffusion coefficients of protons; 6) Self-discharge rates (i.e., oxygen-evolution kinetics); 7) Hysteresis between charge and discharge; 8) Capacity loss on cycling; 9) Experimental Verification of the Ni/H2 Battery Model; 10) Mathematical Modeling Li-Ion Batteries; 11) Experimental Verification of the Li-Ion Battery Model; 11) Integrated Power System Models for Satellites; and 12) Experimental Verification of Integrated-Systems Model.

Description: This viewgraph presentation outlines the SAFT qualification status history, cell and battery modifications, overall battery characteristics, satellite programs and battery types delivered, and battery performances for selected satellite missions.

Description: This viewgraph presentation discusses silver/zinc cell casing configurations and test results examining discharge capacity and silver migration comparisons. The following recommendations were proposed: 1) Use silver-treated cellophane instead of clear cellophane; 2) Use split wrap for cellophane whenever possible; and 3) Strongly consider use of sausage casing with PVA film in the following configuration: 1-mil (tubular) SC/1-mil PVA film/2.3-mil plain or 6-mil fiber-reinforced SC tubular.

Description: In this paper we will discuss the techniques that are being used to make optical beam splitter especially the same-of-the-art splitters.

Description: Various techniques have been applied to deploying individual droplets for many applications, such as the study of the combustion of liquid fuels. Isolated droplet studies are useful in that they allow phenomena to be studied under well-controlled and simplified conditions. A high-voltage droplet dispenser has been developed that is extremely effective in dispensing a wide range of droplets. The dispenser is quite unique in that it utilizes a droplet bias voltage, as well as an ionization pulse, to release the droplet. The droplet is deployed from the end of a needle. A flat-tipped, stainless steel needle attached to a syringe dispenses a known value of liquid that hangs on the needle tip. Somewhat below the droplet is an annular ring electrode. A bias voltage, followed by a voltage pulse, is applied to attract the droplet sufficiently to pull it off the needle. The droplet and needle are oppositely charged relative to the annular electrode. The needle is negatively charged, and the annular ring is positively charged.

Description: The phenomenal growth of the satellite communications industry has created a large demand for traveling-wave tubes (TWT's) operating with unprecedented specifications requiring the design and production of many novel devices in record time. To achieve this, the TWT industry heavily relies on computational modeling. However, the TWT industry's computational modeling capabilities need to be improved because there are often discrepancies between measured TWT data and that predicted by conventional two-dimensional helical TWT interaction codes. This limits the analysis and design of novel devices or TWT's with parameters differing from what is conventionally manufactured. In addition, the inaccuracy of current computational tools limits achievable TWT performance because optimized designs require highly accurate models. To address these concerns, a fully three-dimensional, time-dependent, helical TWT interaction model was developed using the electromagnetic particle-in-cell code MAFIA (Solution of MAxwell's equations by the Finite-Integration-Algorithm). The model includes a short section of helical slow-wave circuit with excitation fed by radiofrequency input/output couplers, and an electron beam contained by periodic permanent magnet focusing. A cutaway view of several turns of the three-dimensional helical slow-wave circuit with input/output couplers is shown. This has been shown to be more accurate than conventionally used two-dimensional models. The growth of the communications industry has also imposed a demand for increased data rates for the transmission of large volumes of data. To achieve increased data rates, complex modulation and multiple access techniques are employed requiring minimum distortion of the signal as it is passed through the TWT. Thus, intersymbol interference (ISI) becomes a major consideration, as well as suspected causes such as reflections within the TWT. To experimentally investigate effects of the physical TWT on ISI would be prohibitively expensive, as it would require manufacturing numerous amplifiers, in addition to acquiring the required digital hardware. As an alternative, the time-domain TWT interaction model developed here provides the capability to establish a computational test bench where ISI or bit error rate can be simulated as a function of TWT operating parameters and component geometries. Intermodulation products, harmonic generation, and backward waves can also be monitored with the model for similar correlations. The advancements in computational capabilities and corresponding potential improvements in TWT performance may prove to be the enabling technologies for realizing unprecedented data rates for near real time transmission of the increasingly larger volumes of data demanded by planned commercial and Government satellite communications applications. This work is in support of the Cross Enterprise Technology Development Program in Headquarters' Advanced Technology & Mission Studies Division and the Air Force Office of Scientific Research Small Business Technology Transfer programs.

Description: The NASA aerospace program, in particular, requires breakthrough instrumentation inside the combustion chambers of engines for the purpose of, among other things, improving computational fluid dynamics code validation and active engine behavioral control (combustion, flow, stall, and noise). This environment can be as high as 600 degrees Celsius, which is beyond the capability of silicon and gallium arsenide devices. Silicon-carbide- (SiC-) based devices appear to be the most technologically mature among wide-bandgap semiconductors with the proven capability to function at temperatures above 500 degrees Celsius. However, the contact metalization of SiC degrades severely beyond this temperature because of factors such as the interdiffusion between layers, oxidation of the contact, and compositional and microstructural changes at the metal/semiconductor interface. These mechanisms have been proven to be device killers. Very costly and weight-adding packaging schemes that include vacuum sealing are sometimes adopted as a solution.

Description: High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) is currently under development at the NASA Glenn Research Center to meet this need. It uses a thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface. The device can be used strictly in the cooling mode, or it can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly are accomplished by wet etching and wafer bonding techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces and limited failure modes, and minimal induced vibration.

Description: In a lithium-ion battery, the lithium-storage capacity of the carbon anode is greatly affected by a surface layer formed during the first half cycle of lithium insertion and release into and out of the carbon anode. The formation of this solid-electrolyte interface, in turn, is affected by the chemistry of the carbon surface. A study at the NASA Glenn Research Center examined the cause-and-effect relations. Information obtained from this research could contribute in designing a high-capacity lithium-ion battery and, therefore, small, powerful spacecraft. In one test, three types of surfaces were examined: (1) a surface with low oxygen content (1.5 at.%) and a high concentration of active sites, (2) a surface with 4.5 at.% -OH or -OC type oxygen, and (3) a surface with 6.5 at.% O=C type oxygen. The samples were made from the same precursor and had similar bulk properties. They were tested under a constant current of 10 mA/g in half cells that used lithium metal as the counter electrode and 0.5 M lithium iodide in 50/50 (vol%) ethylene carbonate and dimethyl carbonate as the electrolyte. For the first cycle of the electrochemical test, the graph describes the voltage of the carbon anode versus the lithium metal as a function of the capacity (amount of lithium insertion or release). From these data, it can be observed that the surface with low oxygen and a high concentration of active sites could result in a high irreversible capacity. Such a high irreversible capacity could be prevented if the active sites were allowed to react with oxygen in air, producing -OH or -OC type oxygen. The O=C type oxygen, on the other hand, could greatly reduce the capacity of lithium intercalation and, therefore, needs to be avoided during battery fabrication.

Description: New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.

Description: The objective of this paper is to verify the quality and reliability of aerospace battery cells and batteries for NASA flight programs, disseminate the data - to develop a plan for in-orbit battery management - to design a cell/battery for future NASA spacecraft and establish a cell test data base for rechargeable cell/batteries.

Description: This viewgraph presentation discusses the following topics: 1) Capacity walkdown defined and illustrated; 2) Importance of capacity walkdown: 3) Four approaches to understanding the phenomenon - Pressure Trend, Charging Curve, Electrochemical Voltage Spectroscopy, and Destructive Physical Analysis Studies; 4) Results of the interrelated studies; 5) Suggested mechanism for capacity walkdown; and 6) Charging protocols to avoid the problem. In summary: 1) capacity walkdown is a consequence of the inability to maintain a high state of charge; 2) Capacity loss is typically 35% which would be expected by the valence difference between gamma and beta nickel oxyhydroxide; 3) Cycling at -5 degrees facilitates the formation of the gamma phase; 4) Excessive overcharge can also facilitate gamma phase formation at the expense of cycle life; and 5) Conditions can now be suggested to help minimize capacity walkdown.

Description: Several sub-millimeter doubler circuits have been designed and built using a new fabrication technology.

Description: This paper describes the design, fabrication, assembly, testing, and performance both at room temperature and at cryogenic temperatures.

Description: A high power doubler for the frequency band 184 to 212 GHz has been fabricated and tested. The results of the continuing JPL Schottky diode physical modeling effort are discussed, including the effects of temperature and high power operation.

Description: A facility to test the linearity and drift of heterodyne laser metrology gauges for measuring distances of 1 to 7 meters with 10 picometer repeatability is described.

Description: This paper presents JPL progress in building evolution-oriented reconfigurable devices.

Description: The focus of the work conducted is on a class of structures made possible by the merger of logic and memory. Processing In Memory (PIM) extends the design space much farther by closely associating the logic with the memory interface to realize innovative structures never previously possible and thus exposing entirely new opportunities for computer architecture.

Description: A 10GHz optoelectronic oscillator (OEO) with continuous frequency tunability and low phase noise is presented.

Description: This paper presents a new technique for implementing a low-power CMOS imager with simultaneous on-chip computation of the difference and summ of two successive frames.

Description: Design and characterization of a high-performance multi-acuity, multi-window dynamicaly reconfigurable vision (DRV) CMOS imager for real-time staring vision systems is presented.

Description: This roadmap introduces current technologies in use, related strategic issues and trends, and research recommendations for space applications.

Description: The NASA Glenn Research Center and the Cleveland State University have developed a digitally controlled dc-dc converter to research the benefits of flexible, digital control on power electronics and systems. Initial research and testing has shown that conventional dc-dc converters can benefit from improved performance by using digital-signal processors and nonlinear control algorithms.

Description: Electronic components and systems capable of low-temperature operation are needed for many future NASA missions where it is desirable to have smaller, lighter, and cheaper (unheated) spacecraft. These missions include Mars (-20 to -120 C) orbiters, landers, and rovers; Europa (-150 C) oceanic exploratory probes and instrumentation; Saturn (-183 C) and Pluto (-229 C) interplanetary probes. At the present, most electronic equipment can operate down to only -55 C. It would be very desirable to have electronic components that expand the operating temperature range down to -233 C. The successful development of these low-temperature components will eventually allow space probes and onboard electronics to operate in very cold environments (out as far as the planet Pluto). As a result, radioisotope heating units, which are used presently to keep space electronics near room temperature, will be reduced in number or eliminated. The new cold electronics will make spacecraft design and operation simpler, more flexible, more reliable, lighter, and cheaper. Researchers at the NASA Glenn Research Center are evaluating potential commercial off-the- shelf devices and are developing new electronic components that will tolerate operation at low temperatures down to -233 C. This work is being carried out mainly inhouse and also through university grants and commercial contracts. The components include analog-to-digital converters, semiconductor switches, capacitors, dielectric and packaging material, and batteries. For example, the effect of low temperature on the capacitance of three different types of capacitors is shown in the graph. Using these advanced components, system products will be developed, including dc/dc converters, battery charge/discharge management systems, digital control electronics, transducers, and sensor instrumentation.

Description: Environmentally aged wire insulation can become brittle and crack and thus expose the underlying conductive wire to the potential for short circuits and fire. The feasibility of using ultrasonic guided waves to measure insulation condition was examined. First a simple model to study guided wave propagation in a bare and thin plastic coated wire was examined and then some aviation grade wire samples that had been heat-damaged. Initial measurements indicate that ultrasonic guided wave velocity can be used to monitor insulation stiffness.

Description: AEM Incorporated has completed the development, under a NASA Glenn Research Center contract, of a solid-body fuse for high-voltage power systems of satellites and spacecraft systems. High-reliability fuses presently defined by MIL-PRF-23419 do not meet the increased voltage and amperage requirements for the next generation of spacecraft. Solid-body fuses exhibit electrical and mechanical attributes that enable these fuses to perform reliably in the vacuum and high-vibration and -shock environments typically present in spacecraft applications. The construction and screening techniques for solid-body fuses described by MIL-PRF-23419/12 offer an excellent roadmap for the development of high-voltage solid-body fuses.

Description: This paper presents a new technique for implementing a low-power CMOS imager with simultaneous on-chip computation of the difference and sum of two successive frames.

Description: In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25.97 MeV-square cm/mg. This might be due to fact that the device is radiation hardened.

Description: Research conducted at Tuskegee University concentrates on electrical contacts to GaN films and their characterization with the objective of understanding contact formation and realizing low-resistance metal contacts. Contact properties are known to be strongly related to surface preparation. It appears that the as-received material had a thin oxide film on the surface of the GaN film. Various cleaning treatments were employed in order to render the surface contamination free and removal of the oxide film. Metal films were then deposited by e-beam evaporation. Electrical characteristics of these contacts indicated that the optimal treatment was an organic solvent cleaning followed by etching in buffered oxide solution. Contacts established with Al were observed to be ohmic in nature, whereas Au, Cr, Ti, and Pt exhibit rectifying contacts. Platinum contacts were almost ideal as shown by an ideality factor of 1.02.

Description: An all-optical micromotor with a rotor driven by a traveling wave of surface deformation of a stator being in contact with the rotor is being studied. Instead of an ultrasonic wave produced by an electrically driven piezoelectric actuator as in ultrasonic motors, the wave is a result of a photo-induced surface deformation of a photosensitive material produced by an incident radiation. A thin piezoelectric polymer will deform more easily LiNbO3 or metal when irradiated with light. The type of photosensitive material studied are piezoelectric polymers with and without coatings for connecting electrodes. In order to be considered as a possible candidate for micromotors, the material should exhibit surface deformation produced by a laser beam of the order of 10 microns. This is compared to the deformations produced by static holographic gratings studied in photorefractive crystals of LiNbO3 using high vertical resolution surface profilometer Dektak 3 and surface interferometer WYKO. An experimental setup showing the oscillations has been developed. The setup uses a chopped beam from an Argon ion laser to produce the deformation while a probe beam is reflected by the thin film into a fiber which is then detected on an oscilloscope. A ramp voltage signal generator will drive the piezoelectric film in another experiment to determine the resonance of the film. A current is generated when light is incident upon the film and this current can be measured. The reverse process has already been demonstrated in other piezoelectric actuators. Changing voltage, polarity, and frequency of the signal can easily generate vibrations similar to those when light is incident on the film. This can be compared to the effects of laser interaction with light absorbing fluids such as solutions of 2,9,16,23-Tetrakis(phenylthio)-29H, 31 H-phthalocyanine in chlorobenzene in capillary tubes, The possibility of using a liquid with the piezoelectric film would be a novel idea for a micromotor since the interaction of a single low power focused laser beam at 633 nm with such fluid produced an intensive circular motion.

Description: We describe a multilayered dielectric stack configuration designed specifically for use as a transmissive phase modulator for broadband optical signals. Applications for this device range from full aperture wavefront correction to nonmechanical beam steering arrays for free space optical communication links. Our implementation employs alternating GaAs and AlAs layers of varying thickness on a GaAs substrate to create a bandpass region of high average transmission centered about the one micrometer wavelength. Within this transmission bandpass, the phase component of the complex transmission coefficient varies in a near-linear fashion with respect to wavelength. The transmission bandpass is designed to have a bandwidth of 21.0 nm (or 6.3THz frequency bandwidth) and to have an edge-to-edge phase change of greater than 47T radians. Modification of the stack materials' optical properties causes the transmission profile to shift spectrally, resulting in a phase modulation for bands of transmitted frequencies. Our broadband phase modulator imparts up to a full-cycle of phase modulation with low loss and low group velocity dispersion. We identify several methods for implementing the requisite modulation, including refractive index modulation through free carrier injection and optical path length modulation through variation in angle of incidence. At least one sample comprising 91 alternating layers has been fabricated to exhibit the bandpass properties required for optical signal phase modulation. We experimentally characterize the sample using an interferometer and spectrometer to measure the transmitted signal spectrum and relative phase modulation. We compare the experimental data to computational predictions and discuss the results.

Description: Standard x-ray systems for crystallography rely on massive generators coupled with optics that guide X-ray beams onto the crystal sample. Optics for single-crystal diffractometry include total reflection mirrors, polycapillary optics or graded multilayer monochromators. The benefit of using polycapillary optic is that it can collect x-rays over tile greatest solid angle, and thus most efficiently, utilize the greatest portion of X-rays emitted from the Source, The x-ray generator has to have a small anode spot, and thus its size and power requirements can be substantially reduced We present the design and results from the first high flux x-ray system for crystallography that combine's a microfocus X-ray generator (40microns FWHM Spot size at a power of 45 W) and a collimating, polycapillary optic. Diffraction data collected from small test crystals with cell dimensions up to 160A (lysozyme and thaumatin) are of high quality. For example, diffraction data collected from a lysozyme crystal at RT yielded R=5.0% for data extending to 1.70A. We compare these results with measurements taken from standard crystallographic systems. Our current microfocus X-ray diffraction system is attractive for supporting crystal growth research in the standard crystallography laboratory as well as in remote, automated crystal growth laboratory. Its small volume, light-weight, and low power requirements are sufficient to have it installed in unique environments, i.e.. on-board International Space Station.

Description: As part of a pre-flight ground based investigation of crystal growth of II-VI compound semiconductors, a number of ZnSe boules have been grown by physical vapor transport (PVT) at Marshall Space Flight Center. Boules were grown in both horizontal and vertical configurations and seeded and self-seeded growth techniques were employed. As-grown and/or cleaved boules were examined by a combination of synchrotron white beam x-ray topography (SWBXT) and high resolution triple axis diffraction (HRTXD) to characterized the structural defects and correlate them with the growth conditions. Horizontal grown boules tend to grow away from the ampoule wall (contactless growth) and generally exhibit large (110) facets parallel to the gravity vector. Vertical grown boules grew to the full diameter of the ampoule and exhibited no faceting. X-ray topography combined with back reflection x-ray diffraction revealed the presence of lamellar twins (180 deg type about the [111] axis) in horizontal grown boules while vertically grown boules contain a few large grains, some of which are twinned. X-ray topographs and reciprocal space maps recorded from the boules show the better crystal quality of horizontal grown boules. The relationship between crystal quality and gravity vector is investigated. Further, an attempt is made to extend the Hurle theory of twin nucleation in Czochralski grown crystals to explain the twinning mechanisms in horizontal grown boules.

Description: We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on an equal footing. Electron bandstructure is treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are consistent with 1D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller leakage current than the longer gate length device without a significant trade-off in on-current.

Description: A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. T'he input and o Output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. No attempt was made to model the high frequency characteristics of the FFET. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.

Description: Three-dimensional circuits built upon multiple layers of polyimide are required for constructing SilSiGe monolithic microwavdmillimeter-wave integrated circuits on CMOS (low resistivity) Si wafers. However, the closely spaced transmission lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and measured characteristics of novel shielding structures that significantly reduce coupling between embedded microstrip lines are presented. A discussion of the electric and magnetic field distributions for the coupled microstrip lines is presented to provide a physical rationale for the presented results.

Description: ST5 mission requirements include validation of Lithium-ion battery in orbit. Accommodation in the power system for Li-ion battery can be reduced with smaller amp-hour size, highly matched cells when compared to the larger amp-hour size approach. Result can be lower system mass and increased reliability.

Description: In this paper, two second-generation high power density DC/DC converter modules have been evaluated at low operating temperatures. The power rating of one converter (Module 1) was specified at 150 W with an input voltage range of 36 to 75 V and output voltage of 12 V. The other converter (Module 2) was specified at 100 W with the same input voltage range and an output voltage of 3.3 V. The converter modules were evaluated in terms of their performance as a function of operating temperature in the range of 25 to -140 C. The experimental procedures along with the experimental data obtained are presented and discussed in this paper.

Description: In this paper, novel low loss, wide-band coplanar stripline technology for radio frequency (RF)/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth, and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semi-conductor devices and microelectromechanical systems (MEMS).

Description: Tnis paper will focus on developing an exotic switching technique that enhances the DC-to-RF conversion efficiency of microwave power amplifiers. For years, switching techniques implemented in the 10 kHz to 30 MHz region have resulted in DC-to-RF conversion efficiencies of 90-95-percent. Currently amplifier conversion efficiency, in the 2-3 GHz region approaches, 10-20-percent. Using a combination of analytical modeling and hardware testing, a High Efficiency Microwave Power Amplifier was built that demonstrated conversion efficiencies four to five times higher than current state of the art.

Description: Summary form only given. The Terahertz (THz) region of the electromagnetic spectrum (approx.300-3000 GHz) has enormous potential for high-data-rate communications, spectroscopy, astronomy, space research, medicine, biology, surveillance, remote sensing, industrial process control, etc. The most critical roadblock to full exploitation of the THz band is lack of coherent radiation sources that are powerful (0.01-10.0 W continuous wave), efficient (〉1 %), frequency agile (instantaneously tunable over 1% bandwidths or more), reliable, and relatively inexpensive. Micro-machined Vacuum Electron Devices (micro-VEDs) represent a promising solution. We describe prospects for miniature, THz-regime TWTs fabricated using micromachining techniques. Several approx.600 GHz conceptual designs are compared. Their expected performance has been analyzed using SD, 2.51), and 3D TWT codes. A folded waveguide (FWG) TWT forward-wave amplifier design is presented based on a Northrop Grumman (NGC) optimized design procedure. This conceptual device is compared to the simulated performance of a novel, micro-VED helix TWT. Conceptual FWG TWT backward-wave amplifiers and oscillators are also discussed. A scaled (100 GHz) FWG TWT operating at a relatively low voltage (-12 kV) is under development at NGC. Also, actual-size micromachining experiments are planned to evaluate the feasibility of arrays of micro-VED TWTs. Progress and results of these efforts are described. This work was supported, in part by AFOSR, ONR, and NSF.

Description: The continual scaling down of semiconductors to 100 nm and below necessitates a characterization technique to resolve high aspect ratio features in the nanoscale regime. This paper reports the use of atomic force microscope coupled with high aspect ratio multi-walled carbon nanotube scanning probe tip for the purpose of imaging surface profile of photoresists. Multi-walled carbon nanotube tips used in this work are 5-10 nm in diameter and about a micron long. Their exceptional mechanical strength and ability to reversibly buckle enable to resolve steep, deep nanometer-scale features. Images of photoresist patterns generated by 257 nm interference lithography as well as 193 nm lithography are presented to demonstrate multi-walled carbon nanotube scanning probe tip for applications in metrology.

Description: With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Description: The NASA Ames Research Center 60 MW DC Power Supply was built in 1974 to provide controlled DC power for the Thermophysics Facility Arc Jet Laboratory. The Power Supply has gradually losing reliability due to outdated technology and component life limitation. NASA has decided to upgrade the existing rectifier modules with contemporary high-power electronics and control equipment. NASA plans to complete this project in 2001. This project includes a complete replacement of obsolete thyristor stacks in all six rectifier modules and rectifier bridge control system. High power water-cooled thyristors and freewheeling diodes will be used. The rating of each of the six modules will be 4000 A at 5500 V. The control firing angle signal will be sent from the Facility Control System to six modules via fiberoptic cable. The Power Supply control and monitoring system will include a Master PLC in the Facility building and a Slave PLC in each rectifier module. This system will also monitor each thyristor level in each stack and the auxiliary equipment.

Description: Traveling-wave photomixers have superior performance when compared with lumped area photomixers in the 1 to 3 THz frequency range. Their large active area and distributed gain mechanism assure high thermal damage threshold and elimination of the capacitive frequency roll-off. However, the losses experienced by the radio frequency wave traveling along the coplanar strips waveguide (due to underlying semi-infinite GaAs substrate) were a serious drawback. In this paper we present device designs and an experimental setup that make possible the realization of photomixers on membranes which eliminate the losses.

Description: The electric field distribution in photomixers with electrodes deposited on the surface has already been calculated. It was shown that the strength of the electric field diminishes rapidly with depth. It was argued that the resulting reduction of the effective interaction volume of the device lowers the optical-to-heterodyne conversion. In this paper, we will present the results of our investigation on the influence of the electrode placement on the performance of photomixers. We have fabricated and measured traveling-wave photomixer devices which have both embedded and surface electrodes - the nominal spacing between the electrodes was 2 micrometers. Devices were made using either low-temperature-grown (LTG)-GaAs or ErAs:GaAs as the photoconductive material. The dark current, photocurrent, and radio frequency (RF) emission were measured at nominally 1 THz. The experimental data show a surprising difference in the behavior of ErAs:GaAs devices when the electrodes are embedded. A factor of two increase in RF radiation is observed for electric fields 〈 20 kV/cm. No such improvement was observed for the LTG-GaAs devices. We argue that the distinctive behavior of the two photoconductive materials is due to differences in the crystal structure - LTG-GaAs is isotropic, while ErAs:GaAs is uniaxial. We find that the carrier mobility in-plane (parallel) to the ErAs layers in the ErAs:GaAs superlattice is larger than orthogonal to these layers. The data indicate that carrier velocity overshoot is responsible for the excess radiation produced for the embedded electrode ErAs:GaAs devices.

Description: A model is proposed for the recent gate-voltage (V(sub G)) modulation experiment of a kink-shaped carbon nanotube (NT) Schottky diode. Since larger V(sub G) increases both the forward and the reverse turn-on voltages of the diode in the experiment, we show that: (1) the rectification must occur at the kink where the metallic and the semiconducting NTs meet, and not at the electrode contact, and (2) the semiconducting NT must be n-type. The turn-on voltages are derived analytically as a function of V(sub G) with the electrode contact contribution and a good agreement is obtained with the experimental data.

Description: NASA has a need for lightweight high performance magnets to be used in propulsion systems involving plasmas. We report the design, construction, and testing of a six inch diameter by twelve inch long solenoid using high purity aluminum wire operating at a temperature of 77 Kelvin (K) for the current carrying element. High purity aluminum is the material of choice because of three properties that make it optimal for magnetic construction. At 77 K high purity aluminum has one of the lowest resistivities at 77 K of any metal (p = 0.254 muOMEGA-cm), thus reducing the power requirements for creating magnetic fields. Aluminum is a low-density (2.6989 g/cc) material and the end product magnet will be of low total mass compared to similar designs involving copper or other elements. The magneto-resistance of aluminum saturates at low magnetic fields and does not increase indefinitely as is the case in copper. The magnet consists of four layers of closely wound wire and is approximately 150 mm in diameter by 300 mm long. A cylinder made from G - 10 was machined with a spiral groove to hold the high purity Al wire and the wire wound on it. Following the winding, each layer was potted in STYCAST high thermal conductivity epoxy to provide insulation between the turns of the coil and mechanical strength. The magneto-resistance of the coil has been measured at the National High Magnetic Field Laboratory (NHMFL), Tallahassee, FL in externally applied fields to 10 tesla. Following these tests it was energized to the full 2 tesla field it can produce using the facilities of the NHMFL at the Los Alamos National Laboratory. The results of all of these tests will be presented.

Description: A micromachined magnetostatic relay or switch includes a springing beam on which a magnetic actuation plate is formed. The springing beam also includes an electrically conductive contact. In the presence of a magnetic field, the magnetic material causes the springing beam to bend, moving the electrically conductive contact either toward or away from another contact, and thus creating either an electrical short-circuit or an electrical open-circuit. The switch is fabricated from silicon substrates and is particularly useful in forming a MEMs commutation and control circuit for a miniaturized DC motor.

Description: While experimental studies of kinetic-inductance sensors have been limited so far by the temperature range near the superconducting transition, these detectors can be very sensitivity at temperatures well below the transition, where the number of equilibrium quasiparticles is exponentially small. In this regime, a shift of the quasiparticle chemical potential under radiation results in the change of the kinetic inductance, which can be measured by a sensitive SQUID readout. We modeled the kinetic inductance response of detectors made from disordered superconducting Nb, NbC, and MoRe films. Low phonon transparency of the interface between the superconductor and the substrate causes substantial re-trapping of phonons providing high quantum efficiency and the operating time of approximately 1 ms at 1 K. Due to the small number of quasiparticles, the noise equivalent power of the detector determined by the quasiparticle generation-recombination noise can be as small as approximately 10(exp -19) W/Hz(exp 1/2) at He4 temperatures.

Description: Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.

Description: Fabrication technology for submillimeter-wave monolithic circuits has made tremendous progress in recent years and it is now possible to fabricate sub-micron GaAs Schottky devices on a number of substrate types, such as membranes, frame-less membranes or substrateless circuits. These new technologies allow designers to implement very high frequency circuits, either Schottky mixers or multipliers, in a radically new manner. This paper will address the design, fabrication, and preliminary results of a 1.2 THz planar tripler fabricated on a GaAs frame-less membrane, the concept of which was described previously. The tripler uses a diode pair in an antiparallel configuration similar to designs used at lower frequency. To date, this tripler has produced a peak output power of 80 microW with 0.9% efficiency at room temperature (at 1126 GHz). The measured fix-tuned 3 dB bandwidth is about 3.5%. When cooled, the output power reached a peak of 195 microW at 120 K and 250 microW at 50 K. The ease with which this circuit was implemented along with the superb achieved performance indicates that properly designed planar devices such as this tripler can now usher in a new era of practical very high frequency multipliers.

Description: The 2000 solar cell calibration balloon flight campaign consisted of two flights, which occurred on June 27, 2000, and July 5, 2000. All objectives of the flight program were met. Sixty-two modules were carried to an altitude of approximately 120,000 ft (36.6 km). Full I-V curves were measured on sixteen of these modules, and output at a fixed load was measured on thirty-seven modules (forty-six cells), with some modules repeated on the second flight. Nine modules were flown for temperature measurement only. This data was corrected to 28 C and to 1 AU (1.496x10(exp 8) km). The calibrated cells have been returned to their owners and can now be used as reference standards in simulator testing of cells and arrays.

Description: Conjugated electro-active polymers find their potential applications in developing variety inexpensive and flexible shaped electronic and photonic devices, such as photovoltaic or photo/electro light emitting devices. In many of these opto-electronic polymeric materials, certain electron rich donors and electron deficient acceptors are needed in order to fine-tune the electronic or photonic properties of the desired materials and structures. While many donor type of conjugated polymers have been widely studied and developed in the past decades, there are relatively fewer acceptor type of conjugated polymers have been developed. Key acceptor type conjugated polymers developed so far include C60 and CN-PPV, and each has its limitations. Due to the complexity and diversity of variety future electronic materials and structural needs, alternative and synthetically amenable acceptor conjugated polymers need to be developed. In this paper, we present the synthesis and characterization of a new acceptor conjugated polymer, a sulfone derivatized polyphenylenevinylene "SF-PPV".

