ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
Language
Number of Hits per Page
Default Sort Criterion
Default Sort Ordering
Size of Search History
Default Email Address
Default Export Format
Default Export Encoding
Facet list arrangement
Maximum number of values per filter
Auto Completion
Topics (search only within journals and journal articles that belong to one or more of the selected topics)
Show more topics
Feed Format
Maximum Number of Items per Feed
Permalink If you want to be able to use settings permanently, you must save your settings and then set a Bookmark to the permalink
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    X-ray imaging of polycrystalline materialsa) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3560-3562 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel method yielding simultaneous information about location and orientation of the crystallites in a polycrystalline specimen has been developed and succesfully applied to the investigation of thin diamond films deposited on silicon. The experiment uses the parallel beam from a synchrotron radiation source and a microchannel plate as collimator in front of an image plate detector. Exposure times of only a few minutes could be realized. The spatial resolution was 0.375 mm but can easily be improved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145469
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    A sublimation probe for the injection of high-Z impurities into fusion devices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 63-67 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: For the investigation of high-Z impurities in the ASDEX Upgrade tokamak a sublimation probe was developed and tested. With this probe it is possible to inject materials, that sublimate at temperatures from about 50 to 150 °C into the plasma through a controllable valve. For the investigation of the tungsten transport in ASDEX Upgrade the probe was operated with tungsten carbonyl. The flux of tungsten, which is difficult to determine directly because of the uncertain atomic data, can be determined using the fluxes of oxygen and carbon, the atomic data of which are better known. In this article the setup of the probe and first experiments are described. Here the layer of deposited tungsten was investigated and the number of emitted photons per ionization (the S/XB ratio) for the 400.8 nm line of W I was estimated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149575
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Texture analysis of chemical vapor deposited diamond films on silicon by the component method (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4765-4770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oriented diamond films have been grown on Si(001) and Si(111) substrates by microwave plasma chemical vapor deposition. X-ray diffractometry has been employed for pole figure measurements which have been evaluated by the component method. This technique can be applied to multiphase materials with overlapping pole figures. It decomposes the texture into components by identifying preferred directions in the pole density distribution. Thereby the textures of both diamond on Si(001) and on Si(111) have been reproduced quantitatively elucidating the heteroepitaxial orientational relationship and the occurrence of twinning. The volume fractions of both epitaxially oriented diamond crystallites and their twins of first order have been determined. It is shown that under the employed nucleation and growth conditions twinning is more pronounced for diamond on Si(111) than on Si(001). Furthermore, the fraction of randomly oriented crystallites in both textures has been determined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359412
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Study of the initial growth phase of chemical vapor deposited diamond on silicon(001) by synchrotron radiation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1907-1910 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very thin diamond films (thickness ∼0.1 μm) have been investigated by x-ray diffraction pole figure measurements using synchrotron radiation in order to understand the mechanism of heteroepitaxial diamond nucleation and the first steps of film growth on silicon(001) substrates. The diamond layers consist of an epitaxially aligned component with a crystallographic orientation identical to the substrate. The initial orientational spread of the grains around the perfect epitaxial orientation prior to any modification by a subsequent textured growth step has been determined. In the studied temperature range for the nucleation step the misalignment decreases slightly with increasing temperature. Besides the epitaxial crystallites their corresponding twins of first and second order have been found. The intensity distribution of the pole figures indicates that the process of twinning plays a dominating role in the initial growth stage which shows a tendency to become even more pronounced for higher substrate temperatures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361080
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Thione Compounds of Copper and Silver: Tetrakis[1-methyl-2(1H)-pyridinethione-S]copper(I) Tetrafluoroborate and Tetrakis-[1-methyl-2(1H)-pyridinethione-S]silver(I) Tetrafluoroborate (1996)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 52 (1996), S. 1914-1917 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270196003666
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    A new Y-tube olfactometer for mosquitoes to measure the attractiveness of host odours (1999)
    Springer
    Entomologia experimentalis et applicata 92 (1999), S. 9-19 
    Details
    ISSN: 1570-7458
    Keywords: mosquito ; Aedes aegypti ; host seeking behaviour ; lactic acid ; carbon dioxide ; host odour ; attractant ; olfactometer
