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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 63 (1959), S. 314-315 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1279-1286 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of differential ion damage in AlAs-GaAs epitaxial heterostructures is explored using conventional and high-resolution transmission electron microscopy, together with Rutherford backscattering spectrometry. By use of Si+ ion implantation, the rapid buildup of lattice damage in GaAs, and the relative resistance of AlAs to structure breakdown is highlighted. The ion dose levels required for bulk amorphization of the two materials differ by at least two orders of magnitude. The way in which lattice disorder changes near the AlAs/GaAs interface is studied in detail and it is demonstrated that the AlAs layer, which remains crystalline up to high ion doses, promotes in situ annealing of narrow zones of GaAs crystal adjacent to both of its interfaces. These crystalline GaAs zones show substantially enhanced resistance to ion damage accumulation but they contain planar defects and are finally rendered amorphous after extended ion bombardment. During this process, defects propagate into the edges of the AlAs layer which are then progressively amorphized in an apparently heterogeneous (boundary-dependent) manner. In addition, it is shown that GaAs in other regions of the sample is amorphized by a mechanism which at first leaves nanometer-scale blocks of crystal isolated within the newly formed amorphous material, although these blocks are then rapidly broken down by further bombardment. The way in which the implantation-damaged layers restructure during annealing treatment is also described. Up to ∼320 nm of amorphous GaAs beneath the AlAs layer can be regrown as a single crystal by the motion of two opposing growth interfaces during annealing at 800 °C.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3180-3185 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article describes the modeling of transmission line transformers using methods which are analogous to the methods used to analyze both the ac frequency and transient response of conventional transformers. Transformers in which the lines used to construct them are wound inductively, in order to suppress parasitic short circuit paths within the transformers, are analyzed. It is shown that by using this technique the resulting inductive isolation of the secondary circuit from the primary substantially reduces pulse droop and pulse distortion. Despite the apparent complexity of these transformers, a method by which circuit models of these transformers can be deduced is given. From these models very simple equivalent circuits can be derived which can then be used to calculate accurately the performance characteristics of the transformers and, in particular, predict the pulse distortion characteristics of these devices. Different winding configurations are also considered and it is shown that, by the use of mutually coupled winding of the transmission lines in the transformer, it is possible to minimize pulse droop. Finally it is shown that the modeling technique can be used, in modified form, to analyze the ac frequency response of this type of transformer. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2630-2635 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design, construction, and operational characteristics of a 200 kV transmission line pulse transformer is described. The transformer is wound using a new winding method that enhances the isolation of the output of the transformer from the input. As a result, pulse droop is substantially reduced, minimizing pulse distortion in the transformer. The ways in which both pulse rise time and droop can be further improved are investigated using a simple model for the transformer. The frequency response performance of the transformer is also described and modeled. As a result, it is shown that this type of transformer has the potential to be used as a high-frequency, continuously excited power transformer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1156-1158 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we present the results of an experimental study of low-temperature-grown GaAs, which clearly resolves separately both carrier trapping and recombination processes. We extend our previous model to account for the observed carrier dynamics, and show how the material growth and annealing conditions can be adjusted to optimize the material properties for all-optical device applications. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1135-1137 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first demonstration of a nonlinear coupler switch capable of substantially complete all-optical switching at subpicosecond rates with no light-induced thermal effects.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2471-2473 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-voltage waveforms with rise times of 50 ns were produced by electromagnetic shock-wave generation in a uniform, lumped element delay line constructed with nonlinear, ferroelectric capacitors. A close correlation was found between the experimental voltage waveforms observed at different positions along the delay line and those predicted by a numerical computer code.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1305-1307 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of the two-photon absorption coefficient of GaAs optical waveguide structures at 1.06 μm. We show that for pulse lengths longer than ∼1 ps, light-induced index changes sufficient to induce all-optical switching will be predominantly due to carriers generated by two-photon absorption. These results allow us to predict limitations for ultrafast all-optical GaAs devices.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2081-2083 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial heteroepitaxial growth and structure of thin CdS layers on GaAs has been studied by conventional and high-resolution transmission electron microscopy. The work highlights the dependence of CdS crystal type on GaAs substrate orientation. Wurtzite-structure CdS is formed on (111)A GaAs and it is found to relieve misfit stresses by the introduction of interfacial defects, often associated with steps at the interface. Sphalerite-structure CdS is produced by initial growth on (001)GaAs and, in this case, misfit stresses are more slowly relieved, first with the formation of an asymmetrical array of interfacial dislocations and inclined stacking faults.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 228-230 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the processing of high temperature superconductor thin films into devices, the use of calibrated milling rates has proved unreliable as a means of determining the milled depth. This problem has been solved using in situ secondary ion mass spectrometry for identifying interfaces in multilayers based on YBa2Cu3O7. The depth resolution obtained during routine patterning of typical multilayers was ∼4 nm. Accurate termination of milling at an insulator/superconductor interface has been demonstrated. The presence of water vapor during milling has been shown to affect the proportions of the different secondary ion species, but has only a slight affect on the milling rate.
    Type of Medium: Electronic Resource
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