Abstract
The growth of epitaxial C60 thin films on mica(001) by thermal evaporation has been studied in detail by X-ray pole-figure measurements. The influence of the deposition rate, the substrate temperature and the film thickness on the in-plane epitaxial arrangements and the formation of twins has been investigated. It has been demonstrated that the C60 growth is determined by two independent and equivalent C60-crystal grain alignments (type-A and type-B). The nearly six-fold symmetry of the mica(001)-substrate surface offers the three-fold fcc-(111)-oriented C60-crystal grains two equivalent crystal alignments. A high deposition rate of 0.5 Å/s is responsible for the formation of twins at a substrate temperature of 150°C, which diminishes by a higher substrate temperature of 200°C. By a decrease of the deposition rate down to 0.08 Å/s the twins vanish at a film thickness of 200 nm and at the substrate temperature of 150°C. Under the same sublimation conditions, in addition to the type-A and type-B crystal orientations, the growth of the thin C60 films starts with a slight fibre texture which does not appear at a larger film thickness.
Similar content being viewed by others
References
M.S. Dresselhaus, G. Dresselhaus, P.C. Eklund: J. Mater. Res.8, 2054 (1993)
D. Schmicker, S. Schmidt, J.G. Skofronick, J.P. Toennies, R. Vollmer: Phys. Rev. B44, 10995 (1991)
M. Sakurai, H. Tada, K. Saiki, A. Koma: Jpn. J. Appl. Phys.30, L1892 (1991)
G. Gensterblum, L.M. Yu, J.J. Pireaux, P.A. Thiry, R. Caudano, J.M. Themlin, S. Bouzidi, F. Coletti, J.M. Debever: Appl. Phys. A56, 175 (1993)
H. Xu, D.M. Chen, W.N. Creager: Phys. Rev. Lett.70, 1850 (1993)
S. Fölsch, T. Maruno, A. Yamashita, T. Hayashi: Appl. Phys. Lett.62, 2643 (1993)
Y.Z. Li, J.C. Patrin, M. Chander, J.H. Weaver, L.P.F. Chibante, R.E. Smalley: Science253, 429 (1991)
J.A. Dura, P.M. Pippenger, N.J. Halas, X.Z. Xiong, P.C. Chow, S.C. Moss: Appl. Phys. Lett.63, 3443 (1993)
H.G. Busmann, R. Hiss, H. Gaber, I.V. Hertel: Surf. Sci.289, 381 (1993)
S. Henke, K.H. Thürer, S. Geier, B. Rauschenbach, B. Stritzker: MRS-Symposium, Boston, Nov. 1994, MRS Proc. 359 (MRS, Pittsburg, PA 1995) (in press)
W. Krakow, N.M. Rivera, R.A. Roy, R.S. Ruoff, J.J. Cuomo: Appl. Phys. A56, 185 (1993)
J.E. Fischer, E. Werwa, P.A. Heiney: Appl. Phys. A56, 193 (1993)
A. Fartash: Appl. Phys. Lett.64, 1877 (1994)
S. Henke, K.H. Thürer, J.K.N. Lindner, B. Rauschenbach, B. Stritzker: J. Appl. Phys.76, 3337 (1994)
J.K.N. Lindner, S. Henke, B. Rauschenbach, B. Stritzker: Thin Solid Films (submitted)
D.W. Pashley: Philos. Mag.4, 316 (1959)
M. Volmer:Kinetik der Phasenbildung (Steinkopff, Dresden 1939)
V.N.E. Robinson, J.L. Robins: Thin Solid Films5, 313 (1970)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Henke, S., Thürer, K.H., Geier, S. et al. X-ray pole-figure study of the epitaxial growth of C60 thin films on mica (001). Appl. Phys. A 60, 383–389 (1995). https://doi.org/10.1007/BF01538338
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF01538338