Description: This letter reports the miniaturization of a planar Wilkinson power divider by capacitive loading of the quarter wave transmission lines employed in conventional Wilkinson power dividers. Reduction of the transmission line segments from lambda/4 to between lambda/5 and lambda/12 are reported here. The input and output lines at the three ports and the lines comprising the divider itself are coplanar waveguide (CPW) and asymmetric coplanar stripline (ACPS), respectively. The 10 GHZ power dividers are fabricated on high resistivity silicon (HRS) and alumina wafers. These miniaturized dividers are 74% smaller than conventional Wilkinson power dividers, and have a return loss better than +30 dB and an insertion loss less than 0.55 dB. Design equations and a discussion about the effect of parasitic reactance on the isolation are presented for the first time.

Description: The general purpose of the invention is to develop a high specific energy nickel electrode for a nickel based battery system. The invention discloses a method of producing a lightweight nickel electrode which can be cycled to deep depths of discharge (i.e., 40% or greater of electrode capacity). These deep depths of discharge can be accomplished by depositing the required amount of nickel hydroxide active material into a lightweight nickel fiber substrate.

Description: This paper describes the implementation of mode-stirred method for susceptibility testing according to the current DO-160D standard. Test results on an Engine Data Processor using the implemented procedure and the comparisons with the standard anechoic test results are presented. The comparison experimentally shows that the susceptibility thresholds found in mode-stirred method are consistently higher than anechoic. This is consistent with the recent statistical analysis finding by NIST that the current calibration procedure overstates field strength by a fixed amount. Once the test results are adjusted for this value, the comparisons with the anechoic results are excellent. The results also show that test method has excellent chamber to chamber repeatability. Several areas for improvements to the current procedure are also identified and implemented.

Description: NeFeB type magnets have been proposed for use in free piston Stirling engine driven, linear alternators to generate electric power during long duration space missions. These type of materials provide the highest energy product commercial magnets, thus minimizing alternator size or mass, but do not provide the high temperature stability of magnetic properties found in the SmCo type magnets. Therefore, to apply the NeFeB type magnets at elevated temperatures to multiyear space missions, their long-term aging characteristics must be determined. This report presents 200 hr aging data for six types of NeFeB magnets selected from three manufacturers. Aging was performed under vacuum at 150 C, with a steady demagnetizing field of 5 kOe applied. From the data produced by this short-term aging run, candidate magnet types were selected for a planned 12,000 hr long-term run. Depending on the manufacturer's magnet type, remanence losses observed ranged from 0 to 7%, when measured at 120 C on an established recoil line. Also, intrinsic coercivity losses up to about 4% were observed for the M-H curve at 120 C. In some cases, these coercivity losses were not recoverable by recharge of the magnet, indicating a structural change of the material.

Description: A compilation of data on personal electronic devices (PEDs) attributed to having created anomalies with aircraft systems. Charts and tables display 14 years of incidents reported by pilots to the Aviation Safety Reporting System (ASRS). Affected systems, incident severity, sources of anomaly detection, and the most frequently identified PEDs are some of the more significant data. Several reports contain incidents of aircraft off course when all systems indicated on course and of critical events that occurred during landings and takeoffs. Additionally, PEDs that should receive priority in testing are identified.

Description: The attached documents are being provided to Switching Power Magazine for information purposes. This magazine is writing a feature article on the International Space Station Electrical Power System, focusing on the switching power processors. These units include the DC-DC Converter Unit (DDCU), the Bi-directional Charge/Discharge Unit (BCDU), and the Sequential Shunt Unit (SSU). These diagrams are high-level schematics/block diagrams depicting the overall functionality of each unit.

Description: An apparatus for and method of eliminating single event upsets (or SEU) in combinational logic are used to prevent error propagation as a result of cosmic particle strikes to the combinational logic. The apparatus preferably includes a combinational logic block electrically coupled to a delay element, a latch and an output buffer. In operation, a signal from the combinational logic is electrically coupled to a first input of the latch. In addition, the signal is routed through the delay element to produce a delayed signal. The delayed signal is routed to a second input of the latch. The latch used in the apparatus for preventing SEU preferably includes latch outputs and a feature that the latch outputs will not change state unless both latch inputs are correct. For example, the latch outputs may not change state unless both latch inputs have the same logical state. When a cosmic particle strikes the combinational logic, a transient disturbance with a predetermined length may appear in the signal. However, a function of the delay element is to preferably provide a time delay greater than the length of the transient disturbance. Therefore, the transient disturbance will not reach both latch inputs simultaneously. As a result, the latch outputs will not permanently change state in error due to the transient disturbance. In addition, the output buffer preferably combines the latch outputs in such a way that the correct state is preserved at all times. Thus, combinational logic with protection from SEU is provided.

Description: The objectives are to: (1) Verify the Performance of AEA Cell Bypass Protection Device (CBPD) under simulated EOS-Aqua/Aura flight hardware configuration; (2) Assess the Safety of the hardware under an inadvertent firing of CBPD switch, as well as the closing of CBPD switch under simulated high cell impedance; and (3) Confirm that the mode of operation of CBPD switch is the formation of a continuous low impedance path (a homogeneous low melting point alloy).

Description: A power supply for a quadrupole mass spectrometer which operates using an RF signal. The RF signal is controllable via a feedback loop. The feedback loop is from the output, through a comparator, and compared to a digital signal. An air core transformer is used to minimize the weight. The air core transformer is driven via two out of phase sawtooth signals which drive opposite ends of the transformer.

Description: A three-dimensional connection system uses a plurality of printed wiring boards with connectors completely around the printed wiring boards, and connected by an elastomeric interface connector. The device includes internal space to allow room for circuitry. The device is formed by stacking an electronics module, an elastomeric interface board on the electronics module such that the interface board's exterior makes electrical connection with the connectors around the perimeter of the interface board, but the internal portion is open to allow room for the electrical devices on the printed wiring board. A plurality of these devices are stacked between a top stiffener and a bottom device, and held into place by alignment elements.

Description: A current determiner having an output at which representations of input currents are provided having an input conductor for the input current and a current sensor supported on a substrate electrically isolated from one another but with the sensor positioned in the magnetic fields arising about the input conductor due to any input currents. The sensor extends along the substrate in a direction primarily perpendicular to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers separated by a non-magnetic conductive layer. The sensor can be electrically connected to electronic circuitry formed in the substrate including a nonlinearity adaptation circuit to provide representations of the input currents of increased accuracy despite nonlinearities in the current sensor, and can include further current sensors in bridge circuits.

Description: In an integrated electron tunneling sensor, an automatic tunneling control circuit varies a high voltage bias applied to the sensor deflection electrode in response to changes in sensor output to maintain the proper gap between the sensor tip and membrane. The control circuit ensures stable tunneling activity in the presence of large signals and other disturbances to the sensor. Output signals from the module may be derived from the amplified sensor output. The integrated sensor module is particularly well adapted for use in blood glucose measurement and monitoring system.

Description: Preliminary screening tests of field emission cathodes such as chemical vapor deposited (CVD) diamond, textured pyrolytic graphite, and textured copper were conducted at background pressures typical of electric thruster test facilities to assess cathode performance and stability. Very low power electric thrusters which provide tens to hundreds micronewtons of thrust may need field emission neutralizers that have a capability of tens to hundreds of microamperes. From current voltage characteristics, it was found that the CVD diamond and textured metals cathodes clearly satisfied the Fowler-Nordheim emission relation. The CVD diamond and a textured copper cathode had average current densities of 270 and 380 mA/sq cm, respectively, at the beginning-of-life. After a few hours of operation the cathode emission currents degraded by 40 to 75% at background pressures in the 10(exp -5) Pa to 10(exp -4) Pa range. The textured pyrolytic graphite had a modest current density at beginning-of-life of 84 mA/sq cm, but this cathode was the most stable of all. Extended testing of the most promising cathodes is warranted to determine if current degradation is a burn-in effect or whether it is a long-term degradation process. Preliminary experiments with ferroelectric emission cathodes, which are ceramics with spontaneous electric polarization, were conducted. Peak current densities of 30 to 120 mA/sq cm were obtained for pulse durations of about 500 ns in the 10(exp -4) Pa pressure range.

Description: The 200-micrometer to 3-mm wavelength range has great astronomical and cosmological significance. Science goals include characterization of the cosmic microwave background, measurement of the Sunyaev-Zel'dovich effect in galaxy clusters, and observations of forming galaxies. Cryogenic bolometers are the most sensitive broadband detectors in this frequency range. Because single bolometer pixels are reaching the photon noise limit for many observations, the development of large arrays will be critical for future science progress. Voltage-biased superconducting bolometers (VSBs) have several advantages compared to other cryogenic bolometers. Their strong negative electrothermal feedback enhances their linearity, speed, and stability. The large noise margin of the SQUID readout enables multiplexed readout schemes, which are necessary for developing large arrays. In this paper, we discuss the development of a large absorber-coupled array, a frequency-domain SQUID readout multiplexer, and an antenna-coupled VSB design.

Description: Heterodyne spectroscopy has been taken to wavelengths as short as 63 micrometers with Schottky-diode mixers. Schottkys, however, are relatively insensitive compared to superconducting mixers such as the hot-electron microbolometer (HEB), which has an effective quantum efficiency of 3% at 120 micrometers (2.5 THz). Although HEB sensitivities are bound to improve, there will always be losses associated with antenna coupling of radiation into sub-micron size devices. Another approach to far infrared (FIR) mixer design is to use a photoconductive device which can be made much larger than a wavelength, and thus act as its own antenna. For example, HgCdTe photodiodes have been used as mixers in the lambda = 10 micrometers band for over 25 years, with sensitivities now only a factor of 2 from the quantum-noise-limit. HgCdTe can also be applied at FIR wavelengths, but surprisingly little work has been done to date. The exception is the pioneering work of Spears and Kostiuk and Spears, who developed HgCdTe photomixers for the 20-120 micrometer region. The spectral versatility of the HgCdTe alloy is well recognized for wavelengths as long as 8-20 micrometers. What is not so recognized, however, is that theoretically there is no long wavelength limit for appropriately composited HgCdTe. Although Spears successfully demonstrated a photoconductive response from HgCdTe at 120 micrometers, this initial effort was apparently never followed up, in part because of the difficulty of controlling the HgCdTe alloy composition with liquid-phase-epitaxy (LPE) techniques. With the availability of precise molecular-beam-epitaxy (MBE) since the early 1990's, it is now appropriate to reconsider HgCdTe for detector applications longward of lambda = 20 micrometers. We recently initiated an effort to fabricate detectors and mixers using II-VI materials for FIR wavelengths. Of particular interest are device structures called superlattices, which offer a number of advantages for high sensitivity direct detectors and very long wavelength heterodyne mixers.

Description: The main purpose of this work is to study the effect of a selectively etched ferroelectric thin film layer on the performance of an electrically tunable filter. An X-band tunable filter was designed, fabricated and tested on a selectively etched Barium Strontium Titanate (BSTO) ferroelectric thin film layer. Tunable filters with varying lengths of BSTO thin-film in the input and output coupling gaps were modeled, as well as experimentally tested. Experimental results showed that filters with coupling gaps partially filled with BSTO maintained frequency tunability and improved the insertion loss by approx. 2dB. To the best of our knowledge, these results represent the first experimental demonstration of the advantages of selective etching in the performance of thin film ferroelectric-based tunable microwave components.

Description: A power divider divides an RF signal into two output signals having a phase difference of 180 deg. or a multiple thereof. When the RF signal is a square wave or another harmonically rich signal. the phases of the fundamental and the harmonics have the proper relationship. The divider can be implemented in the form of microstrips on a board, with one of the output microstrips having several bends to provide a different electrical length from the other.

Description: Method and apparatus are provided for a microstrip feeder structure for supplying properly phased signals to each radiator element in a microstrip antenna array that may be utilized for radiating circularly polarized electromagnetic waves. In one disclosed embodiment. the microstrip feeder structure includes a plurality of microstrip sections many or all of which preferably have an electrical length substantially equal to one-quarter wavelength at the antenna operating frequency. The feeder structure provides a low loss feed structure that may be duplicated multiple times through a set of rotations and translations to provide a radiating array of the desired size.

Description: The invention is a circuit and method of limiting the charging current voltage from a power supply net work applied to an individual cell of a plurality of cells making up a battery being charged in series. It is particularly designed for use with batteries that can be damaged by overcharging, such as Lithium-ion type batteries. In detail. the method includes the following steps: 1) sensing the actual voltage level of the individual cell; 2) comparing the actual voltage level of the individual cell with a reference value and providing an error signal representative thereof; and 3) by-passing the charging current around individual cell necessary to keep the individual cell voltage level generally equal a specific voltage level while continuing to charge the remaining cells. Preferably this is accomplished by by-passing the charging current around the individual cell if said actual voltage level is above the specific voltage level and allowing the charging current to the individual cell if the actual voltage level is equal or less than the specific voltage level. In the step of bypassing the charging current, the by-passed current is transferred at a proper voltage level to the power supply. The by-pass circuit a voltage comparison circuit is used to compare the actual voltage level of the individual cell with a reference value and to provide an error signal representative thereof. A third circuit, designed to be responsive to the error signal, is provided for maintaining the individual cell voltage level generally equal to the specific voltage level. Circuitry is provided in the third circuit for bypassing charging current around the individual cell if the actual voltage level is above the specific voltage level and transfers the excess charging current to the power supply net work. The circuitry also allows charging of the individual cell if the actual voltage level is equal or less than the specific voltage level.

Description: A configurable service processor for telemetry ground stations is totally implemented in VLSI/ASIC hardware and finds use in spacecraft systems and other communications systems that operate according to CCSDS and CCSDS-like protocols. The service processor performs the traditional functions of data extraction at very high data and packet rates.

Description: A method to demodulate BPSK or QPSK data using clock rates for the receiver demodulator of one-fourth the data rate is presented. This is accomplished through multirate digital signal processing techniques. The data is sampled with an analog-to-digital converter and then converted from a serial data stream to a parallel data stream. This signal processing requires a clock cycle four times the data rate. Once converted into a parallel data stream, the demodulation operations including complex baseband mixing, lowpass filtering, detection filtering, symbol-timing recovery, and carrier recovery are all accomplished at a rate one-fourth the data rate. The clock cycle required is one-sixteenth that required by a traditional serial receiver based on straight convolution. The high rate data demodulator will demodulate BPSK, QPSK, UQPSK, and DQPSK with data rates ranging from 10 Mega-symbols to more than 300 Mega-symbols per second. This method requires less clock cycles per symbol tan traditional serial convolution techniques.

Description: The invention involves a method for locating the probe of a scanning tunneling micrograph a predetermined distance from its conducting surface, and specifically the deposition of a monolayer of fullerene C60 onto the conducting plate. The Fullerene C60 molecule is approximately spherical and a monolayer of fullerene has a thickness of one nanometer. By providing a monolayer of fullerene on the conducting surface and locating the probe on the surface of the monolayer, a distance of one nanometer can be established between the probe tip and the conducting surface.

Description: The fundamental question of how chirality affects tile electronic coupling of a nanotube to metal contacts is important for tile application of nanotubes as nanowires. We show that metallic-zigzag nanotubes are superior to armchair nanotubes as nanowires, by modeling the metal-nanotube interface. More specifically, we show that as a function of coupling strength, the total electron transmission of armchair nanotubes increases and tends to be pinned close to unity for a metal with Fermi wave vector close to that of gold. In contrast, the transmission probability of zigzag nanotubes increases to the maximum possible value of two. The origin of these effects lies in the details of the wave function, which is explained.

Description: We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy-ion induced single-event effects and proton-induced damage. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog-to-Digital Converters (ADCs), Digital-to-Analog Converters (DACs), and DC-DC converters, among others.

Description: This report presents a comparative study on Enhanced Feher's Quadrature Phase Shift Keying (EFQPSK) and Constrained Envelope Root Nyquist (CERN) techniques. These two techniques have been developed in recent times to provide high spectral and power efficiencies under nonlinear amplifier environment. The purpose of this study is to gain insights into these techniques and to help system planners and designers with an appropriate set of guidelines for using these techniques. The comparative study presented in this report relies on effective simulation models and procedures. Therefore, a significant part of this report is devoted to understanding the mathematical and simulation models of the techniques and their set-up procedures. In particular, mathematical models of EFQPSK and CERN, effects of the sampling rate in discrete time signal representation, and modeling of nonlinear amplifiers and predistorters have been considered in detail. The results of this study show that both EFQPSK and CERN signals provide spectrally efficient communications compared to filtered conventional linear modulation techniques when a nonlinear power amplifier is used. However, there are important differences. The spectral efficiency of CERN signals, with a small amount of input backoff, is significantly better than that of EFQPSK signals if the nonlinear amplifier is an ideal clipper. However, to achieve such spectral efficiencies with a practical nonlinear amplifier, CERN processing requires a predistorter which effectively translates the amplifier's characteristics close to those of an ideal clipper. Thus, the spectral performance of CERN signals strongly depends on the predistorter. EFQPSK signals, on the other hand, do not need such predistorters since their spectra are almost unaffected by the nonlinear amplifier, Ibis report discusses several receiver structures for EFQPSK signals. It is observed that optimal receiver structures can be realized for both coded and uncoded EFQPSK signals with not too much increase in computational complexity. When a nonlinear amplifier is used, the bit error rate (BER) performance of the CERN signals with a matched filter receiver is found to be more than one decibel (dB) worse compared to the bit error performance of EFQPSK signals. Although channel coding is found to provide BER performance improvement for both EFQPSK and CERN signals, the performance of EFQPSK signals remains better than that of CERN. Optimal receiver structures for CERN signals with nonlinear equalization is left as a possible future work. Based on the numerical results, it is concluded that, in nonlinear channels, CERN processing leads towards better bandwidth efficiency with a compromise in power efficiency. Hence for bandwidth efficient communications needs, CERN is a good solution provided effective adaptive predistorters can be realized. On the other hand, EFQPSK signals provide a good power efficient solution with a compromise in band width efficiency.