ALBERT

Description: In this contribution, we present a highly accurate approach for thickness measurements of multi-layered automotive paints using terahertz time domain spectroscopy in reflection geometry. The proposed method combines the benefits of a model-based material parameters extraction method to calibrate the paint coatings, a generalized Rouard's method to simulate the terahertz radiation behavior within arbitrary thin films, and the robustness of a powerful evolutionary optimization algorithm to increase the sensitivity of the minimum thickness measurement limit. Within the framework of this work, a self-calibration model is introduced, which takes into consideration the real industrial challenges such as the effect of wet-on-wet spray in the painting process.

Description: Based on electromagnetic scattering theory, a model of superscatterer enhanced distant wireless power transfer (WPT) device has designed and analyzed with the concept of transformation optics. The numerical results obtained through a series expansion method reveal that a properly designed ss-WPT has high efficiency for long transfer distances as well as a wide transfer range. The transfer distance can be further enlarged by fine tuning of the design. These effects can be explained qualitatively through the study of magnetic flux.

Description: In this work, we report enhanced power conversion efficiency (PCE) of bulk heterojunction polymer solar cells by Förster resonance energy transfer (FRET) from samarium-doped luminescent gadolinium orthovanadate (GdVO 4 :Sm 3+ ) quantum dots (QDs) to polythieno[3,4-b]-thiophene-co-benzodithiophene (PTB7) polymer. The photoluminescence emission spectrum of GdVO 4 :Sm 3+ QDs overlaps with the absorption spectrum of PTB7, leading to FRET from GdVO 4 :Sm 3+ to PTB7, and significant enhancements in the charge-carrier density of excited and polaronic states of PTB7 are observed. This was confirmed by means of femtosecond transient absorption spectroscopy. The FRET from GdVO 4 :Sm 3+ QDs to PTB7 led to a remarkable increase in the power conversion efficiency (PCE) of PTB7:GdVO 4 :Sm 3+ :PC 71 BM ([6,6]-phenyl-C 71 -butyric acid methyl ester) polymer solar cells. The PCE in optimized ternary blend PTB7:GdVO 4 :Sm 3+ :PC 71 BM (1:0.1:1.5) is increased to 8.8% from 7.2% in PTB7:PC 71 BM. This work demonstrates the potential of rare-earth based luminescent QDs in enhancing the PCE of polymer solar cells.

Description: We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO 2 /vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO 2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current density as high as 1  μ A/ μ m between graphene flakes. These findings are important for the miniaturization of atomically thin devices.

Description: The nanoscale resistive switching in hafnium oxide stack is investigated by the conductive atomic force microscopy (C-AFM). The initial oxide stack is insulating and electrical stress from the C-AFM tip induces nanometric conductive filaments. Multimode resistive switching can be observed in consecutive operation cycles at one spot. The different modes are interpreted in the framework of a low defect quantum point contact theory. The model implies that the optimization of the conductive filament active region is crucial for the future application of nanoscale resistive switching devices.

Description: We report on the fabrication and characterization of a Schottky diode made using 2D germanane (hydrogenated germanene). When compared to germanium, the 2D structure has higher electron mobility, an optimal band-gap, and exceptional stability making germanane an outstanding candidate for a variety of opto-electronic devices. One-atom-thick sheets of hydrogenated puckered germanium atoms have been synthesized from a CaGe 2 framework via intercalation and characterized by XRD, Raman, and FTIR techniques. The material was then used to fabricate Schottky diodes by suspending the germanane in benzonitrile and drop-casting it onto interdigitated metal electrodes. The devices demonstrate significant rectifying behavior and the outstanding potential of this material.

Description: High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

Description: Ion implantation of Zn substituting elements in ZnO has been shown to result in a dramatic Li depletion of several microns in hydrothermally grown ZnO. This has been ascribed to a burst of mobile Zn interstials. In this study, we seek to understand the reason behind this interstitial mediated transient enhanced diffusion in Li-containing ZnO samples after Zn implantation. ZnO wafers were implanted with Zn to two doses, 5 × 10 15  cm −2 and 1 × 10 17  cm −2 . Secondary ion mass spectrometry was carried out to profile the Li depletion depth for different annealing temperatures between 600 and 800 °C. The 800 °C annealing had the most significant Li depletion of close to 60  μ m. Transmission electron microscopy (TEM) was carried out in selected samples to identify the reason behind the Li depletion. In particular, TEM investigations of samples annealed at 750 °C show significant Zn precipitation just below the depth of the projected range of the implanted ions. We propose that the Zn precipitation is indicative of Zn supersaturation. Both the Li depletion and Zn precipitation are competing synchronous processes aimed at reducing the excess Zn interstitials.

Description: In this letter, we investigate the origin of the spatial inhomogeneity of the photoluminescence (PL) intensity maps obtained on thin-film solar cells. Based on a hyperspectral imager setup, we record an absolute map of the quasi-Fermi level splitting Δμ by applying the generalized Planck's law. Then, using scanning confocal microscopy, we perform spatially and time-resolved photoluminescence measurements. This allowed us to quantify and map the micrometric fluctuations of the trapping defect density within these solar cells. Finally, we demonstrate the existence of a direct correlation between the spatial fluctuations of the quasi-Fermi level splitting and the trapping defect density. The latter was found to be correlated with the frequently reported spatially inhomogeneous PL maps of thin-film solar cells. Based on the observed correlation, we can quantify the local losses in quasi-Fermi level splitting induced by the spatial distribution of the trapping defects.

Description: Nonlinear ultrasonic Lamb waves are popular to characterize the nonlinearity of materials. However, the widely used nonlinear Lamb mode suffers from two associated complications: inherent dispersive and multimode natures. To overcome these, the symmetric Lamb mode (S0) at low frequency region is explored. At the low frequency region, the S0 mode is little dispersive and easy to generate. However, the secondary mode still exists, and increases linearly for significant distance. Numerical simulations and experiments are used to validate the nonlinear features and therefore demonstrate an easy alternative for nonlinear Lamb wave applications.

Description: Dynamic deposition of silicon nitrides using in-line plasma enhanced chemical vapor deposition systems results in non-uniform structure of the dielectric layer. Appropriate analysis of such layers requires the optical characterization to be performed as a function of the layer's depth. This work presents a method to characterize dynamically deposited silicon nitride layers. The method is based on the fitting of experimental spectroscopic ellipsometry data via grading of Tauc–Lorentz optical parameters through the depth of the layer. When compared with the standard Tauc–Lorentz fitting procedure, used in previous studies, the improved method is demonstrating better quality fits to the experimental data and revealing more accurate optical properties of the dielectric layers. The most significant advantage of the method is the ability to extract the depth profile of the optical properties along the direction of the layer normal. This is enabling a better understanding of layers deposited using dynamic plasma enhanced chemical vapor deposition systems frequently used in the photovoltaic industry.

Description: The 120-nm-thick cobalt-doped ZnO (Co-doped ZnO, CZO) dilute magnetic films deposited by pulsed laser deposition were employed as the n-electrodes for both lateral-type blue (450 nm) and green (520 nm) InGaN light emitters. In comparison to the conventional blue and green emitters, there were 15.9% and 17.7% enhancements in the output power (@350 mA) after fabricating the CZO n-electrode on the n-GaN layer. Observations on the role of CZO n-electrodes in efficiency improvement of InGaN light emitters were performed. Based on the results of Hall measurements, the carrier mobilities were 176 and 141 cm 2 /V s when the electrons passed through the n-GaN and the patterned-CZO/n-GaN, respectively. By incorporating the CZO n-electrode into the InGaN light emitters, the electrons would be scattered because of the collisions between the magnetic atoms and the electrons as the device is driven, leading to the reduction of the electron mobility. Therefore, the excessively large mobility difference between electron and hole carriers occurred in the conventional InGaN light emitter can be efficiently decreased after preparing the CZO n-electrode on the n-GaN layer, resulting in the increment of carrier recombination rate and the improvement of light output power.

Description: An aerodynamic levitator with carbon dioxide laser beam heating was integrated with a hermetically sealed controlled atmosphere chamber and sample handling mechanism. The system enabled containment of radioactive samples and control of the process atmosphere chemistry. The chamber was typically operated at a pressure of approximately 0.9 bars to ensure containment of the materials being processed. Samples 2.5-3 mm in diameter were levitated in flowing gas to achieve containerless conditions. Levitated samples were heated to temperatures of up to 3500 °C with a partially focused carbon dioxide laser beam. Sample temperature was measured using an optical pyrometer. The sample environment was integrated with a high energy (100 keV) x-ray synchrotron beamline to enable in situ structure measurements to be made on levitated samples as they were heated, melted, and supercooled. The system was controlled from outside the x-ray beamline hutch by using a LabVIEW program. Measurements have been made on hot solid and molten uranium dioxide and binary uranium dioxide-zirconium dioxide compositions.

Description: We have developed an optical Absolute Distance Meter (ADM) based on the measurement of the phase accumulated by a Radio Frequency wave during its propagation in the air by a laser beam. In this article, the ADM principle will be described and the main results will be presented. In particular, we will emphasize how the choice of an appropriate photodetector can significantly improve the telemeter performances by minimizing the amplitude to phase conversion. Our prototype, tested in the field, has proven its efficiency with a resolution better than 15 μm for a measurement time of 10 ms and distances up to 1.2 km.

Description: The InfraRed Video Bolometer (IRVB) is a powerful tool to measure radiated power in magnetically confined plasmas due to its ability to obtain 2D images of plasma emission using a technique that is compatible with the fusion nuclear environment. A prototype IRVB has been developed and installed on NSTX-U to view the lower divertor. The IRVB is a pinhole camera which images radiation from the plasma onto a 2.5 μ m thick, 9 × 7 cm 2 Pt foil and monitors the resulting spatio-temporal temperature evolution using an IR camera. The power flux incident on the foil is calculated by solving the 2D+time heat diffusion equation, using the foil’s calibrated thermal properties. An optimized, high frame rate IRVB, is quantitatively compared to results from a resistive bolometer on the bench using a modulated 405 nm laser beam with variable power density and square wave modulation from 0.2 Hz to 250 Hz. The design of the NSTX-U system and benchtop characterization are presented where signal-to-noise ratios are assessed using three different IR cameras: FLIR A655sc, FLIR A6751sc, and SBF-161. The sensitivity of the IRVB equipped with the SBF-161 camera is found to be high enough to measure radiation features in the NSTX-U lower divertor as estimated using SOLPS modeling. The optimized IRVB has a frame rate up to 50 Hz, high enough to distinguish radiation during edge-localized-modes (ELMs) from that between ELMs.

Description: By combining substrate-free structures with anodic bonding technology, we present a simple and efficient micro-electro-mechanical system (MEMS) thermal shear stress sensor. Significantly, the resulting depth of the vacuum cavity of the sensor is determined by the thickness of the silicon substrate at which Si is removed by the anisotropic wet etching process. Compared with the sensor based on a sacrificial layer technique, the proposed MEMS thermal shear-stress sensor exhibits dramatically improved sensitivity due to the much larger vacuum cavity depth. The fabricated MEMS thermal shear-stress sensor with a vacuum cavity depth as large as 525  μ m and a vacuum of 5 × 10 −2  Pa exhibits a sensitivity of 184.5 mV/Pa and a response time of 180  μ s. We also experimentally demonstrate that the sensor power is indeed proportional to the 1/3-power of the applied shear stress. The substrate-free structures offer the ability to precisely measure the shear stress fluctuations in low speed turbulent boundary layer wind tunnels.

Description: Hot-carrier degradation and room-temperature annealing effects are investigated in unpassivated ammonia-rich AlGaN/GaN high electron mobility transistors. Devices exhibit a fast recovery when annealed after hot carrier stress with all pins grounded. The recovered peak transconductance can exceed the original value, an effect that is not observed in control passivated samples. Density functional theory calculations suggest that dehydrogenation of pre-existing O N -H defects in AlGaN plays a significant role in the observed hot carrier degradation, and the resulting bare O N can naturally account for the “super-recovery” in the peak transconductance.

Description: Low-pressure chemical vapor deposition growth of graphene on Iridium (Ir) layers epitaxially deposited on α-Al 2 O 3 (0001) substrates was investigated. The X-ray diffraction, Raman and reflection high energy electron diffraction characterizations revealed that graphene films were epitaxially grown on Ir(111) layers, and the in-plane epitaxial relationship between graphene, Ir(111), and α-Al 2 O 3 (0001) was graphene ⟨ 1 1 ¯ 00 ⟩//Ir⟨ 11 2 ¯ ⟩//α-Al 2 O 3 ⟨ 11 2 ¯ 0 ⟩. The graphene on Ir(111) was electrochemically transferred onto SiO 2 /Si substrates. We also demonstrated the reuse of the Ir(111)/α-Al 2 O 3 (0001) substrates in multiple growth and transfer cycles.

Description: Simple kinematic considerations indicate that, under certain conditions in radio-frequency (rf) plasmas, the amplitude of the low-energy peak in ion energy distributions (IEDs) measured at an electrode depends sensitively on ion velocities upstream, at the presheath/sheath boundary. By measuring this amplitude, the velocities at which ions exit the presheath can be determined and long-standing controversies regarding presheath transport can be resolved. Here, IEDs measured in rf-biased, inductively coupled plasmas in CF 4 gas determined the presheath exit velocities of all significant positive ions: CF 3 + , CF 2 + , CF + , and F + . At higher bias voltages, we detected essentially the same velocity for all four ions. For all ions, measured velocities were significantly lower than the Bohm velocity and the electropositive ion sound speed. Neither is an accurate boundary condition for rf sheaths in electronegative gases: under certain low-frequency, high-voltage criteria defined here, either yields large errors in predicted IEDs. These results indicate that many widely used sheath models will need to be revised.

Description: Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Ag interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.

Description: We report a crucial step towards single-object cavity electrodynamics in the mid-infrared spectral range using resonators that borrow functionalities from antennas. Room-temperature strong light-matter coupling is demonstrated in the mid-infrared between an intersubband transition and an extremely reduced number of sub-wavelength resonators. By exploiting 3D plasmonic nano-antennas featuring an out-of-plane geometry, we observed strong light-matter coupling in a very low number of resonators: only 16, more than 100 times better than what reported to date in this spectral range. The modal volume addressed by each nano-antenna is sub-wavelength-sized and it encompasses only ≈4400 electrons.

Description: The background to this work was a prototype shadow sensor, which was designed for retro-fitting to an advanced LIGO (Laser Interferometer Gravitational wave Observatory) test-mass/mirror suspension, in which a 40 kg test-mass/mirror is suspended by four approximately 600 mm long by 0.4 mm diameter fused-silica suspension fibres. The shadow sensor comprised a LED source of Near InfraRed (NIR) radiation, and a “tall-thin” rectangular silicon photodiode detector, which together were to bracket the fibre under test. The photodiode was positioned so as to be sensitive (primarily) to transverse “Violin-Mode” vibrations of such a fibre, via the oscillatory movement of the shadow cast by the fibre, as this moved across the face of the detector. In this prototype shadow sensing system the photodiode was interfaced to a purpose-built transimpedance amplifier, this having both AC and DC outputs. A quasi-static calibration was made of the sensor’s DC responsivity, i.e., incremental rate of change of output voltage versus fibre position, by slowly scanning a fused-silica fibre sample transversely through the illuminating beam. The work reported here concerns the determination of the sensor’s more important AC (Violin-Mode) responsivity. Recognition of the correspondence between direct AC modulation of the source, and actual Violin-Mode signals, and of the transformative role of the AC / DC gain ratio for the amplifier, at any modulation frequency, f , resulted in the construction of the AC / DC calibration source described here. A method for determining in practice the transimpedance AC / DC gain ratio of the photodiode and amplifier, using this source, is illustrated by a specific numerical example, and the gain ratio for the prototype sensing system is reported over the frequency range 1 Hz–300 kHz. In fact, a maximum DC responsivity of 1.26 kV.m −1 was measured using the prototype photodiode sensor and amplifier discussed here. Therefore, the measured AC / DC transimpedance gain ratio of 922.5 for this sensor, at 500 Hz, translated into a maximum Violin-Mode ( AC ) responsivity of (1.16 ± 0.05) MV m −1 , at that frequency.

Description: A device is presented allowing for in situ investigation of chemically changing materials by means of X-ray imaging. A representative cork ablator sample, additionally instrumented with thermocouples, is encapsulated in an evacuated cell heating a sample surface with a heat flux of 230 kW/m 2 . The images show the sample surface and the in-depth progression of the char front dividing the char layer from the virgin material. Correlating the images to thermocouple data allows for the deduction of a reaction temperature. For the representative cork ablator investigated at the present conditions, the progression rate of the pyrolysis layer is determined to 0.0285 mm/s and pyrolysis temperature is 770 or 737 K, depending on the pre-existing conditions. It is found that the novel device is ideally suited for volume process imaging.

Description: In this communication, a novel optical technique has been proposed for the reconstruction of the shape of a Taylor bubble using measurements from multiple arrays of optical sensors. The deviation of an optical beam passing through the bubble depends on the contour of bubble surface. A theoretical model of the deviation of a beam during the traverse of a Taylor bubble through it has been developed. Using this model and the time history of the deviation captured by the sensor array, the bubble shape has been reconstructed. The reconstruction has been performed using an inverse algorithm based on Bayesian inference technique and Markov chain Monte Carlo sampling algorithm. The reconstructed nose shape has been compared with the true shape, extracted through image processing of high speed images. Finally, an error analysis has been performed to pinpoint the sources of the errors.

Description: Based on vibrational spectroscopy, coherent Raman Scattering (CRS) microscopy allows label-free imaging of biological and chemical samples with endogenous image contrast. Two-color, synchronized picosecond pulses are typically used for high spectral resolution imaging, which in turn constitutes a dramatic laser source challenge for CRS microscopy. Recently, synchronized time-lens source, inspired from ultrafast optical signal processing, has emerged as a promising laser source solution and has found application in various modalities of CRS microscopy. Time-lens is based on space-time analogy, which uses a “lens” in the time domain to compress long optical pulses or even continuous waves to ultrashort pulses, mimicking a lens in the space domain. Phase and intensity modulators driven with electrical signals are used in the time-lens source for picosecond pulse generation. As a result, the time-lens source is highly versatile and naturally compatible with modulation capabilities. More importantly, if the electrical signals used to drive the time-lens source are derived from other laser sources, such as mode-locked lasers, then synchronization between them can be realized, underlying the physics of a synchronized time-lens source. In this paper, we review recent progress on the basic principle, design of the synchronized time-lens source, and its applications to CRS microscopy of both biological and chemical samples.

Description: In this paper, a new double micropipettes configuration mode of scanning ion conductance microscopy (SICM) is presented to better overcome ionic current drift and further improve the performance of SICM, which is based on a balance bridge circuit. The article verifies the feasibility of this new configuration mode from theoretical and experimental analyses, respectively, and compares the quality of scanning images in the conventional single micropipette configuration mode and the new double micropipettes configuration mode. The experimental results show that the double micropipettes configuration mode of SICM has better effect on restraining ionic current drift and better performance of imaging. Therefore, this article not only proposes a new direction of overcoming the ionic current drift but also develops a new method of SICM stable imaging.

Description: A new imaging algorithm is proposed to capture the kinematics of flexible, thin, light structures including frequencies and motion amplitudes for real time analysis. The studied case is a thin flexible beam that is preset at different angles of attack in a wind tunnel. As the angle of attack is increased beyond a critical value, the beam was observed to undergo a static deflection that is ensued by limit cycle oscillations. Imaging analysis of the beam vibrations shows that the motion consists of a superposition of the bending and torsion modes. The proposed algorithm was able to capture the oscillation amplitudes as well as the frequencies of both bending and torsion modes. The analysis results are validated through comparison with measurements from a piezoelectric sensor that is attached to the beam at its root.

Description: A thermal dissociation cavity attenuated phase shift spectroscopy (TD-CAPS) instrument was developed for measuring total peroxy nitrates (PNs) and organic nitrates (ONs) concentrations in the clean atmosphere. This instrument is easy to operate and can be applied to continuous measurement of PNs and ONs. A continuously measurable system is convenient to perform observations, especially in remote areas. Three lines (NO 2 , PNs, and ONs lines) were used for thermal dissociation. The NO 2 line contains a quartz tube that is not heated, while the PN and ON lines contain quartz tubes that are heated at 433 K and 633 K, respectively. The concentrations of NO 2 , NO 2 + PNs, and NO 2 + PNs + ONs can be obtained from the NO 2 , PN, and ON lines, respectively. The lower limit values of the detection limit (3σ) for PNs and ONs were estimated to be 21 parts per trillion by volume with an integration time of 2 min. PNs were selectively thermally decomposed in the PNs line and formed NO 2 quantitatively. In the ONs line, both PNs and ONs were thermally decomposed to produce NO 2 quantitatively, but partial decomposition of HNO 3 at 633 K interfered with the ONs measurement. Therefore, a HNO 3 scrubber is required before the ONs line. Continuous observations were conducted with the TD-CAPS instrument in a remote area, and the instrument performed well for obtaining PNs and ONs concentrations.

Description: A novel diamond anvil cell suitable for electrical transport measurements under high pressure has been developed. A boron-doped metallic diamond film was deposited as an electrode on a nano-polycrystalline diamond anvil using a microwave plasma-assisted chemical vapor deposition technique combined with electron beam lithography. The maximum pressure that can be achieved by this assembly is above 30 GPa. We report electrical transport measurements of Pb up to 8 GPa. The boron-doped metallic diamond electrodes showed no signs of degradation after repeated compression.

Description: Optical birefringence imaging systems demonstrate a high potential for comprehensively investigating various phase transitions. To completely demonstrate such abilities, the temperature dependence of birefringence (Δ n ) was measured in Δ n ≃ 0 materials (i.e., cubic crystals with imperfect crystallization) via a background subtraction method. As a result, highly accurate birefringence imaging at 384 × 288 pixels was obtained using phase transition processes as well as varying temperatures visually characterized by the spatial distribution of not only the retardance level but also the optical fast-axis azimuth.

Description: A free space measurement method, which consists of two horn antennas, a network analyzer, two frequency extenders, and a sample holder, is used to measure transmission ( S 21 ) coefficients in 75-110 GHz (W-Band) frequency range. Singular spectrum analysis method is presented to eliminate the error and noise of raw S 21 data after calibration and measurement processes. The proposed model can be applied easily to remove the repeated calibration process for each sample measurement. Hence, smooth, reliable, and accurate data are obtained to determine the dielectric properties of materials. In addition, the dielectric constant of materials (paper, polyvinylchloride-PVC, Ultralam® 3850HT, and glass) is calculated by thin sheet approximation and Newton-Raphson extracting techniques using a filtered S 21 transmission parameter.

Description: An electron density diagnostic (≥10 10 cm −3 ) capable of high temporal (ms) and spatial (mm) resolution is currently under development at Oak Ridge National Laboratory. The diagnostic is based on measuring the Stark broadened, Doppler-free spectral line profile of the n = 6–2 hydrogen Balmer series transition. The profile is then fit to a fully quantum mechanical model including the appropriate electric and magnetic field operators. The quasi-static approach used to calculate the Doppler-free spectral line profile is outlined here and the results from the model are presented for H-δ spectra for electron densities of 10 10 –10 13 cm −3 . The profile shows complex behavior due to the interaction between the magnetic substates of the atom.

Description: This paper reports a piezoelectric aluminum nitride (AlN) based micro-machined infrasonic hydrophone. We have conducted a systematic design study for the hydrophone sensor to meet the stringent requirements of underwater applications. The hydrophone sensor was fabricated on a cavity silicon-on-insulator (SOI) substrate using an in-house CMOS-compatible AlN-on-SOI process platform. A 5 × 5 arrayed hydrophone sensor was characterized thoroughly using an industry-standard hydrophone calibration instrument. The results show that the hydrophone achieved a sound sensitivity of −182.5 dB ± 0.3 dB (ref. to 1 V rms/ μ Pa) and an eligible acceleration sensitivity of only −196.5 dB (ref. to 1 V rms/ μ g), respectively, a non-linearity of 0.11%, a noise resolution of 57.5 dB referenced to 1  μ Pa/√Hz within an ultra-low operation bandwidth of 10 Hz∼100 Hz, the highest noise resolution of micro-machined hydrophones reported to date, and better than traditional bulky hydrophones in terms of the same application. The size of the 5 × 5 arrayed hydrophone sensor is about 2 mm × 2 mm.

Description: The development of miniaturized robotic swimmers is hindered by technical limitations in micro- and nanofabrication. To circumvent these limitations, we investigated the minimal geometrical requirements for swimming in low Reynolds number. Micro- and nanofabrication of complex shapes, such as helices, on a massive scale requires sophisticated state of the art technologies and has size limitations. In contrast, simple shaped structures, such as spherical particles, can be fabricated massively using chemical synthesis with relative ease. Here, simple microswimmers were fabricated using two microparticles with debris attached to their surface. The debris on the microswimmer's surface creates a geometry with two or more planes of symmetry, allowing the microswimmer to swim in bulk fluid at low Reynolds number. The microswimmers are magnetically actuated and controlled via a uniform rotating magnetic field generated by an approximate Helmholtz electromagnetic coil system. We characterized the microswimmer's velocity profile with respect to rotating frequency and analyzed the motion of the microswimmer using image processing. Finally, we demonstrated the controllability of the microswimmers by freely steering them in any desired directions.

Description: We describe the principles of design, fabrication, and operation of a piezoelectric optomechanical crystal with which we demonstrate bi-directional conversion of energy between microwave and optical frequencies. The optomechanical crystal has an optical mode at 1523 nm co-located with a mechanical breathing mode at 3.8 GHz, with a measured optomechanical coupling strength g om /2π of 115 kHz. The breathing mode is driven and detected by curved interdigitated transducers that couple to a Lamb mode in suspended membranes on either end of the optomechanical crystal, allowing the external piezoelectric modulation of the optical signal as well as the converse, the detection of microwave electrical signals generated by a modulated optical signal. We compare measurements to theory where appropriate.

Description: A large laser modulated resistance effect was observed in a Cu 2 O heterojunction of Cu 2 O/Si. Compared to the no laser illumination condition, the lateral resistance of the Cu 2 O film was greatly altered. More interestingly, through the spatial movement of a laser spot between two electrodes, a tunable resistance with good linearity was achieved. We attribute this surface resistance effect to the difference in carrier mobility and carrier density between the Cu 2 O and Si sides. The strong linear resistance change ratio of Cu 2 O/Si indicates that this simple PN heteroepitaxial junction structure is a potential candidate for laser-controlled resistors, sensors, and even storage devices.

Description: C-2U is a high-confinement, advanced beam driven field-reversed configuration plasma experiment which sustains the configuration for 〉5 ms, in excess of typical MHD and fast particle instability times, as well as fast particle slowing down times. Fast particle dynamics are critical to C-2U performance and several diagnostics have been deployed to characterize the fast particle population, including neutron and proton detectors. To increase our understanding of fast particle behavior and supplement existing diagnostics, an E ∥ B neutral particle analyzer was installed, which simultaneously measures H 0 and D 0 flux with large dynamic range and high energy resolution. Here we report the commissioning of the E ∥ B analyzer, confirm the instrument has energy resolution Δ E / E ≲ 0 . 1 and a dynamic range E max / E min ∼ 30 , and present measurements of initial testing on C-2U.

Description: Compact pulsed power system based on compact Marx generator is widely used in terms of drive resistance and capacitive loads. This system usually adopts high performance components such as high energy density capacitors, compact switches, and integrated structure. Traditional compact Marx generator can only output double-exponential pulse profile. In this paper a compact, low-impedance Marx module which can output rectangular pulse profile is design and tested. This module has multiple circuits of different discharge frequencies in parallel to generate quasi-rectangular pulse. Discharge characteristic of an ideal module with infinite branches is calculated theoretically. A module with two branches has been designed and tested. Test results show that the impedance of the module is 1.2 Ω. When charging voltage is 100.6 kV and load resistance is 1 Ω, the peak output pulse is 45.2 kV voltage, the peak power is about 2 GW, the pulse width is about 130 ns, and the rise time is about 35 ns. The energy density and power density of the module are 15 kJ/m 3 and 140 GW/m 3 , respectively.

Description: An optical flux sensor, based on the fluorescence properties of materials and nanoparticles, has been developed to control the deposition rate in thin film deposition systems. Using a simple diode laser and a photomultiplier tube with a light filter, we report the detection of gallium atoms and CdSe-ZnS quantum dots. This setup has a high sensitivity and reproducibility.

Description: An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al 0.85 Ga 0.15 N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I on /I off current ratio greater than 10 7 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.

Description: We investigate spin-current transport with an antiferromagnetic insulator NiO thin layer by means of the spin-Hall magnetoresistance (SMR) over a wide range of temperature in Pt/NiO/Y 3 Fe 5 O 12 (Pt/NiO/YIG) heterostructures. The SMR signal is comparable to that without the NiO layer as long as the temperature is near or above the blocking temperature of the NiO, indicating that the magnetic fluctuation of the insulating NiO is essential for transmitting the spin current from the Pt to YIG layer. On the other hand, the SMR signal becomes negligibly small at low temperature, and both conventional anisotropic magnetoresistance and the anomalous Hall resistance are extremely small at any temperature, implying that the insertion of the NiO has completely suppressed the Pt magnetization induced by the YIG magnetic proximity effect (MPE). The dual roles of the thin NiO layer are, to suppress the magnetic interaction or MPE between Pt and YIG, and to maintain efficient spin current transmission at high temperature.

Description: We have investigated the detailed magnetic, magnetoelectric (ME), magnetodielectric (MD) and thermal expansion properties in Co 4 Nb 2 O 9 crystal. A magnetic-field-induced spin flop was observed below antiferromagnetic (AFM) transition temperature T N . Dielectric constant at applied magnetic field nearly diverges around the AFM transition, giving rise to a colossal MD effect as high as ∼138% around T N . Theoretical analysis of the ME and MD data revealed a major contribution of critical spin fluctuation to the colossal MD effect in Co 4 Nb 2 O 9 . These results suggest that linear ME materials with large ME coupling might be potentially used to realize large MD effect for future application.

Description: GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 10 8  cm −2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0–4.6 × 10 6  cm −2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.

Description: The energy landscape of Zr at high hydrostatic pressure suggests that its transformation behavior is strongly pressure dependent. This is in contrast to the known transition mechanism in Ti, which is essentially independent of hydrostatic pressure. Generalized solid-state nudged elastic band calculations at constant pressure shows that α-Zr transforms like Ti only at the lowest pressure inside the stability field of ω-phase. Different pathways apply at higher pressures where the energy landscape contains several high barriers so that metastable states are expected, including the appearance of a transient bcc phase at ca. 23 GPa. The global driving force for the hcp-ω transition increases strongly with increasing pressure and reaches 23.7 meV/atom at 23 GPa. Much of this energy relates to the excess volume of the hcp phase compared with its ω phase.

Description: We investigated the structure and magneto-transport properties of magnetic junctions using a Co 2 Fe(Ga 0.5 Ge 0.5 ) Heusler alloy as ferromagnetic electrodes and a Cu(In 0.8 Ga 0.2 )Se 2 (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product ( RA ) values between 0.3 and 3 Ω  μ m 2 . Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

Description: In this study, we present the experimental observation that polycrystalline Mn 2+x Fe 1−x Ga (x = −0.2, 0, 0.2, 0.4) compounds can be synthesized to be D0 19 -type (Ni 3 Sn-type) hexagonal structure with space group P63/mmc. A giant exchange bias field up to 1.32 kOe was achieved in hexagonal Mn 2 FeGa alloy at 5 K. A cluster glass state is confirmed by ac susceptibility measurement under different driving frequencies. Interestingly, robust horizontal and vertical shifts in magnetic hysteresis loop were simultaneously observed at 5 K under high cooling field up to 90 kOe. The large exchange bias is originated from the large exchange anisotropy between cluster glass phase and ferrimagnetic matrix. The vertical shift is thought to be attributed to the incomplete reversal of frozen cluster spins.

Description: Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V oc with increasing fluence; however, the 80 nm cell showed no degradation in I sc for fluences up to 10 14  p + cm −2 . For the same exposure, the I sc of the 800 nm cell had severely degraded leaving a remaining factor of 0.26.

Description: Indium nitride (InN) is potentially suitable for the fabrication of high performance thin-film transistors (TFTs) because of its high electron mobility and peak electron velocity. However, InN is usually grown using a high temperature growth process, which is incompatible with large-area and lightweight TFT substrates. In this study, we report on the room temperature growth of InN films on flexible polyimide sheets using pulsed sputtering deposition. In addition, we report on the fabrication of InN-based TFTs on flexible polyimide sheets and the operation of these devices.

Description: Molecular dynamic simulations of Y 2 O 3 in bcc Fe and transmission electron microscopy (TEM) observations were used to understand the structure of Y 2 O 3 nano-clusters in an oxide dispersion strengthened steel matrix. The study showed that Y 2 O 3 nano-clusters below 2 nm were completely disordered. Y 2 O 3 nano-clusters above 2 nm, however, form a core-shell structure, with a shell thickness of 0.5–0.7 nm that is independent of nano-cluster size. Y 2 O 3 nano-clusters were surrounded by off-lattice Fe atoms, further increasing the stability of these nano-clusters. TEM was used to corroborate our simulation results and showed a crossover from a disordered nano-cluster to a core-shell structure.

Description: In n-type Czochralski silicon (Cz-Si) wafer, swirl shaped regions with low lifetime (known as striations) can cause degradation up to 1% absolute or even more in homojunction industrial solar cells. Nevertheless, the nature of the defects responsible for the occurrence of these striations is still unclear. In this work, n-type Cz-Si solar cell precursors cut from industrial size ingots with different feedstock quality and oxygen content were analyzed by microwave photo-conductance decay and photoluminescence in order to investigate the nature of such defects. The results demonstrate that the defects responsible for the occurrence of striations are oxide nanoprecipitates formed during the high temperature steps for the solar cell realization, due to the presence of grown-in oxygen nuclei.

Description: Sensitive visualization and conformational control of long, delicate biopolymers present critical challenges to emerging biotechnologies and biophysical studies. Next-generation nanofluidic manipulation platforms strive to maintain the structural integrity of genomic DNA prior to analysis but can face challenges in device clogging, molecular breakage, and single-label detection. We address these challenges by integrating the Convex Lens-induced Confinement (CLiC) technique with a suite of nanotopographies embedded within thin-glass nanofluidic chambers. We gently load DNA polymers into open-face nanogrooves in linear, concentric circular, and ring array formats and perform imaging with single-fluorophore sensitivity. We use ring-shaped nanogrooves to access and visualize confinement-enhanced self-ligation of long DNA polymers. We use concentric circular nanogrooves to enable hour-long observations of polymers at constant confinement in a geometry which eliminates the confinement gradient which causes drift and can alter molecular conformations and interactions. Taken together, this work opens doors to myriad biophysical studies and biotechnologies which operate on the nanoscale.

Description: A general, substrate-independent method for plasma deposition of nanostructured, crystalline metal oxides is presented. The technique uses a flow-through, micro-hollow cathode plasma discharge (supersonic microplasma jet) with a “remote” ring anode to deliver a highly directed flux of growth species to the substrate. A diverse range of nanostructured materials (e.g., CuO, α-Fe 2 O 3 , and NiO) can be deposited on any room temperature surface, e.g., conductors, insulators, plastics, fibers, and patterned surfaces, in a conformal fashion. The effects of deposition conditions, substrate type, and patterning on film morphology, nanostructure, and surface coverage are highlighted. The synthesis approach presented herein provides a general and tunable method to deposit a variety of functional and hierarchical metal oxide materials on many different surfaces. High surface area, conversion-type CuO electrodes for Li-ion batteries are demonstrated as a proof-of-concept example.

Description: We discuss the effects of built-in fields and contact configuration on the photovoltaic characteristics of ultra-thin GaAs solar cells. The investigation is based on advanced quantum-kinetic simulations reaching beyond the standard semi-classical bulk picture concerning the consideration of charge carrier states and dynamics in complex potential profiles. The thickness dependence of dark and photocurrent in the ultra-scaled regime is related to the corresponding variation of both, the built-in electric fields and associated modification of the density of states, and the optical intensity in the films. Losses in open-circuit voltage and short-circuit current due to the leakage of electronically and optically injected carriers at minority carrier contacts are investigated for different contact configurations including electron and hole blocking barrier layers. The microscopic picture of leakage currents is connected to the effect of finite surface recombination velocities in the semi-classical description, and the impact of these non-classical contact regions on carrier generation and extraction is analyzed.

Description: Recent defect calculations suggest that the open circuit voltage of CuGaSe 2 solar cells can be limited by deep intrinsic electron traps by Ga Cu antisites and their complexes with Cu-vacancies. To gain experimental evidence, two radiative defect transitions at 1.10 eV and 1.24 eV are characterized by steady-state photoluminescence on epitaxial-grown CuGaSe 2 thin films. Cu-rich samples are studied, since they show highest crystal quality, exciton luminescence, and no potential fluctuations. Variations of the laser intensity and temperature dependent measurements suggest that emission occurs from two deep donor-like levels into the same shallow acceptor. At 10 K, power-law exponents of 1 (low excitation regime) and 1/2 (high excitation regime) are observed identically for both transitions. The theory and a fitting function for the double power law is derived. It is concluded that the acceptor becomes saturated by excess carriers which changes the exponent of all transitions. Activation energies determined from the temperature quenching depend on the excitation level and show unexpected values of 600 meV and higher. The thermal activation of non-radiative processes can explain the distortion of the ionization energies. Both the deep levels play a major role as radiative and non-radiative recombination centers for electrons and can be detrimental for photovoltaic applications.

Description: We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3  μ s for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications.

Description: We design and implement 3D-lumped element microwave cavities that spatially focus magnetic fields to a small mode volume. They allow coherent and uniform coupling to electron spins hosted by nitrogen vacancy centers in diamond. We achieve large homogeneous single spin coupling rates, with an enhancement of more than one order of magnitude compared to standard 3D cavities with a fundamental resonance at 3 GHz. Finite element simulations confirm that the magnetic field distribution is homogeneous throughout the entire sample volume, with a root mean square deviation of 1.54%. With a sample containing 10 17 nitrogen vacancy electron spins, we achieve a collective coupling strength of Ω = 12 MHz, a cooperativity factor C = 27, and clearly enter the strong coupling regime. This allows to interface a macroscopic spin ensemble with microwave circuits, and the homogeneous Rabi frequency paves the way to manipulate the full ensemble population in a coherent way.

Description: For macroscopically manipulating heat flow at will, thermal metamaterials have opened a practical way, which possesses a single function, such as either cloaking or concentrating the flow of heat even though environmental temperature varies. By developing a theory of transformation heat transfer for multiple functions, here we introduce the concept of intelligent thermal metamaterials with a dual function, which is in contrast to the existing thermal metamaterials with single functions. By assembling homogeneous isotropic materials and shape-memory alloys, we experimentally fabricate a kind of intelligent thermal metamaterials, which can automatically change from a cloak (or concentrator) to a concentrator (or cloak) when the environmental temperature changes. This work paves an efficient way for a controllable gradient of heat, and also provides guidance both for arbitrarily manipulating the flow of heat and for efficiently designing similar intelligent metamaterials in other fields.

Description: We have directly probed the dynamic behavior of a single ferromagnetic disk as a function of neighboring disk interactions and lattice configurations using micro-focused Brillouin light scattering spectroscopy. At high field, when the disks are in the single domain state, the dynamic behavior of the disk under probe is strongly influenced by the neighboring disk configurations due to magnetostatic interactions. In particular, the changing landscape of dipolar field from neighboring disks as a function of lattice configurations plays a key role in modifying the resultant internal field of the disk under probe. When the disks are in the vortex state at remanence, the effects of dipolar fields on the disk under probe vanish resulting in a negligible configurational anisotropy. Micromagnetic simulations and stray field models are in good agreement with the experimental results.

Description: Combining experiment and theory, we investigate how a naturally created heterojunction ( pn junction) at a graphene and metallic contact interface is modulated via interaction with molecular hydrogen (H 2 ). Due to an electrostatic interaction, metallic electrodes induce pn junctions in graphene, leading to an asymmetrical resistance in electronic transport for electrons and holes. We report that the asymmetry in the resistance can be tuned in a reversible manner by exposing graphene devices to H 2 . The interaction between the H 2 and graphene occurs solely at the graphene-contact pn junction and induces a modification on the electrostatic interaction between graphene and metallic contacts. We explain the experimental data with theory providing information concerning the length of the heterojunction and how it changes as a function of H 2 adsorption. Our results are valuable for understanding the nature of the metal-graphene interfaces and have potential application for selective sensors of molecular hydrogen.

Description: We present a design of multilayer core-shell nanostructures formed by introducing a dielectric gap shell layer between a silver core and a monolayer graphene shell for spectrally selective absorption enhancement in graphene based on an unconventional Fano effect. We demonstrate that this mechanism enables great flexibility in the choice of parameters of the proposed structures for the achievement of a relatively large and narrow-band absorption enhancement in graphene. Furthermore, we also demonstrate that such a spectrally selective absorption enhancement in graphene is highly tunable and can be optimized by controlling either the core or the shell parameters. These unique absorption properties may have applications in color-selective photodetectors and image sensors.

Description: In this study, we present the influence of the embedding matrix on the relaxation of Fe(phen) 2 (NCS) 2 (phen = 1,10-phenanthroline) spin-transition microparticles as revealed by experiments and provide an explanation within the framework of an elastic model based on a Monte-Carlo method. Experiments show that the shape of the high-spin → low-spin relaxation curves is drastically changed when the particles are dispersed in glycerol. This effect was considered in the model by means of interactions between the microparticles and the matrix. A faster start of the relaxation for microparticles embedded in glycerol is due to an initial positive local pressure acting on the edge spin-crossover molecules from the matrix side. This local pressure diminishes and eventually becomes negative during relaxation, as an effect of the decrease of the volume of spin-crossover microparticles from high-spin to low-spin.

Description: We present a method of forming shallow p- doping on a 4H-SiC surface by depositing a thin Al layer ( d  = 5 nm) and then thermally annealing it at 1000 °C for 10 min. A secondary ion mass spectrometry analysis of the annealed Al/SiC sample reveals an Al concentration in excess of 10 17  cm −3 up to a depth of d ≤ 250 nm. I–V measurements and CV characterizations of Ti-SiC Schottky barrier diodes (SBDs) fabricated on a n- type SiC epi-wafer indicate that the shallow Al doping increases the built-in potential of the junction and the barrier height by Δ V b i = 0.51   eV and Δ ϕ B = 0.26   eV , respectively. Assuming a rectangular doping profile, calculations of the built-in voltage shift and the Schottky barrier height indicate that partial dopant activation ( activation ratio ∼ 2%) can induce the observed barrier height shift. The shallow doping method was then used to fabricate junction terminations in SBDs which increased the breakdown voltage and reduced the reverse leakage current. Technology CAD simulations of the SBD with and without doping verify that a reduction of peak electric field can explain the improvement of the breakdown voltage.

Description: We report on the detection of structural inhomogeneity across anode and cathode interfaces in electrically degraded reduced and oxidized Fe -doped SrTiO 3 (Fe:STO) single crystals by optical second harmonic generation (SHG) spectroscopy. SHG spectra were collected from several regions across the anode and cathode interfaces in both degraded reduced and oxidized Fe:STO crystals. We identify the formation of defect concentration gradients along both degraded reduced and oxidized anode interfaces. While the broken symmetries decrease from the outer region towards the central region of the reduced anode, the opposite trend is seen in the degraded oxidized anode. These results are attributed to the formation of centrosymmetric Fe 4+ :Ti 4+ -O 6 octahedral structures in the central region of the reduced sample's degraded anode and non-centrosymmetric Jahn-Teller distortions in the central region of the oxidized sample's degraded anode. The observed changes in SHG intensity from the outer region towards the central region of the degraded cathode interfaces is accompanied by a structural phase transition in the inner and outer regions, marked by strong changes to the s- polarized intensity spectra. We explain the SHG intensity changes by the formation of lower order symmetry Fe 3+ :Ti 3+ -O 6 structures in the outer region and a modification of the second-order nonlinear susceptibility near the central regions due to the clustering of dissociated oxygen vacancies. These significant structural and spatial inhomogeneities are linked directly to the field-driven migration of oxygen ions and vacancies.

Description: Radiochromic films (RCF) are commonly used in dosimetry for a wide range of radiation sources (electrons, protons, and photons) for medical, industrial, and scientific applications. They are multi-layered, which includes plastic substrate layers and sensitive layers that incorporate a radiation-sensitive dye. Quantitative dose can be retrieved by digitizing the film, provided that a prior calibration exists. Here, to calibrate the newly developed EBT3 and HDv2 RCFs from Gafchromic™, we used the Stanford Medical LINAC to deposit in the films various doses of 10 MeV photons, and by scanning the films using three independent EPSON Precision 2450 scanners, three independent EPSON V750 scanners, and two independent EPSON 11000XL scanners. The films were scanned in separate RGB channels, as well as in black and white, and film orientation was varied. We found that the green channel of the RGB scan and the grayscale channel are in fact quite consistent over the different models of the scanner, although this comes at the cost of a reduction in sensitivity (by a factor ∼2.5 compared to the red channel). To allow any user to extend the absolute calibration reported here to any other scanner, we furthermore provide a calibration curve of the EPSON 2450 scanner based on absolutely calibrated, commercially available, optical density filters.

Description: The anode pulse of a photomultiplier tube (PMT) coupled with a scintillator is used for pulse shape discrimination (PSD) analysis. We have developed a novel emulation technique for the PMT anode pulse based on optical photon transport and a PMT response function. The photon transport was calculated using Geant4 Monte Carlo code and the response function with a BC408 organic scintillator. The obtained percentage RMS value of the difference between the measured and simulated pulse with suitable scintillation properties using GSO:Ce (0.4, 1.0, 1.5 mol%), LaBr 3 :Ce and BGO scintillators were 2.41%, 2.58%, 2.16%, 2.01%, and 3.32%, respectively. The proposed technique demonstrates high reproducibility of the measured pulse and can be applied to simulation studies of various radiation measurements.

Description: Back contact property plays a key role in the charge collection efficiency of c-Si/poly(3,4-ethylthiophene):poly(styrenesulfonate) hybrid solar cells (Si-HSCs), as an alternative for the high-efficiency and low-cost photovoltaic devices. In this letter, we utilize the water soluble poly (ethylene oxide) (PEO) to modify the Al/Si interface to be an Ohmic contact via interface dipole tuning, decreasing the work function of the Al film. This Ohmic contact improves the electron collection efficiency of the rear electrode, increasing the short circuit current density ( J sc ). Furthermore, the interface dipoles make the band bending downward to increase the total barrier height of built-in electric field of the solar cell, enhancing the open circuit voltage ( V oc ). The PEO solar cell exhibits an excellent performance, 12.29% power conversion efficiency, a 25.28% increase from the reference solar cell without a PEO interlayer. The simple and water soluble method as a promising alternative is used to develop the interfacial contact quality of the rear electrode for the high photovoltaic performance of Si-HSCs.

Description: We demonstrate a high-efficiency tunable acoustic absorber for low frequencies (

Description: Micron-sized metal-coated polymer spheres are frequently used as filler particles in conductive composites for electronic interconnects. However, the intrinsic electrical resistivity of the spherical thin films has not been attainable due to deficiency in methods that eliminate the effect of contact resistance. In this work, a four-point probing method using vacuum compatible piezo-actuated micro robots was developed to directly investigate the electric properties of individual silver-coated spheres under real-time observation in a scanning electron microscope. Poly(methyl methacrylate) spheres with a diameter of 30  μ m and four different film thicknesses (270 nm, 150 nm, 100 nm, and 60 nm) were investigated. By multiplying the experimental results with geometrical correction factors obtained using finite element models, the resistivities of the thin films were estimated for the four thicknesses. These were higher than the resistivity of bulk silver.

Description: The synthesis of a 50 unit cell thick n = 4 Sr n+1 Ti n O 3n+1 (Sr 5 Ti 4 O 13 ) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO 2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO 2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of 〉4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO 3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

Description: We implement a quantum random number generator based on a balanced homodyne measurement of vacuum fluctuations of the electromagnetic field. The digitized signal is directly processed with a fast randomness extraction scheme based on a linear feedback shift register. The random bit stream is continuously read in a computer at a rate of about 480 Mbit/s and passes an extended test suite for random numbers.

Description: Numerous loss mechanisms can limit coherence and scalability of planar and 3D-based circuit quantum electrodynamics (cQED) devices, particularly due to their packaging. The low loss and natural isolation of 3D enclosures make them good candidates for coherent scaling. We introduce a coaxial transmission line device architecture with coherence similar to traditional 3D cQED systems. Measurements demonstrate well-controlled external and on-chip couplings, a spectrum absent of cross-talk or spurious modes, and excellent resonator and qubit lifetimes. We integrate a resonator-qubit system in this architecture with a seamless 3D cavity, and separately pattern a qubit, readout resonator, Purcell filter, and high- Q stripline resonator on a single chip. Device coherence and its ease of integration make this a promising tool for complex experiments.

Description: Metallic hierarchical texture was prepared by nickel-cobalt electro-deposition and subsequent replacement reaction to coat silver. Due to energetically favorable hydrocarbon adsorption on the silver film, contact angle of the surface increased gradually over time after exposure to laboratory air. The substrate became superhydrophobic after three days to aqueous droplets with various pH values. It was found that the surface remained stable after exposing to extreme temperatures in the wide range from −196 °C to 200 °C. Importantly, self-healing of superhydrophobicity can be easily accomplished and repeated in an ambient environment while hydrocarbon desorption occurred under high temperature. Furthermore, this approach can be easily applied to other conductive substrates.

Description: We demonstrate that acoustic levitation can levitate spherical objects much larger than the acoustic wavelength in air. The acoustic levitation of an expanded polystyrene sphere of 50 mm in diameter, corresponding to 3.6 times the wavelength, is achieved by using three 25 kHz ultrasonic transducers arranged in a tripod fashion. In this configuration, a standing wave is created between the transducers and the sphere. The axial acoustic radiation force generated by each transducer on the sphere was modeled numerically as a function of the distance between the sphere and the transducer. The theoretical acoustic radiation force was verified experimentally in a setup consisting of an electronic scale and an ultrasonic transducer mounted on a motorized linear stage. The comparison between the numerical and experimental acoustic radiation forces presents a good agreement.

Description: The standard “Kittel Law” for the thickness and shape of ferroelectric, ferroelastic, or ferromagnet domains assumes mechanical equilibrium. The present paper shows that such domains may be highly nonequilibrium, with unusual thicknesses and shapes. In lead germanate and multiferroic lead zirconate titanate iron tantalate domain wall instabilities resemble hydrodynamics (Richtmyer–Meshkov and Helfrich–Hurault, respectively).

Description: The spin orbit torques (SOTs) in perpendicularly magnetized Co-Ni multilayers sandwiched between two heavy metals (HM) have been studied. By exploring various HM materials, we show an efficient enhancement or cancellation of the total SOT, depending on the combination of the two HM materials. The maximum SOT effective field is obtained in Pt/Co-Ni/W heterostructures. We also model our double HM system and show that the effective spin Hall angle has a peak value at certain HM thicknesses. Measuring the SOT in Pt/Co-Ni/W for various W thicknesses confirms an effective spin Hall angle up to 0.45 in our double HM system.

Description: We investigate the dynamics of donor bound excitons (D°X A ) at T  = 10 K around an isolated single edge dislocation in homoepitaxial GaN, using a picosecond time-resolved cathodoluminescence (TR-CL) setup with high temporal and spatial resolutions. An ∼ 1.3 meV dipole-like energy shift of D°X A is observed around the dislocation, induced by the local strain fields. By simultaneously recording the variations of both the exciton lifetime and the CL intensity across the dislocation, we directly assess the dynamics of excitons around the defect. Our observations are well reproduced by a diffusion model. It allows us to deduce an exciton diffusion length of ∼24 nm as well as an effective area of the dislocation with a radius of ∼95 nm, where the recombination can be regarded as entirely non-radiative.

Description: We have studied the magnetic order of highly strained (001)-oriented BiFeO 3 (BFO) thin films using 57 Fe Conversion Electron Mössbauer Spectrometry. From 90 K to 620 K the films exhibit a collinear antiferromagnetic structure, in contrast with the cycloidal structure observed in bulk BFO. Moreover, we find that both the planar magnetic anisotropy for compressive strain and out-of-plane anisotropy for tensile strain persist from 90 K up to the Néel temperature ( T N ), which itself shows only a weak strain dependence. An analysis of the line asymmetry of the paramagnetic doublet for temperatures above T N is used to reveal the strain-dependent rotation of the polarization direction, consistent with previous observations. Our results show that the lattice dynamics in BFO films are strongly strain-dependent, offering avenues toward acoustic phonon devices. Finally, we use the versatility of Mössbauer spectroscopy technique to reveal various multi-property features including magnetic states, polarization direction and elastic strain.

Description: Ohmic contacts fabricated by regrowth of n + GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

Description: Vertically integrated III-nitride based nano-LEDs (light emitting diodes) were designed and fabricated for operation in the telecommunication wavelength range in the (p-GaN/InGaN/n-GaN/sapphire) material system. The band edge luminescence energy of the nano-LEDs could be engineered by tuning the composition and size of the InGaN mesoscopic structures. Narrow band edge photoluminescence and electroluminescence were observed. Our mesoscopic InGaN structures (depending on diameter) feature a very low power consumption in the range between 2 nW and 30 nW. The suitability of the technological process for the long-term operation of LEDs is demonstrated by reliability measurements. The optical and electrical characterization presented show strong potential for future low energy consumption optoelectronics.

Description: ZnO/ZnSe heterostructure parallel arrays on glass substrate were prepared through ultrathin layers electrodeposition method combining with annealing treatment. There are two essential factors for the formation of such kind of parallel arrays: the periodical change of charges and ions concentration, and the mutual equilibrium of electric repulsion at the growth front. The research for photoresponse characteristics of the heterostructure arrays demonstrates a UV/visible broad spectral response.

Description: Some group III elements such as Indium are known to produce the resonant impurity states in IV-VI compounds. The discovery of these impurity states has opened up new ways for engineering the thermoelectric properties of IV-VI compounds. In this work, resonant states in SnTe were studied by co-doping with both resonant (In) and extrinsic (Ag, I) dopants. A characteristic nonlinear relationship was observed between the Hall carrier concentration (n H ) and extrinsic dopant concentration (N I , N Ag ) in the stabilization region, where a linear increase of dopant concentration does not lead to linear response in the measured n H . Upon substituting extrinsic dopants beyond a certain amount, the n H changed proportionally with additional dopants (Ag, I) (the doping region). The Seebeck coefficients are enhanced as the resonant impurity is introduced, whereas the use of extrinsic doping only induces minor changes. Modest zT enhancements are observed at lower temperatures, which lead to an increase in the average zT values over a broad range of temperatures (300–773 K). The improved average zT obtained through co-doping indicates the promise of fine carrier density control in maximizing the favorable effect of resonant levels for thermoelectric materials.

Description: In this contribution, we present an alternative detector technology for use in direct absorption spectroscopy setups. Instead of a semiconductor based detector, we use the photoacoustic effect to gauge the light intensity. To this end, the target gas species is hermetically sealed under excess pressure inside a miniature cell along with a MEMS microphone. Optical access to the cell is provided by a quartz window. The approach is particularly suitable for tunable diode laser spectroscopy in the mid-infrared range, where numerous molecules exhibit large absorption cross sections. Moreover, a frequency standard is integrated into the method since the number density and pressure inside the cell are constant. We demonstrate that the information extracted by our method is at least equivalent to that achieved using a semiconductor-based photon detector. As exemplary and highly relevant target gas, we have performed direct spectroscopy of methane at the R3-line of the 2 v 3 band at 6046.95 cm −1 using both detector technologies in parallel. The results may be transferred to other infrared-active transitions without loss of generality.

Description: Sixty-four neutral density filters constructed of metal plates with 88 apertures of varying diameter have been radiographed with a soft x-ray source and CCD camera at National Security Technologies, Livermore. An analysis of the radiographs fits the radial dependence of the apertures’ image intensities to sigmoid functions, which can describe the rapidly decreasing intensity towards the apertures’ edges. The fitted image intensities determine the relative attenuation value of each filter. Absolute attenuation values of several imaged filters, measured in situ during calibration experiments, normalize the relative quantities which are now used in analyses of neutron spectrometer data at the National Ignition Facility.

Description: We have studied the electronic structure of the L 1 0 ordered FePt thin film by hard x-ray photoemission spectroscopy (HAXPES), cluster model, and first-principles calculations to investigate the relationship between the electronic structure and perpendicular magneto-crystalline anisotropy (MCA). The Fe 2 p core-level HAXPES spectrum of the ordered film revealed the strong electron correlation in the Fe 3 d states and the hybridization between the Fe 3 d and Pt 5 d states. By comparing the experimental valence band structure with the theoretical density of states, the strong electron correlation in the Fe 3 d states modifies the valence band electronic structure of the L 1 0 ordered FePt thin film through the Fe 3 d -Pt 5 d hybridization. These results strongly suggest that the strong electron correlation effect in the Fe 3 d states and the Fe 3 d -Pt 5 d hybridization as well as the spin-orbit interaction in the Pt 5 d states play important roles in the perpendicular MCA for L 1 0 -FePt.

Description: A design to extend the unique divertor Thomson scattering system on DIII-D to allow measurements of electron temperature and density in high triangularity plasmas is presented. Access to this region is selectable on a shot-by-shot basis by redirecting the laser beam of the existing divertor Thomson system inboard — beneath the lower floor using a moveable, high-damage threshold, in-vacuum mirror — and then redirecting again vertically. The currently measured divertor region remains available with this mirror retracted. Scattered light is collected from viewchords near the divertor floor using in-vacuum, high temperature optical elements and relayed through the port window, before being coupled into optical fiber bundles. At higher elevations from the floor, measurements are made by dynamically re-focusing the existing divertor system collection optics. Nd:YAG laser timing, analysis of the scattered light spectrum via polychromators, data acquisition, and calibration are all handled by existing systems or methods of the current multi-pulse Thomson scattering system. Existing filtered polychromators with 7 spectral channels are employed to provide maximum measurement breadth ( T e in the range of 0.5 eV–2 keV, n e in the range of 5 × 10 18 –1 × 10 21 m 3 ) for both low T e in detachment and high T e measurement up beyond the separatrix.

Description: Here we investigate the hexagonal-to-cubic phase transition in metalorganic-chemical-vapor-deposition-grown gallium nitride enabled via silicon (100) nano-patterning. Electron backscatter diffraction and depth-resolved cathodoluminescence experiments show complete cubic phase GaN surface coverage when GaN deposition thickness ( h c ), etch depth ( t d ), and opening width ( p ) obey h c ≈ 1.06 p − 0.75 t d ; in line with a geometrical model based on crystallography. Cubic GaN uniformity is studied via electron backscatter diffraction and cathodoluminescence measurements. Atomic force microscopy reveals a smooth cubic GaN surface. Phase-transition cubic GaN shows promising optical and structural quality for integrated photonic devices.

Description: To study the thin lubrication film around long bubbles with length-to-radius aspect ratio more than 10 in square capillaries, a chromatic interference method was developed. Three-dimensional profile of the lubrication film was acquired from moving long bubbles with the length-to-radius aspect ratio up to 500. The dynamics and profiles of the film were found to be dependent of the dimensionless downstream distance x of the long bubble. For 1 ≪ x ≪ Ca −1 , the film has a thickness of order Ca 2/3 at the center and order Ca 1 at the sides, while for x  ∼  Ca −1 , the film at the sides thins to order Ca 4/3 , which matches well with the existing theoretical results.

Description: We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated with the quantum sheets exhibit an anomalous dependence on temperature indicative of carrier localization. Photoluminescence transients reveal a power law decay at low temperatures reflecting that the recombining electrons and holes occupy spatially separate, individual potential minima reminiscent of conventional (In,Ga)N(0001) quantum wells exhibiting the characteristic disorder of a random alloy. At elevated temperatures, carrier delocalization sets in and is accompanied by a thermally activated quenching of the emission. We ascribe the strong nonradiative recombination to extended states in the GaN barriers and confirm our assumption by a simple rate-equation model.

Description: Polarization-controlled tip-enhanced near-field Raman spectroscopic imaging is demonstrated using two characteristic dipoles induced at a metallic nano-tip. The polarization generated at the tip can be considered as a single dipole that can be switched from s to p by modulating the incident laser polarization. The s -dipole achieves highly selective molecular orientation imaging, while p -polarization provides comprehensive imaging in all directions. We discuss the controllability of near-field polarizations through the evaluation of the dipole orientation induced at the nano-tip. Polarization control and switching in near-field imaging are of tremendous advantage, as they allow the study of the molecular orientations in a sample, along with spectroscopic information.

Description: A hybrid structure of a graphene nanomesh with the gold nanodisks is studied to enhance the light absorption by the localized surface plasmon resonance. From the reflection spectra of the visible range for graphene nanomesh samples without and with nanodisks, it is found that the absorption of graphene nanomesh structures is greatly enhanced in the presence of gold nanodisks around the resonance wavelength. Simulation results based on the finite-difference time-domain method support the experimental observations. This study demonstrates the potential of constructing graphene based photodetectors with a high light absorption efficiency and wavelength selectivity.

Description: The spatial charge distribution in diketopyrrolopyrrole-containing ambipolar polymeric semiconductors embedded in dual-gate field-effect transistors (DGFETs) was investigated. The DGFETs have identical active channel layers but two different channel/gate interfaces, with a CYTOP™ organic dielectric layer for the top-gate and an octadecyltrichlorosilane (ODTS) self-assembled monolayer-treated inorganic SiO 2 dielectric for the bottom-gate, respectively. Temperature-dependent transfer measurements of the DGFETs were conducted to examine the charge transport at each interface. By fitting the temperature-dependent measurement results to the modified Vissenberg–Matters model, it can be inferred that the top-channel interfacing with the fluorinated organic dielectric layers has confined charge transport to two-dimensions, whereas the bottom-channel interfacing with the ODTS-treated SiO 2 dielectric layers has three-dimensional charge transport.

Description: We report on the characterization of silica aerogel thermal optical nonlinearity, obtained by z-scan technique. The results show that typical silica aerogels have nonlinear optical coefficient similar to that of glass (≃10 −12 m 2 /W), with negligible optical nonlinear absorption. The nonlinear coefficient can be increased to values in the range of 10 −10 m 2 /W by embedding an absorbing dye in the aerogel. This value is one order of magnitude higher than that observed in the pure dye and in typical highly nonlinear materials like liquid crystals.

Description: The structure and connectivity of cultured neuronal networks can be controlled by using micropatterned surfaces. Here, we demonstrate that the direction of signal propagation can be precisely controlled at a single-cell resolution by growing primary neurons on micropatterns. To achieve this, we first examined the process by which axons develop and how synapses form in micropatterned primary neurons using immunocytochemistry. By aligning asymmetric micropatterns with a marginal gap, it was possible to pattern primary neurons with a directed polarization axis at the single-cell level. We then examined how synapses develop on micropatterned hippocampal neurons. Three types of micropatterns with different numbers of short paths for dendrite growth were compared. A normal development in synapse density was observed when micropatterns with three or more short paths were used. Finally, we performed double patch clamp recordings on micropatterned neurons to confirm that these synapses are indeed functional, and that the neuronal signal is transmitted unidirectionally in the intended orientation. This work provides a practical guideline for patterning single neurons to design functional neuronal networks in vitro with the direction of signal propagation being controlled.

Description: Diffraction gratings are used from micron to nanometer wavelengths as dispersing elements in optical instruments. At shorter wavelengths, crystals can be used as diffracting elements, but due to the 3D nature of the interaction with light are wavelength selective rather than wavelength dispersing. There is an urgent need to extend grating technology into the x-ray domain of wavelengths from 1 to 0.1 nm, but this requires the use of gratings that have a faceted surface in which the facet angles are very small, typically less than 1°. Small facet angles are also required in the extreme ultra-violet and soft x-ray energy ranges in free electron laser applications, in order to reduce power density below a critical damage threshold. In this work, we demonstrate a technique based on anisotropic etching of silicon designed to produce very small angle facets with a high degree of perfection.

Description: In silicon thin-film solar cells the interface between the i- and p-layer is the most critical. In the case of back diffusion of photogenerated minority carriers to the i/p-interface, recombination occurs mainly on the defect states at the interface. To suppress this effect and to reduce recombination losses, hydrogen plasma treatment (HPT) is usually applied. As an alternative to using state of the art HPT we apply an argon plasma treatment (APT) before the p-layer deposition in n-i-p solar cells. To study the effect of APT, several investigations were applied to compare the results with HPT and no plasma treatment at the interface. Carrier collection losses in resulting solar cells were examined with spectral response measurements with and without bias voltage. To investigate single layers, surface photovoltage and X-ray photoelectron spectroscopy (XPS) measurements were conducted. The results with APT at the i/p-interface show a beneficial contribution to the carrier collection compared with HPT and no plasma treatment. Therefore, it can be concluded that APT reduces the recombination centers at the interface. Further, we demonstrate that carrier collection losses of thin-film solar cells are significantly lower with APT.

Description: A nonlinear wideband generator architecture by clamping the cantilever beam generator with a curve fixture is proposed. Devices with different nonlinear stiffness can be obtained by properly choosing the fixture curve according to the design requirements. Three available generator types are presented and discussed for polynomial curves. Experimental investigations show that the proposed mechanism effectively extends the operation bandwidth with good power performance. Especially, the simplicity and easy feasibility allow the mechanism to be widely applied for vibration generators in different scales and environments.

Description: In the initial alignment process of strapdown inertial navigation system (SINS), large misalignment angles always bring nonlinear problem, which can usually be processed using the scaled unscented Kalman filter (SUKF). In this paper, the problem of large misalignment angles in SINS alignment is further investigated, and the strong tracking scaled unscented Kalman filter (STSUKF) is proposed with fixed parameters to improve convergence speed, while these parameters are artificially constructed and uncertain in real application. To further improve the alignment stability and reduce the parameters selection, this paper proposes a fuzzy adaptive strategy combined with STSUKF (FUZZY-STSUKF). As a result, initial alignment scheme of large misalignment angles based on FUZZY-STSUKF is designed and verified by simulations and turntable experiment. The results show that the scheme improves the accuracy and convergence speed of SINS initial alignment compared with those based on SUKF and STSUKF.

Description: An optical Thomson scattering diagnostic has been designed for the National Ignition Facility to characterize under-dense plasmas. We report on the design of the system and the expected performance for different target configurations. The diagnostic is designed to spatially and temporally resolve the Thomson scattered light from laser driven targets. The diagnostic will collect scattered light from a 50 × 50 × 200 μ m volume. The optical design allows operation with different probe laser wavelengths. A deep-UV probe beam ( λ 0 = 210 nm) will be used to Thomson scatter from electron plasma densities of ∼5 × 10 20 cm −3 while a 3 ω probe will be used for plasma densities of ∼1 × 10 19 cm −3 . The diagnostic package contains two spectrometers: the first to resolve Thomson scattering from ion acoustic wave fluctuations and the second to resolve scattering from electron plasma wave fluctuations. Expected signal levels relative to background will be presented for typical target configurations (hohlraums and a planar foil).