Publication Date:
2016-07-14
Description:
Hot-carrier degradation and room-temperature annealing effects are investigated in unpassivated ammonia-rich AlGaN/GaN high electron mobility transistors. Devices exhibit a fast recovery when annealed after hot carrier stress with all pins grounded. The recovered peak transconductance can exceed the original value, an effect that is not observed in control passivated samples. Density functional theory calculations suggest that dehydrogenation of pre-existing O N -H defects in AlGaN plays a significant role in the observed hot carrier degradation, and the resulting bare O N can naturally account for the “super-recovery” in the peak transconductance.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics