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  • 1
    ISSN: 1432-0630
    Keywords: PACS: 68.55; 61.10; 81.40.Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The growth of epitaxial C60 thin films on mica(0 0 1) by thermal evaporation has been studied in detail by X-ray pole-figure measurements. The influence of the deposition rate, the substrate temperature and the film thickness on the in-plane epitaxial arrangements and the formation of twins has been investigated. It has been demonstrated that the C60 growth is determined by two independent and equivalent C60-crystal grain alignments (type-A and type-B). The nearly six-fold symmetry of the mica(0 0 1)-substrate surface offers the three-fold fcc-(1 1 1)-oriented C60-crystal grains two equivalent crystal alignments. A high deposition rate of 0.5 AÅ/s is responsible for the formation of twins at a substrate temperature of 150° C, which diminishes by a higher substrate temperature of 200° C. By a decrease of the deposition rate down to 0.08 AÅ/s the twins vanish at a film thickness of 200 nm and at the substrate temperature of 150° C. Under the same sublimation conditions, in addition to the type-A and type-B crystal orientations, the growth of the thin C60 films starts with a slight fibre texture which does not appear at a larger film thickness.
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  • 2
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2070-2073 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By deposition of C60 on silicon at temperatures smaller than 1000 °C the formation of thin epitaxial β-SiC films on Si was successful. This low-temperature regime can be important for the application of SiC in microelectronic devices. C60 was deposited on Si(001) and Si(111) in ultrahigh vacuum at constant deposition rates for some hours. The temperature of the Si substrates ranged between 800 and 900 °C. The thickness and the composition of the formed layers are determined by Rutherford backscattering (RBS). The thickness of the layers varied between about 50 nm and 1 μm depending on the deposition parameters. From the shape of the RBS spectra and the x-ray-diffraction (XRD) scans, only β-SiC can be identified. The aitch-theta–2aitch-theta XRD spectra show preferred orientation of β-SiC on Si(001) and Si(111), respectively. Additional XRD pole figure measurements demonstrate the heteroepitaxial growth of β-SiC on Si. The orientational relationships β-SiC(001)[110](parallel)Si(001)[110] and SiC(111)[1¯10](parallel)Si(111)[1¯10] can be extracted. The formation of growth defects (twins) can be observed. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3337-3340 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin C60 films have been deposited on mica(001) substrates by thermal evaporation at substrate temperatures between room temperature and 200 °C and at a constant deposition rate. The influence of the substrate temperature on the growth of C60-thin films has been systematically investigated by x-ray diffraction. θ–2θ measurements of the (111) peaks show a decrease of the full width at half-maximum (FWHM) with increasing substrate temperature, leading to a minimum FWHM of 0.15° for a substrate temperature of 200 °C. Oriented films with an out-of-plane mosaic spread of Δω=0.2° could be grown at a substrate temperature of 150±25 °C. It can be shown that the in-plane epitaxial arrangement C60(111)(parallel)mica(001) is determined by the seeding conditions and is independent of the substrate temperature. An increasing substrate temperature enhances the epitaxial alignment of the C60 crystals oriented with a {111} face parallel to surface and also the azimuthal alignment of the twins which are rotated by 60° about the surface normal.
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 80-81 (1993), S. 807-812 
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Protein Structure and Molecular 1077 (1991), S. 159-166 
    ISSN: 0167-4838
    Keywords: Deoxyhypusyl hydroxylase ; Eukaryotic translation initiation factor 4D ; Metal binding peptide ; Peptide inhibitor design
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Tetrahedron 44 (1988), S. 7145-7153 
    ISSN: 0040-4020
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1573-904X
    Keywords: polyoma virus ; VP1 capsoids ; NIH 3T3 cells ; DNA uptake ; EGFP ; plasmid transfection
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Purpose. We developed a prokaryotic expression system to express the major capsid protein of Polyomavirus, VP1. Furthermore, we investigated the transport of single stranded (ss) and double stranded (ds) DNA, mediated through VP1 as drug delivery system into mouse fibroblasts. Methods. To study DNA delivery we used two kinds of DNA, a ssDNA fragment (19mer) and dsDNA (plasmid pEGFPN1, 4.7 kb or a FITC-labelled dsDNA fragment, 1.8 kb). Results. The uptake of VP1 capsoids loaded with FITC-labelled oligodeoxynucleotides (FODNs) was observed. VP1 pentamers loaded with condensates of dendrimer/dsDNA fragments (FITC-labelled) resulted in significantly higher fluorescence signal in the cytoplasm of NIH 3T3 cells in comparison to control experiments without VP1. Additionally, VP1 capsoids loaded with plasmid pEGFPN1 without dendrimers resulted in an approximately 10 fold higher transfection rate in comparison to blank DNA controls. Conclusions. Our results demonstrated the potential of VP1 capsoids as DNA delivery system. EGFP expression was significantly enhanced when plasmid DNA was delivered via VP1 capsoids, compared to control experiments with naked DNA.
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  • 9
    ISSN: 1432-0630
    Keywords: PACS: 68.55; 61.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Thin SiC films have been deposited on silicon(0 0 1) substrates by fullerene-carbonization. Using synchrotron radiation X-ray diffraction pole figure measurements have been employed in order to study the texture of the layers. It is qualitatively shown that the films contain epitaxially aligned β-SiC crystallites with the same orientation as the underlying substrate and their twins of first and second order. The orientational spread of the epitaxial crystallites in terms of tilt against and rotation around the substrate normal is smaller than 3°. The formation of twins as a growth defect plays a major role which is even more pronounced at a higher substrate temperature. Furthermore, an additional preferred orientation has been identified which can only be explained by a non-cubic SiC phase. The portion of these crystallites in the film can be considerably reduced by an increase of the deposition temperature.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.10 ; 81.40.Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The growth of epitaxial C60 thin films on mica(001) by thermal evaporation has been studied in detail by X-ray pole-figure measurements. The influence of the deposition rate, the substrate temperature and the film thickness on the in-plane epitaxial arrangements and the formation of twins has been investigated. It has been demonstrated that the C60 growth is determined by two independent and equivalent C60-crystal grain alignments (type-A and type-B). The nearly six-fold symmetry of the mica(001)-substrate surface offers the three-fold fcc-(111)-oriented C60-crystal grains two equivalent crystal alignments. A high deposition rate of 0.5 Å/s is responsible for the formation of twins at a substrate temperature of 150°C, which diminishes by a higher substrate temperature of 200°C. By a decrease of the deposition rate down to 0.08 Å/s the twins vanish at a film thickness of 200 nm and at the substrate temperature of 150°C. Under the same sublimation conditions, in addition to the type-A and type-B crystal orientations, the growth of the thin C60 films starts with a slight fibre texture which does not appear at a larger film thickness.
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