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract In a new bioassay a small Y-shaped wind tunnel is used to quantitatively investigate the responses of mosquitoes to host odours. Female yellow fever mosquitoes, Aedes aegypti (L.) (Diptera: Culicidae) were tested to (1) a human hand, (2) an extract with human skin residues, (3) L-(+)-lactic acid, and (4) carbon dioxide. The responses to the skin extract followed a sigmoid dose response curve. The most effective dose attracted 80–90% of the mosquitoes within 30 s and was as effective as the human hand. L-(+)-lactic acid was identified in this extract and found attractive for mosquitoes also when presented alone. Carbon dioxide stimulated taking flight and was attractive, an effect which was synergistically enhanced in combination with L-(+)-lactic acid. The presented bioassay is especially suited to test the behavioural effects of synthetic odours as well as of natural odour sources. Due to the fast response of the mosquitoes, the sensitivity, and the simplicity of the testing procedure it is a potent tool in the search for new attractive components.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1003797623701
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Study of the growth of fullerene-carbonized epitaxial SiC thin films by synchrotron radiation (1997)
    Springer
    Applied physics 64 (1997), S. 139-141 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.55; 61.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Thin SiC films have been deposited on silicon(0 0 1) substrates by fullerene-carbonization. Using synchrotron radiation X-ray diffraction pole figure measurements have been employed in order to study the texture of the layers. It is qualitatively shown that the films contain epitaxially aligned β-SiC crystallites with the same orientation as the underlying substrate and their twins of first and second order. The orientational spread of the epitaxial crystallites in terms of tilt against and rotation around the substrate normal is smaller than 3°. The formation of twins as a growth defect plays a major role which is even more pronounced at a higher substrate temperature. Furthermore, an additional preferred orientation has been identified which can only be explained by a non-cubic SiC phase. The portion of these crystallites in the film can be considerably reduced by an increase of the deposition temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050454
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Study of the Growth of Thin Expitaxial CVD Diamond Films on Silicon (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 228-231 (July 1996), p. 445-450 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/02/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.228-231.445.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    X-ray pole-figure study of the epitaxial growth of C60 thin films on mica (001) (1995)
    Springer
    Applied physics 60 (1995), S. 383-389 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.10 ; 81.40.Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The growth of epitaxial C60 thin films on mica(001) by thermal evaporation has been studied in detail by X-ray pole-figure measurements. The influence of the deposition rate, the substrate temperature and the film thickness on the in-plane epitaxial arrangements and the formation of twins has been investigated. It has been demonstrated that the C60 growth is determined by two independent and equivalent C60-crystal grain alignments (type-A and type-B). The nearly six-fold symmetry of the mica(001)-substrate surface offers the three-fold fcc-(111)-oriented C60-crystal grains two equivalent crystal alignments. A high deposition rate of 0.5 Å/s is responsible for the formation of twins at a substrate temperature of 150°C, which diminishes by a higher substrate temperature of 200°C. By a decrease of the deposition rate down to 0.08 Å/s the twins vanish at a film thickness of 200 nm and at the substrate temperature of 150°C. Under the same sublimation conditions, in addition to the type-A and type-B crystal orientations, the growth of the thin C60 films starts with a slight fibre texture which does not appear at a larger film thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538338
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    X-ray pole-figure study of the epitaxial growth of C60 thin films on mica (001) (1995)
    Springer
    Applied physics 60 (1995), S. 383-389 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.55; 61.10; 81.40.Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The growth of epitaxial C60 thin films on mica(0 0 1) by thermal evaporation has been studied in detail by X-ray pole-figure measurements. The influence of the deposition rate, the substrate temperature and the film thickness on the in-plane epitaxial arrangements and the formation of twins has been investigated. It has been demonstrated that the C60 growth is determined by two independent and equivalent C60-crystal grain alignments (type-A and type-B). The nearly six-fold symmetry of the mica(0 0 1)-substrate surface offers the three-fold fcc-(1 1 1)-oriented C60-crystal grains two equivalent crystal alignments. A high deposition rate of 0.5 AÅ/s is responsible for the formation of twins at a substrate temperature of 150° C, which diminishes by a higher substrate temperature of 200° C. By a decrease of the deposition rate down to 0.08 AÅ/s the twins vanish at a film thickness of 200 nm and at the substrate temperature of 150° C. Under the same sublimation conditions, in addition to the type-A and type-B crystal orientations, the growth of the thin C60 films starts with a slight fibre texture which does not appear at a larger film thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538338
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...