Publication Date:
2016-07-21
Description:
A large laser modulated resistance effect was observed in a Cu 2 O heterojunction of Cu 2 O/Si. Compared to the no laser illumination condition, the lateral resistance of the Cu 2 O film was greatly altered. More interestingly, through the spatial movement of a laser spot between two electrodes, a tunable resistance with good linearity was achieved. We attribute this surface resistance effect to the difference in carrier mobility and carrier density between the Cu 2 O and Si sides. The strong linear resistance change ratio of Cu 2 O/Si indicates that this simple PN heteroepitaxial junction structure is a potential candidate for laser-controlled resistors, sensors, and even storage devices.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics